JP2018164082A5 - - Google Patents

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JP2018164082A5
JP2018164082A5 JP2018054214A JP2018054214A JP2018164082A5 JP 2018164082 A5 JP2018164082 A5 JP 2018164082A5 JP 2018054214 A JP2018054214 A JP 2018054214A JP 2018054214 A JP2018054214 A JP 2018054214A JP 2018164082 A5 JP2018164082 A5 JP 2018164082A5
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Japan
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layer
photoelectric conversion
hole injection
injection blocking
blocking layer
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JP2018054214A
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Japanese (ja)
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JP2018164082A (ja
JP7114291B2 (ja
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JP2018054214A 2017-03-24 2018-03-22 光電変換素子の作製方法 Active JP7114291B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017059878 2017-03-24
JP2017059878 2017-03-24

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JP2018164082A JP2018164082A (ja) 2018-10-18
JP2018164082A5 true JP2018164082A5 (enrdf_load_stackoverflow) 2021-05-06
JP7114291B2 JP7114291B2 (ja) 2022-08-08

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JP2018054214A Active JP7114291B2 (ja) 2017-03-24 2018-03-22 光電変換素子の作製方法

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JP (1) JP7114291B2 (enrdf_load_stackoverflow)
WO (1) WO2018172880A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7402635B2 (ja) * 2019-08-05 2023-12-21 日本放送協会 固体撮像素子および撮像装置、ならびに白キズ抑制方法
JP7344086B2 (ja) * 2019-10-24 2023-09-13 日本放送協会 光電変換素子及びその製造方法並びに積層型撮像素子
JP7479231B2 (ja) * 2020-07-16 2024-05-08 日本放送協会 光電変換膜、光電変換膜の製造方法、光電変換素子
CN113228282B (zh) * 2021-03-29 2023-12-05 长江存储科技有限责任公司 用于增大半导体器件中的多晶硅晶粒尺寸的阶梯式退火工艺
JP2023023515A (ja) * 2021-08-05 2023-02-16 日本放送協会 光電変換素子および光電変換素子の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008072090A (ja) * 2006-08-14 2008-03-27 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2010192690A (ja) * 2009-02-18 2010-09-02 Tdk Corp 太陽電池の製造方法
JP2011086770A (ja) * 2009-10-15 2011-04-28 Idemitsu Kosan Co Ltd 光電変換素子及びその製造方法
KR20120076439A (ko) 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 엑스선 검출 장치
CN104823280B (zh) * 2012-12-10 2018-04-03 富士胶片株式会社 放射线检测装置
JP6463937B2 (ja) * 2013-10-18 2019-02-06 日本放送協会 光電変換素子、及び、光電変換素子の製造方法
JP6482185B2 (ja) 2014-05-12 2019-03-13 日本放送協会 固体撮像素子
JP2015225886A (ja) 2014-05-26 2015-12-14 日本放送協会 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池
JP2016082011A (ja) * 2014-10-15 2016-05-16 日東電工株式会社 Cigs膜の品質評価方法およびそれを用いたcigs膜の製法、並びに当該製法によって得られたcigs膜を用いた太陽電池
US11728356B2 (en) * 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
JP6570173B2 (ja) * 2015-07-01 2019-09-04 日本放送協会 光電変換素子、光電変換素子の製造方法、固体撮像素子
JP6575997B2 (ja) 2015-07-30 2019-09-18 日本放送協会 光電変換素子、光電変換素子の製造方法、固体撮像素子
JP2017045933A (ja) * 2015-08-28 2017-03-02 株式会社半導体エネルギー研究所 光電変換素子の製造方法

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