JP2018101685A5 - - Google Patents
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- Publication number
- JP2018101685A5 JP2018101685A5 JP2016246555A JP2016246555A JP2018101685A5 JP 2018101685 A5 JP2018101685 A5 JP 2018101685A5 JP 2016246555 A JP2016246555 A JP 2016246555A JP 2016246555 A JP2016246555 A JP 2016246555A JP 2018101685 A5 JP2018101685 A5 JP 2018101685A5
- Authority
- JP
- Japan
- Prior art keywords
- chip
- semiconductor
- semiconductor device
- semiconductor chip
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 81
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016246555A JP6727111B2 (ja) | 2016-12-20 | 2016-12-20 | 半導体装置及びその製造方法 |
| US15/825,622 US10340200B2 (en) | 2016-12-20 | 2017-11-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016246555A JP6727111B2 (ja) | 2016-12-20 | 2016-12-20 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018101685A JP2018101685A (ja) | 2018-06-28 |
| JP2018101685A5 true JP2018101685A5 (https=) | 2019-07-11 |
| JP6727111B2 JP6727111B2 (ja) | 2020-07-22 |
Family
ID=62556959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016246555A Active JP6727111B2 (ja) | 2016-12-20 | 2016-12-20 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10340200B2 (https=) |
| JP (1) | JP6727111B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7063224B2 (ja) * | 2018-10-09 | 2022-05-09 | 株式会社デンソー | 半導体モジュール |
| US11410961B2 (en) * | 2020-03-17 | 2022-08-09 | Micron Technology, Inc. | Methods and apparatus for temperature modification in bonding stacked microelectronic components and related substrates and assemblies |
| KR102792968B1 (ko) * | 2020-09-04 | 2025-04-11 | 에스케이하이닉스 주식회사 | 적층 반도체 칩을 포함하는 반도체 패키지 및 그 제조 방법 |
| US12176313B2 (en) | 2021-07-12 | 2024-12-24 | Samsung Electronics Co., Ltd. | Semiconductor package |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5264640B2 (ja) * | 2009-07-24 | 2013-08-14 | 新光電気工業株式会社 | 積層型半導体装置及びその製造方法 |
| JP2012004432A (ja) | 2010-06-18 | 2012-01-05 | Elpida Memory Inc | 半導体装置 |
| KR101692955B1 (ko) * | 2010-10-06 | 2017-01-05 | 삼성전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
| JP2012222038A (ja) * | 2011-04-05 | 2012-11-12 | Elpida Memory Inc | 半導体装置の製造方法 |
| JP5357241B2 (ja) * | 2011-08-10 | 2013-12-04 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR101906408B1 (ko) * | 2011-10-04 | 2018-10-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR101916225B1 (ko) * | 2012-04-09 | 2018-11-07 | 삼성전자 주식회사 | Ｔｓｖ를 구비한 반도체 칩 및 그 반도체 칩 제조방법 |
| JP2014060241A (ja) * | 2012-09-18 | 2014-04-03 | Toray Ind Inc | 半導体装置の製造方法 |
| TWI518878B (zh) * | 2012-12-18 | 2016-01-21 | 村田製作所股份有限公司 | Laminated type electronic device and manufacturing method thereof |
| KR102143518B1 (ko) * | 2013-10-16 | 2020-08-11 | 삼성전자 주식회사 | 칩 적층 반도체 패키지 및 그 제조 방법 |
| KR20150066184A (ko) * | 2013-12-06 | 2015-06-16 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
| US9269700B2 (en) * | 2014-03-31 | 2016-02-23 | Micron Technology, Inc. | Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods |
| JP2015225933A (ja) * | 2014-05-27 | 2015-12-14 | マイクロン テクノロジー， インク． | 半導体装置及びその製造方法 |
| JP2016062995A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP6276151B2 (ja) * | 2014-09-17 | 2018-02-07 | 東芝メモリ株式会社 | 半導体装置 |
| JP6032345B2 (ja) | 2015-12-07 | 2016-11-24 | 住友ベークライト株式会社 | 接着フィルム |
-
2016
- 2016-12-20 JP JP2016246555A patent/JP6727111B2/ja active Active
-
2017
- 2017-11-29 US US15/825,622 patent/US10340200B2/en active Active
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