JP2018101685A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
Description
図8〜図28は実施形態の半導体装置の製造方法を説明するための図、図29及び図30は実施形態の半導体装置を示す図である。以下、半導体装置の製造方法を説明しながら、半導体装置の構造を説明する。
次に、柱状スペーサ50を金属から形成する場合の柱状スペーサ50の形成方法について説明する。
柱状スペーサ50は熱伝導性の高い銅などの金属から形成される。高い放熱性を必要としない場合は、柱状スペーサ50を樹脂などの絶縁物から形成してもよい。
Claims (14)
- 一方の面に電極パッドを備えた第1の半導体チップと、
前記一方の面上に配置され、前記電極パッドに接続されたチップ積層体と、
前記一方の面上の前記チップ積層体が配置された領域の外に配置された柱状スペーサと
を有し、
前記チップ積層体は、
接続端子を有する第2の半導体チップが前記接続端子を介して複数積層されると共に、最下層の前記第2の半導体チップが前記接続端子を介して前記電極パッドに接続され、
前記第1の半導体チップと前記第2の半導体チップとの間、及び前記第2の半導体チップ同士の間に前記接続端子を覆うように充填されたアンダーフィル樹脂を有することを特徴とする半導体装置。 - 前記アンダーフィル樹脂の外縁部が前記柱状スペーサに接していることを特徴とする請求項1に記載の半導体装置。
- 前記柱状スペーサは、金属から形成されることを特徴とする請求項1又は2に記載の半導体装置。
- 前記柱状スペーサは、前記第2の半導体チップを取り囲むように分割されて配置されていることを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記第2の半導体チップは平面視で四角形で形成され、前記第2の半導体チップの四隅の外側には前記柱状スペーサが配置されていないことを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。
- 前記第2の半導体チップは、貫通電極と、前記貫通電極に上面に接続された電極パッドと備え、前記接続端子が前記貫通電極の下面に接続されており、
前記チップ積層体では、上側の前記第2の半導体チップの接続端子が下側の前記第2の半導体チップの電極パッドに接続されていることを特徴とする請求項1乃至5のいずれか一項に記載の半導体装置。 - 前記一方の面上に形成され、前記チップ積層体と前記柱状スペーサとを覆うモールド樹脂を有し、
前記チップ積層体の上面と前記柱状スぺーサの上面とが前記モールド樹脂から露出していることを特徴とする請求項1乃至6のいずれか一項に記載の半導体装置。 - 複数のチップ領域が区画され、前記チップ領域に第1電極パッドを備えた半導体デバイスウェハと、
下面側に接続端子と前記接続端子を埋設する樹脂層とを備えた半導体チップと
を用意する工程と、
前記半導体デバイスウェハの複数のチップ領域の周縁部に柱状スペーサをそれぞれ形成する工程と、
前記半導体デバイスウェハの複数のチップ領域に、前記半導体チップの樹脂層を仮接着して複数の前記半導体チップを積層することにより、前記柱状スペーサの内側にチップ積層体をそれぞれ配置する工程と、
前記複数のチップ領域のチップ積層体を、前記柱状スペーサをストッパにして加熱ツールで押圧した状態でリフロー加熱することにより、前記半導体デバイスウェハの第1電極パッドと前記半導体チップ、及び前記チップ積層体の半導体チップ同士を前記接続端子で接続すると共に、
前記半導体チップの樹脂層からアンダーフィル樹脂を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記アンダーフィル樹脂を形成する工程において、
前記アンダーフィル樹脂が前記半導体チップの外側に流動して前記柱状スペーサに接することを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記柱状スペーサを形成する工程において、
前記柱状スペーサは、金属から形成されることを特徴とする請求項8又は9に記載の半導体装置の製造方法。 - 前記柱状スペーサを形成する工程において、
前記半導体デバイスウェハのチップ領域の中央部を取り囲むように分割されて配置されることを特徴とする請求項8乃至10のいずれか一項に記載の半導体装置の製造方法。 - 前記半導体チップは平面視で四角形で形成され、
前記柱状スペーサを形成する工程において、
前記半導体チップの四隅の外側に前記柱状スペーサを配置しないことを特徴とする請求項8乃至11のいずれか一項に記載の半導体装置の製造方法。 - 前記半導体デバイスウェハと、前記半導体チップとを用意する工程において、
前記半導体チップは、貫通電極と、前記貫通電極の上面に接続された第2電極パッドとを備え、前記接続端子は前記貫通電極の下面に接続されており、
前記半導体デバイスウェハと前記半導体チップ、及び前記チップ積層体内の半導体チップ同士を電気的に接続する工程において、
前記チップ積層体内の上側の前記半導体ウェハの接続端子を下側の半導体チップの第2電極パッドに接続することを特徴とする請求項8乃至12のいずれか一項に記載の半導体装置の製造方法。 - 前記半導体デバイスウェハと前記半導体チップ、及び前記チップ積層体内の半導体チップ同士を電気的に接続する工程において、
前記半導体デバイスウェハ内を任意の数の前記チップ領域からなるユニット領域に分割して区画し、前記ユニット領域ごとに分けて前記加熱ツールでリフロー加熱することを特徴とする請求項8乃至13のいずれか一項に記載の半導体装置の製造方法。
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