JP2018067414A - 電子デバイス用基板のマザー基板 - Google Patents
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/875—Arrangements for extracting light from the devices
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- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
1a 第1面
1b 第2面
2 凹凸層(凹凸構造部)
2’ 凹凸構造部
3 透光性被覆層
5 透光性電極(第1電極)
6 有機層
7 反射性電極(第2電極)
A 第1の実施形態に係る電子デバイス用基板のマザー基板
A’ 切断によりマザー基板Aから得られた電子デバイス用基板
B 第2の実施形態に係る電子デバイス用基板のマザー基板
B’ 切断によりマザー基板Bから得られた電子デバイス用基板
C 有機EL素子
Claims (7)
- 相対向する第1表面と第2表面を有する透光性基板と、前記透光性基板の前記第1表面に設けられた凹凸状構造部と、前記透光性基板の屈折率よりも高い屈折率を有し、前記第1表面及び前記凹凸状構造部を覆う透光性被覆層とを備え、
前記透光性被覆層の外周端が、前記透光性基板の外周端と同じ位置、または、前記透光性基板の外周端よりも内周側の位置に在り、前記凹凸状構造部の外周端が、前記透光性被覆層の外周端よりも内周側の位置に在ることを特徴とする電子デバイス用基板のマザー基板。 - 前記透光性被覆層の外周端が、前記透光性基板の外周端よりも内周側の位置に在ることを特徴とする請求項1に記載の電子デバイス用基板のマザー基板。
- 前記透光性被覆層の波長588nmにおける屈折率ndが1.8〜2.1であることを特徴とする請求項1又は2に記載の電子デバイス用基板のマザー基板。
- 前記凹凸状構造部は、前記透光性基板の前記第1表面に形成された凹凸層であることを特徴とする請求項1から3の何れか1項に記載の電子デバイス用基板のマザー基板。
- 前記凹凸層の屈折率は、前記透光性被覆層の屈折率よりも低いことを特徴とする請求項4に記載の電子デバイス用基板のマザー基板。
- 前記透光性基板の前記第1表面が粗面であり、前記凹凸状構造部は、前記第1表面の表面形状によって構成されることを特徴とする請求項1から3の何れか1項に記載の電子デバイス用基板のマザー基板。
- 請求項1から6の何れか1項に記載のマザー基板から得られた電子デバイス用基板と、前記電子デバイス用基板の前記透光性被覆層の表面に形成された第1電極としての透光性電極と、前記透光性電極上に形成された発光機能を有する有機層と、前記有機層上に形成された第2電極とを備えた有機EL素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016204331A JP2018067414A (ja) | 2016-10-18 | 2016-10-18 | 電子デバイス用基板のマザー基板 |
KR1020187032428A KR20190060954A (ko) | 2016-10-18 | 2017-07-27 | 전자 디바이스용 기판의 마더 기판 |
CN201780034931.5A CN109315033A (zh) | 2016-10-18 | 2017-07-27 | 电子器件用基板的母基板 |
US16/339,395 US20190237698A1 (en) | 2016-10-18 | 2017-07-27 | Mother substrate for substrate for electronic device |
PCT/JP2017/027164 WO2018074026A1 (ja) | 2016-10-18 | 2017-07-27 | 電子デバイス用基板のマザー基板 |
Applications Claiming Priority (1)
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JP2016204331A JP2018067414A (ja) | 2016-10-18 | 2016-10-18 | 電子デバイス用基板のマザー基板 |
Publications (1)
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JP2018067414A true JP2018067414A (ja) | 2018-04-26 |
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JP2016204331A Pending JP2018067414A (ja) | 2016-10-18 | 2016-10-18 | 電子デバイス用基板のマザー基板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190237698A1 (ja) |
JP (1) | JP2018067414A (ja) |
KR (1) | KR20190060954A (ja) |
CN (1) | CN109315033A (ja) |
WO (1) | WO2018074026A1 (ja) |
Citations (4)
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JP2010198797A (ja) * | 2009-02-23 | 2010-09-09 | Nippon Electric Glass Co Ltd | 有機el素子用ガラス基板及びその製造方法 |
JP2011017889A (ja) * | 2009-07-09 | 2011-01-27 | Seiko Epson Corp | 電子機器の製造方法 |
JP2011228262A (ja) * | 2010-01-19 | 2011-11-10 | Panasonic Electric Works Co Ltd | 面状発光装置 |
WO2013136771A1 (ja) * | 2012-03-12 | 2013-09-19 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子 |
Family Cites Families (9)
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US9601719B2 (en) * | 2011-08-31 | 2017-03-21 | Oledworks Gmbh | Light source having an outsource device |
JP6241757B2 (ja) * | 2012-10-11 | 2017-12-06 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
US20150011031A1 (en) * | 2013-07-02 | 2015-01-08 | Electronics And Telecomunications Research Institute | Method of manufacturing organic light emitting diode |
KR101484088B1 (ko) * | 2013-07-16 | 2015-01-21 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
TWI593139B (zh) * | 2013-08-30 | 2017-07-21 | Asahi Kasei E-Materials Corp | Semiconductor light-emitting element and optical film |
KR101493612B1 (ko) * | 2013-10-08 | 2015-02-13 | 쌩-고벵 글래스 프랑스 | 발광 디바이스용 적층체 및 그의 제조 방법 |
US9246134B2 (en) * | 2014-01-20 | 2016-01-26 | 3M Innovative Properties Company | Lamination transfer films for forming articles with engineered voids |
CN103887237A (zh) * | 2014-03-17 | 2014-06-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、有机电致发光显示装置 |
KR20160149847A (ko) * | 2015-06-19 | 2016-12-28 | 삼성전자주식회사 | 반사 방지 필름, 그 필름을 포함한 전자 장치, 및 그 필름의 제조방법과 제조장치 |
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2016
- 2016-10-18 JP JP2016204331A patent/JP2018067414A/ja active Pending
-
2017
- 2017-07-27 KR KR1020187032428A patent/KR20190060954A/ko not_active Application Discontinuation
- 2017-07-27 US US16/339,395 patent/US20190237698A1/en not_active Abandoned
- 2017-07-27 WO PCT/JP2017/027164 patent/WO2018074026A1/ja active Application Filing
- 2017-07-27 CN CN201780034931.5A patent/CN109315033A/zh active Pending
Patent Citations (4)
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JP2010198797A (ja) * | 2009-02-23 | 2010-09-09 | Nippon Electric Glass Co Ltd | 有機el素子用ガラス基板及びその製造方法 |
JP2011017889A (ja) * | 2009-07-09 | 2011-01-27 | Seiko Epson Corp | 電子機器の製造方法 |
JP2011228262A (ja) * | 2010-01-19 | 2011-11-10 | Panasonic Electric Works Co Ltd | 面状発光装置 |
WO2013136771A1 (ja) * | 2012-03-12 | 2013-09-19 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子 |
Also Published As
Publication number | Publication date |
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CN109315033A (zh) | 2019-02-05 |
US20190237698A1 (en) | 2019-08-01 |
WO2018074026A1 (ja) | 2018-04-26 |
KR20190060954A (ko) | 2019-06-04 |
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