JP2018050009A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2018050009A JP2018050009A JP2016186045A JP2016186045A JP2018050009A JP 2018050009 A JP2018050009 A JP 2018050009A JP 2016186045 A JP2016186045 A JP 2016186045A JP 2016186045 A JP2016186045 A JP 2016186045A JP 2018050009 A JP2018050009 A JP 2018050009A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002184 metal Substances 0.000 claims abstract description 111
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 60
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 20
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 288
- 239000011229 interlayer Substances 0.000 description 35
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 18
- 229910021332 silicide Inorganic materials 0.000 description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
- 230000015654 memory Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229910008484 TiSi Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】一の実施形態によれば、半導体装置は、基板と、前記基板上に設けられた絶縁膜とを備える。前記装置はさらに、前記絶縁膜内に設けられたバリアメタル層と、前記絶縁膜内に前記バリアメタル層を介して設けられたプラグ材層とを有し、前記バリアメタル層は少なくとも、第1金属元素と窒素とを含む第1層と、前記第1金属元素と異なる第2金属元素と窒素とを含む第2層とを有する、コンタクトプラグを備える。
【選択図】図1
Description
図1は、第1実施形態の半導体装置の構造を示す断面図である。
なお、図2(b)の工程では、第1および第3導電層5a、5cを、TiCl4ガスと窒素を含むガスとを用いてプラズマCVDにより形成し、第2導電層5bを、TiCl4ガスを用いてプラズマCVDにより形成してもよい。この場合、第1および第3導電層5a、5cはTiN層となり、第2導電層5bはTi層となるため、図3(b)の熱工程後に、第1から第3導電層5a〜5cはいずれもTiN層となる。すなわち、第2バリアメタル層5は、TiN層のみを含む層となる。この場合、チタンは第1金属元素の例であり、TiCl4ガスは第1ガスの例であり、窒素を含むガスは第2ガスの例である。これにより、第2金属元素を使用せずに図2(a)〜図3(b)の工程を実行することが可能となる。
図9は、第2実施形態の半導体装置の構造を示す断面図である。
図10は、第3実施形態の半導体装置の構造を示す断面図である。
図11は、第4実施形態の半導体装置の構造を示す断面図である。
本実施形態の第2バリアメタル層5は、第1バリアメタル層4の表面に順々に形成された第1導電層5a、第2導電層5b、追加導電層5b’、および第3導電層5cを有している。第2導電層5bは、第2層内の下部層の例であり、追加導電層5b’、第2層内の上部層の例である。
4:第1バリアメタル層、5:第2バリアメタル層、
5a:第1導電層、5b:第2導電層、5c:第3導電層、
5d:第4導電層、5e:第5導電層、6:プラグ材層、
7:配線層、8:第2層間絶縁膜、9:SiN層、10:TiN層、
11:結晶粒、12:粒界、21:ゲート絶縁膜、22:ゲート電極、
23:側壁絶縁膜、24:ソース領域、25:ドレイン領域、
31:配線層、32:層間絶縁膜、33:プラグ層、
34:配線層、35:層間絶縁膜、36:プラグ層、
37:配線層、38:層間絶縁膜、39:ソース側導電層、
41a、41b、41c、41d、41e、41f、41g:絶縁層、
42a、42b、42c、42d、42e、42f:電極層、
43:絶縁膜、44:ドレイン側導電層、45:層間絶縁膜、46:層間絶縁膜、
47a、47b、47c、47d、47e:コンタクトプラグ、
51:第1メモリ絶縁膜、52:電荷蓄積層、
53:第2メモリ絶縁膜、54:チャネル半導体層
Claims (10)
- 基板と、
前記基板上に設けられた絶縁膜と、
前記絶縁膜内に設けられたバリアメタル層と、前記絶縁膜内に前記バリアメタル層を介して設けられたプラグ材層とを有し、前記バリアメタル層は少なくとも、第1金属元素と窒素とを含む第1層と、前記第1金属元素と異なる第2金属元素と窒素とを含む第2層とを有する、コンタクトプラグと、
を備える半導体装置。 - 前記第1金属元素は、チタンであり、前記第2金属元素は、チタンよりも小さい窒化物生成自由エネルギーを有する金属元素である、請求項1に記載の半導体装置。
- 前記第1層はさらに、チタンよりも小さい窒化物生成自由エネルギーを有する第3元素を含む、請求項2に記載の半導体装置。
- 前記第1層はさらに、前記第1層内の結晶粒の粒界に偏析した第4元素を含む、請求項1〜3のいずれか1項に記載の半導体装置。
- 前記バリアメタル層は、複数の前記第1層と複数の前記第2層とを交互に有する、請求項1〜4のいずれか1項に記載の半導体装置。
- 前記第2層は、前記第2金属元素と窒素とを含む下部層と、前記第2金属元素、窒素、および酸素を含む上部層とを有する、請求項1〜5のいずれか1項に記載の半導体装置。
- 基板と、
前記基板上に設けられた絶縁膜と、
前記絶縁膜内に設けられたバリアメタル層と、前記絶縁膜内に前記バリアメタル層を介して設けられたプラグ材層とを有し、前記バリアメタル層は少なくとも、第1金属元素と窒素とを含む第1層と、前記第1金属元素、窒素、および酸素を含む第2層とを有する、コンタクトプラグと、
を備える半導体装置。 - 基板上に絶縁膜を形成し、
前記絶縁膜にコンタクトホールを形成し、
前記コンタクトホール内に、第1金属元素と窒素とを含む第1層と、前記第1金属元素または前記第1金属元素と異なる第2金属元素を含む第2層とを有するバリアメタル層を形成し、
前記コンタクトホール内に前記バリアメタル層を介してプラグ材層を形成し、
前記第1層内の窒素原子が前記第2層に拡散するように熱処理を行う、
ことを含む半導体装置の製造方法。 - 前記第1層は、前記第1金属元素を含む第1ガスと、窒素を含む第2ガスとを用いて形成され、
前記第2層は、前記第1金属元素を含む前記第1ガスを用いて形成される、
請求項8に記載の半導体装置の製造方法。 - 前記第2層は、前記第1層の表面を酸化することで形成される、請求項8に記載の半導体装置の製造方法。
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