JP2018195827A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP2018195827A JP2018195827A JP2018095807A JP2018095807A JP2018195827A JP 2018195827 A JP2018195827 A JP 2018195827A JP 2018095807 A JP2018095807 A JP 2018095807A JP 2018095807 A JP2018095807 A JP 2018095807A JP 2018195827 A JP2018195827 A JP 2018195827A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- semiconductor substrate
- passivation film
- oxide
- curvature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 206
- 238000002161 passivation Methods 0.000 claims abstract description 202
- 239000004065 semiconductor Substances 0.000 claims abstract description 196
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000012958 reprocessing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 173
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- 239000002019 doping agent Substances 0.000 description 26
- 230000007547 defect Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 239000008393 encapsulating agent Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- JUGMVQZJYQVQJS-UHFFFAOYSA-N [B+3].[O-2].[Zn+2] Chemical compound [B+3].[O-2].[Zn+2] JUGMVQZJYQVQJS-UHFFFAOYSA-N 0.000 description 2
- CJNDGEMSSGQZAN-UHFFFAOYSA-N [O--].[O--].[In+3].[Cs+] Chemical compound [O--].[O--].[In+3].[Cs+] CJNDGEMSSGQZAN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、韓国特許出願第10−2017−0062478号(出願日:2017年5月19日)及び韓国特許出願第10−2017−0171553号(出願日:2017年12月13日)に基づくパリ条約4条の優先権主張を伴ったものであり、当該韓国特許出願に開示された内容に基づくものである。参考のために、当該韓国特許出願の明細書及び図面の内容は本願明細書の一部に包摂されるものである。
〔1〕 太陽電池であって、
前面及び後面のうちの少なくとも1つに凹凸部を備えた半導体基板と、
前記凹凸部上に配置されるパッシベーション膜とを備えてなり、
前記パッシベーション膜と前記半導体基板の一面の間に形成される酸化物を備えてなり〔前面及び後面のうちの少なくとも1つに凹凸部を備えた半導体基板と、
前記凹凸部上に配置されるパッシベーション膜と、
前記パッシベーション膜と前記半導体基板の一面の間に形成された酸化物とを備えてなり〕、
前記酸化物は非晶質である、太陽電池。
〔2〕 前記半導体基板における前記凹凸部は凸部と凹部を備えてなり、及び、
前記パッシベーション膜は、
前記凸部上では第1厚さを有し、
前記凹部相では前記第1厚さと異なる第2厚さを有する、〔1〕に記載の太陽電池。
〔3〕 前記凸部及び前記凹部の各々は曲率を有してなり、
前記凸部の前記曲率は第1曲率半径を有してなり、及び
前記凹部の前記曲率は第2曲率半径を有してなる、〔2〕に記載の太陽電池。
〔4〕 前記第1曲率半径は前記第2曲率半径より小さいものである、〔3〕に記載の太陽電池。
〔5〕 前記第1厚さは前記第2厚さより小さいものである、〔2〕〜〔4〕の何れか一項に記載の太陽電池。
〔6〕 前記酸化物は、前記半導体基板の一面上の一部に形成されたものである、〔1〕〜〔5〕の何れか一項に記載の太陽電池。
〔7〕 前記酸化物はアイランド型である、〔1〕〜〔6〕の何れか一項に記載の太陽電池。
〔8〕 前記酸化物はシリコン酸化物を含んでなる、〔1〕〜〔7〕の何れか一項に記載の太陽電池。
〔9〕 前記パッシベーション膜は非晶質シリコンを含んでなる、〔1〕〜〔8〕の何れか一項に記載の太陽電池。
〔10〕 前記パッシベーション膜上に配置される導電型領域をさらに備えてなり、
前記導電型領域は非晶質シリコンを含んでなる、〔1〕〜〔9〕の何れか一項に記載の太陽電池。
〔11〕 前記酸化物、前記パッシベーション膜、及び前記導電型領域の順に結晶性が小さくなるものである、〔10〕に記載の太陽電池。
〔12〕 太陽電池の製造方法であって、
半導体基板の前面及び後面のうちの少なくとも1つに凹凸部を形成し、
前記凹凸部上にパッシベーション膜を形成することを含んでなり、
前記パッシベーション膜と前記凹凸部との間に酸化物を形成することを含んでなり(半導体基板の前面及び後面のうちの少なくとも1つに凹凸部を形成し、
前記凹凸部上にパッシベーション膜を形成し、
前記パッシベーション膜と前記凹凸部との間に酸化物を形成することを含んでなり)、
前記酸化物は非晶質である、太陽電池の製造方法。
〔13〕 前記凹凸部を形成することは、
前記凸部及び前記凹部の各々が曲率を有するように前記凹凸部を形成することを含んでなり、
前記凸部の曲率は第1曲率半径を有するものであり、
前記凹部の曲率は前記第1曲率半径と異なる第2曲率半径を有するものである、〔12〕に記載の太陽電池の製造方法。
〔14〕 前記凸部及び前記凹部の各々が曲率を有するように前記凹凸部を形成することは、
前記半導体基板の表面を二段階の凹凸部形成工程により形成することを含んでなる、〔13〕に記載の太陽電池の製造方法。
〔15〕 前記二段階の凹凸部の形成工程は、
水酸化カリウム溶液を用いて前記半導体基板の表面をテクスチャリングし、
前記テクスチャリングされた半導体基板の表面を窒酸とフッ酸の混合溶液で再処理することを含んでなる、〔14〕に記載の太陽電池の製造方法。
〔16〕 前記パッシベーション膜上に配置される導電型領域を形成することを含んでなり、
前記導電型領域及び前記パッシベーション膜は非晶質シリコンを含んでなる、〔1〕2〜15の何れか一項に記載の太陽電池の製造方法。
〔17〕 前記酸化物は、前記半導体基板の一面上の一部に形成する、〔12〕〜〔16〕の何れか一項に記載の太陽電池の製造方法。
〔18〕 前記酸化物、前記パッシベーション膜、及び前記導電型領域の順に結晶性を小さくする、〔16〕又は〔17〕に記載の太陽電池の製造方法。
〔19〕 太陽電池パネルであって、
前面及び後面のうちの少なくとも1つに凹凸部を含む半導体基板と、
前記半導体基板の少なくとも一面上に形成されたアイランド形状の酸化物と、
前記凹凸部上に配置されるパッシベーション膜とを備えてなり、
前記凹凸部は凸部と凹部を備えてなり、及び、
前記パッシベーション膜は、
前記凸部上では第1厚さを有してなり、かつ、前記凹部上では前記第1厚さと異なる第2厚さを有する太陽電池と、
前記太陽電池の前面に配置された第1部材と、及び前記太陽電池の後面に配置された第2部材とを備えてなり、
前記第1部材及び第2部材はガラス及び透明シートのうちの少なくとも一つである、太陽電池パネル。
〔20〕 前記酸化物は前記半導体基板の後面に形成される、〔19〕に記載の太陽電池パネル。
Claims (20)
- 太陽電池であって、
前面及び後面のうちの少なくとも1つに凹凸部を備えた半導体基板と、
前記凹凸部上に配置されるパッシベーション膜とを備えてなり、
前記パッシベーション膜と前記半導体基板の一面の間に形成される酸化物を備えてなり、
前記酸化物は非晶質である、太陽電池。 - 前記半導体基板における前記凹凸部は凸部と凹部を備えてなり、及び、
前記パッシベーション膜は、
前記凸部上では第1厚さを有し、
前記凹部相では前記第1厚さと異なる第2厚さを有する、請求項1に記載の太陽電池。 - 前記凸部及び前記凹部の各々は曲率を有してなり、
前記凸部の前記曲率は第1曲率半径を有してなり、及び
前記凹部の前記曲率は第2曲率半径を有してなる、請求項2に記載の太陽電池。 - 前記第1曲率半径は前記第2曲率半径より小さいものである、請求項3に記載の太陽電池。
- 前記第1厚さは前記第2厚さより小さいものである、請求項2〜4の何れか一項に記載の太陽電池。
- 前記酸化物は、前記半導体基板の一面上の一部に形成されたものである、請求項1〜5の何れか一項に記載の太陽電池。
- 前記酸化物はアイランド型である、請求項1〜6の何れか一項に記載の太陽電池。
- 前記酸化物はシリコン酸化物を含んでなる、請求項1〜7の何れか一項に記載の太陽電池。
- 前記パッシベーション膜は非晶質シリコンを含んでなる、請求項1〜8の何れか一項に記載の太陽電池。
- 前記パッシベーション膜上に配置される導電型領域をさらに備えてなり、
前記導電型領域は非晶質シリコンを含んでなる、請求項1〜9の何れか一項に記載の太陽電池。 - 前記酸化物、前記パッシベーション膜、及び前記導電型領域の順に結晶性が小さくなるものである、請求項10に記載の太陽電池。
- 太陽電池の製造方法であって、
半導体基板の前面及び後面のうちの少なくとも1つに凹凸部を形成し、
前記凹凸部上にパッシベーション膜を形成することを含んでなり、
前記パッシベーション膜と前記凹凸部との間に酸化物を形成することを含んでなり、
前記酸化物は非晶質である、太陽電池の製造方法。 - 前記凹凸部を形成することは、
前記凸部及び前記凹部の各々が曲率を有するように前記凹凸部を形成することを含んでなり、
前記凸部の曲率は第1曲率半径を有するものであり、
前記凹部の曲率は前記第1曲率半径と異なる第2曲率半径を有するものである、請求項12に記載の太陽電池の製造方法。 - 前記凸部及び前記凹部の各々が曲率を有するように前記凹凸部を形成することは、
前記半導体基板の表面を二段階の凹凸部形成工程により形成することを含んでなる、請求項13に記載の太陽電池の製造方法。 - 前記二段階の凹凸部の形成工程は、
水酸化カリウム溶液を用いて前記半導体基板の表面をテクスチャリングし、
前記テクスチャリングされた半導体基板の表面を窒酸とフッ酸の混合溶液で再処理することを含んでなる、請求項14に記載の太陽電池の製造方法。 - 前記パッシベーション膜上に配置される導電型領域を形成することを含んでなり、
前記導電型領域及び前記パッシベーション膜は非晶質シリコンを含んでなる、請求項12〜15の何れか一項に記載の太陽電池の製造方法。 - 前記酸化物は、前記半導体基板の一面上の一部に形成する、請求項12〜16の何れか一項に記載の太陽電池の製造方法。
- 前記酸化物、前記パッシベーション膜、及び前記導電型領域の順に結晶性を小さくする、請求項16又は17に記載の太陽電池の製造方法。
- 太陽電池パネルであって、
前面及び後面のうちの少なくとも1つに凹凸部を含む半導体基板と、
前記半導体基板の少なくとも一面上に形成されたアイランド形状の酸化物と、
前記凹凸部上に配置されるパッシベーション膜とを備えてなり、
前記凹凸部は凸部と凹部を備えてなり、及び、
前記パッシベーション膜は、
前記凸部上では第1厚さを有してなり、かつ、前記凹部上では前記第1厚さと異なる第2厚さを有する太陽電池と、
前記太陽電池の前面に配置された第1部材と、及び前記太陽電池の後面に配置された第2部材とを備えてなり、
前記第1部材及び第2部材はガラス及び透明シートのうちの少なくとも一つである、太陽電池パネル。 - 前記酸化物は、前記半導体基板の後面に形成される、請求項19に記載の太陽電池パネル。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0062478 | 2017-05-19 | ||
KR20170062478 | 2017-05-19 | ||
KR1020170171553A KR102514785B1 (ko) | 2017-05-19 | 2017-12-13 | 태양 전지 및 이의 제조 방법 |
KR10-2017-0171553 | 2017-12-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020019387A Division JP7185818B2 (ja) | 2017-05-19 | 2020-02-07 | 太陽電池及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018195827A true JP2018195827A (ja) | 2018-12-06 |
Family
ID=64561791
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018095807A Pending JP2018195827A (ja) | 2017-05-19 | 2018-05-18 | 太陽電池及びその製造方法 |
JP2020019387A Active JP7185818B2 (ja) | 2017-05-19 | 2020-02-07 | 太陽電池及びその製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020019387A Active JP7185818B2 (ja) | 2017-05-19 | 2020-02-07 | 太陽電池及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP2018195827A (ja) |
KR (1) | KR102514785B1 (ja) |
CN (1) | CN108963013B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113875025A (zh) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | 太阳能电池和太阳能电池的制造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200125068A (ko) * | 2019-04-25 | 2020-11-04 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN111200038A (zh) * | 2020-01-13 | 2020-05-26 | 浙江晶科能源有限公司 | 一种TopCon结构太阳能电池制备方法 |
US11843071B2 (en) | 2021-08-04 | 2023-12-12 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, manufacturing method thereof, and photovoltaic module |
CN115528121A (zh) | 2021-08-04 | 2022-12-27 | 上海晶科绿能企业管理有限公司 | 太阳能电池及光伏组件 |
CN116565036A (zh) | 2023-06-08 | 2023-08-08 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998043304A1 (fr) * | 1997-03-21 | 1998-10-01 | Sanyo Electric Co., Ltd. | Element photovoltaique et procede de fabrication dudit element |
JP2009267056A (ja) * | 2008-04-24 | 2009-11-12 | Nitto Denko Corp | 太陽電池用基板、太陽電池素子、太陽電池用モジュールおよび太陽電池用基板の製造方法 |
US20120085397A1 (en) * | 2010-10-11 | 2012-04-12 | Choul Kim | Solar cell |
US20120132264A1 (en) * | 2010-11-30 | 2012-05-31 | Industrial Technology Research Institute | Solar cell and method for fabricating the same |
JP2013518426A (ja) * | 2010-01-27 | 2013-05-20 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブ | 結晶酸化シリコンパッシベーション薄膜を含む太陽電池及びその製造方法 |
WO2013168252A1 (ja) * | 2012-05-09 | 2013-11-14 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
JP2014082285A (ja) * | 2012-10-15 | 2014-05-08 | Mitsubishi Electric Corp | 太陽電池およびその製造方法、太陽電池モジュール |
JP2014229876A (ja) * | 2013-05-27 | 2014-12-08 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール |
US20150380581A1 (en) * | 2014-06-27 | 2015-12-31 | Michael C. Johnson | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
WO2016052635A1 (ja) * | 2014-09-30 | 2016-04-07 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法、及び太陽電池モジュールの製造方法 |
WO2017010029A1 (ja) * | 2015-07-13 | 2017-01-19 | パナソニックIpマネジメント株式会社 | 光電変換装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1407603A (zh) * | 2001-08-25 | 2003-04-02 | 日立电线株式会社 | 结晶硅薄膜半导体器件,光电器件及前者的制造方法 |
WO2003096385A2 (en) * | 2002-05-07 | 2003-11-20 | Asm America, Inc. | Silicon-on-insulator structures and methods |
EP1956659A4 (en) * | 2005-09-30 | 2012-07-25 | Sanyo Electric Co | SOLAR BATTERY AND SOLAR BATTERY MODULE |
JP6108858B2 (ja) * | 2012-02-17 | 2017-04-05 | 株式会社半導体エネルギー研究所 | p型半導体材料および半導体装置 |
JP2016192436A (ja) * | 2015-03-30 | 2016-11-10 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
CN107431100B (zh) * | 2015-03-31 | 2019-05-10 | 松下知识产权经营株式会社 | 太阳能电池元件、太阳能电池组件、以及制造方法 |
JP2016225362A (ja) * | 2015-05-27 | 2016-12-28 | 三菱電機株式会社 | 太陽電池素子、太陽電池モジュールおよび太陽電池素子の製造方法 |
-
2017
- 2017-12-13 KR KR1020170171553A patent/KR102514785B1/ko active IP Right Grant
-
2018
- 2018-05-18 JP JP2018095807A patent/JP2018195827A/ja active Pending
- 2018-05-18 CN CN201810478544.7A patent/CN108963013B/zh active Active
-
2020
- 2020-02-07 JP JP2020019387A patent/JP7185818B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998043304A1 (fr) * | 1997-03-21 | 1998-10-01 | Sanyo Electric Co., Ltd. | Element photovoltaique et procede de fabrication dudit element |
JP2009267056A (ja) * | 2008-04-24 | 2009-11-12 | Nitto Denko Corp | 太陽電池用基板、太陽電池素子、太陽電池用モジュールおよび太陽電池用基板の製造方法 |
JP2013518426A (ja) * | 2010-01-27 | 2013-05-20 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブ | 結晶酸化シリコンパッシベーション薄膜を含む太陽電池及びその製造方法 |
US20120085397A1 (en) * | 2010-10-11 | 2012-04-12 | Choul Kim | Solar cell |
US20120132264A1 (en) * | 2010-11-30 | 2012-05-31 | Industrial Technology Research Institute | Solar cell and method for fabricating the same |
WO2013168252A1 (ja) * | 2012-05-09 | 2013-11-14 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
JP2014082285A (ja) * | 2012-10-15 | 2014-05-08 | Mitsubishi Electric Corp | 太陽電池およびその製造方法、太陽電池モジュール |
JP2014229876A (ja) * | 2013-05-27 | 2014-12-08 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール |
US20150380581A1 (en) * | 2014-06-27 | 2015-12-31 | Michael C. Johnson | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
WO2016052635A1 (ja) * | 2014-09-30 | 2016-04-07 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法、及び太陽電池モジュールの製造方法 |
WO2017010029A1 (ja) * | 2015-07-13 | 2017-01-19 | パナソニックIpマネジメント株式会社 | 光電変換装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113875025A (zh) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | 太阳能电池和太阳能电池的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2020098929A (ja) | 2020-06-25 |
CN108963013B (zh) | 2022-05-27 |
KR20180127160A (ko) | 2018-11-28 |
CN108963013A (zh) | 2018-12-07 |
KR102514785B1 (ko) | 2023-03-29 |
JP7185818B2 (ja) | 2022-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7185818B2 (ja) | 太陽電池及びその製造方法 | |
EP2787541B1 (en) | Solar cell | |
US10453983B2 (en) | Solar cell and method of manufacturing | |
US10720537B2 (en) | Solar cell | |
US20140251424A1 (en) | Solar cell | |
US10141457B2 (en) | Solar cell | |
KR102132740B1 (ko) | 태양 전지 및 이의 제조 방법 | |
EP3404724B1 (en) | Solar cell and method for manufacturing the same | |
KR102218417B1 (ko) | 전하선택 박막을 포함하는 실리콘 태양전지 및 이의 제조방법 | |
US20150179843A1 (en) | Photovoltaic device | |
KR101867854B1 (ko) | 태양 전지 | |
KR102397002B1 (ko) | 태양 전지 | |
KR102611046B1 (ko) | 태양 전지 | |
KR102498523B1 (ko) | 태양 전지 및 이의 제조 방법 | |
KR20180064265A (ko) | 태양 전지 제조 방법 및 태양 전지 | |
KR102024084B1 (ko) | 태양 전지 및 이의 제조 방법 | |
KR20230027628A (ko) | 태양 전지 및 이의 제조 방법 | |
CN116759484A (zh) | 太阳能电池及其制作方法 | |
CN117099219A (zh) | 太阳能电池及其制造方法 | |
US8691616B2 (en) | Method for manufacturing thin film solar cell | |
KR20230117714A (ko) | 태양 전지 및 태양광 모듈 | |
CN118053921A (zh) | 太阳能电池及其制备方法、光伏组件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180518 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190409 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190709 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190909 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191008 |