JP2018152827A - 振動デバイス、発振器、電子機器および移動体 - Google Patents
振動デバイス、発振器、電子機器および移動体 Download PDFInfo
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- JP2018152827A JP2018152827A JP2017049699A JP2017049699A JP2018152827A JP 2018152827 A JP2018152827 A JP 2018152827A JP 2017049699 A JP2017049699 A JP 2017049699A JP 2017049699 A JP2017049699 A JP 2017049699A JP 2018152827 A JP2018152827 A JP 2018152827A
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- 239000000758 substrate Substances 0.000 claims description 64
- 230000000694 effects Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000010453 quartz Substances 0.000 description 9
- 230000005284 excitation Effects 0.000 description 8
- 239000000725 suspension Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000000470 constituent Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/4809—Loop shape
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
【解決手段】振動デバイスは、第1端子を有するベースと、前記ベースに配置され、第2端子を有する回路素子と、前記ベースの平面視で、前記第1端子と前記第2端子との間に位置し、振動片および前記振動片を収納する振動片パッケージを備えている振動子と、前記振動子に配置されている配線部と、前記第1端子と前記配線部とを電気的に接続する第1ワイヤーと、前記配線部と前記第2端子とを電気的に接続する第2ワイヤーと、を有する。
【選択図】図1
Description
前記ベースに配置され、第2端子を有する回路素子と、
前記ベースの平面視で、前記第1端子と前記第2端子との間に位置し、振動片および前記振動片を収納する振動片パッケージを備えている振動子と、
前記振動子に配置されている配線部と、
前記第1端子と前記配線部とを電気的に接続する第1ワイヤーと、
前記配線部と前記第2端子とを電気的に接続する第2ワイヤーと、を有することを特徴とする。
これにより、第1端子と第2端子とを容易に電気的に接続することができる。
これにより、振動デバイスの低背化を図ることができる。
前記基体の前記ベース側と反対側の面には、前記振動片と電気的に接続されている第3端子が配置されており、
前記第2端子は、複数配置されており、
複数の前記第2端子のうちの前記配線部と電気的に接続されていないものと前記第3端子とを電気的に接続する第3ワイヤーを有していることが好ましい。
これにより、回路素子と振動子との電気的な接続が容易となる。
前記配線部と前記第3ワイヤーとの接続部および前記第3端子と前記第3ワイヤーとの接続部の少なくとも一方は、前記ベースの平面視で、前記側壁部と重なっていることが好ましい。
これにより、第3ワイヤーを配線部や第3端子に接続する際に、側壁部が下方から支えることで、キャピラリーを第3端子により強く押し当てることができ、第3端子に超音波をより効率的に与えることができる。そのため、より強固に、第3ワイヤーと第3端子とを接続することができる。
前記一対の第3端子の間に前記面の中心が位置しており、
前記一対の第3端子の間に前記配線部が設けられていることが好ましい。
これにより、一対の第3端子を離間して配置することができ、これらの間に、配線部を配置するためのスペースをより大きく確保することができる。
これにより、配線部の構成が簡単なものとなる。
これにより、配線部をシールド層として機能させることができ、振動子を外乱から保護することができる。
前記第1辺、前記第2辺、前記第3辺および前記第4辺に沿って、前記第1端子を含む複数の端子が配置されていることが好ましい。
これにより、ベースの周囲を有効活用することができ、より多くの第1端子を配置することができる。
これにより、前述したような振動デバイスの効果がより顕著なものとなる。
これにより、回路素子および振動子を水分、埃、衝撃等から保護することができ、振動デバイス1の信頼性が向上する。
前記第1端子と電気的に接続されている第2端子を有する回路素子と、
配線部が配置されている振動子と、を備え、
前記第1端子と前記第2端子とが前記配線部を介して電気的に接続されていることを特徴とする。
これにより、振動デバイスは、高い信頼性を発揮することができると共に、小型化(低背化)を図ることができる。
これにより、本発明の振動デバイスの効果を享受でき、高い信頼性を有する発振器が得られる。
これにより、本発明の振動デバイスの効果を享受でき、高い信頼性を有する電子機器が得られる。
これにより、本発明の振動デバイスの効果を享受でき、高い信頼性を有する移動体が得られる。
まず、本発明の第1実施形態に係る発振器(振動デバイス)について説明する。
パッケージ2は、QFN(Quad Flat Non−leaded package)であり、平面視形状が略四角形のブロック状(板状)をなしている。このようなパッケージ2は、図1および図3に示すように、ベース20と、モールド部24(封止部)と、を有している。また、ベース20は、略四角形の平面視形状を有する板状のダイパッド21(搭載部)と、ダイパッド21の角部に接続された4つの吊りリード22と、ダイパッド21の周囲に沿って配置された複数のリード23(第1端子)と、を有している。ただし、ベース20の構成としては、特に限定されず、例えば、ダイパッド21の平面視形状は、略四角形でなくてもよい。
図4に示すように、振動子3は、振動片31と、振動片31を収納する振動片パッケージ39と、を有している。
回路素子4は、例えば、振動片31を発振させる発振回路を有し、所定の周波数の信号を出力することができる。
図1および図6に示すように、中継基板5は、基板51と、基板51に設けられた複数(4本)の配線52と、を有している。このような中継基板5としては、特に限定されず、例えば、リジッド配線基板、フレキシブル配線基板、リジッドフレキシブル配線基板等の各種プリント配線基板を用いることができる。これにより、中継基板5の構成が簡単なものとなる。なお、本実施形態では、中継基板5は、4本の配線52を有しているが、配線52の数としては、特に限定されず、1本ないし3本であってもよいし、5本以上であってもよい。
次に、本発明の第2実施形態に係る発振器(振動デバイス)について説明する。
次に、本発明の第3実施形態に係る電子機器について説明する。
図13に示すモバイル型(またはノート型)のパーソナルコンピューター1100は、本発明の振動デバイスを備える電子機器を適用したものである。この図において、パーソナルコンピューター1100は、キーボード1102を備えた本体部1104と、表示部1108を備えた表示ユニット1106とにより構成され、表示ユニット1106は、本体部1104に対しヒンジ構造部を介して回動可能に支持されている。このようなパーソナルコンピューター1100には、振動デバイス1(発振器100)が内蔵されている。
次に、本発明の第4実施形態に係る電子機器について説明する。
図14に示す携帯電話機1200(PHSも含む)は、本発明の振動デバイスを備える電子機器を適用したものである。この図において、携帯電話機1200は、アンテナ(図示せず)、複数の操作ボタン1202、受話口1204および送話口1206を備え、操作ボタン1202と受話口1204との間には、表示部1208が配置されている。このような携帯電話機1200には、振動デバイス1(発振器100)が内蔵されている。
次に、本発明の第5実施形態に係る電子機器について説明する。
図15に示すデジタルスチールカメラ1300は、本発明の振動デバイスを備える電子機器を適用したものである。この図において、ケース(ボディー)1302の背面には表示部1310が設けられ、CCDによる撮像信号に基づいて表示を行う構成になっており、表示部1310は、被写体を電子画像として表示するファインダーとして機能する。また、ケース1302の正面側(図中裏面側)には、光学レンズ(撮像光学系)やCCDなどを含む受光ユニット1304が設けられている。そして、撮影者が表示部1310に表示された被写体像を確認し、シャッターボタン1306を押すと、その時点におけるCCDの撮像信号が、メモリー1308に転送・格納される。このようなデジタルスチールカメラ1300には、振動デバイス1(発振器100)が内蔵されている。
次に、本発明の第6実施形態に係る移動体について説明する。
図16に示す自動車1500は、本発明の振動デバイスを備える移動体を適用した自動車である。この図において、自動車1500には、発振器100(振動デバイス1)が内蔵されている。振動デバイス1(発振器100)は、例えば、キーレスエントリー、イモビライザー、カーナビゲーションシステム、カーエアコン、アンチロックブレーキシステム(ABS)、エアバック、タイヤ・プレッシャー・モニタリング・システム(TPMS:Tire Pressure Monitoring System)、エンジンコントロール、ハイブリッド自動車や電気自動車の電池モニター、車体姿勢制御システム等の電子制御ユニット(ECU:electronic control unit)に広く適用できる。
Claims (14)
- 第1端子を有するベースと、
前記ベースに配置され、第2端子を有する回路素子と、
前記ベースの平面視で、前記第1端子と前記第2端子との間に位置し、振動片および前記振動片を収納する振動片パッケージを備えている振動子と、
前記振動子に配置されている配線部と、
前記第1端子と前記配線部とを電気的に接続する第1ワイヤーと、
前記配線部と前記第2端子とを電気的に接続する第2ワイヤーと、を有することを特徴とする振動デバイス。 - 前記振動子は、前記ベースの平面視で、前記回路素子と重ならずに前記ベースに配置されている請求項1に記載の振動デバイス。
- 前記振動片パッケージは、前記振動片が配置されている基体と、前記基体との間に前記振動片を収納するように前記基体に接合されている蓋体と、を有し、前記蓋体を前記ベース側に向けて配置され、
前記基体の前記ベース側と反対側の面には、前記振動片と電気的に接続されている第3端子が配置されており、
前記第2端子は、複数配置されており、
複数の前記第2端子のうちの前記配線部と電気的に接続されていないものと前記第3端子とを電気的に接続する第3ワイヤーを有している請求項1または2に記載の振動デバイス。 - 前記基体は、基部と、前記基部から立設している枠状の側壁部と、を有し、
前記配線部と前記第3ワイヤーとの接続部および前記第3端子と前記第3ワイヤーとの接続部の少なくとも一方は、前記ベースの平面視で、前記側壁部と重なっている請求項3に記載の振動デバイス。 - 前記第3端子は2つ設けられ、一対の第3端子として配置されており、
前記一対の第3端子の間に前記面の中心が位置しており、
前記一対の第3端子の間に前記配線部が設けられている請求項3または4に記載の振動デバイス。 - 前記配線部は、前記振動片パッケージに配置されている基板と、前記基板に設けられている配線と、を有している請求項1ないし5のいずれか1項に記載の振動デバイス。
- 前記第1端子に電源電圧または基準電位が印加される請求項1ないし6のいずれか1項に記載の振動デバイス。
- 前記ベースの平面視で、前記ベースは、第1辺、第2辺、第3辺および第4辺を有する四角形状をなし、
前記第1辺、前記第2辺、前記第3辺および前記第4辺に沿って、前記第1端子を含む複数の端子が配置されている請求項1ないし6のいずれか1項に記載の振動デバイス。 - 前記振動子の厚さは、前記回路素子の厚さよりも大きい請求項1ないし8のいずれか1項に記載の振動デバイス。
- 前記ベースに配置され、前記回路素子および前記振動子を覆うモールド部を有している請求項1ないし9のいずれか1項に記載の振動デバイス。
- 第1端子を有するベースと、
前記第1端子と電気的に接続されている第2端子を有する回路素子と、
配線部が配置されている振動子と、を備え、
前記第1端子と前記第2端子とが前記配線部を介して電気的に接続されていることを特徴とする振動デバイス。 - 請求項1ないし11のいずれか1項に記載の振動デバイスを有することを特徴とする発振器。
- 請求項1ないし11のいずれか1項に記載の振動デバイスを有することを特徴とする電子機器。
- 請求項1ないし11のいずれか1項に記載の振動デバイスを有することを特徴とする移動体。
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