JP2018190793A5 - - Google Patents

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Publication number
JP2018190793A5
JP2018190793A5 JP2017090394A JP2017090394A JP2018190793A5 JP 2018190793 A5 JP2018190793 A5 JP 2018190793A5 JP 2017090394 A JP2017090394 A JP 2017090394A JP 2017090394 A JP2017090394 A JP 2017090394A JP 2018190793 A5 JP2018190793 A5 JP 2018190793A5
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JP
Japan
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semiconductor
type
semiconductor substrate
semiconductor layer
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Pending
Application number
JP2017090394A
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English (en)
Japanese (ja)
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JP2018190793A (ja
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Publication date
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Priority to JP2017090394A priority Critical patent/JP2018190793A/ja
Priority claimed from JP2017090394A external-priority patent/JP2018190793A/ja
Priority to TW107112480A priority patent/TW201840023A/zh
Priority to KR1020180045454A priority patent/KR20180121369A/ko
Priority to CN201810393464.1A priority patent/CN108807659A/zh
Priority to US15/964,923 priority patent/US20180315919A1/en
Publication of JP2018190793A publication Critical patent/JP2018190793A/ja
Publication of JP2018190793A5 publication Critical patent/JP2018190793A5/ja
Pending legal-status Critical Current

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JP2017090394A 2017-04-28 2017-04-28 半導体装置 Pending JP2018190793A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017090394A JP2018190793A (ja) 2017-04-28 2017-04-28 半導体装置
TW107112480A TW201840023A (zh) 2017-04-28 2018-04-12 半導體裝置
KR1020180045454A KR20180121369A (ko) 2017-04-28 2018-04-19 반도체 장치
CN201810393464.1A CN108807659A (zh) 2017-04-28 2018-04-27 半导体装置
US15/964,923 US20180315919A1 (en) 2017-04-28 2018-04-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017090394A JP2018190793A (ja) 2017-04-28 2017-04-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2018190793A JP2018190793A (ja) 2018-11-29
JP2018190793A5 true JP2018190793A5 (enExample) 2020-05-28

Family

ID=63916183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017090394A Pending JP2018190793A (ja) 2017-04-28 2017-04-28 半導体装置

Country Status (5)

Country Link
US (1) US20180315919A1 (enExample)
JP (1) JP2018190793A (enExample)
KR (1) KR20180121369A (enExample)
CN (1) CN108807659A (enExample)
TW (1) TW201840023A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10333056B2 (en) * 2017-07-27 2019-06-25 Globalfoundries Singapore Pte. Ltd. Hall element for 3-D sensing and method for producing the same
JP7266386B2 (ja) * 2018-11-09 2023-04-28 エイブリック株式会社 半導体装置
CN116113309B (zh) * 2023-04-13 2023-07-25 南京邮电大学 一种采用双保护环的低失调霍尔器件及其使用方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JP2005333103A (ja) * 2004-03-30 2005-12-02 Denso Corp 縦型ホール素子およびその製造方法
WO2006085503A1 (ja) * 2005-02-08 2006-08-17 Rohm Co., Ltd. 磁気センサ回路、及び、その磁気センサ回路を有する携帯端末
JP4940965B2 (ja) * 2007-01-29 2012-05-30 株式会社デンソー 回転センサ及び回転センサ装置
EP2234185B1 (en) * 2009-03-24 2012-10-10 austriamicrosystems AG Vertical Hall sensor and method of producing a vertical Hall sensor
JP5815986B2 (ja) * 2010-07-05 2015-11-17 セイコーインスツル株式会社 ホールセンサ
US9217783B2 (en) * 2012-09-13 2015-12-22 Infineon Technologies Ag Hall effect device
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
JP2016152271A (ja) * 2015-02-16 2016-08-22 エスアイアイ・セミコンダクタ株式会社 縦型ホール素子の製造方法
DE102015204637A1 (de) * 2015-03-13 2016-09-15 Infineon Technologies Ag Verfahren zum Dotieren eines aktiven Hall-Effekt-Gebiets einer Hall-Effekt-Vorrichtung und Hall-Effekt-Vorrichtung mit einem dotierten aktiven Hall-Effekt-Gebiet
US10109787B2 (en) * 2016-10-27 2018-10-23 Texas Instruments Incorporated Well-based vertical hall element with enhanced magnetic sensitivity

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