JP2018085487A - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置 Download PDF

Info

Publication number
JP2018085487A
JP2018085487A JP2016229239A JP2016229239A JP2018085487A JP 2018085487 A JP2018085487 A JP 2018085487A JP 2016229239 A JP2016229239 A JP 2016229239A JP 2016229239 A JP2016229239 A JP 2016229239A JP 2018085487 A JP2018085487 A JP 2018085487A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode layer
resin
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016229239A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018085487A5 (enrdf_load_stackoverflow
Inventor
佑也 五郎丸
Yuya Goromaru
佑也 五郎丸
木村 浩
Hiroshi Kimura
浩 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Torex Semiconductor Ltd
Maxell Ltd
Original Assignee
Maxell Holdings Ltd
Torex Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxell Holdings Ltd, Torex Semiconductor Ltd filed Critical Maxell Holdings Ltd
Priority to JP2016229239A priority Critical patent/JP2018085487A/ja
Publication of JP2018085487A publication Critical patent/JP2018085487A/ja
Publication of JP2018085487A5 publication Critical patent/JP2018085487A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
JP2016229239A 2016-11-25 2016-11-25 半導体装置の製造方法および半導体装置 Pending JP2018085487A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016229239A JP2018085487A (ja) 2016-11-25 2016-11-25 半導体装置の製造方法および半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016229239A JP2018085487A (ja) 2016-11-25 2016-11-25 半導体装置の製造方法および半導体装置

Publications (2)

Publication Number Publication Date
JP2018085487A true JP2018085487A (ja) 2018-05-31
JP2018085487A5 JP2018085487A5 (enrdf_load_stackoverflow) 2019-11-28

Family

ID=62237392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016229239A Pending JP2018085487A (ja) 2016-11-25 2016-11-25 半導体装置の製造方法および半導体装置

Country Status (1)

Country Link
JP (1) JP2018085487A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020027850A (ja) * 2018-08-10 2020-02-20 ローム株式会社 半導体装置および半導体装置の製造方法
JP2023045460A (ja) * 2021-09-22 2023-04-03 ローム株式会社 半導体装置および半導体装置の製造方法
WO2023112677A1 (ja) * 2021-12-13 2023-06-22 ローム株式会社 半導体装置および半導体装置の製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098205A (ja) * 1995-06-14 1997-01-10 Dainippon Printing Co Ltd 樹脂封止型半導体装置
JP2002009196A (ja) * 2000-06-20 2002-01-11 Kyushu Hitachi Maxell Ltd 半導体装置の製造方法
JP2002289739A (ja) * 2001-03-23 2002-10-04 Dainippon Printing Co Ltd 樹脂封止型半導体装置および半導体装置用回路部材とその製造方法
JP2009200175A (ja) * 2008-02-20 2009-09-03 Mitsumi Electric Co Ltd 半導体装置及びその製造方法
EP2361000A1 (en) * 2010-02-11 2011-08-24 Nxp B.V. Leadless chip package mounting method and carrier
JP2011205153A (ja) * 2011-07-20 2011-10-13 Dainippon Printing Co Ltd 樹脂封止型半導体装置および半導体装置用回路部材
JP2013235999A (ja) * 2012-05-10 2013-11-21 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2015073120A (ja) * 2009-09-29 2015-04-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2015145651A1 (ja) * 2014-03-27 2015-10-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016127261A (ja) * 2014-12-27 2016-07-11 日立マクセル株式会社 半導体装置用基板、半導体装置用基板の製造方法、及び半導体装置
JP2017175131A (ja) * 2016-03-17 2017-09-28 ローム株式会社 半導体装置およびその製造方法
JP2017228559A (ja) * 2016-06-20 2017-12-28 ローム株式会社 半導体装置およびその製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098205A (ja) * 1995-06-14 1997-01-10 Dainippon Printing Co Ltd 樹脂封止型半導体装置
JP2002009196A (ja) * 2000-06-20 2002-01-11 Kyushu Hitachi Maxell Ltd 半導体装置の製造方法
JP2002289739A (ja) * 2001-03-23 2002-10-04 Dainippon Printing Co Ltd 樹脂封止型半導体装置および半導体装置用回路部材とその製造方法
JP2009200175A (ja) * 2008-02-20 2009-09-03 Mitsumi Electric Co Ltd 半導体装置及びその製造方法
JP2015073120A (ja) * 2009-09-29 2015-04-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
EP2361000A1 (en) * 2010-02-11 2011-08-24 Nxp B.V. Leadless chip package mounting method and carrier
JP2011205153A (ja) * 2011-07-20 2011-10-13 Dainippon Printing Co Ltd 樹脂封止型半導体装置および半導体装置用回路部材
JP2013235999A (ja) * 2012-05-10 2013-11-21 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
WO2015145651A1 (ja) * 2014-03-27 2015-10-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016127261A (ja) * 2014-12-27 2016-07-11 日立マクセル株式会社 半導体装置用基板、半導体装置用基板の製造方法、及び半導体装置
JP2017175131A (ja) * 2016-03-17 2017-09-28 ローム株式会社 半導体装置およびその製造方法
JP2017228559A (ja) * 2016-06-20 2017-12-28 ローム株式会社 半導体装置およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020027850A (ja) * 2018-08-10 2020-02-20 ローム株式会社 半導体装置および半導体装置の製造方法
JP7179526B2 (ja) 2018-08-10 2022-11-29 ローム株式会社 半導体装置および半導体装置の製造方法
JP2023045460A (ja) * 2021-09-22 2023-04-03 ローム株式会社 半導体装置および半導体装置の製造方法
WO2023112677A1 (ja) * 2021-12-13 2023-06-22 ローム株式会社 半導体装置および半導体装置の製造方法

Similar Documents

Publication Publication Date Title
TWI587457B (zh) 樹脂密封型半導體裝置及其製造方法
US10930581B2 (en) Semiconductor package with wettable flank
KR102178587B1 (ko) 반도체 장치의 제조 방법 및 반도체 장치
KR102227588B1 (ko) 반도체 장치 및 그 제조 방법
KR102082941B1 (ko) 수지 봉지형 반도체 장치 및 그 제조 방법
US8076181B1 (en) Lead plating technique for singulated IC packages
CN105185752B (zh) 半导体器件及其制造方法
CN100440499C (zh) 半导体器件及其制造方法
US20160276251A1 (en) Lead Frames With Wettable Flanks
JP2001189410A (ja) 半導体装置およびその製造方法
JP7144157B2 (ja) 半導体装置およびその製造方法
JP2016119366A (ja) リードフレーム、半導体装置
JP6752639B2 (ja) 半導体装置の製造方法
JP2021125611A (ja) リードフレーム、半導体装置及びリードフレームの製造方法
JP2014007287A (ja) 半導体装置の製造方法
JP2018085487A (ja) 半導体装置の製造方法および半導体装置
WO2015015850A1 (ja) モジュールおよびその製造方法
JPWO2020166512A1 (ja) 半導体装置、および、半導体装置の製造方法
JP4387566B2 (ja) 樹脂封止型半導体装置
JP2018085487A5 (enrdf_load_stackoverflow)
JP2001077268A (ja) 樹脂封止型半導体装置およびその製造方法
JP6867671B2 (ja) 半導体装置の製造方法および半導体装置
JP7075571B2 (ja) 半導体装置の製造方法および半導体装置用基板
JP2008108967A (ja) リードフレームおよびそれを用いた半導体パッケージの製造方法
JP6889531B2 (ja) 半導体装置用基板およびその製造方法、半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191012

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191012

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200918

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201020

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20201213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210810

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220222