JP2018117069A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 321
- 239000000758 substrate Substances 0.000 claims description 152
- 238000002955 isolation Methods 0.000 claims description 115
- 239000012535 impurity Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 abstract description 143
- 238000000926 separation method Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 30
- 230000003071 parasitic effect Effects 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
【解決手段】HVJT13を構成するn-型拡散領域2には、ソースフォロワ構成のHVNMOS21が配置される。横型のHVNMOS21は、p型バックゲート領域31、ソースコンタクト領域36、n+型ドレイン領域34およびゲート電極35を備える。p型バックゲート領域31およびソースコンタクト領域36は、p-型分離領域4に接し、その内部のp+型共通電位領域5と離して設けられる。ソースコンタクト領域36は、ソースフォロワ抵抗RSFを介してCOM電極パッド41に電気的に接続される。p+型共通電位領域5と、HVNMOS21のp型バックゲート領域31およびソースコンタクト領域36と、は、p+型共通電位領域5とHVNMOS21のp型バックゲート領域31およびソースコンタクト領域36との間の拡散抵抗R’を介して電気的に接続される。
【選択図】図2A
Description
実施の形態1にかかる半導体装置の構造について、図1,2A,5を参照して説明する。図1は、実施の形態1にかかる半導体装置の平面レイアウトを示す平面図である。平面レイアウトとは、半導体基板(半導体チップ)10のおもて面側から見た各部の平面形状および配置構成である。図2Aは、図1の矩形枠Aにおける断面構造を示す斜視図である。図2Aには、図1の高電位側回路部のセット(set)用のレベルシフト回路を構成するHVNMOS21を示す。
次に、実施の形態2にかかる半導体装置の構造について説明する。図3は、実施の形態2にかかる半導体装置の構造を示す斜視図である。実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、p-型分離領域4にn型拡散領域(第7半導体領域)61を配置し、p+型共通電位領域5とHVNMOS21のソースコンタクト領域36との間の拡散抵抗R’を高抵抗化した点である。図示省略するが、実施の形態2においても、HVNMOS22の構成はHVNMOS21と同様である。
次に、実施の形態3にかかる半導体装置の構造について説明する。図4Aは、実施の形態3にかかる半導体装置の平面レイアウトを示す平面図である。実施の形態3にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、p-型分離領域4を共通電位COMに固定するp+型共通電位領域65を、略矩形状の平面レイアウトに配置されたp-型分離領域4の頂点付近のみに配置した点である。
次に、実施の形態4にかかる半導体装置の構造について説明する。図4Bは、実施の形態4にかかる半導体装置の平面レイアウトを示す平面図である。実施の形態4にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、次の2点である。1つ目の相違点は、HVNMOS21,22がn-型拡散領域2からn型拡散領域3にわたって設けられている点である。2つ目の相違点は、HVNMOS21,22の周囲をそれぞれ囲むようにp-型スリット領域71,72が設けられている点である。
次に、実施の形態5にかかる半導体装置の構造について説明する。図4Cは、実施の形態5にかかる半導体装置の平面レイアウトを示す平面図である。実施の形態5にかかる半導体装置は、p-型スリット領域73の配置が実施の形態4にかかる半導体装置と異なる。具体的には、p-型スリット領域73は、n-型拡散領域2に、n型拡散領域3の周囲を囲むように設けられている。
2 n-型拡散領域
3,6,61 n型拡散領域
4 p-型分離領域
5 p+型共通電位領域
10 半導体基板
11 高電位側領域
12 低電位側領域
13 HVJT
20 HVIC
21,22 HVNMOS
31 p型バックゲート領域
32 n+型ソース領域
33 p+型コンタクト領域
34 n+型ドレイン領域
35 ゲート電極
36 ソースコンタクト領域
41 COM電極パッド
50 エピタキシャル基板
51 p--型支持基板
52 n-型エピタキシャル層
53 p-型エピタキシャル層
71〜73 p-型スリット領域
101,102 HVNMOS
103,104 負荷抵抗
105,106 定電圧ダイオード
107,108 NOT回路
110 高電位側回路部
111,112 電流帰還抵抗
113,114 定電圧ダイオード
120 ブリッジ回路
121 上アームのIGBT
122 下アームのIGBT
123 上アームのIGBTと下アームのIGBTとの接続点
131 オン信号
132 オフ信号
COM 共通電位
E1 高電圧側の補助直流電源
E2 低電圧側の補助直流電源
OUT 交流出力端子
Vcc1 高電圧側の補助直流電源の正極ラインの電位(高電位側電源電位)
Vcc2 低電圧側の補助直流電源の正極ラインの電位(低電位側電源電位)
Vdc ブリッジ回路の正極側の電位(電源電位)
Claims (13)
- 第1導電型の半導体基板と、
前記半導体基板の一方の主面側に選択的に設けられた第2導電型の第1半導体領域と、
前記半導体基板と前記第1半導体領域とのpn接合で形成され、電位の異なる領域を分離する分離構造と、
前記半導体基板の一方の主面側に、前記第1半導体領域と離して選択的に設けられ、第1抵抗体を介して最低電位の電極に電気的に接続された第2導電型の第2半導体領域と、前記第1半導体領域の内部に選択的に設けられた、前記第1半導体領域よりも不純物濃度の高い第2導電型の第3半導体領域と、前記第1半導体領域と前記第2半導体領域との間の前記半導体基板に沿って設けられたゲート絶縁膜と、前記ゲート絶縁膜に沿って設けられたゲート電極と、を有し、前記最低電位を基準とした信号を、前記最低電位と異なる電位を基準とした信号に変換する半導体素子と、
前記半導体基板の一方の主面側に、所定距離で前記第2半導体領域と離して選択的に設けられ、前記最低電位の電極に電気的に接続された、前記半導体基板よりも不純物濃度の高い第1導電型の第4半導体領域と、
を備え、
前記第2半導体領域は、第2抵抗体を介して前記第4半導体領域と電気的に接続され、
前記第2抵抗体は、前記半導体基板の、前記第2半導体領域と前記第4半導体領域との間の部分で構成されていることを特徴とする半導体装置。 - 前記半導体基板の一方の主面側に選択的に設けられ、前記第1半導体領域に接する、前記半導体基板よりも不純物濃度の高い第1導電型の第5半導体領域をさらに備え、
前記分離構造は、前記第5半導体領域と前記第1半導体領域とのpn接合で形成され、
前記第2半導体領域および前記第4半導体領域は、前記第5半導体領域の内部に設けられ、
前記ゲート絶縁膜は、前記第1半導体領域と前記第2半導体領域との間の前記第5半導体領域に沿って設けられ、
前記第2抵抗体は、前記第5半導体領域の、前記第2半導体領域と前記第4半導体領域との間の部分で構成されていることを特徴とする請求項1に記載の半導体装置。 - 前記第1半導体領域の内部に選択的に設けられ、前記半導体基板の、前記第2半導体領域と前記第4半導体領域との間の部分に接する、前記半導体基板よりも不純物濃度の高い第1導電型の第6半導体領域をさらに備え、
前記第2半導体領域は、前記第6半導体領域の内部に、前記半導体基板の、前記第2半導体領域と前記第4半導体領域との間の部分に接して設けられ、
前記ゲート絶縁膜は、前記第1半導体領域と前記第2半導体領域との間の前記第6半導体領域に沿って設けられていることを特徴とする請求項1に記載の半導体装置。 - 前記第1半導体領域の内部に選択的に設けられ、前記第5半導体領域の、前記第2半導体領域と前記第4半導体領域との間の部分に接する、前記第5半導体領域よりも不純物濃度の高い第1導電型の第6半導体領域をさらに備え、
前記第2半導体領域は、前記第6半導体領域の内部に、前記第5半導体領域の、前記第2半導体領域と前記第4半導体領域との間の部分に接して設けられ、
前記ゲート絶縁膜は、前記第1半導体領域と前記第2半導体領域との間の前記第6半導体領域に沿って設けられていることを特徴とする請求項2に記載の半導体装置。 - 前記半導体基板の、前記第2半導体領域と前記第4半導体領域との間の部分に選択的に設けられた第2導電型の第7半導体領域をさらに備えることを特徴とする請求項1または3に記載の半導体装置。
- 前記半導体基板の、前記第2半導体領域と前記第4半導体領域との間の部分に選択的に設けられ、前記第6半導体領域に電気的に接続された第2導電型の第7半導体領域をさらに備えることを特徴とする請求項3に記載の半導体装置。
- 前記第5半導体領域の、前記第2半導体領域と前記第4半導体領域との間の部分に選択的に設けられた第2導電型の第7半導体領域をさらに備えることを特徴とする請求項2または4に記載の半導体装置。
- 前記第5半導体領域の、前記第2半導体領域と前記第4半導体領域との間の部分に選択的に設けられ、前記第6半導体領域に電気的に接続された第2導電型の第7半導体領域をさらに備えることを特徴とする請求項4に記載の半導体装置。
- 前記第7半導体領域の電位は、浮遊電位または電源電位であることを特徴とする請求項5または7に記載の半導体装置。
- 前記第1抵抗体は、前記第2抵抗体に並列に接続された抵抗素子であることを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
- 前記第1抵抗体の抵抗値よりも前記第2抵抗体の抵抗値の方が高いことを特徴とする請求項10に記載の半導体装置。
- 前記第1抵抗体として、前記第2抵抗体を用いることを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
- 前記半導体素子は、前記分離構造を形成するpn接合に沿って配置され、
前記第4半導体領域は、前記半導体基板の一方の主面と平行な方向で、かつ前記分離構造を形成するpn接合のうち、前記半導体素子が配置された部分のpn接合面と直交する方向に、前記第2半導体領域と対向しないことを特徴とする請求項1〜12のいずれか一つに記載の半導体装置。
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