JP2018078612A - ブースト変換器により駆動される無線周波数電力増幅器 - Google Patents
ブースト変換器により駆動される無線周波数電力増幅器 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Abstract
Description
本願は、2015年2月15日出願の「ブースト変換器により駆動される無線周波数電力増幅器」との名称の米国仮出願第62/116,452号の優先権を主張する。その開示は全体が、ここに明示的に参照として組み入れられる。
Claims (25)
- 電力増幅システムであって、
電池電圧に基づいて高電圧(HV)供給信号を発生させるべく構成された供給システムと、
前記HV供給信号を受信して無線周波数(RF)信号を増幅するべく構成された電力増幅器(PA)と、
増幅されたRF信号をフィルタへと引き回すべく構成された出力経路と
を含む電力増幅システム。 - 前記出力経路にはインピーダンス変換回路が実質的に存在しない請求項1の電力増幅システム。
- 前記電力増幅システムは、平均電力追跡(APT)システムとして動作するべく構成される請求項2の電力増幅システム。
- 前記供給システムは、前記電池電圧に基づいて前記HV供給信号を発生させるべく構成されたブーストDC/DC変換器を含む請求項3の電力増幅システム。
- 前記HV供給信号は、前記出力経路に前記インピーダンス変換回路が実質的に存在しないことを許容する程度に十分、前記PA及び前記フィルタのインピーダンスが整合するように選択される請求項3の電力増幅システム。
- 前記PAのインピーダンスは、ほぼ40オームよりも大きな値を有する請求項5の電力増幅システム。
- 前記PAのインピーダンスは、ほぼ50オームの値を有する請求項6の電力増幅システム。
- 前記PAはヘテロ接合バイポーラトランジスタ(HBT)を含む請求項3の電力増幅システム。
- 前記HBTはガリウムヒ素(GaAs)デバイスである請求項8の電力増幅システム。
- 前記HV供給信号は、前記HBTのコレクタにVCCとして与えられる請求項8の電力増幅システム。
- 前記フィルタは、対応送信(Tx)周波数帯域で動作するべく構成されたTxフィルタである請求項3の電力増幅システム。
- 前記Txフィルタは、前記Tx周波数帯域及び対応受信(Rx)周波数帯域で動作するべく構成されたデュプレクサの一部である請求項11の電力増幅システム。
- それぞれが前記HV供給信号を受信してRF信号を増幅するべく構成された一以上の付加PAをさらに含む請求項3の電力増幅システム。
- それぞれが対応付加PAの増幅されたRF信号を受信して対応フィルタへと引き回すべく構成された一以上の出力経路をさらに含み、
付加的な出力経路にはインピーダンス変換回路が実質的に存在しない請求項13の電力増幅システム。 - 各フィルタが対応PAに関連付けられる請求項14の電力増幅システム。
- 前記電力増幅システムは、前記PA及び前記フィルタ間に帯域選択スイッチが実質的に存在しない請求項15の電力増幅システム。
- 前記電力増幅システムは、類似帯域の取り扱い能力を有するがPAは低電圧で動作する他の電力増幅器システムよりも低い損失を有する請求項16の電力増幅システム。
- 前記電力増幅システムは平均電力追跡(APT)システムを含み、
前記他の電力増幅器システムは包絡線追跡(ET)システムを含む請求項17の電力増幅システム。 - 前記APTシステムは、前記ETシステムの全体効率よりも高い全体効率を有する請求項18の電力増幅システム。
- 無線周波数(RF)モジュールであって、
複数のコンポーネントを受容するべく構成されたパッケージング基板と、
前記パッケージング基板に実装される電力増幅システムと
を含み、
前記電力増幅システムは、電池電圧に基づいて高電圧(HV)供給信号を与えるべく構成された供給システムを含み、
前記電力増幅システムはさらに複数の電力増幅器(PA)を含み、
各PAは、前記HV供給信号を受信して無線周波数(RF)信号を増幅するべく構成され、
前記電力増幅システムはさらに、増幅されたRF信号を対応PAから対応フィルタへと引き回すべく構成された出力経路を含むRFモジュール。 - 前記複数のPAのそれぞれはさらに、前記対応出力フィルタのほぼ特性負荷インピーダンスで駆動するべく構成される請求項20のRFモジュール。
- 各出力経路は、前記対応PA及び出力フィルタ間においてインピーダンス変換回路が実質的に存在しない請求項21のRFモジュール。
- 前記電力増幅システムは、前記複数のPA及びその対応出力フィルタ間に帯域選択スイッチが実質的に存在しない請求項21のRFモジュール。
- 前記RFモジュールはフロントエンドモジュール(FEM)である請求項21のRFモジュール。
- 無線デバイスであって、
無線周波数(RF)信号を発生させるべく構成された送受信器と、
前記送受信器と通信するフロントエンドモジュール(FEM)と、
前記FEMと通信するアンテナと
を含み、
前記FEMは、複数のコンポーネントを受容するべく構成されたパッケージング基板を含み、
前記FEMはさらに、前記パッケージング基板に実装された電力増幅システムを含み、
前記電力増幅システムは、電池電圧に基づいて高電圧(HV)供給信号を与えるべく構成された供給システムを含み、
前記電力増幅システムはさらに複数の電力増幅器(PA)を含み、
各PAは、前記HV供給信号を受信して無線周波数(RF)信号を増幅するべく構成され、
前記電力増幅システムはさらに、増幅されたRF信号を対応PAから対応フィルタへと引き回すべく構成された出力経路を含み、
前記アンテナは前記増幅されたRF信号を送信するべく構成される無線デバイス。
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US201562116452P | 2015-02-15 | 2015-02-15 | |
US62/116,452 | 2015-02-15 |
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JP2015192593A Division JP6595282B2 (ja) | 2015-02-15 | 2015-09-30 | ブースト変換器により駆動される無線周波数電力増幅器 |
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JP2017241919A Pending JP2018078612A (ja) | 2015-02-15 | 2017-12-18 | ブースト変換器により駆動される無線周波数電力増幅器 |
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KR101730258B1 (ko) | 2017-04-26 |
US20160241208A1 (en) | 2016-08-18 |
US20190326864A1 (en) | 2019-10-24 |
DE102015218916A1 (de) | 2016-08-18 |
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US10277174B2 (en) | 2019-04-30 |
JP6595282B2 (ja) | 2019-10-23 |
US20180241360A1 (en) | 2018-08-23 |
DE102015218916B4 (de) | 2022-03-31 |
US9893684B2 (en) | 2018-02-13 |
TW201630338A (zh) | 2016-08-16 |
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