JP2018027593A - 研磨装置 - Google Patents
研磨装置 Download PDFInfo
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- JP2018027593A JP2018027593A JP2016160492A JP2016160492A JP2018027593A JP 2018027593 A JP2018027593 A JP 2018027593A JP 2016160492 A JP2016160492 A JP 2016160492A JP 2016160492 A JP2016160492 A JP 2016160492A JP 2018027593 A JP2018027593 A JP 2018027593A
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- Prior art keywords
- slurry
- polishing
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- pipe
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 209
- 239000002002 slurry Substances 0.000 claims abstract description 180
- 238000007599 discharging Methods 0.000 claims description 3
- 210000002445 nipple Anatomy 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002699 waste material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
加工装置は、ウエーハを保持するチャックテーブルが下側に配置され、研削手段や研磨手
段が上方側に配置されて構成されている(例えば、特許文献2参照)。そして、研削後のウエーハを研磨するときには、スラリをウエーハに供給しつつ研磨パッドをウエーハに対して押し当てながら研磨している。
1:研磨装置 10:第1の装置ベース A:搬出入領域
150:第1のカセット載置部 150a:第1のカセット
151:第2のカセット載置部 151a:第2のカセット
152:仮置き領域 153:位置合わせ手段 154a:ローディングアーム
154b:アンローディングアーム 155:ロボット 156:洗浄手段
11:第2の装置ベース B:加工領域
12:コラム 2:研磨送り手段
20:ボールネジ 21:ガイドレール 22:モータ 23:昇降板 24:ホルダ
17:ターンテーブル 19:ターンテーブルカバー 190:開口部 191:桶部
30:チャックテーブル 300:吸着部 300a:保持面
301:枠体 301c:スカート部
31:回転軸 32:回転手段
33:支持柱 33a:スラストベアリング
4:研磨手段 40:スピンドル 40a:貫通路 41:ハウジング 42:モータ
43:マウント 44:研磨パッド 49:スラリ供給手段
5:スラリ循環手段
50:桶部 500:外側壁 501:底板 502:内側壁
52:エア噴出口
54:配管 54d:配管の側壁 55:開口 541:ホースニップル
56:エア供給源
58:絞り弁 581:第1の絞り弁 582:第2の絞り弁 583:切換え部
59:バルブ
9:スラリ供給手段 91:スラリ供給源 90:スラリ供給パイプ
Claims (2)
- ウエーハを保持するチャックテーブルと、該チャックテーブルが保持するウエーハを研磨する研磨面を有する研磨パッドを回転可能に装着する研磨手段と、該研磨面にスラリを供給するスラリ供給手段と、該チャックテーブルが保持するウエーハの上面に対して接近又は離間する方向に該研磨手段を研磨送りする研磨送り手段と、を備える研磨装置であって、
該チャックテーブルの下側で該スラリを貯留して該研磨面に該スラリを循環させ供給するスラリ循環手段を備え、
該スラリ循環手段は、該チャックテーブルが保持するウエーハに該研磨パッドの該研磨面を接触させた研磨位置において該チャックテーブルの保持面上からオーバーハングした該研磨パッドと該チャックテーブルとを収容する環状凹形状の桶部と、該桶部の底板に配設され該研磨パッドの該チャックテーブルの保持面上からオーバーハングしている該研磨面にスラリを噴射するエア噴出口と、該エア噴出口とエア供給源とを連通させる配管と、該配管の側壁に形成する開口と、エア供給源からのエアの該配管への供給および遮断を制御するバルブと、を備え、
該桶部にスラリを貯留する時には該バルブを開き該配管にエアを供給して該スラリ供給手段で該研磨面に供給されたスラリを該桶部に貯留し、該桶部からスラリを排出する時には該バルブを閉じて該エア噴出口をスラリ排出口として作用させスラリを該配管にエアの供給方向とは逆方向に流し該開口からスラリを排出させる研磨装置。 - 前記スラリ循環手段は、前記配管の前記開口よりもエア供給源側にエア供給源から該配管に供給されるエアの流量を調整する絞り弁を備え、
該絞り弁は、前記桶部にスラリを貯留する時の該配管に供給するエアを第1のエア流量に調整する第1の絞り弁と、該第1の絞り弁より大きく開き前記桶部に貯留したスラリを前記チャックテーブルの保持面上からオーバーハングしている前記研磨面に噴射する時の該配管に供給するエアを該第1のエア流量よりも多い第2のエア流量に調整する第2の絞り弁と、該第1の絞り弁と該第2の絞り弁とを切り換える切換部と、を備える請求項1記載の研磨装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016160492A JP6844970B2 (ja) | 2016-08-18 | 2016-08-18 | 研磨装置 |
TW106122719A TWI733849B (zh) | 2016-08-18 | 2017-07-06 | 研磨裝置 |
KR1020170101187A KR102232750B1 (ko) | 2016-08-18 | 2017-08-09 | 연마 장치 |
US15/673,972 US10562150B2 (en) | 2016-08-18 | 2017-08-10 | Polishing apparatus |
CN201710695455.3A CN107756238B (zh) | 2016-08-18 | 2017-08-15 | 研磨装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016160492A JP6844970B2 (ja) | 2016-08-18 | 2016-08-18 | 研磨装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018027593A true JP2018027593A (ja) | 2018-02-22 |
JP6844970B2 JP6844970B2 (ja) | 2021-03-17 |
Family
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Family Applications (1)
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JP2016160492A Active JP6844970B2 (ja) | 2016-08-18 | 2016-08-18 | 研磨装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10562150B2 (ja) |
JP (1) | JP6844970B2 (ja) |
KR (1) | KR102232750B1 (ja) |
CN (1) | CN107756238B (ja) |
TW (1) | TWI733849B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019186452A (ja) * | 2018-04-13 | 2019-10-24 | 株式会社ディスコ | 研磨装置 |
WO2021192837A1 (ja) * | 2020-03-24 | 2021-09-30 | 東京エレクトロン株式会社 | 除去加工装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7100475B2 (ja) * | 2018-03-30 | 2022-07-13 | 株式会社ディスコ | 加工装置 |
JP7032217B2 (ja) * | 2018-04-05 | 2022-03-08 | 株式会社ディスコ | 研磨装置 |
CN110014342A (zh) * | 2019-05-12 | 2019-07-16 | 宇环数控机床股份有限公司 | 一种用于薄性硬脆材料加工的单面磨床 |
JP7216613B2 (ja) * | 2019-05-16 | 2023-02-01 | 株式会社ディスコ | 加工装置 |
JP7203712B2 (ja) * | 2019-11-18 | 2023-01-13 | Towa株式会社 | 切断装置、及び、切断品の製造方法 |
CN117340792A (zh) * | 2023-11-21 | 2024-01-05 | 禹奕智能科技(杭州)有限公司 | 一种抛光垫自动浸润装置及利用其进行抛光垫浸润的方法 |
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JP2005246585A (ja) * | 2004-03-08 | 2005-09-15 | Nikon Corp | 研磨装置、研磨方法、光学素子及び露光装置 |
JP2006344878A (ja) * | 2005-06-10 | 2006-12-21 | Disco Abrasive Syst Ltd | 加工装置および加工方法 |
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-
2016
- 2016-08-18 JP JP2016160492A patent/JP6844970B2/ja active Active
-
2017
- 2017-07-06 TW TW106122719A patent/TWI733849B/zh active
- 2017-08-09 KR KR1020170101187A patent/KR102232750B1/ko active IP Right Grant
- 2017-08-10 US US15/673,972 patent/US10562150B2/en active Active
- 2017-08-15 CN CN201710695455.3A patent/CN107756238B/zh active Active
Patent Citations (5)
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JPH09314466A (ja) * | 1996-03-25 | 1997-12-09 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの研磨装置および研磨方法 |
JP2001341063A (ja) * | 2000-06-02 | 2001-12-11 | Saafu System Kk | 平面研磨装置 |
JP2005103696A (ja) * | 2003-09-30 | 2005-04-21 | Disco Abrasive Syst Ltd | 研磨装置 |
JP2005246585A (ja) * | 2004-03-08 | 2005-09-15 | Nikon Corp | 研磨装置、研磨方法、光学素子及び露光装置 |
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Cited By (4)
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---|---|---|---|---|
JP2019186452A (ja) * | 2018-04-13 | 2019-10-24 | 株式会社ディスコ | 研磨装置 |
JP7108450B2 (ja) | 2018-04-13 | 2022-07-28 | 株式会社ディスコ | 研磨装置 |
WO2021192837A1 (ja) * | 2020-03-24 | 2021-09-30 | 東京エレクトロン株式会社 | 除去加工装置 |
JP7403634B2 (ja) | 2020-03-24 | 2023-12-22 | 東京エレクトロン株式会社 | 除去加工装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201812891A (zh) | 2018-04-01 |
CN107756238B (zh) | 2021-03-26 |
TWI733849B (zh) | 2021-07-21 |
US20180050436A1 (en) | 2018-02-22 |
JP6844970B2 (ja) | 2021-03-17 |
US10562150B2 (en) | 2020-02-18 |
CN107756238A (zh) | 2018-03-06 |
KR20180020888A (ko) | 2018-02-28 |
KR102232750B1 (ko) | 2021-03-25 |
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