JP2018187695A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2018187695A JP2018187695A JP2017090060A JP2017090060A JP2018187695A JP 2018187695 A JP2018187695 A JP 2018187695A JP 2017090060 A JP2017090060 A JP 2017090060A JP 2017090060 A JP2017090060 A JP 2017090060A JP 2018187695 A JP2018187695 A JP 2018187695A
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- wafer
- protective film
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- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 230000001681 protective effect Effects 0.000 claims abstract description 217
- 239000011347 resin Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 230000006837 decompression Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Dicing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
11a 表面
11b 裏面
11c 外周縁
11d デバイス領域
11e 外周余剰領域
13 ストリート(ストリート)
15 デバイス
17 バンプ(凹凸)
21 保護フィルム
23 シート(キャリアシート)
25 液状樹脂
27 保護部材
29 シート(離型シート)
2 緩衝材
4 錘
6 減圧チャンバ
6a 箱体
6b 扉体
8 排気管
10 バルブ
12 吸気管
14 バルブ
16 支持テーブル
16a 支持面
16b ガイド部
18 ヒーター
22 保護部材固定装置
24 保持テーブル
24a 凹部
24b 吸気路
26 紫外線光源
28 プレート
30 バルブ
32 吸引源
34 ウェーハ保持ユニット
34a 下面
42 研削装置
44 保持テーブル(チャックテーブル)
44a 保持面
46 研削ユニット
48 スピンドル
50 マウント
52 研削ホイール
54 ホイール基台
56 研削砥石
62 ウェーハ保持ユニット
62a 保持面
64 剥離ユニット
72 押圧ユニット(押圧部)
74 緩衝材
82 保持テーブル
82a 保持面
84 ヒーター
86 ローラー
Claims (8)
- 凹凸のあるデバイスが形成されたデバイス領域と該デバイス領域を囲む外周余剰領域とを表面に有するウェーハの該外周余剰領域を除く該デバイス領域を保護フィルムで覆い、該保護フィルムを該凹凸に倣って該表面側に密着させる保護フィルム密着ステップと、
外的刺激によって硬化する硬化型の液状樹脂からなる保護部材で該保護フィルム及び露出している該外周余剰領域を被覆し、該ウェーハの該表面側が該保護部材で覆われた保護部材付きウェーハを形成する保護部材付きウェーハ形成ステップと、
チャックテーブルの保持面で該保護部材付きウェーハの該保護部材側を保持した状態で、該ウェーハの裏面を研削し、該ウェーハを薄くする研削ステップと、
薄くなった該ウェーハから該保護部材及び該保護フィルムを剥離する剥離ステップと、を備えることを特徴とするウェーハの加工方法。 - 該ウェーハの外周縁の該表面側は面取りされており、
該保護部材付きウェーハ形成ステップでは、該面取りされた該外周縁の該表面側の一部を含む該ウェーハの該表面側を覆うように該保護部材を被覆することを特徴とする請求項1に記載のウェーハの加工方法。 - 該保護部材付きウェーハ形成ステップでは、平坦なシートに塗布された該液状樹脂に該保護フィルムを介して該ウェーハを押し当てた後、該液状樹脂を外的刺激で硬化させて該ウェーハに該液状樹脂からなる該保護部材を固定することを特徴とする請求項1又は請求項2に記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、減圧下で該保護フィルムを該ウェーハの該表面に押し当てた後、大気圧によって該保護フィルムを該凹凸に倣って密着させることを特徴とする請求項1から請求項3のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、緩衝材を介して該保護フィルムを押すことで該保護フィルムを該ウェーハの該表面側に押し当てることを特徴とする請求項1から請求項4のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、緩衝材を介して該保護フィルムに錘を載せることで該保護フィルムを該ウェーハの該表面側に押し当てることを特徴とする請求項1から請求項5のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、該緩衝材を介して大気圧下で該保護フィルムに該錘を載せた後、該錘が載せられた該ウェーハを減圧チャンバに投入することを特徴とする請求項6に記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、該デバイス領域に該保護フィルムを重ねた状態で該ウェーハを減圧チャンバに投入し、該減圧チャンバが備える押圧部によって該保護フィルムを押すことで該保護フィルムを該ウェーハの該表面側に押し当てることを特徴とする請求項1から請求項5に記載のウェーハの加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017090060A JP6906843B2 (ja) | 2017-04-28 | 2017-04-28 | ウェーハの加工方法 |
KR1020180043432A KR102450305B1 (ko) | 2017-04-28 | 2018-04-13 | 웨이퍼의 가공 방법 |
SG10201803306QA SG10201803306QA (en) | 2017-04-28 | 2018-04-19 | Wafer processing method |
CN201810371239.8A CN108789025B (zh) | 2017-04-28 | 2018-04-24 | 晶片的加工方法 |
TW107114221A TWI759469B (zh) | 2017-04-28 | 2018-04-26 | 晶圓加工方法 |
DE102018206483.0A DE102018206483A1 (de) | 2017-04-28 | 2018-04-26 | Waferbearbeitungsverfahren |
US15/964,396 US10312099B2 (en) | 2017-04-28 | 2018-04-27 | Wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017090060A JP6906843B2 (ja) | 2017-04-28 | 2017-04-28 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018187695A true JP2018187695A (ja) | 2018-11-29 |
JP6906843B2 JP6906843B2 (ja) | 2021-07-21 |
Family
ID=63797140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017090060A Active JP6906843B2 (ja) | 2017-04-28 | 2017-04-28 | ウェーハの加工方法 |
Country Status (7)
Country | Link |
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US (1) | US10312099B2 (ja) |
JP (1) | JP6906843B2 (ja) |
KR (1) | KR102450305B1 (ja) |
CN (1) | CN108789025B (ja) |
DE (1) | DE102018206483A1 (ja) |
SG (1) | SG10201803306QA (ja) |
TW (1) | TWI759469B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6837717B2 (ja) * | 2017-05-11 | 2021-03-03 | 株式会社ディスコ | ウェーハの加工方法 |
JP6940217B2 (ja) | 2017-05-18 | 2021-09-22 | 株式会社ディスコ | ウェハ処理に使用する為の保護シーティング、ウェハ、ウェハ及び保護シーティングの組合せの取扱いシステム |
JP7071782B2 (ja) * | 2017-12-28 | 2022-05-19 | 株式会社ディスコ | ウェーハの加工方法 |
CN110024102B (zh) | 2019-02-26 | 2020-10-30 | 长江存储科技有限责任公司 | 用于在晶圆表面贴黏胶膜的方法和装置 |
TWI822982B (zh) * | 2019-03-27 | 2023-11-21 | 日商三井化學東賽璐股份有限公司 | 貼附裝置 |
KR102455146B1 (ko) * | 2020-02-10 | 2022-10-17 | 주식회사 나노인 | 기판의 구조충진을 위한 가역적 코팅 방법 및 봉지 방법 |
CN111987146A (zh) * | 2020-09-21 | 2020-11-24 | 上海擎茂微电子科技有限公司 | 一种用于制备半导体器件的晶圆及晶圆的背面减薄方法 |
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US20180315610A1 (en) | 2018-11-01 |
TWI759469B (zh) | 2022-04-01 |
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US10312099B2 (en) | 2019-06-04 |
JP6906843B2 (ja) | 2021-07-21 |
KR102450305B1 (ko) | 2022-09-30 |
SG10201803306QA (en) | 2018-11-29 |
DE102018206483A1 (de) | 2018-10-31 |
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