JP2018502542A5 - - Google Patents

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JP2018502542A5
JP2018502542A5 JP2017524461A JP2017524461A JP2018502542A5 JP 2018502542 A5 JP2018502542 A5 JP 2018502542A5 JP 2017524461 A JP2017524461 A JP 2017524461A JP 2017524461 A JP2017524461 A JP 2017524461A JP 2018502542 A5 JP2018502542 A5 JP 2018502542A5
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JP2018502542A (ja
JP6659685B2 (ja
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Priority claimed from PCT/US2015/059623 external-priority patent/WO2016073957A1/en
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JP2017524461A 2014-11-06 2015-11-06 ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。 Active JP6659685B2 (ja)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US201462076320P 2014-11-06 2014-11-06
US62/076,320 2014-11-06
US201562100301P 2015-01-06 2015-01-06
US62/100,301 2015-01-06
US201562130470P 2015-03-09 2015-03-09
US62/130,470 2015-03-09
US201562162907P 2015-05-18 2015-05-18
US62/162,907 2015-05-18
US201562182878P 2015-06-22 2015-06-22
US62/182,878 2015-06-22
US201562185543P 2015-06-26 2015-06-26
US62/185,543 2015-06-26
US201562194167P 2015-07-17 2015-07-17
US62/194,167 2015-07-17
PCT/US2015/059623 WO2016073957A1 (en) 2014-11-06 2015-11-06 Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors

Publications (3)

Publication Number Publication Date
JP2018502542A JP2018502542A (ja) 2018-01-25
JP2018502542A5 true JP2018502542A5 (enExample) 2018-11-22
JP6659685B2 JP6659685B2 (ja) 2020-03-04

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JP2017524461A Active JP6659685B2 (ja) 2014-11-06 2015-11-06 ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。

Country Status (7)

Country Link
US (4) US9660551B2 (enExample)
EP (1) EP3186888B1 (enExample)
JP (1) JP6659685B2 (enExample)
KR (1) KR102450784B1 (enExample)
CN (1) CN107371382B (enExample)
GB (1) GB2536586B (enExample)
WO (1) WO2016073957A1 (enExample)

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US11881525B2 (en) 2021-08-10 2024-01-23 Ideal Power Inc. Semiconductor device with bi-directional double-base trench power switches
US12616074B2 (en) 2022-05-25 2026-04-28 Ideal Power Inc. Double-sided cooling package for double-sided, bi-directional junction transistor
US12507486B2 (en) 2022-09-15 2025-12-23 Globalfoundries U.S. Inc. Vertically integrated SCR structure with SOI-based raised trigger element
JP2025542570A (ja) * 2022-12-08 2025-12-26 アイディール パワー インコーポレイテッド 接合された幅広で厚いウエハからの双方向バイポーラ接合トランジスタデバイス
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US12506475B2 (en) 2023-08-30 2025-12-23 Ideal Power Inc. Hybrid switch circuit with bidirectional double-base bipolar junction transistors
US12388442B2 (en) 2023-12-06 2025-08-12 Ideal Power Inc. Unidirectional hybrid switch circuit
US12506476B2 (en) 2024-02-21 2025-12-23 Ideal Power Inc. Methods and systems of operating a double-sided double-base bipolar junction transistor

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