JP2018116227A5 - - Google Patents

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Publication number
JP2018116227A5
JP2018116227A5 JP2017008619A JP2017008619A JP2018116227A5 JP 2018116227 A5 JP2018116227 A5 JP 2018116227A5 JP 2017008619 A JP2017008619 A JP 2017008619A JP 2017008619 A JP2017008619 A JP 2017008619A JP 2018116227 A5 JP2018116227 A5 JP 2018116227A5
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JP
Japan
Prior art keywords
insulating film
gate line
conductive material
layer made
display area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2017008619A
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English (en)
Japanese (ja)
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JP2018116227A (ja
JP6999272B2 (ja
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Publication date
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Priority to JP2017008619A priority Critical patent/JP6999272B2/ja
Priority claimed from JP2017008619A external-priority patent/JP6999272B2/ja
Priority to US15/874,221 priority patent/US10281783B2/en
Publication of JP2018116227A publication Critical patent/JP2018116227A/ja
Priority to US16/357,469 priority patent/US10921664B2/en
Publication of JP2018116227A5 publication Critical patent/JP2018116227A5/ja
Priority to US17/148,944 priority patent/US11719986B2/en
Application granted granted Critical
Publication of JP6999272B2 publication Critical patent/JP6999272B2/ja
Active legal-status Critical Current
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JP2017008619A 2017-01-20 2017-01-20 表示装置 Active JP6999272B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017008619A JP6999272B2 (ja) 2017-01-20 2017-01-20 表示装置
US15/874,221 US10281783B2 (en) 2017-01-20 2018-01-18 Display device
US16/357,469 US10921664B2 (en) 2017-01-20 2019-03-19 Substrate including semiconductors arranged in a matrix and a display device
US17/148,944 US11719986B2 (en) 2017-01-20 2021-01-14 Substrate including semiconductors arranged in a matrix and a display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017008619A JP6999272B2 (ja) 2017-01-20 2017-01-20 表示装置

Publications (3)

Publication Number Publication Date
JP2018116227A JP2018116227A (ja) 2018-07-26
JP2018116227A5 true JP2018116227A5 (enExample) 2020-02-27
JP6999272B2 JP6999272B2 (ja) 2022-01-18

Family

ID=62906263

Family Applications (1)

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JP2017008619A Active JP6999272B2 (ja) 2017-01-20 2017-01-20 表示装置

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US (3) US10281783B2 (enExample)
JP (1) JP6999272B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102461634B1 (ko) * 2016-05-26 2022-10-31 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 액정 표시 장치 및 그 제조방법
JP6999272B2 (ja) * 2017-01-20 2022-01-18 株式会社ジャパンディスプレイ 表示装置
JP2018116228A (ja) * 2017-01-20 2018-07-26 株式会社ジャパンディスプレイ 表示装置
US11211445B2 (en) * 2019-07-16 2021-12-28 Au Optronics Corporation Foldable display panel
JP7367414B2 (ja) * 2019-09-10 2023-10-24 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法および電子機器
CN112466948B (zh) * 2020-11-27 2024-05-28 合肥鑫晟光电科技有限公司 栅极驱动电路及其制造方法、阵列基板、显示装置
CN115132761A (zh) * 2022-07-04 2022-09-30 Tcl华星光电技术有限公司 显示面板

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Publication number Priority date Publication date Assignee Title
JPH04280226A (ja) * 1991-03-08 1992-10-06 Nec Corp 薄膜トランジスタ素子アレイおよびその駆動方法
JP3716580B2 (ja) * 1997-02-27 2005-11-16 セイコーエプソン株式会社 液晶装置及びその製造方法、並びに投写型表示装置
JPH11352521A (ja) * 1998-04-07 1999-12-24 Hitachi Ltd 液晶表示装置
TW478014B (en) * 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
US7027109B2 (en) * 2001-08-03 2006-04-11 Nec Corporation TFT array substrate and active-matrix addressing liquid-crystal display device
JP2004170910A (ja) 2002-10-31 2004-06-17 Seiko Epson Corp 電気光学装置及び電子機器
KR101240642B1 (ko) 2005-02-11 2013-03-08 삼성디스플레이 주식회사 액정 표시 장치
JP2007079367A (ja) 2005-09-16 2007-03-29 Seiko Epson Corp 電気光学装置、及びこれを備えた電子機器
JP4921997B2 (ja) * 2006-02-07 2012-04-25 三星電子株式会社 薄膜トランジスタ表示パネル及びその製造方法
KR101490472B1 (ko) * 2008-07-28 2015-02-05 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR101516050B1 (ko) 2008-08-27 2015-05-04 이데미쓰 고산 가부시키가이샤 전계 효과형 트랜지스터, 그의 제조 방법 및 스퍼터링 타겟
KR101731772B1 (ko) * 2008-11-28 2017-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치
DE112011101969B4 (de) 2010-06-11 2018-05-09 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen derselben
WO2011158427A1 (ja) * 2010-06-15 2011-12-22 シャープ株式会社 アクティブマトリクス基板
US9853164B2 (en) * 2012-10-03 2017-12-26 Sharp Kabushiki Kaisha Semiconductor device and display device
JP2015014635A (ja) * 2013-07-03 2015-01-22 株式会社ジャパンディスプレイ 液晶表示装置
JP2016134388A (ja) 2015-01-15 2016-07-25 株式会社ジャパンディスプレイ 表示装置
KR102373687B1 (ko) * 2015-05-11 2022-03-17 삼성디스플레이 주식회사 표시장치 및 이의 제조방법
US9911762B2 (en) * 2015-12-03 2018-03-06 Innolux Corporation Display device
KR102514320B1 (ko) * 2015-12-24 2023-03-27 삼성디스플레이 주식회사 표시 장치
JP6999272B2 (ja) * 2017-01-20 2022-01-18 株式会社ジャパンディスプレイ 表示装置

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