JP2018092895A - 異方性導電フィルム - Google Patents
異方性導電フィルム Download PDFInfo
- Publication number
- JP2018092895A JP2018092895A JP2017160655A JP2017160655A JP2018092895A JP 2018092895 A JP2018092895 A JP 2018092895A JP 2017160655 A JP2017160655 A JP 2017160655A JP 2017160655 A JP2017160655 A JP 2017160655A JP 2018092895 A JP2018092895 A JP 2018092895A
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- JP
- Japan
- Prior art keywords
- conductive particles
- hardness
- resin layer
- insulating resin
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012789 electroconductive film Substances 0.000 title abstract 3
- 239000002245 particle Substances 0.000 claims abstract description 587
- 229920005989 resin Polymers 0.000 claims abstract description 273
- 239000011347 resin Substances 0.000 claims abstract description 273
- 238000007906 compression Methods 0.000 claims description 40
- 230000006835 compression Effects 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 4
- 238000012790 confirmation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 249
- 238000007373 indentation Methods 0.000 description 34
- 235000019589 hardness Nutrition 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 26
- 238000011156 evaluation Methods 0.000 description 24
- 238000003825 pressing Methods 0.000 description 24
- 239000006185 dispersion Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000011342 resin composition Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 10
- 239000003505 polymerization initiator Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229920002799 BoPET Polymers 0.000 description 6
- -1 acrylate compound Chemical class 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000000016 photochemical curing Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 238000010538 cationic polymerization reaction Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000012719 thermal polymerization Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 125000002091 cationic group Chemical group 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000007771 core particle Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/59—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures
- H01R12/61—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures connecting to flexible printed circuits, flat or ribbon cables or like structures
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract
Description
図1Aは、本発明の一実施例の異方性導電フィルム10Aについて、導電粒子1A、1Bの配置を説明する平面図である。また、図1Bは、異方性導電フィルム10Aのx−x断面図である。
導電粒子分散層3には、導電粒子として、高硬度導電粒子1Aと低硬度導電粒子1Bの双方が存在する。このうち、高硬度導電粒子1Aは、20%圧縮弾性率が8000〜28000N/mm2である。
20%圧縮弾性率(K)(N/mm2 )=(3/21/2)・F・S-3/2・R-1/2
により算出されるK値を使用することができる。
式中、
F:導電粒子が20%圧縮変形したときの荷重値(N)
S:導電粒子が20%圧縮変形したときの圧縮変位(mm)
R:導電粒子の半径(mm)
である。
低硬度導電粒子1Bの個数密度は、導電粒子全体の10%以上とし、接続する端子の種類や接続条件で適宜調整できる。一例として、好ましくは20%以上80%以下であり、より好ましくは30%以上70%以下である。導電粒子全体に対する低硬度導電粒子の個数密度が低すぎても高すぎても、高硬度導電粒子と低硬度導電粒子とを混合することによる本発明の効果を得られにくい。
面積占有率
=[平面視における導電粒子の個数密度(個/mm2)]×[導電粒子1個の平面視面積の平均(mm2/個)]×100
本発明の異方性導電フィルムにおいて、高硬度導電粒子1A及び低硬度導電粒子1Bを含む導電粒子全体の、フィルムの平面視における配置は、規則的配置でもランダムでもよい。規則的配置の態様としては、図1Aに示した正方格子の他、6方格子、斜方格子、長方格子等の格子配列を挙げることができる。また、導電粒子全体の粒子配置として、導電粒子1A又は1Bが所定間隔で直線状に並んだ粒子列を所定の間隔で並列させてもよい。本発明において規則的な配置は、フィルムの長手方向で繰り返されるものであれば特に制限はない。
(絶縁性樹脂層の粘度)
本発明の異方性導電フィルムにおいて、絶縁性樹脂層2の最低溶融粘度は、特に制限はなく、異方性導電フィルムの使用対象や、異方性導電フィルムの製造方法等に応じて適宜定めることができる。例えば、後述の凹み2b(図4)、2c(図5)を形成できる限り、異方性導電フィルムの製造方法によっては1000Pa・s程度とすることもできる。一方、異方性導電フィルムの製造方法として、導電粒子を絶縁性樹脂層の表面に所定の配置で保持させ、その導電粒子を絶縁性樹脂層に押し込む方法を行うとき、絶縁性樹脂層がフィルム成形を可能とする点から絶縁性樹脂の最低溶融粘度を1100Pa・s以上とすることが好ましい。
図4、5に示すような異方性導電フィルムの 「凹み」2b、2cは、「傾斜」または「起伏」という観点から説明することもできる。以下に、図面(図8〜15)を参照しながら説明する。
「傾斜」もしくは「起伏」という観点を考慮した場合の絶縁性樹脂層2の厚さ方向における導電粒子1A、1Bの位置は、前述と同様に、導電粒子1A、1Bが絶縁性樹脂層2から露出していてもよく、露出することなく、絶縁性樹脂層2内に埋め込まれていても良いが、隣接する導電粒子間の中央部における接平面2pからの導電粒子の最深部の距離(以下、埋込量という)Lbと、導電粒子径Dとの比(Lb/D)(以下、埋込率という)が30%以上105%以下であることが好ましい。
埋込率(Lb/D)30%以上60%未満の導電粒子1A、1Bのより具体的な埋込態様としては、まず、図8に示した異方性導電フィルム100Aのように、導電粒子1A、1Bが絶縁性樹脂層2から露出するように埋込率30%以上60%未満で埋め込まれた態様をあげることができる。この異方性導電フィルム100Aは、絶縁性樹脂層2の表面のうち該絶縁性樹脂層2から露出している導電粒子1A、1Bと接している部分及びその近傍が、隣接する導電粒子間の中央部の絶縁性樹脂層の表面2aにおける接平面2pに対して導電粒子の外形に概ね沿った稜線となる傾斜2bを有している。
埋込率(Lb/D)60%以上100%未満の導電粒子1A、1Bのより具体的な埋込態様としては、まず、図8に示した異方性導電フィルム100Aのように、導電粒子1A、1Bが絶縁性樹脂層2から露出するように埋込率60%以上100%未満で埋め込まれた態様をあげることができる。この異方性導電フィルム100Aは、絶縁性樹脂層2の表面のうち該絶縁性樹脂層2から露出している導電粒子1A、1Bと接している部分及びその近傍が、隣接する導電粒子間の中央部の絶縁性樹脂層の表面2aにおける接平面2pに対して導電粒子の外形に概ね沿った稜線となる傾斜2bを有している。
次に、本発明の異方性導電フィルムのうち、埋込率(Lb/D)100%の態様としては、図9に示す異方性導電フィルム100Bのように、導電粒子1A、1Bの周りに図8に示した異方性導電フィルム100Aと同様の導電粒子の外形に概ね沿った稜線となる傾斜2bを有し、絶縁性樹脂層2から露出している導電粒子1A、1Bの露出径Lcが導電粒子径Dよりも小さいもの、図10Aに示す異方性導電フィルム100Cのように、導電粒子1A、1Bの露出部分の周りの傾斜2bが導電粒子1A、1Bの近傍で急激に現れ、導電粒子1A、1Bの露出径Lcと導電粒子径Dとが略等しいもの、図11に示す異方性導電フィルム100Dのように、絶縁性樹脂層2の表面に浅い起伏2cがあり、導電粒子1A、1Bがその頂部1aの1点で絶縁性樹脂層2から露出しているものをあげることができる。
本発明の異方性導電フィルムのうち、埋込率100%を超える場合、図12に示す異方性導電フィルム100Eのように導電粒子1A、1Bが露出し、その露出部分の周りの絶縁性樹脂層2に接平面2pに対する傾斜2bもしくは導電粒子1A、1Bの直上の絶縁性樹脂層2の表面に接平面2pに対する起伏2c(図13)があるものをあげることができる。
絶縁性樹脂層2は、硬化性樹脂組成物から形成することが好ましく、例えば、熱重合性化合物と熱重合開始剤とを含有する熱重合性組成物から形成することができる。熱重合性組成物には必要に応じて光重合開始剤を含有させてもよい。
本発明の異方性導電フィルムでは、絶縁性樹脂層2の層厚Laと導電粒子1A、1Bの粒子径Dとの比(La/D)が後述の理由から下限を0.3以上とすることができ、上限を10以下することができる。従って、その比は0.3〜10が好ましく、0.6〜8がより好ましく、0.6〜6が更に好ましい。ここで、導電粒子1A、1Bの粒子径Dは、その平均粒子径を意味する。絶縁性樹脂層2の層厚Laが大き過ぎると異方性導電接続時に導電粒子1A、1Bが樹脂流動により位置ズレしやすくなり、端子における導電粒子1A、1Bの捕捉性が低下する。この傾向はこの比(La/D)が10を超えると顕著であるため、8以下がより好ましく、6以下が更に好ましい。反対に絶縁性樹脂層2の層厚Laが小さすぎてこの比(La/D)が0.3未満となると、導電粒子1A、1Bを絶縁性樹脂層2によって所定の粒子分散状態あるいは所定の配列に維持することが困難となるので比(La/D)は0.3以上が好ましく、絶縁性樹脂層2によって所定の粒子分散状態あるいは所定の配列を確実に維持する点から0.6以上がより好ましい。また、接続する端子が高密度COGの場合、絶縁性樹脂層2の層厚Laと導電粒子1A、1Bの粒子径Dとの比(La/D)は、好ましくは0.8〜2である。
本発明の異方性導電フィルムとしては、導電粒子分散層3に、絶縁性樹脂層2を構成する樹脂よりも最低溶融粘度が低い第2の絶縁性樹脂層4を積層することができる(図6、図7)。この第2の絶縁性樹脂層4は、異方性導電接続時に電子部品のバンプ等の端子によって形成される空間を充填し、対向する電子部品同士の接着性を向上させることができる。即ち、異方性導電フィルムを用いた電子部品の低圧実装を可能とするため、及び異方性導電接続時の絶縁性樹脂層2の樹脂流動を抑制して導電粒子1A、1Bの粒子捕捉性を向上させるため、絶縁性樹脂層2の粘度を高くすると共に、導電粒子1A、1Bが位置ずれを起こさない限りで絶縁性樹脂層2の厚さは薄くすることが望ましいが、絶縁性樹脂層2の厚さを過度に薄くすると、対向する電子部品同士を接着させる樹脂量の不足を招くことから接着性の低下が懸念される。これに対し、異方性導電接続時に絶縁性樹脂層2よりも粘度が低い第2の絶縁性樹脂層4を設けることにより、電子部品同士の接着性も向上させることができ、第2の絶縁性樹脂層4の流動性が絶縁性樹脂層2よりも高いことから端子による導電粒子1A、1Bの挟持や押し込みを阻害し難くすることができる。
第2の絶縁性樹脂層4と絶縁性樹脂層2を挟んで反対側に第3の絶縁性樹脂層が設けられていてもよい。第3の絶縁性樹脂層をタック層として機能させることができる。第2の絶縁性樹脂層4と同様に、電子部品の電極やバンプによって形成される空間を充填させるために設けてもよい。
本発明の異方性導電フィルムは、例えば、絶縁性樹脂層2の表面に導電粒子1A、1Bが個々に独立した所定の規則的な配列又はランダムな分散状態で保持させ、その導電粒子1A、1Bを平板又はローラで絶縁性樹脂層2に押し込むことにより製造することができる。
本発明の異方性導電フィルムは、ICチップ、ICモジュール、FPCなどの第1電子部品と、FPC、ガラス基板、プラスチック基板、リジッド基板、セラミック基板などの第2電子部品とを異方性導電接続する際に好ましく使用することができ、特にプラスチック基板としては、高圧で圧着することにより変形やクラックが生じやすいPET基材に端子が形成されたものをあげることができる。なお、このPET基材は接着剤を介してポリイミド基材を積層したものであってもよい。これらの総厚は、一例として0.15mm以下とすることができる。本発明の異方性導電フィルムを用いてICチップやウェーハーをスタックして多層化してもよい。なお、本発明の異方性導電フィルムで接続する電子部品は、上述の電子部品に限定されるものではない。近年、多様化している種々の電子部品に使用することができる。本発明は、本発明の異方性導電フィルムを用いて電子部品同士が異方性導電接続されている接続構造体も包含する。
(1)異方性導電フィルムの製造
表1に示した配合で、導電粒子分散層を形成する絶縁性樹脂層形成用樹脂組成物、及び第2の絶縁性樹脂層形成用樹脂組成物をそれぞれ調製した。絶縁性樹脂層の最低溶融粘度は3000Pa・s以上であり、この絶縁性樹脂層の最低溶融粘度と第2の絶縁性樹脂層の最低溶融粘度の比は2以上であった。
(1)で製造した実施例及び比較例の異方性導電フィルムを接続に十分な面積で裁断したものを用いて電子部品の接続構造体を作製し、(a)捕捉効率、(b)圧痕、(c)粒子潰れ率、(d)抵抗値を次のように評価した。結果を表2に示す。
以下に示す評価用ICと、この評価用ICと端子パターンが対応するガラス基板と(Ti/Al配線)に異方性導電フィルムを介して200℃、表2に記載の加圧力で5秒間加熱加圧し、評価用接続構造体を得た。
外形 1.8×20.0mm
厚み 0.5mm
バンプ仕様 サイズ30×85μm、バンプ間距離20μm、バンプの表面材質Au
A:30%以上
B:15%以上30%未満
C:15%未満
(a)で製造した評価用接続構造体における高硬度導電粒子及び低硬度導電粒子の圧痕を金属顕微鏡により観察し、加熱加圧後の端子対5個について高硬度導電粒子及び低硬度導電粒子の圧痕(捕捉)数を画像解析ソフトWinROOF(三谷商事株式会社)を用いて、計測し、その平均を求めた。また、加熱加圧前に端子上に存在する高硬度導電粒子及び低硬度導電粒子の理論値を、[端子5個分の端子面積]×[導電粒子の個数密度]から算出しておき、計測した導電粒子の圧痕(捕捉)数の理論値に対する比率を求め、次の基準で評価した。なお、確認された圧痕は、導電粒子がランダムに配置されている分散型の異方性導電フィルムではバンプ5個の圧痕の合計が100個程度であり、後述する、導電粒子が正方格子に配列している整列型の異方性導電フィルムではバンプ5個の圧痕の合計が200個程度であった。
OK:理論値の50%以上が圧痕として認識できた場合
NG:理論値の50%未満が圧痕として認識できた場合
(a)で製造した評価用接続構造体の製造直後のもの(初期)、及び(a)で製造した評価用接続構造体を温度85℃、湿度85%RHの恒温槽に500時間おいたもの(500h)のそれぞれについて、対向する端子間の距離を圧着後の粒子径として計測し、その平均粒子径を求めた。一方、圧着前の平均粒子径も求めておき、次式により粒子潰れ率を算出し、次の基準で評価した。実用上、B評価以上が好ましい。
=([圧着前の平均粒子径]−[圧着後の平均粒子径])×100/[圧着前の平均粒子径]
A:10%以上
B:5%以上10%未満
C:5%未満
(a)で製造した評価用接続構造体の製造直後のもの(初期)、及び(a)で製造した評価用接続構造体を温度85℃、湿度85%RHの恒温槽に500時間おいたもの(500h)のそれぞれについて、導通抵抗を4端子法で測定し、次の基準で評価した。抵抗値は、実用上B評価以上が好ましい。
A:3Ω未満
B:3Ω以上5Ω未満
C:5Ω以上10Ω未満
D:10Ω以上
A:3Ω未満
B:3Ω以上5Ω未満
C:5Ω以上10Ω未満
D:10Ω以上
実施例1と同様の導電粒子を用意した。ただし、樹脂コア粒子の20%圧縮弾性率を調整することにより、高硬度導電粒子として、20%圧縮弾性率が14000N/mm2の導電粒子(平均粒子径3μm)と、低硬度導電粒子として、20%圧縮弾性率が6000N/mm2の導電粒子(平均粒子径3μm)を用意した。
実施例1と同様の導電粒子を用意した。ただし、樹脂コア粒子の20%圧縮弾性率を調整することにより、高硬度導電粒子として、20%圧縮弾性率が9000N/mm2の導電粒子(平均粒子径3μm)と、低硬度導電粒子として、20%圧縮弾性率が6000N/mm2の導電粒子(平均粒子径3μm)を用意した。
表1に示した配合で、導電粒子分散層を形成する絶縁性樹脂層形成用樹脂組成物を調製し、これをバーコータ−でフィルム厚さ50μmのPETフィルム上に塗布し、80℃のオーブンにて5分間乾燥させ、PETフィルム上に絶縁性樹脂層を形成した。この絶縁性樹脂層の厚さは6μmであった。また、表1に示した配合で第2の絶縁性樹脂層形成用樹脂組成物を調製し、同様にして厚さ12μmの樹脂層を形成した。
実施例5と同様の20%圧縮弾性率が14000N/mm2の高硬度導電粒子と、20%圧縮弾性率が6000N/mm2の低硬度導電粒子を用意した。
実施例9と同様の20%圧縮弾性率が9000N/mm2の高硬度導電粒子と、20%圧縮弾性率が6000N/mm2の低硬度導電粒子を用意した。
1B 低硬度導電粒子
2 絶縁性樹脂層
2b、2c 凹み
3 導電粒子分散層
4 第2の絶縁性樹脂層
10A、10B、10C、10D、10E、10F、10G 異方性導電フィルム
Claims (12)
- 絶縁性樹脂層に、導電粒子として、20%圧縮弾性率が8000〜28000N/mm2の高硬度導電粒子と、該高硬度導電粒子よりも20%圧縮弾性率が低い低硬度導電粒子が分散している異方性導電フィルムであって、導電粒子全体の個数密度が6000個/mm2以上であり、低硬度導電粒子の個数密度が導電粒子全体の10%以上である異方性導電フィルム。
- 低硬度導電粒子の20%圧縮弾性率が、高硬度導電粒子の20%圧縮弾性率の10%以上70%以下である請求項1記載の異方性導電フィルム。
- 低硬度導電粒子の個数密度が導電粒子全体の20%以上80%以下である請求項1又は2記載の異方性導電フィルム。
- 導電粒子全体の平均粒子径が10μm未満で、導電粒子全体の個数密度が6000個/mm2以上42000個/mm2以下である請求項1〜3のいずれかに記載の異方性導電フィルム。
- 導電粒子全体の平均粒子径が10μm以上で、導電粒子全体の個数密度が20個/mm2以上2000個/mm2以下である請求項1〜3のいずれかに記載の異方性導電フィルム。
- 高硬度導電粒子と低硬度導電粒子を含む導電粒子が平面視で規則的に配置されており、フィルム厚方向の位置が揃っている請求項1〜5のいずれかに記載の異方性導電フィルム。
- 高硬度導電粒子と低硬度導電粒子を含む導電粒子同士が違いに非接触で存在する個数割合が95%以上である請求項6記載の異方性導電フィルム。
- 高硬度導電粒子と低硬度導電粒子がランダムに混合している請求項1〜5のいずれかに記載の異方性導電フィルム。
- 高硬度導電粒子及び低硬度導電粒子の近傍の絶縁性樹脂層の表面が、隣接する導電粒子間の中央部における絶縁性樹脂層の接平面に対して傾斜又は起伏を有する請求項1〜8のいずれかに記載の異方性導電フィルム。
- 前記傾斜では、高硬度導電粒子及び低硬度導電粒子の周りの絶縁性樹脂層の表面が、前記接平面に対して欠けており、前記起伏では、高硬度導電粒子及び低硬度導電粒子の直上の絶縁性樹脂層の樹脂量が、前記高硬度導電粒子及び低硬度導電粒子の直上の絶縁性樹脂層の表面が該接平面にあるとしたときに比して少ない請求項9記載の異方性導電フィルム。
- 請求項1〜10のいずれかに記載の異方性導電フィルムで第1の電子部品と第2の電子部品が異方性導電接続されている接続構造体。
- 第1の電子部品においてPET基材に端子が形成されている請求項11記載の接続構造体。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2017/041684 WO2018101106A1 (ja) | 2016-12-01 | 2017-11-20 | 異方性導電フィルム |
KR1020197014344A KR102250339B1 (ko) | 2016-12-01 | 2017-11-20 | 이방성 도전 필름 |
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US16/464,854 US10985128B2 (en) | 2016-12-01 | 2017-11-20 | Anisotropic conductive film |
CN201780071308.7A CN109983629B (zh) | 2016-12-01 | 2017-11-20 | 各向异性导电膜 |
TW106142174A TWI760393B (zh) | 2016-12-01 | 2017-12-01 | 異向性導電膜、連接構造體及連接構造體之製造方法 |
TW111109675A TWI806494B (zh) | 2016-12-01 | 2017-12-01 | 異向性導電膜、連接構造體、連接構造體之製造方法及捲裝體 |
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JP2020095922A (ja) * | 2018-12-14 | 2020-06-18 | デクセリアルズ株式会社 | 異方性導電フィルム |
CN112562886A (zh) * | 2019-09-10 | 2021-03-26 | 南昌欧菲生物识别技术有限公司 | 异方性导电膜及其制备方法、邦定结构和超声波生物识别装置 |
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US20190304943A1 (en) | 2019-10-03 |
US10985128B2 (en) | 2021-04-20 |
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