JP2018056257A5 - - Google Patents

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Publication number
JP2018056257A5
JP2018056257A5 JP2016189179A JP2016189179A JP2018056257A5 JP 2018056257 A5 JP2018056257 A5 JP 2018056257A5 JP 2016189179 A JP2016189179 A JP 2016189179A JP 2016189179 A JP2016189179 A JP 2016189179A JP 2018056257 A5 JP2018056257 A5 JP 2018056257A5
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JP
Japan
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type semiconductor
cap layer
layer
thickness
semiconductor layer
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JP2016189179A
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English (en)
Japanese (ja)
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JP2018056257A (ja
JP6669029B2 (ja
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Priority to JP2016189179A priority Critical patent/JP6669029B2/ja
Priority claimed from JP2016189179A external-priority patent/JP6669029B2/ja
Priority to US15/697,261 priority patent/US10083918B2/en
Publication of JP2018056257A publication Critical patent/JP2018056257A/ja
Publication of JP2018056257A5 publication Critical patent/JP2018056257A5/ja
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JP2016189179A 2016-09-28 2016-09-28 半導体装置の製造方法 Active JP6669029B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016189179A JP6669029B2 (ja) 2016-09-28 2016-09-28 半導体装置の製造方法
US15/697,261 US10083918B2 (en) 2016-09-28 2017-09-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016189179A JP6669029B2 (ja) 2016-09-28 2016-09-28 半導体装置の製造方法

Publications (3)

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JP2018056257A JP2018056257A (ja) 2018-04-05
JP2018056257A5 true JP2018056257A5 (https=) 2018-12-27
JP6669029B2 JP6669029B2 (ja) 2020-03-18

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JP2016189179A Active JP6669029B2 (ja) 2016-09-28 2016-09-28 半導体装置の製造方法

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US (1) US10083918B2 (https=)
JP (1) JP6669029B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108962995A (zh) * 2018-07-17 2018-12-07 深圳大学 复合GaN基膜和MOSFET器件
CN112750890A (zh) * 2019-10-29 2021-05-04 季优科技(上海)有限公司 一种具有浮岛结构的沟槽型垂直氮化镓功率器件
JP7294098B2 (ja) * 2019-12-05 2023-06-20 豊田合成株式会社 p型III族窒化物半導体の製造方法
CN112186034A (zh) * 2020-10-22 2021-01-05 西安电子科技大学 一种带有斜场板结构的氮化镓肖特基二极管及其制作方法
JP7578525B2 (ja) * 2021-03-29 2024-11-06 株式会社デンソー 窒化物半導体装置の製造方法
JP7572309B2 (ja) * 2021-06-17 2024-10-23 株式会社デンソー 窒化物半導体装置の製造方法
JP7586776B2 (ja) * 2021-06-17 2024-11-19 株式会社デンソー 半導体装置とその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3244980B2 (ja) 1995-01-06 2002-01-07 株式会社東芝 半導体素子の製造方法
US5656832A (en) 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3948452B2 (ja) * 2003-11-04 2007-07-25 松下電器産業株式会社 荷重センサ及びその製造方法
JP2006032552A (ja) 2004-07-14 2006-02-02 Toshiba Corp 窒化物含有半導体装置
JP2007317794A (ja) * 2006-05-24 2007-12-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
US8823057B2 (en) * 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP6260145B2 (ja) * 2013-08-27 2018-01-17 富士電機株式会社 半導体装置の製造方法
FR3026557B1 (fr) * 2014-09-26 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de dopage d'un semi-conducteur a base de gan
FR3026558B1 (fr) * 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'activation de dopants dans une couche semi-conductrice a base de gan

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