JP2018190949A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018190949A5 JP2018190949A5 JP2017171722A JP2017171722A JP2018190949A5 JP 2018190949 A5 JP2018190949 A5 JP 2018190949A5 JP 2017171722 A JP2017171722 A JP 2017171722A JP 2017171722 A JP2017171722 A JP 2017171722A JP 2018190949 A5 JP2018190949 A5 JP 2018190949A5
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- transistor
- insulating film
- oxide film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022118918A JP7560512B2 (ja) | 2016-09-12 | 2022-07-26 | 半導体装置 |
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016178106 | 2016-09-12 | ||
| JP2016178106 | 2016-09-12 | ||
| JP2016183322 | 2016-09-20 | ||
| JP2016183322 | 2016-09-20 | ||
| JP2016233577 | 2016-11-30 | ||
| JP2016233577 | 2016-11-30 | ||
| JP2017099483 | 2017-05-19 | ||
| JP2017099483 | 2017-05-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022118918A Division JP7560512B2 (ja) | 2016-09-12 | 2022-07-26 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018190949A JP2018190949A (ja) | 2018-11-29 |
| JP2018190949A5 true JP2018190949A5 (enExample) | 2020-10-08 |
| JP7113602B2 JP7113602B2 (ja) | 2022-08-05 |
Family
ID=61560992
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017171722A Active JP7113602B2 (ja) | 2016-09-12 | 2017-09-07 | 表示装置及び電子機器 |
| JP2022118918A Active JP7560512B2 (ja) | 2016-09-12 | 2022-07-26 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022118918A Active JP7560512B2 (ja) | 2016-09-12 | 2022-07-26 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10276594B2 (enExample) |
| JP (2) | JP7113602B2 (enExample) |
| KR (1) | KR102403389B1 (enExample) |
| CN (2) | CN115857237A (enExample) |
| DE (1) | DE112017004584T5 (enExample) |
| TW (1) | TWI743187B (enExample) |
| WO (1) | WO2018047067A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12150755B1 (en) * | 2012-09-25 | 2024-11-26 | Micro Mobio Corporation | Integrated display with antenna system and method |
| JP7110116B2 (ja) * | 2017-01-16 | 2022-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10460822B2 (en) * | 2017-08-23 | 2019-10-29 | Arm Limited | Memory with a controllable I/O functional unit |
| CN108376695B (zh) * | 2018-02-05 | 2021-01-08 | 惠科股份有限公司 | 一种显示面板和显示装置 |
| JP7275112B2 (ja) | 2018-04-20 | 2023-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7410935B2 (ja) | 2018-05-24 | 2024-01-10 | ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク | 容量性センサ |
| JP2020092222A (ja) * | 2018-12-07 | 2020-06-11 | 日新電機株式会社 | 薄膜トランジスタ及びその製造方法 |
| KR102557031B1 (ko) | 2018-12-28 | 2023-07-19 | 삼성전자주식회사 | 금속 베젤을 이용하는 안테나 모듈 및 그것을 포함하는 전자 장치 |
| JP7201508B2 (ja) | 2019-03-28 | 2023-01-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| US12463322B1 (en) | 2019-04-03 | 2025-11-04 | Micro Mobio Corporation | Antenna in display |
| US11036322B2 (en) * | 2019-06-24 | 2021-06-15 | Wuhan China Star Optoelectronics Technology Co., Ltd | Array substrate and method of manufacturing same |
| JP2021002633A (ja) * | 2019-06-25 | 2021-01-07 | 日新電機株式会社 | 酸化物半導体の加工法方法及び薄膜トランジスタの製造方法 |
| KR102727034B1 (ko) | 2019-09-03 | 2024-11-07 | 삼성디스플레이 주식회사 | 표시 장치 및 제조 방법 |
| WO2021166940A1 (ja) * | 2020-02-20 | 2021-08-26 | 株式会社ニコン | トランジスタ、電子デバイス及びトランジスタの製造方法 |
| CN111243540A (zh) * | 2020-02-21 | 2020-06-05 | 合肥鑫晟光电科技有限公司 | 一种显示面板的驱动方法、其驱动电路及显示装置 |
| JP7454971B2 (ja) * | 2020-03-17 | 2024-03-25 | 東京エレクトロン株式会社 | 検出方法及びプラズマ処理装置 |
| KR102765756B1 (ko) * | 2020-11-17 | 2025-02-13 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP7595190B2 (ja) * | 2021-04-12 | 2024-12-05 | グーグル エルエルシー | 複数のディスプレイリフレッシュレートのシームレス移行のためのガンマカーブの再較正 |
| US12382700B2 (en) | 2021-12-09 | 2025-08-05 | AUO Corporation | Semiconductor device and manufacturing method thereof |
| CN116343685A (zh) * | 2021-12-24 | 2023-06-27 | 川奇光电科技（扬州）有限公司 | 电子纸显示装置及电子纸显示面板 |
| KR20230155700A (ko) * | 2022-05-04 | 2023-11-13 | 경희대학교 산학협력단 | 강유전성 박막 트랜지스터를 이용한 디스플레이 화소 회로 및 그 구동 방법 |
| CN115148152B (zh) * | 2022-06-28 | 2025-06-27 | 昆山国显光电有限公司 | 显示面板及其温度侦测方法、显示装置 |
| TWI825888B (zh) * | 2022-08-02 | 2023-12-11 | 元太科技工業股份有限公司 | 觸控顯示裝置及其製作方法 |
| JP2024137422A (ja) * | 2023-03-24 | 2024-10-07 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050017244A1 (en) | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
| US9306078B2 (en) | 2008-09-08 | 2016-04-05 | Cbrite Inc. | Stable amorphous metal oxide semiconductor |
| WO2011007675A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI559501B (zh) | 2009-08-07 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5458102B2 (ja) | 2009-09-04 | 2014-04-02 | 株式会社東芝 | 薄膜トランジスタの製造方法 |
| KR101980505B1 (ko) | 2009-10-08 | 2019-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 반도체 장치 및 그 제조 방법 |
| KR101962603B1 (ko) | 2009-10-16 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| CN102576734B (zh) | 2009-10-21 | 2015-04-22 | 株式会社半导体能源研究所 | 显示装置和包括显示装置的电子设备 |
| TWI525818B (zh) | 2010-11-30 | 2016-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之製造方法 |
| KR102254731B1 (ko) | 2012-04-13 | 2021-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN104380473B (zh) | 2012-05-31 | 2017-10-13 | 株式会社半导体能源研究所 | 半导体装置 |
| TWI671910B (zh) | 2012-09-24 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9166021B2 (en) | 2012-10-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9704894B2 (en) | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
| KR20160074514A (ko) | 2013-10-22 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP6625796B2 (ja) * | 2013-10-25 | 2019-12-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6486660B2 (ja) | 2013-11-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN110265482B (zh) | 2013-12-02 | 2023-08-08 | 株式会社半导体能源研究所 | 显示装置 |
| JP6506545B2 (ja) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9929279B2 (en) * | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6629509B2 (ja) * | 2014-02-21 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10043913B2 (en) | 2014-04-30 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device, display device, module, and electronic device |
| US20150318171A1 (en) * | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide |
| KR20150126272A (ko) * | 2014-05-02 | 2015-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물의 제작 방법 |
| KR102333604B1 (ko) | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치를 포함하는 표시 장치 |
| JP6587497B2 (ja) | 2014-10-31 | 2019-10-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10249644B2 (en) | 2015-02-13 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| KR102871323B1 (ko) | 2015-03-03 | 2025-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 또는 그를 포함하는 표시 장치 |
| JP2016183322A (ja) | 2015-03-25 | 2016-10-20 | 日本ポリプロ株式会社 | 電気電子機器部品搬送ケース用プロピレン系樹脂組成物及び電気電子機器部品搬送ケース |
| WO2017149413A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102513161B1 (ko) | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
| US9905579B2 (en) | 2016-03-18 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| KR102851714B1 (ko) | 2016-05-19 | 2025-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
-
2017
- 2017-09-06 WO PCT/IB2017/055351 patent/WO2018047067A1/en not_active Ceased
- 2017-09-06 CN CN202211570911.9A patent/CN115857237A/zh active Pending
- 2017-09-06 DE DE112017004584.3T patent/DE112017004584T5/de active Pending
- 2017-09-06 CN CN201780052947.9A patent/CN109643735B/zh active Active
- 2017-09-06 KR KR1020197009699A patent/KR102403389B1/ko active Active
- 2017-09-07 JP JP2017171722A patent/JP7113602B2/ja active Active
- 2017-09-07 US US15/698,117 patent/US10276594B2/en active Active
- 2017-09-08 TW TW106130878A patent/TWI743187B/zh active
-
2022
- 2022-07-26 JP JP2022118918A patent/JP7560512B2/ja active Active