JP2018046201A5 - - Google Patents

Download PDF

Info

Publication number
JP2018046201A5
JP2018046201A5 JP2016180766A JP2016180766A JP2018046201A5 JP 2018046201 A5 JP2018046201 A5 JP 2018046201A5 JP 2016180766 A JP2016180766 A JP 2016180766A JP 2016180766 A JP2016180766 A JP 2016180766A JP 2018046201 A5 JP2018046201 A5 JP 2018046201A5
Authority
JP
Japan
Prior art keywords
semiconductor region
insulating
insulating portion
electrode
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016180766A
Other languages
English (en)
Japanese (ja)
Other versions
JP6677613B2 (ja
JP2018046201A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2016180766A priority Critical patent/JP6677613B2/ja
Priority claimed from JP2016180766A external-priority patent/JP6677613B2/ja
Priority to US15/446,499 priority patent/US10529805B2/en
Priority to CN201710377223.3A priority patent/CN107833918B/zh
Publication of JP2018046201A publication Critical patent/JP2018046201A/ja
Publication of JP2018046201A5 publication Critical patent/JP2018046201A5/ja
Application granted granted Critical
Publication of JP6677613B2 publication Critical patent/JP6677613B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016180766A 2016-09-15 2016-09-15 半導体装置 Active JP6677613B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016180766A JP6677613B2 (ja) 2016-09-15 2016-09-15 半導体装置
US15/446,499 US10529805B2 (en) 2016-09-15 2017-03-01 Semiconductor device
CN201710377223.3A CN107833918B (zh) 2016-09-15 2017-05-25 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016180766A JP6677613B2 (ja) 2016-09-15 2016-09-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2018046201A JP2018046201A (ja) 2018-03-22
JP2018046201A5 true JP2018046201A5 (enExample) 2018-10-18
JP6677613B2 JP6677613B2 (ja) 2020-04-08

Family

ID=61560931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016180766A Active JP6677613B2 (ja) 2016-09-15 2016-09-15 半導体装置

Country Status (3)

Country Link
US (1) US10529805B2 (enExample)
JP (1) JP6677613B2 (enExample)
CN (1) CN107833918B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6926012B2 (ja) 2018-02-14 2021-08-25 株式会社東芝 半導体装置
JP7224979B2 (ja) * 2019-03-15 2023-02-20 株式会社東芝 半導体装置
JP7242485B2 (ja) * 2019-09-13 2023-03-20 株式会社東芝 半導体装置
US20230072989A1 (en) * 2020-02-07 2023-03-09 Rohm Co., Ltd. Semiconductor device
JP7566609B2 (ja) * 2020-12-11 2024-10-15 株式会社東芝 半導体装置
JP7506628B2 (ja) 2021-03-24 2024-06-26 株式会社東芝 半導体装置
CN117558748B (zh) * 2023-09-04 2024-07-30 杭州芯迈半导体技术有限公司 一种沟槽型半导体功率器件及版图

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4764998B2 (ja) 2003-11-14 2011-09-07 富士電機株式会社 半導体装置
JP4498796B2 (ja) * 2004-03-29 2010-07-07 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5048273B2 (ja) 2006-05-10 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
JP6037499B2 (ja) * 2011-06-08 2016-12-07 ローム株式会社 半導体装置およびその製造方法
JP5701913B2 (ja) * 2013-01-09 2015-04-15 トヨタ自動車株式会社 半導体装置
US9960267B2 (en) * 2013-03-31 2018-05-01 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP6271155B2 (ja) * 2013-05-21 2018-01-31 株式会社東芝 半導体装置
JP5842896B2 (ja) * 2013-11-12 2016-01-13 トヨタ自動車株式会社 半導体装置
WO2016006263A1 (ja) * 2014-07-11 2016-01-14 新電元工業株式会社 半導体装置及び半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2018046201A5 (enExample)
JP2014199921A5 (ja) 半導体装置
JP2018046255A5 (enExample)
JP2015177135A5 (enExample)
JP2014195063A5 (enExample)
JP2014199406A5 (enExample)
JP2015144271A5 (enExample)
JP2017005277A5 (enExample)
WO2016064134A3 (en) Light emitting device and method of fabricating the same
JP2016201541A5 (ja) 半導体装置
JP2014143408A5 (ja) 半導体装置
JP2015035590A5 (enExample)
JP2016208023A5 (enExample)
JP2013168644A5 (ja) 半導体装置
JP2015188064A5 (ja) 半導体装置
JP2015053477A5 (ja) 半導体装置
JP2015181151A5 (ja) 半導体装置
JP2017028252A5 (ja) トランジスタ
JP2015195365A5 (enExample)
JP2016154225A5 (ja) 半導体装置
JP2017028289A5 (ja) 半導体装置
JP2015195327A5 (enExample)
JP2014195049A5 (ja) 半導体装置
JP2017034243A5 (ja) メモリセルの作製方法及び半導体装置の作製方法
JP2014017477A5 (enExample)