SG10201803306QA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201803306QA
SG10201803306QA SG10201803306QA SG10201803306QA SG10201803306QA SG 10201803306Q A SG10201803306Q A SG 10201803306QA SG 10201803306Q A SG10201803306Q A SG 10201803306QA SG 10201803306Q A SG10201803306Q A SG 10201803306QA SG 10201803306Q A SG10201803306Q A SG 10201803306QA
Authority
SG
Singapore
Prior art keywords
wafer
protective member
processing method
protective film
front side
Prior art date
Application number
SG10201803306QA
Inventor
Sekiya Kazuma
Priewasser Karl
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803306QA publication Critical patent/SG10201803306QA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

WAFER PROCESSING METHOD A wafer processing method includes a protective film providing step of providing a protective film on the front side of a wafer, a wafer unit forming step of applying a liquid resin curable by an external stimulus to the front side of the wafer and then curing the liquid resin by applying the external stimulus to form a protective member, thereby forming a wafer unit composed of the wafer, the protective film, and the protective member in the condition where the front side of the wafer is covered with the protective member, a grinding step of holding the protective member on a holding surface of a chuck table and then grinding the back side of the wafer of the wafer unit to thereby reduce the thickness of the wafer, and a peeling step of peeling the protective member and the protective film from the wafer reduced in thickness. (Figure 1)
SG10201803306QA 2017-04-28 2018-04-19 Wafer processing method SG10201803306QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017090060A JP6906843B2 (en) 2017-04-28 2017-04-28 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201803306QA true SG10201803306QA (en) 2018-11-29

Family

ID=63797140

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803306QA SG10201803306QA (en) 2017-04-28 2018-04-19 Wafer processing method

Country Status (7)

Country Link
US (1) US10312099B2 (en)
JP (1) JP6906843B2 (en)
KR (1) KR102450305B1 (en)
CN (1) CN108789025B (en)
DE (1) DE102018206483A1 (en)
SG (1) SG10201803306QA (en)
TW (1) TWI759469B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6837717B2 (en) * 2017-05-11 2021-03-03 株式会社ディスコ Wafer processing method
KR102345923B1 (en) 2017-05-18 2022-01-03 가부시기가이샤 디스코 Protective sheeting for use in processing wafers, handling systems for wafers, and combinations of wafers and protective sheeting
JP7071782B2 (en) * 2017-12-28 2022-05-19 株式会社ディスコ Wafer processing method
WO2020172785A1 (en) 2019-02-26 2020-09-03 Yangtze Memory Technologies Co., Ltd. Method and device for wafer taping
CN113614888A (en) * 2019-03-27 2021-11-05 三井化学东赛璐株式会社 Protective film, method for attaching protective film, and method for manufacturing semiconductor component
KR102455146B1 (en) * 2020-02-10 2022-10-17 주식회사 나노인 Reversible Coating Method for Encapsulating and Filling Structures on Substrates
CN111987146A (en) * 2020-09-21 2020-11-24 上海擎茂微电子科技有限公司 Wafer for preparing semiconductor device and back thinning method of wafer

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556399B2 (en) 1996-07-29 2004-08-18 株式会社ディスコ Polishing method for semiconductor wafer
JP2008060151A (en) * 2006-08-29 2008-03-13 Nitto Denko Corp Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet
JP4986568B2 (en) * 2006-10-11 2012-07-25 株式会社ディスコ Wafer grinding method
JP5202832B2 (en) * 2006-10-12 2013-06-05 東京応化工業株式会社 Wafer circuit surface protection method and wafer thinning method
JP5318435B2 (en) * 2008-02-29 2013-10-16 日東電工株式会社 Adhesive sheet for semiconductor wafer back grinding and semiconductor wafer back grinding method using this back grinding adhesive sheet
JP5501060B2 (en) * 2009-04-02 2014-05-21 日東電工株式会社 Method for laminating adhesive sheet for protecting semiconductor wafer, and adhesive sheet for protecting semiconductor wafer used in this laminating method
JP2012079910A (en) * 2010-10-01 2012-04-19 Disco Abrasive Syst Ltd Processing method of plate-like object
JP2012079911A (en) * 2010-10-01 2012-04-19 Disco Abrasive Syst Ltd Processing method of plate-like object
JP5360260B2 (en) * 2012-05-08 2013-12-04 Ｊｓｒ株式会社 SUBSTRATE PROCESSING METHOD, LAMINATE, AND SEMICONDUCTOR DEVICE
JP5907805B2 (en) * 2012-05-22 2016-04-26 株式会社ディスコ Surface protection tape and wafer processing method
JP5934578B2 (en) * 2012-05-24 2016-06-15 株式会社ディスコ How to apply protective tape
JP6061590B2 (en) * 2012-09-27 2017-01-18 株式会社ディスコ Surface protection member and processing method
JP6061731B2 (en) * 2013-03-01 2017-01-18 株式会社ディスコ Surface protection member and wafer processing method
US9184083B2 (en) * 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support
US9418894B2 (en) * 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
JP6385131B2 (en) * 2014-05-13 2018-09-05 株式会社ディスコ Wafer processing method
JP6385133B2 (en) * 2014-05-16 2018-09-05 株式会社ディスコ Wafer processing method and intermediate member
JP2017005158A (en) * 2015-06-12 2017-01-05 株式会社ディスコ Method for grinding rear surface of wafer
WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
DE102015216619B4 (en) * 2015-08-31 2017-08-10 Disco Corporation Method for processing a wafer
JP2017079291A (en) * 2015-10-21 2017-04-27 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
TW201838767A (en) 2018-11-01
US10312099B2 (en) 2019-06-04
CN108789025B (en) 2021-10-08
US20180315610A1 (en) 2018-11-01
TWI759469B (en) 2022-04-01
CN108789025A (en) 2018-11-13
DE102018206483A1 (en) 2018-10-31
KR102450305B1 (en) 2022-09-30
JP6906843B2 (en) 2021-07-21
KR20180121365A (en) 2018-11-07
JP2018187695A (en) 2018-11-29

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