FR2830127B1 - Commutateur monolithique bidirectionnel vertical a commande en tension - Google Patents

Commutateur monolithique bidirectionnel vertical a commande en tension

Info

Publication number
FR2830127B1
FR2830127B1 FR0112197A FR0112197A FR2830127B1 FR 2830127 B1 FR2830127 B1 FR 2830127B1 FR 0112197 A FR0112197 A FR 0112197A FR 0112197 A FR0112197 A FR 0112197A FR 2830127 B1 FR2830127 B1 FR 2830127B1
Authority
FR
France
Prior art keywords
voltage control
vertical bidirectional
monolithic switch
bidirectional monolithic
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0112197A
Other languages
English (en)
Other versions
FR2830127A1 (fr
Inventor
Mathieu Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0112197A priority Critical patent/FR2830127B1/fr
Priority to US10/246,918 priority patent/US6580100B2/en
Publication of FR2830127A1 publication Critical patent/FR2830127A1/fr
Application granted granted Critical
Publication of FR2830127B1 publication Critical patent/FR2830127B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
FR0112197A 2001-09-21 2001-09-21 Commutateur monolithique bidirectionnel vertical a commande en tension Expired - Fee Related FR2830127B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0112197A FR2830127B1 (fr) 2001-09-21 2001-09-21 Commutateur monolithique bidirectionnel vertical a commande en tension
US10/246,918 US6580100B2 (en) 2001-09-21 2002-09-19 Voltage-controlled vertical bidirectional monolithic switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0112197A FR2830127B1 (fr) 2001-09-21 2001-09-21 Commutateur monolithique bidirectionnel vertical a commande en tension

Publications (2)

Publication Number Publication Date
FR2830127A1 FR2830127A1 (fr) 2003-03-28
FR2830127B1 true FR2830127B1 (fr) 2004-12-24

Family

ID=8867499

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0112197A Expired - Fee Related FR2830127B1 (fr) 2001-09-21 2001-09-21 Commutateur monolithique bidirectionnel vertical a commande en tension

Country Status (2)

Country Link
US (1) US6580100B2 (fr)
FR (1) FR2830127B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838321B2 (en) * 2002-09-26 2005-01-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
US20040063302A1 (en) * 2002-09-26 2004-04-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
US7518194B2 (en) * 2006-05-20 2009-04-14 Sergey Antonov Current amplifying integrated circuit
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
WO2014210072A1 (fr) 2013-06-24 2014-12-31 Ideal Power Inc. Systèmes, circuits, dispositifs et procédés avec transistors bipolaires bidirectionnels
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US20160204714A1 (en) 2014-11-06 2016-07-14 Ideal Power Inc. Variable-Voltage Self-Synchronizing Rectifier Circuits, Methods, and Systems
FR3036001A1 (fr) * 2015-05-05 2016-11-11 St Microelectronics Tours Sas Commutateur bidirectionnel de puissance

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982268A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode lead throughs
US4816892A (en) * 1982-02-03 1989-03-28 General Electric Company Semiconductor device having turn-on and turn-off capabilities
CA1200322A (fr) * 1982-12-13 1986-02-04 General Electric Company Redresseur bidirectionnel a portes isolees, et son fonctionnement
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
EP0394859A1 (fr) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Dispositif semi-conducteur bidirectionnel, à extinction
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
FR2751790B1 (fr) * 1996-07-26 1998-11-27 Sgs Thomson Microelectronics Assemblage monolithique d'un transistor igbt et d'une diode rapide
FR2787637B1 (fr) * 1998-12-18 2001-03-09 Centre Nat Rech Scient Structure peripherique pour dispositif monolithique de puissance

Also Published As

Publication number Publication date
US20030057480A1 (en) 2003-03-27
FR2830127A1 (fr) 2003-03-28
US6580100B2 (en) 2003-06-17

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090529