JP2018170472A - 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 - Google Patents
半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000007788 liquid Substances 0.000 title claims description 65
- 238000009792 diffusion process Methods 0.000 description 23
- 230000006870 function Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04541—Specific driving circuit
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
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- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
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-
- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04543—Block driving
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04586—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads of a type not covered by groups B41J2/04575 - B41J2/04585, or of an undefined type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/145—Arrangement thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/17—Ink jet characterised by ink handling
- B41J2/175—Ink supply systems ; Circuit parts therefor
- B41J2/17503—Ink cartridges
- B41J2/17513—Inner structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J29/00—Details of, or accessories for, typewriters or selective printing mechanisms not otherwise provided for
- B41J29/38—Drives, motors, controls or automatic cut-off devices for the entire printing mechanism
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/17—Readable information on the head
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Abstract
Description
図1は、半導体装置の回路構成の一例であり、アンチヒューズ素子に情報が書込まれる前の状態を示している。
図1を用いて、読出し時にアンチヒューズ素子11及び抵抗素子Rpに供給する電流量を並列抵抗素子Rpの抵抗値に合わせて変化させることで読出し時の信頼性低下を防ぐ例について説明する。ここでは、アンチヒューズ素子11の情報を読み出す際、並列抵抗素子Rpの抵抗のバラツキ(設定値からのずれ)の影響を低減する調整部として、抵抗素子Rpと同じ基板上に配された電流供給部301を有する例を示す。
VHout=C×Rp/Ri
ここで、Cは定数(≒VDDA)
本実施の形態では、上記実施の形態で示したメモリ部10を複数配置した場合の例を示す。
本実施の形態では、上記実施の形態に記載の半導体装置の適用例として、半導体装置を記録装置に適用した例について説明する。
本実施の形態では、調整部が抵抗素子Rpのバラツキ(ずれ)を、分圧を用いて相殺するよう構成された抵抗素子Rrを有する例について説明する。
VHout=Vid×Rp/(Rr+Rp)
本実施の形態では、調整部が、抵抗素子Rpと同じ基板上に配され、トランジスタを有する電流供給部の例について説明する。具体的には、電流供給部が、トラジスタMD1の動作条件を制御することで、抵抗素子Rpのバラツキに関係なく精度よく読み出しを行うことを可能とするよう構成されている例について説明する。
Vds≧Vgs−Vth
Vds≦Vgs−Vth
本実施の形態に係る半導体装置は、実施の形態5で示した1bitに対応するメモリ部10を、複数有する。この例を図9に示す。他の実施の形態と同様の構成、機能、効果の部分については説明を省略する。
MD1 トラジスタ
11 アンチヒューズ素子
Rp 並列抵抗
301 電流供給部
Claims (23)
- 半導体基板上に配され、第1電位の第1端子に接続されたトランジスタと、
前記半導体基板上に配され、前記第1電位と異なる第2電位の第2端子と前記トランジスタとの間に接続されたアンチヒューズ素子と、
前記半導体基板上に配され、前記第1端子と前記トランジスタとの間で、前記アンチヒューズ素子と並列に接続された第1抵抗素子と、
前記半導体基板上に配され、トランジスタを有し、前記アンチヒューズ素子及び前記第1抵抗素子に電流を供給する電流供給部と、
を有する半導体装置。 - 前記電流供給部を介して前記第2端子に接続された第2抵抗素子を有する請求項1に記載の半導体装置。
- 前記第1抵抗素子と前記第2抵抗素子は拡散抵抗であることを特徴とする請求項2に記載の半導体装置。
- 前記電流供給部のトラジスタは、カレントミラー回路を構成する第1トランジスタと第2トランジスタを有し、
前記第1トランジスタ及び前記第2トランジスタのソース及びドレインの一方には、外部から電圧が印加され、
前記第1トランジスタ及び前記第2トランジスタのゲートは、前記第1トランジスタのソース及びドレインの他方に接続され、
前記第1トランジスタのソース及びドレインの他方は、前記第2抵抗素子を介して前記第2端子と電位の異なる端子に接続され、
前記第2トランジスタのソース及びドレインの他方は、前記第2端子にせつぞくされていることを特徴とする請求項2または3に記載の半導体装置。 - 前記電流供給部と前記第2端子の間に接続されたスイッチを有することを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記スイッチは、前記アンチヒューズ素子に情報が書き込まれるときはオフ状態となり、前記アンチヒューズ素子に記憶されている情報が読みだされるときはオン状態となるよう制御されることを特徴とする請求項5に記載の半導体装置。
- 前記電流供給部が、前記第1端子と前記トランジスタとの間に接続されている請求項1に記載の半導体装置。
- 前記アンチヒューズ素子の導通状態の時に、前記トランジスタが飽和領域で動作し、前記アンチヒューズ素子が非導通状態の時に、前記トランジスタが線形領域で動作することを特徴とする請求項7に記載の半導体装置。
- 前記電流供給部が、前記アンチヒューズ素子の書き込み時に第1の電流量を供給し、前記アンチヒューズ素子の読みだし時に第2の電流量を供給するように構成され、前記第1の電流量は前記第2の電流量よりも大きいことを特徴とする請求項7、及び8のいずれか1項に記載の半導体装置。
- 前記電流供給部に含まれる前記トランジスタは、ゲートに印加される電圧に応じて供給する電流量が制御されるように構成されたことを特徴とする請求項7、8、及び9のいずれか1項に記載の半導体装置。
- 半導体基板上に配され、第1電位の第1端子に接続されたトランジスタと、
前記半導体基板上に配され、前記第1電位と異なる第2電位の第2端子と前記トランジスタとの間に接続されたアンチヒューズ素子と、
前記半導体基板上に配され、前記第1端子と前記トランジスタの間で、前記アンチヒューズ素子と並列に接続された第1抵抗素子と、
前記半導体基板上に配され、外部から電流が供給される第3端子と、
前記第3端子と前記第2端子との間に接続された第3抵抗素子と、
を有する半導体装置。 - 前記第1抵抗素子と前記第3抵抗素子は拡散抵抗であることを特徴とする請求項11に記載の半導体装置。
- 前記第1抵抗素子と前記第3抵抗素子は、前記半導体基板において前記トランジスタが配される面に対する平面視において、長さ、及び幅が等しいことを特徴とする請求項11または12に記載の半導体装置。
- 前記アンチヒューズ素子及び前記第1抵抗素子を有するメモリ部を複数有し、
複数の前記電流供給部を有し、
前記複数のメモリ部は第1メモリ部及び第2メモリ部を有し、
前記複数の電流供給部は、第1電流供給部及び第2電流供給部を有し、
前記第1メモリ部は、前記第1電流供給部及び前記第2電流供給部のうち、前記第1メモリ部が有する前記並列抵抗素子からの接続配線の距離が短い方に接続されていることを特徴とする請求項1乃至13のいずれか1項に記載の半導体装置。 - 半導体基板上に配され、第1端子に接続されたトランジスタと、
前記半導体基板上に配され、前記トランジスタと第2端子の間に接続されたアンチヒューズ素子と、
前記半導体基板上に配され、前記第1端子と前記トランジスタの間で、前記アンチヒューズ素子と並列に接続された第1抵抗素子と、
前記半導体基板上に配され、アンチヒューズ素子に書き込まれた情報を読み出す際に、前記第1抵抗素子のばらつきの影響を低減するように作用する調整部と、
を有する半導体装置。 - 前記調整部は、前記半導体基板上に配され、トランジスタを有し、前記アンチヒューズ素子及び前記第1抵抗素子に電流を供給する電流供給部を含むことを特徴とする請求項15に記載の半導体装置。
- 前記電流供給部は、可変電流源であることを特徴とする請求項16に記載の半導体装置。
- 前記電流供給部を介して前記第2端子に接続された第2抵抗素子を有する請求項16に記載の半導体装置。
- 前記調整部は、外部から電流が供給される第3端子、及び前記第2端子と前記第3端子の間に接続される第3抵抗を有することを特徴とする請求項15に記載の半導体装置。
- 液体を吐出するための複数の吐出用素子と、
前記複数の吐出用素子と電気的に接続された制御回路と、
前記制御回路と電気的に接続された請求項1乃至19のいずれか1項に記載の半導体装置と、
を有する液体吐出ヘッド用基板。 - 前記吐出用素子は、ヒータであることを特徴とする請求項20に記載の液体吐出ヘッド用基板。
- 請求項20または21に記載の液体吐出ヘッド用基板と、
前記液体吐出ヘッド用基板の前記複数の吐出用素子のそれぞれ異なる1つに対応するように配された複数の吐出口と、
を有する記録部と、
前記記録部に取り付けられたインク容器と、
を有する液体吐出ヘッド - 請求項22に記載の液体吐出ヘッドと、
前記液体吐出ヘッドが搭載されるキャリッジと、
前記キャリッジを移動するためのガイドと、
を有する液体吐出装置。
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