JP2018022758A - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
JP2018022758A
JP2018022758A JP2016152445A JP2016152445A JP2018022758A JP 2018022758 A JP2018022758 A JP 2018022758A JP 2016152445 A JP2016152445 A JP 2016152445A JP 2016152445 A JP2016152445 A JP 2016152445A JP 2018022758 A JP2018022758 A JP 2018022758A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
substrate
light
reinforcing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016152445A
Other languages
Japanese (ja)
Other versions
JP6782579B2 (en
Inventor
俊之 水野
Toshiyuki Mizuno
俊之 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2016152445A priority Critical patent/JP6782579B2/en
Publication of JP2018022758A publication Critical patent/JP2018022758A/en
Application granted granted Critical
Publication of JP6782579B2 publication Critical patent/JP6782579B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device in which a light reflector is firmly in close contact with a substrate.SOLUTION: A light-emitting device 10 comprises: a substrate 12; a light-emitting element 14; a light reflector 16; a reinforcement material 18; and a sealant 20. The substrate 12 includes: a peripheral edge 12a; and a center portion 12b located inside the peripheral edge 12a. At least a part of the peripheral edge 12a has an upper face lower than an upper face of the center portion 12b. The light-emitting element 14 is provided over the center portion 12b. The light reflector 16 is provided on the part of the peripheral edge 12a lower than the center portion 12b. The reinforcement material 18 is provided so as to be in contact with an inner wall 16a of the light reflector 16, and the upper face of the center portion 12b. The sealant 20 covers the light-emitting element 14 and the reinforcement material 18 inside the light reflector 16. An adhesive force of the reinforcement material 18 to an upper face of the substrate 12 is larger than an adhesive force of the sealant 20 to the upper face of the substrate 12.SELECTED DRAWING: Figure 1

Description

本発明は、薄型の発光装置とその製造方法に関するものである。   The present invention relates to a thin light emitting device and a manufacturing method thereof.

近年、LEDは、室内照明やサイン等の照明に留まらず、車載用の照明としてもよく使用されている。これは、明るさや消費電力等の性能、寿命、価格、およびデザインの点で、従来の蛍光灯を凌駕することが現実味を帯びてきたことの表れと言っても過言ではない。LEDは、その高輝度化を追求すると、ハイワットのLED素子を搭載するパッケージとなるため、LED素子から発生する熱を効率良く逃がす必要がある。   In recent years, LEDs are often used as in-vehicle lighting as well as room lighting and signs. It is no exaggeration to say that surpassing conventional fluorescent lamps in terms of performance such as brightness and power consumption, lifespan, price, and design. When an LED is pursued to increase its brightness, it becomes a package on which a high-watt LED element is mounted. Therefore, it is necessary to efficiently release heat generated from the LED element.

放熱構造を備えるLED用の基板として、図7に示すような、LED素子を搭載する基材70に円柱状の銅ピン72を埋め込んだ銅インレイ基板74や、図8に示すような、厚銅基板をエッチングにより円柱状に加工した銅ポスト80を備える銅ポスト基板82が使用されている。しかし、このような放熱構造を備える基板を用いることによって、LEDの小型化が課題となっていた。また、LEDは、小型化と並行して薄型化も進んでいる。樹脂成型品を基板に貼りつけた従来の光反射材を備えるLEDでは、小型化・薄型化に限界がある。このため、LEDの基板および光反射材の高精細化が急務となっていた。   As a substrate for LED having a heat dissipation structure, a copper inlay substrate 74 in which a columnar copper pin 72 is embedded in a base material 70 on which an LED element is mounted as shown in FIG. 7, or a thick copper as shown in FIG. A copper post substrate 82 including a copper post 80 obtained by processing the substrate into a cylindrical shape by etching is used. However, downsizing of LEDs has been a challenge by using a substrate having such a heat dissipation structure. In addition, LEDs are becoming thinner in parallel with downsizing. In an LED including a conventional light reflecting material in which a resin molded product is attached to a substrate, there is a limit to downsizing and thinning. For this reason, there has been an urgent need to increase the definition of the LED substrate and the light reflecting material.

そこで、図9に示すような発光装置90が開発された。この発光装置90は、集合基板92に発光素子であるLED素子94を搭載して、LED素子94を封止材96で覆った後、集合基板92の上部と封止材96の所定の箇所に所定の幅でダイシングにより切り込みを入れ(いわゆる「ハーフダイシング」)、この切り込みに光反射材98を充填して作製する(特許文献1)。この発光装置90の作製方法によって、光反射材98の幅と高さの高精度化が可能となった。しかしながら、この発光装置90の作製方法では、ダイシングによって集合基板92の約半分の深さまで溝を掘るため、集合基板92の厚さが0.4mm以上必要であった。   Therefore, a light emitting device 90 as shown in FIG. 9 has been developed. In the light emitting device 90, an LED element 94 that is a light emitting element is mounted on a collective substrate 92, and the LED element 94 is covered with a sealing material 96, and then the upper portion of the collective substrate 92 and a predetermined portion of the sealing material 96. A cut is made by dicing with a predetermined width (so-called “half dicing”), and the light reflecting material 98 is filled in the cut (Patent Document 1). With the method for manufacturing the light emitting device 90, the width and height of the light reflecting material 98 can be increased. However, in this method of manufacturing the light emitting device 90, the groove is dug to about half the depth of the collective substrate 92 by dicing, and therefore the thickness of the collective substrate 92 needs to be 0.4 mm or more.

LEDの薄型化が望まれる現在、集合基板の厚さを0.2mm以下にする必要がある。封止材と厚さが0.2mm以下の集合基板の積層部にハーフダイシングを適用すると、ダイシングブレードが封止材と集合基板の境界付近を走査するので、集合基板から封止材が剥がれる場合がある。この場合、ハーフダイシングによって形成された切り込みに光反射材を充填しても、光反射材と集合基板との強い密着性を得ることが困難となっている。光反射材と薄い集合基板との密着強度の向上が急務である。   At present, when it is desired to reduce the thickness of the LED, the thickness of the collective substrate needs to be 0.2 mm or less. When half dicing is applied to the laminated part of the sealing material and the aggregate substrate with a thickness of 0.2 mm or less, the dicing blade scans the vicinity of the boundary between the sealing material and the aggregate substrate, and the sealing material peels off from the aggregate substrate There is. In this case, even if the light reflecting material is filled in the cut formed by half dicing, it is difficult to obtain strong adhesion between the light reflecting material and the collective substrate. There is an urgent need to improve the adhesion strength between the light reflecting material and the thin aggregate substrate.

特開2002−368281号公報JP 2002-368281 A

本発明はこのような事情に鑑みてなされたものであり、基板と光反射材が強く密着した発光装置とその製造方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a light emitting device in which a substrate and a light reflecting material are in close contact with each other, and a manufacturing method thereof.

本発明の発光装置は、周縁部と、周縁部の内側の中心部とを備え、周縁部の少なくとも一部の上面が中心部の上面より低い基板と、中心部の上に設けられた発光素子と、中心部より低い周縁部の上に設けられた光反射材と、光反射材の内壁および中心部の上面に接するように設けられた補強材と、光反射材の内側で発光素子および補強材を覆う封止材とを有し、基板の上面に対する補強材の接着力が、基板の上面に対する封止材の接着力より大きい。   The light-emitting device of the present invention includes a peripheral portion and a central portion inside the peripheral portion, a substrate in which at least a part of the upper surface of the peripheral portion is lower than the upper surface of the central portion, and a light-emitting element provided on the central portion A light reflecting material provided on the peripheral edge lower than the central portion, a reinforcing material provided in contact with the inner wall of the light reflecting material and the upper surface of the central portion, and the light emitting element and the reinforcement inside the light reflecting material And the adhesive force of the reinforcing material to the upper surface of the substrate is larger than the adhesive force of the sealing material to the upper surface of the substrate.

本発明の発光装置において、中心部の厚さが0.1mm以下であってもよい。本発明の発光装置において、補強材が波長970nmの光を90%以上反射してもよい。本発明の発光装置において、補強材が透光性を備えていてもよい。本発明の発光装置において、補強材が、基板から離れるほど幅が狭くなる複数の補強部材から構成されていてもよい。   In the light emitting device of the present invention, the thickness of the central portion may be 0.1 mm or less. In the light emitting device of the present invention, the reinforcing material may reflect 90% or more of light having a wavelength of 970 nm. In the light emitting device of the present invention, the reinforcing material may have translucency. In the light emitting device of the present invention, the reinforcing material may be composed of a plurality of reinforcing members whose widths become narrower as they are separated from the substrate.

本発明の発光装置の製造方法は、集合基板上に格子状に実装された複数の発光素子の間に、補強材の列を少なくとも平行に形成する補強材形成工程と、複数の発光素子と補強材の列を封止材で覆う封止工程と、少なくとも平行に形成された補強材の中央部に沿って、補強材の最小幅より小さい幅を備える直方体形状の複数の溝を、集合基板の上部、補強材、および封止材に渡って形成する溝形成工程と、複数の溝内に光反射材を充填する光反射材形成工程と、複数の発光素子の間を切断して、個々の発光装置に分離する分離工程とを有し、集合基板の上面に対する補強材の接着力が、集合基板の上面に対する封止材の接着力より大きく、分離工程が、光反射材の幅より小さい幅で、複数の光反射材の中央部に沿って複数の発光素子の間を切断する過程を含んでいる。   The method for manufacturing a light emitting device according to the present invention includes a reinforcing material forming step of forming at least parallel rows of reinforcing materials between a plurality of light emitting elements mounted in a grid pattern on a collective substrate, and a plurality of light emitting elements and a reinforcement. A plurality of rectangular parallelepiped-shaped grooves having a width smaller than the minimum width of the reinforcing material, at least along the central portion of the reinforcing material formed in parallel with the sealing step of covering the row of materials with the sealing material. A groove forming step formed over the upper portion, the reinforcing material, and the sealing material, a light reflecting material forming step in which the light reflecting material is filled in the plurality of grooves, A separation step for separating the light emitting device, wherein the adhesive strength of the reinforcing material to the upper surface of the collective substrate is greater than the adhesive strength of the sealing material to the upper surface of the collective substrate, and the separation step is smaller than the width of the light reflecting material. With, cut between the light emitting elements along the central part of the light reflecting material It contains that process.

本発明の発光装置の製造方法において、補強材形成工程では、複数の発光素子の間に、補強材の列を格子状に形成し、溝形成工程では、格子状に形成された補強材の中央部に沿って複数の溝を形成してもよい。本発明の発光装置の製造方法において、補強材が、第一補強部材と、第一補強部材の最小幅より小さい最大幅を備える第二補強部材との積層部を備え、補強材形成工程が、第一補強部材を形成し、その後、第一補強部材の上に第二補強部材を形成する過程を含んでいてもよい。   In the light emitting device manufacturing method of the present invention, in the reinforcing material forming step, a row of reinforcing materials is formed in a lattice shape between the plurality of light emitting elements, and in the groove forming step, the center of the reinforcing material formed in the lattice shape is formed. A plurality of grooves may be formed along the portion. In the method for manufacturing a light emitting device of the present invention, the reinforcing material includes a laminated portion of the first reinforcing member and a second reinforcing member having a maximum width smaller than the minimum width of the first reinforcing member, and the reinforcing material forming step includes: A process of forming the first reinforcing member and then forming the second reinforcing member on the first reinforcing member may be included.

本発明の発光装置の製造方法において、集合基板の厚さが0.1mm以下で、補強材の高さが0.1mm以上であってもよい。本発明の発光装置の製造方法において、集合基板の厚さが0.1mm以下であり、補強材が厚さ0.1mm以上の樹脂板であり、補強材形成工程では、接着剤により集合基板に樹脂板を貼り付けてもよい。   In the method for manufacturing the light emitting device of the present invention, the aggregate substrate may have a thickness of 0.1 mm or less and the reinforcing material may have a height of 0.1 mm or more. In the method for manufacturing a light emitting device of the present invention, the thickness of the collective substrate is 0.1 mm or less, the reinforcing material is a resin plate having a thickness of 0.1 mm or more, and the reinforcing material is formed on the collective substrate by an adhesive. A resin plate may be attached.

本発明の発光装置では、基板に対する接着力の大きい補強材が、光反射材の内壁および基板の上面に接するように設けられているので、基板と光反射材が強く密着する。また、本発明の発光装置の製造方法によれば、本発明の発光装置が簡易に作製できる。   In the light emitting device of the present invention, since the reinforcing material having a large adhesive force to the substrate is provided so as to be in contact with the inner wall of the light reflecting material and the upper surface of the substrate, the substrate and the light reflecting material are strongly adhered. Moreover, according to the manufacturing method of the light-emitting device of this invention, the light-emitting device of this invention can be produced simply.

本発明の実施形態の発光装置の断面模式図。The cross-sectional schematic diagram of the light-emitting device of embodiment of this invention. 本発明の第一実施形態の発光装置の製造方法の前段を説明するための断面模式図。The cross-sectional schematic diagram for demonstrating the front | former stage of the manufacturing method of the light-emitting device of 1st embodiment of this invention. 本発明の第一実施形態の発光装置の製造方法の後段を説明するための断面模式図。The cross-sectional schematic diagram for demonstrating the back | latter stage of the manufacturing method of the light-emitting device of 1st embodiment of this invention. 本発明の第二実施形態の発光装置の製造方法の前段を説明するための断面模式図。The cross-sectional schematic diagram for demonstrating the front | former stage of the manufacturing method of the light-emitting device of 2nd embodiment of this invention. 本発明の第二実施形態の発光装置の製造方法の中後段を説明するための断面模式図。The cross-sectional schematic diagram for demonstrating the back | latter stage of the manufacturing method of the light-emitting device of 2nd embodiment of this invention. 本発明の第二実施形態の発光装置の製造方法の後段を説明するための断面模式図。Sectional schematic diagram for demonstrating the back | latter stage of the manufacturing method of the light-emitting device of 2nd embodiment of this invention. 発光装置用の銅インレイ基板の断面模式図。The cross-sectional schematic diagram of the copper inlay board | substrate for light-emitting devices. 発光装置用の銅ポスト基板の断面模式図。The cross-sectional schematic diagram of the copper post board | substrate for light-emitting devices. 従来の発光装置の断面模式図。The cross-sectional schematic diagram of the conventional light-emitting device. 薄い基板を備える発光装置の製造に、従来のハーフダイシングを適用したときの問題点を説明するための断面模式図。The cross-sectional schematic diagram for demonstrating a problem when the conventional half dicing is applied to manufacture of a light-emitting device provided with a thin board | substrate.

以下、本発明の発光装置とその製造方法について、図面を参照しながら実施形態に基づいて説明する。なお、図面は、発光装置、発光装置を構成する部材、および発光装置の周辺部材を模式的に表したものであり、これらの実物の寸法および寸法比は、図面上の寸法および寸法比と必ずしも一致していない。また、特にことわらない限り、本明細書では便宜上、図1に示す発光装置の向きを基準に「上」および「下」などの方向を表す。重複説明は適宜省略し、同一部材には同一符号を付与することがある。   Hereinafter, a light-emitting device and a method for manufacturing the same according to the present invention will be described based on embodiments with reference to the drawings. The drawings schematically show the light-emitting device, the members constituting the light-emitting device, and the peripheral members of the light-emitting device, and the actual dimensions and size ratios thereof are not necessarily the same as the dimensions and dimension ratios on the drawings. Does not match. Further, unless otherwise specified, in this specification, for the sake of convenience, directions such as “up” and “down” are represented with reference to the direction of the light-emitting device shown in FIG. Duplicate description will be omitted as appropriate, and the same reference numerals may be given to the same members.

(発光装置)
図1は、本発明の実施形態に係る発光装置10の断面を示している。発光装置10は、基板12と、発光素子14と、光反射材16と、補強材18と、封止材20とを備えている。基板12は長方形の板状部材である。なお、正方形も長方形に含まれる。基板12は、その上下面に各種導体部材が設けられる絶縁性部材で、ガラスエポキシ樹脂、セラミックス、またはガラス等から構成される。本実施形態では、レーザービア・フィルドめっき22が基板12に形成されている。そして、レーザービア・フィルドめっき22の上面と下面には、回路基板24,26,28,30が設置されている。なお、本発明の発光装置では、基板の形状、構造、および材質等は特に制限がない。
(Light emitting device)
FIG. 1 shows a cross section of a light emitting device 10 according to an embodiment of the present invention. The light emitting device 10 includes a substrate 12, a light emitting element 14, a light reflecting material 16, a reinforcing material 18, and a sealing material 20. The substrate 12 is a rectangular plate member. Squares are also included in rectangles. The substrate 12 is an insulating member provided with various conductor members on its upper and lower surfaces, and is made of glass epoxy resin, ceramics, glass, or the like. In this embodiment, the laser via / filled plating 22 is formed on the substrate 12. Circuit boards 24, 26, 28 and 30 are provided on the upper and lower surfaces of the laser via / filled plating 22. In the light emitting device of the present invention, the shape, structure, material, and the like of the substrate are not particularly limited.

基板12は、周縁部12aと、周縁部12a以外の部分、すなわち周縁部12aの内側である中心部12bから構成されている。周縁部12aの少なくとも一部の上面は、中心部12bの上面より低くなっている。本実施形態では、周縁部12aの上面の全てが、中心部12bの上面より低くなっている。そして、中心部の厚さは0.1mm以下である。発光素子14は、回路基板26を介して、中心部12bの上に設けられている。また、発光素子14の上面電極は、ワイヤー32によって回路基板24に電気的に接続されている。   The board | substrate 12 is comprised from the peripheral part 12a and the part other than the peripheral part 12a, ie, the center part 12b inside the peripheral part 12a. The upper surface of at least a part of the peripheral edge portion 12a is lower than the upper surface of the central portion 12b. In the present embodiment, the entire upper surface of the peripheral edge portion 12a is lower than the upper surface of the central portion 12b. And the thickness of a center part is 0.1 mm or less. The light emitting element 14 is provided on the central portion 12b via the circuit board 26. Further, the upper electrode of the light emitting element 14 is electrically connected to the circuit board 24 by a wire 32.

光反射材16は、例えば、シリコーン樹脂やフェノール樹脂等の母材樹脂にTiOやZrO等の光反射物質を添加した光反射樹脂から構成されている。光反射材16は、周縁部12aのうち、中心部12bより低い部分の上に設けられている。本実施形態では、周縁部12aの上面の全てが、中心部12bの上面より低くなっているので、周縁部12a全体の上に光反射材16が設けられている。 The light reflecting material 16 is made of, for example, a light reflecting resin obtained by adding a light reflecting material such as TiO 2 or ZrO 2 to a base resin such as a silicone resin or a phenol resin. The light reflecting material 16 is provided on the lower part of the peripheral part 12a than the central part 12b. In this embodiment, since all the upper surfaces of the peripheral part 12a are lower than the upper surface of the center part 12b, the light reflection material 16 is provided on the whole peripheral part 12a.

なお、光反射材16は、基板12の一組の対辺の周縁部12aの上にのみ設けてもよい。このような発光装置を光源として横方向に並べて、薄い導光板に側面実装した場合、側面実装した状態で発光装置の上下方向への光の漏れを光反射材16によって抑えることができる。一方、光反射材16が横方向にないため、横方向に光が拡散しながら発光装置の前面から光が放射される。このため、2つの発光装置の中間の地点でも、導光板に入射する光量が少なくなることを抑えられる。   Note that the light reflecting material 16 may be provided only on the peripheral edge portion 12 a of the pair of opposite sides of the substrate 12. When such light emitting devices are arranged in the horizontal direction as light sources and mounted on a thin light guide plate on the side, light leakage in the vertical direction of the light emitting device can be suppressed by the light reflecting material 16 in a state where the light is mounted on the side. On the other hand, since the light reflecting material 16 is not in the lateral direction, light is emitted from the front surface of the light emitting device while the light is diffused in the lateral direction. For this reason, it is possible to suppress the amount of light incident on the light guide plate from being reduced even at a point between the two light emitting devices.

補強材18は、光反射材16の内壁16aおよび中心部12bの上面に接するように設けられている。なお、「補強材が中心部の上面に接する」には、接着剤を介して、補強材が中心部の上面に接着されていることが含まれる。封止材20は、光反射材16の内側で、発光素子14および補強材18を覆っている。封止材20は、ちり、水分、および外力などから、発光素子14およびワイヤー32等を保護するためのもので、例えば、シリコーン樹脂やエポキシ樹脂等の光透過性樹脂から構成されている。   The reinforcing material 18 is provided in contact with the inner wall 16a of the light reflecting material 16 and the upper surface of the central portion 12b. Note that “the reinforcing material is in contact with the upper surface of the central portion” includes that the reinforcing material is bonded to the upper surface of the central portion via an adhesive. The sealing material 20 covers the light emitting element 14 and the reinforcing material 18 inside the light reflecting material 16. The sealing material 20 is for protecting the light emitting element 14 and the wire 32 from dust, moisture, external force, and the like, and is made of, for example, a light transmissive resin such as a silicone resin or an epoxy resin.

また、基板12の上面に対する補強材18の接着力は、基板12の上面に対する封止材20の接着力より大きい。接着剤を介して補強材18が中心部12bの上面に接着されている場合には、接着剤が存在する状態で、基板12の上面に対する補強材18の接着力が、基板12の上面に対する封止材20の接着力より大きい。ここで、接着力の大きさは、日本工業規格(JIS)の引張接着強さ(JIS K 6849)、引張せん断接着強さ(JIS K 6850)、剥離接着強さ(JIS K 6854)等の試験によって測定できる。基板12の上面に対する補強材18の接着力が基板12の上面に対する封止材20の接着力より大きいため、ハーフダイシングによって薄い基板12に光反射材16を設ける工程で、補強材18が基板12から剥がれにくい。その結果、光反射材16が、基板12と補強材18に密着する。   Further, the adhesive force of the reinforcing material 18 to the upper surface of the substrate 12 is larger than the adhesive force of the sealing material 20 to the upper surface of the substrate 12. When the reinforcing material 18 is bonded to the upper surface of the central portion 12b via an adhesive, the adhesive force of the reinforcing material 18 to the upper surface of the substrate 12 is sealed to the upper surface of the substrate 12 in the presence of the adhesive. It is larger than the adhesive strength of the stopper 20. Here, the magnitude of the adhesive strength is determined by tests such as Japanese Industrial Standards (JIS) tensile adhesive strength (JIS K 6849), tensile shear adhesive strength (JIS K 6850), and peel adhesive strength (JIS K 6854). Can be measured by. Since the adhesive force of the reinforcing material 18 to the upper surface of the substrate 12 is larger than the adhesive force of the sealing material 20 to the upper surface of the substrate 12, the reinforcing material 18 is attached to the substrate 12 in the step of providing the light reflecting material 16 on the thin substrate 12 by half dicing. Hard to peel off. As a result, the light reflecting material 16 is in close contact with the substrate 12 and the reinforcing material 18.

本実施形態では、補強材18が、第一補強部材18aと第二補強部材18bの積層部を備えている。そして、第二補強部材18bの幅は、第一補強部材18aの幅より小さい。このように、第一補強部材18aの最小幅より第二補強部材18bの最大幅が小さいため、発光素子14が発した光が上方向に拡散して、発光装置10の上面の開口から出射するのを、補強材18によって妨げられにくい。なお、補強材18が、基板12から離れるほど幅が狭くなる3以上の補強部材から構成されている場合も、発光素子14が発した光は補強材18によって妨げられにくい。   In the present embodiment, the reinforcing member 18 includes a laminated portion of the first reinforcing member 18a and the second reinforcing member 18b. The width of the second reinforcing member 18b is smaller than the width of the first reinforcing member 18a. Thus, since the maximum width of the second reinforcing member 18b is smaller than the minimum width of the first reinforcing member 18a, the light emitted from the light emitting element 14 diffuses upward and is emitted from the opening on the upper surface of the light emitting device 10. This is unlikely to be hindered by the reinforcing material 18. Even when the reinforcing member 18 is composed of three or more reinforcing members whose widths become narrower as the distance from the substrate 12 increases, the light emitted from the light emitting element 14 is not easily blocked by the reinforcing member 18.

補強材18の材質としては、フォトレジスト材や、基板12の材質と同じ樹脂等が挙げられる。補強材18が波長970nmの光を90%以上反射する材質から構成されていれば、補強材18を光反射材として使用できるため、発光装置10の上面からの出射光を強くできる。また、補強材18が透光性の材質から構成されていれば、発光素子14が発した光は、補強材18を透過して、光反射材10で反射されて、発光装置10の上面から出射される。   Examples of the material of the reinforcing material 18 include a photoresist material and the same resin as the material of the substrate 12. If the reinforcing material 18 is made of a material that reflects 90% or more of light having a wavelength of 970 nm, the reinforcing material 18 can be used as a light reflecting material, so that the emitted light from the upper surface of the light emitting device 10 can be increased. Further, if the reinforcing material 18 is made of a translucent material, the light emitted from the light emitting element 14 is transmitted through the reinforcing material 18 and reflected by the light reflecting material 10, and from the upper surface of the light emitting device 10. Emitted.

(発光装置の製造方法1)
図2および図3は、発光装置10の製造方法を説明するための断面図である。発光装置10の製造方法は、補強材形成工程と、素子搭載工程と、封止工程と、溝形成工程と、光反射材形成工程と、分離工程とを備えている。補強材形成工程では、図2(a)に示すように、集合基板40上に格子状に実装された複数の発光素子14の間に、補強材18の列を格子状に形成する。補強材18は、第一補強部材18aと、第一補強部材18aの最小幅より小さい最大幅を備える第二補強部材18bとの積層部を備えている。なお、集合基板40は厚さ0.1mmの両面板であり、レーザービアによるIVH構造の放熱機構を備えている。IVH構造は、フィルドめっきによって、銅めっきで穴内を充填している。集合基板40は、銅ポスト基板の構造を備えていてもよい。
(Light-emitting device manufacturing method 1)
2 and 3 are cross-sectional views for explaining a method for manufacturing the light emitting device 10. The manufacturing method of the light emitting device 10 includes a reinforcing material forming process, an element mounting process, a sealing process, a groove forming process, a light reflecting material forming process, and a separating process. In the reinforcing material forming step, as shown in FIG. 2A, a row of reinforcing materials 18 is formed in a lattice shape between the plurality of light emitting elements 14 mounted on the collective substrate 40 in a lattice shape. The reinforcing member 18 includes a laminated portion of a first reinforcing member 18a and a second reinforcing member 18b having a maximum width smaller than the minimum width of the first reinforcing member 18a. The collective substrate 40 is a double-sided board having a thickness of 0.1 mm, and includes a heat dissipation mechanism having an IVH structure using laser vias. The IVH structure is filled with copper plating by filled plating. The aggregate substrate 40 may have a copper post substrate structure.

補強材形成工程は、第一補強部材18aを形成し、その後、第一補強部材18aの上に第二補強部材18bを形成する過程を含んでいる。第一補強部材18aの列は、例えば、スクリーン印刷でソルダーレジスト(例:太陽インキ製、PSR−4000LEW−1)を集合基板40上に塗布し、150℃・15分間の熱処理で半硬化させた後、このレジストを所定のポジフィルムで覆い、紫外線露光・アルカリ現像を行うことによって形成できる。これをもう一度行えば、第一補強部材18aの上に第二補強部材18bを形成することができる。このとき、第一補強部材18aの幅より第二補強部材18bの幅を小さくして、例えば、高さ約0.1mmの階段状の補強材18を形成する。   The reinforcing material forming step includes a process of forming the first reinforcing member 18a and then forming the second reinforcing member 18b on the first reinforcing member 18a. The row of the first reinforcing members 18a is, for example, coated with a solder resist (eg, PSR-4000LEW-1 made by Taiyo Ink) on the aggregate substrate 40 by screen printing, and semi-cured by heat treatment at 150 ° C. for 15 minutes. Thereafter, the resist can be covered with a predetermined positive film, and ultraviolet exposure and alkali development can be performed. If this is performed once again, the second reinforcing member 18b can be formed on the first reinforcing member 18a. At this time, the width of the second reinforcing member 18b is made smaller than the width of the first reinforcing member 18a to form, for example, a stair-like reinforcing material 18 having a height of about 0.1 mm.

さらにこれを繰り返して、三段以上の階段状の補強材18を形成してもよい。最後に、150℃・60分間の熱処理で補強部材18a,18bを完全硬化させる。補強材18の材料として、ドライフィルムタイプのソルダーレジストを用いてもよい。また、液状のソルダーレジストの透明インクから補強材18を形成して、発光素子14から発せられた光が補強材18を透過するようにして、光反射材16で反射させてもよい。なお、本実施形態では、補強材18の列を格子状に形成しているが、補強材18の列を平行に形成して、発光装置10の基板12の一組の対辺に補強材18を設けてもよい。   Further, this may be repeated to form a stair-shaped reinforcing material 18 having three or more steps. Finally, the reinforcing members 18a and 18b are completely cured by heat treatment at 150 ° C. for 60 minutes. A dry film type solder resist may be used as the material of the reinforcing material 18. Alternatively, the reinforcing material 18 may be formed from a liquid solder resist transparent ink so that the light emitted from the light emitting element 14 is transmitted through the reinforcing material 18 and reflected by the light reflecting material 16. In this embodiment, the rows of the reinforcing members 18 are formed in a lattice shape. However, the rows of the reinforcing members 18 are formed in parallel, and the reinforcing members 18 are disposed on the opposite sides of the pair of the substrates 12 of the light emitting device 10. It may be provided.

素子搭載工程では、図2(b)に示すように、ダイボンドペーストを用いて回路基板26の上に発光素子14を固定した後、発光素子14の上面電極と回路基板24を、ワイヤー32で電気的に接続する。封止工程では、図2(c)に示すように、複数の発光素子14と補強材18の列を封止材20で覆う。具体的には、モールド樹脂で発光素子14と補強材18を覆い、160℃・3時間の熱処理でモールド樹脂を硬化させる。溝形成工程では、図3(d)に示すように、ハーフダイシングによって、補強材18の列の中央部に沿って、補強材18の最小幅より小さい幅を備える直方体形状の複数の溝42を、集合基板40の上部、補強材18、および封止材20に渡って形成する。このとき、集合基板40に形成される切り込みの深さは0.05mm以下である。   In the element mounting step, as shown in FIG. 2B, after fixing the light emitting element 14 on the circuit board 26 using a die bond paste, the upper surface electrode of the light emitting element 14 and the circuit board 24 are electrically connected by the wire 32. Connect. In the sealing step, as shown in FIG. 2C, the row of the plurality of light emitting elements 14 and the reinforcing material 18 is covered with the sealing material 20. Specifically, the light emitting element 14 and the reinforcing material 18 are covered with a mold resin, and the mold resin is cured by a heat treatment at 160 ° C. for 3 hours. In the groove forming step, as shown in FIG. 3D, a plurality of rectangular parallelepiped grooves 42 having a width smaller than the minimum width of the reinforcing material 18 are formed along the central portion of the row of the reinforcing material 18 by half dicing. And formed over the upper portion of the collective substrate 40, the reinforcing material 18, and the sealing material 20. At this time, the depth of the cut formed in the collective substrate 40 is 0.05 mm or less.

光反射材形成工程では、図3(e)に示すように、複数の溝42内に光反射材16を充填する。分離工程では、図3(f)に示すように、複数の発光素子14の間を切断して、個々の発光装置10に分離する。分離工程は、光反射材16の幅より小さい幅で、複数の光反射材16の中央部に沿って複数の発光素子14の間を切断する過程を含んでいる。このとき、例えば幅0.05mmのダイシングブレードを用いることができる。このように、本実施形態の発光装置10の製造方法は、厚さが0.1mm以下の薄い集合基板40を用いる場合に特に適している。このとき、補強材18の高さ、すなわち、第一補強部材18aの高さと第二補強部材18bの高さの合計が0.1mm以上あれば、光反射材16が基板12に密着する。   In the light reflecting material forming step, the light reflecting material 16 is filled into the plurality of grooves 42 as shown in FIG. In the separation step, as shown in FIG. 3F, the plurality of light emitting elements 14 are cut and separated into individual light emitting devices 10. The separation step includes a process of cutting between the plurality of light emitting elements 14 along the central portion of the plurality of light reflecting materials 16 with a width smaller than the width of the light reflecting material 16. At this time, for example, a dicing blade having a width of 0.05 mm can be used. As described above, the method for manufacturing the light emitting device 10 of the present embodiment is particularly suitable when the thin aggregate substrate 40 having a thickness of 0.1 mm or less is used. At this time, if the height of the reinforcing material 18, that is, the total height of the first reinforcing member 18 a and the second reinforcing member 18 b is 0.1 mm or more, the light reflecting material 16 adheres to the substrate 12.

(発光装置の製造方法2)
図4から図6は、発光装置50の製造方法を説明するための断面図である。発光装置50では、発光装置10の補強材18に代えて、樹脂製の板状部材である補強材58が、接着剤60によって、基板12に貼り付けられている。そして、基板12の上面に対する補強材58の接着力が、基板12の上面に対する封止材20の接着力より大きい。補強材58と接着剤60を用いた点を除いて、発光装置50を構成している部材は、発光装置10と同じである。
(Light emitting device manufacturing method 2)
4 to 6 are cross-sectional views for explaining a method for manufacturing the light emitting device 50. In the light emitting device 50, instead of the reinforcing material 18 of the light emitting device 10, a reinforcing material 58 that is a resin plate-like member is attached to the substrate 12 with an adhesive 60. Further, the adhesive force of the reinforcing material 58 to the upper surface of the substrate 12 is larger than the adhesive force of the sealing material 20 to the upper surface of the substrate 12. The members constituting the light emitting device 50 are the same as those of the light emitting device 10 except that the reinforcing material 58 and the adhesive 60 are used.

発光装置50の製造方法の補強材形成工程は、発光装置10の製造方法の補強材形成工程と異なる。しかし、発光装置50の製造方法の残りの各工程は、発光装置10の製造方法の残りの各工程と同じである。補強材形成工程では、図4(a)および図4(b)に示すように、集合基板40上に格子状に実装された複数の発光素子14の間に、接着剤60を用いて補強材58の列を格子状に接着する。このとき、補強材58が格子点で重ならなように、あらかじめ補強材58の長さを調整しておく。   The reinforcing material forming step of the manufacturing method of the light emitting device 50 is different from the reinforcing material forming step of the manufacturing method of the light emitting device 10. However, the remaining steps of the manufacturing method of the light emitting device 50 are the same as the remaining steps of the manufacturing method of the light emitting device 10. In the reinforcing material forming step, as shown in FIGS. 4A and 4B, a reinforcing material is used by using an adhesive 60 between the plurality of light emitting elements 14 mounted in a lattice pattern on the collective substrate 40. Adhere 58 rows in a grid. At this time, the length of the reinforcing material 58 is adjusted in advance so that the reinforcing material 58 does not overlap at the lattice points.

補強材58としては、例えば、厚さ0.1mmの基板の銅箔部分をエッチングにより除去した樹脂板が使用できる。樹脂板は、耐熱性がある透明な樹脂から作製することが好ましい。金型によるプレス加工によって樹脂板を作製してもよい。接着剤60は、あらかじめ樹脂板の片面に設けておいてもよいし、スクリーン印刷によって接着剤60を集合基板40上に印刷しておいてもよい。   As the reinforcing material 58, for example, a resin plate obtained by removing a copper foil portion of a substrate having a thickness of 0.1 mm by etching can be used. The resin plate is preferably made from a heat-resistant transparent resin. A resin plate may be produced by pressing with a mold. The adhesive 60 may be provided in advance on one side of the resin plate, or the adhesive 60 may be printed on the collective substrate 40 by screen printing.

素子搭載工程では、図4(c)に示すように、回路基板26の上に発光素子14を設置して、発光素子14の上面電極と回路基板24を、ワイヤー32で電気的に接続する。封止工程では、図5(d)に示すように、複数の発光素子14と補強材58の列を封止材で覆う。溝形成工程では、図5(e)に示すように、ハーフダイシングによって、補強材58の列の中央部に沿って、補強材58の最小幅より小さい幅を備える直方体形状の複数の溝42を、集合基板40の上部、補強材58、および封止材20に渡って形成する。   In the element mounting step, as shown in FIG. 4C, the light emitting element 14 is installed on the circuit board 26, and the upper surface electrode of the light emitting element 14 and the circuit board 24 are electrically connected by the wire 32. In the sealing step, as shown in FIG. 5D, the row of the plurality of light emitting elements 14 and the reinforcing material 58 is covered with the sealing material. In the groove forming step, as shown in FIG. 5 (e), a plurality of rectangular parallelepiped grooves 42 having a width smaller than the minimum width of the reinforcing material 58 are formed along the central portion of the row of the reinforcing material 58 by half dicing. The upper portion of the collective substrate 40, the reinforcing material 58, and the sealing material 20 are formed.

光反射材形成工程では、図6(f)に示すように、複数の溝42内に光反射材16を充填する。分離工程では、図6(g)に示すように、複数の発光素子14の間を切断して、個々の発光装置50に分離する。本実施形態の発光装置50の製造方法は、厚さが0.1mm以下の薄い集合基板40を用いる場合に特に適している。このとき、補強材18の厚さが0.1mm以上あれば、光反射材16が基板12に密着する。   In the light reflecting material forming step, the light reflecting material 16 is filled into the plurality of grooves 42 as shown in FIG. In the separation step, as shown in FIG. 6G, the plurality of light emitting elements 14 are cut and separated into individual light emitting devices 50. The manufacturing method of the light emitting device 50 of the present embodiment is particularly suitable when the thin aggregate substrate 40 having a thickness of 0.1 mm or less is used. At this time, if the thickness of the reinforcing material 18 is 0.1 mm or more, the light reflecting material 16 adheres to the substrate 12.

図9は、従来の光反射材98の形成方法で作製した発光装置90を示している。集合基板92の厚さは0.4mm以上ある。封止材96で発光素子94を覆った後、ハーフダイシングによって集合基板92の約半分の深さまで切り込みを入れても、集合基板92の厚さが0.4mm以上あるため、光反射材98が集合基板92および封止材96に密着しており、光反射材98の強度は十分である。   FIG. 9 shows a light emitting device 90 manufactured by a conventional method of forming a light reflecting material 98. The thickness of the collective substrate 92 is 0.4 mm or more. Even if the light emitting element 94 is covered with the sealing material 96 and then cut into half the depth of the collective substrate 92 by half dicing, the thickness of the collective substrate 92 is 0.4 mm or more. The light reflecting material 98 is sufficiently strong because it is in close contact with the collective substrate 92 and the sealing material 96.

しかし、図10に示すように、基板102の厚さが0.1mmと薄くなった場合、基板102の約半分の深さまでハーフダイシングにより切り込みを入れると、基板102から封止材104が剥がれる場合があり、光反射材106の密着強度を確保することが困難となる。そこで、光反射材106の密着強度向上を目的として、図1に示すような補強材18を設ける。補強材18を設けることで薄い基板102にハーフダイシングが可能となり、光反射材106と基板102との密着強度が向上する。   However, as shown in FIG. 10, when the thickness of the substrate 102 is as thin as 0.1 mm, the encapsulant 104 is peeled off from the substrate 102 when cutting is performed by half dicing to about half the depth of the substrate 102. Therefore, it is difficult to ensure the adhesion strength of the light reflecting material 106. Therefore, for the purpose of improving the adhesion strength of the light reflecting material 106, a reinforcing material 18 as shown in FIG. 1 is provided. By providing the reinforcing material 18, half dicing can be performed on the thin substrate 102, and the adhesion strength between the light reflecting material 106 and the substrate 102 is improved.

10,50,90,100 発光装置
12 基板
12a 周縁部
12b 中心部
14 発光素子
16 光反射材
16a 内壁
18 補強材
20 封止材
22 レーザービア・フィルドめっき
24,26,28,30 回路基板
32 ワイヤー
40 集合基板
42 溝
58 補強材
60 接着剤
70 基板
72 銅ピン
74 銅インレイ基板
80 銅ポスト
82 銅ポスト基板
92 集合基板
94 LED素子
96 封止材
98 光反射材
102 基板
104 封止材
106 光反射材
10, 50, 90, 100 Light emitting device 12 Substrate 12a Peripheral part 12b Center part 14 Light emitting element 16 Light reflecting material 16a Inner wall 18 Reinforcing material 20 Sealing material 22 Laser via filled plating 24, 26, 28, 30 Circuit board 32 Wire 40 collective substrate 42 groove 58 reinforcing material 60 adhesive 70 substrate 72 copper pin 74 copper inlay substrate 80 copper post 82 copper post substrate 92 collective substrate 94 LED element 96 sealing material 98 light reflecting material 102 substrate 104 sealing material 106 light reflecting Material

Claims (10)

周縁部と、前記周縁部の内側の中心部とを備え、前記周縁部の少なくとも一部の上面が前記中心部の上面より低い基板と、
前記中心部の上に設けられた発光素子と、
前記中心部より低い前記周縁部の上に設けられた光反射材と、
前記光反射材の内壁および前記中心部の上面に接するように設けられた補強材と、
前記光反射材の内側で前記発光素子および前記補強材を覆う封止材と、
を有する発光装置であって、
前記基板の上面に対する前記補強材の接着力が、前記基板の上面に対する前記封止材の接着力より大きい発光装置。
A substrate including a peripheral portion and a central portion inside the peripheral portion, wherein the upper surface of at least a part of the peripheral portion is lower than the upper surface of the central portion;
A light emitting device provided on the central portion;
A light reflecting material provided on the peripheral edge lower than the center;
A reinforcing material provided so as to be in contact with the inner wall of the light reflecting material and the upper surface of the central portion;
A sealing material that covers the light emitting element and the reinforcing material inside the light reflecting material;
A light emitting device comprising:
The light emitting device, wherein an adhesive force of the reinforcing material to the upper surface of the substrate is larger than an adhesive force of the sealing material to the upper surface of the substrate.
請求項1において、
前記中心部の厚さが0.1mm以下である発光装置。
In claim 1,
A light emitting device having a thickness of the central portion of 0.1 mm or less.
請求項1または2において、
前記補強材が波長970nmの光を90%以上反射する発光装置。
In claim 1 or 2,
A light emitting device in which the reinforcing material reflects 90% or more of light having a wavelength of 970 nm.
請求項1または2において、
前記補強材が透光性を備える発光装置。
In claim 1 or 2,
A light emitting device in which the reinforcing material has translucency.
請求項1から4のいずれかにおいて、
前記補強材が、前記基板から離れるほど幅が狭くなる複数の補強部材から構成されている発光装置。
In any one of Claim 1-4,
The light emitting device, wherein the reinforcing material is composed of a plurality of reinforcing members whose widths become narrower as they move away from the substrate.
集合基板上に格子状に実装された複数の発光素子の間に、補強材の列を少なくとも平行に形成する補強材形成工程と、
前記複数の発光素子と前記補強材の列を封止材で覆う封止工程と、
少なくとも平行に形成された前記補強材の中央部に沿って、前記補強材の最小幅より小さい幅を備える直方体形状の複数の溝を、前記集合基板の上部、前記補強材、および前記封止材に渡って形成する溝形成工程と、
前記複数の溝内に光反射材を充填する光反射材形成工程と、
前記複数の発光素子の間を切断して、個々の発光装置に分離する分離工程と、
を有する発光装置の製造方法であって、
前記集合基板の上面に対する前記補強材の接着力が、前記集合基板の上面に対する前記封止材の接着力より大きく、
前記分離工程が、前記光反射材の幅より小さい幅で、前記複数の光反射材の中央部に沿って前記複数の発光素子の間を切断する過程を含む発光装置の製造方法。
A reinforcing material forming step of forming at least parallel rows of reinforcing materials between the plurality of light emitting elements mounted in a grid pattern on the aggregate substrate;
A sealing step of covering the row of the plurality of light emitting elements and the reinforcing material with a sealing material;
A plurality of rectangular parallelepiped-shaped grooves having a width smaller than the minimum width of the reinforcing material, at least along the central portion of the reinforcing material formed in parallel, the upper portion of the collective substrate, the reinforcing material, and the sealing material A groove forming step to be formed over,
A light reflecting material forming step of filling the light reflecting material in the plurality of grooves;
A separation step of cutting between the plurality of light emitting elements and separating them into individual light emitting devices;
A method of manufacturing a light emitting device having
The adhesive force of the reinforcing material to the upper surface of the collective substrate is greater than the adhesive force of the sealing material to the upper surface of the collective substrate,
The method of manufacturing a light emitting device, wherein the separating step includes a step of cutting between the plurality of light emitting elements along a central portion of the plurality of light reflecting materials with a width smaller than a width of the light reflecting material.
請求項6において、
前記補強材形成工程では、前記複数の発光素子の間に、前記補強材の列を格子状に形成し、
前記溝形成工程では、前記格子状に形成された補強材の中央部に沿って前記複数の溝を形成する発光装置の製造方法。
In claim 6,
In the reinforcing material forming step, a row of the reinforcing material is formed in a lattice shape between the plurality of light emitting elements,
In the groove forming step, a method of manufacturing a light emitting device, wherein the plurality of grooves are formed along a central portion of the reinforcing material formed in the lattice shape.
請求項6または7において、
前記補強材が、第一補強部材と、前記第一補強部材の最小幅より小さい最大幅を備える第二補強部材との積層部を備え、
前記補強材形成工程が、前記第一補強部材を形成し、その後、前記第一補強部材の上に前記第二補強部材を形成する過程を含む発光装置の製造方法。
In claim 6 or 7,
The reinforcing member comprises a laminated portion of a first reinforcing member and a second reinforcing member having a maximum width smaller than the minimum width of the first reinforcing member,
The manufacturing method of the light-emitting device including the process in which the said reinforcement material formation process forms the said 1st reinforcement member, and forms the said 2nd reinforcement member on the said 1st reinforcement member after that.
請求項8において、
前記集合基板の厚さが0.1mm以下で、前記補強材の高さが0.1mm以上である発光装置の製造方法。
In claim 8,
A method for manufacturing a light emitting device, wherein the aggregate substrate has a thickness of 0.1 mm or less and the reinforcing material has a height of 0.1 mm or more.
請求項6または7において、
前記集合基板の厚さが0.1mm以下であり、
前記補強材が厚さ0.1mm以上の樹脂板であり、
前記補強材形成工程では、接着剤により前記集合基板に前記樹脂板を貼り付ける発光装置の製造方法。
In claim 6 or 7,
The aggregate substrate has a thickness of 0.1 mm or less,
The reinforcing material is a resin plate having a thickness of 0.1 mm or more;
In the reinforcing material forming step, a method for manufacturing a light emitting device, wherein the resin plate is attached to the aggregate substrate with an adhesive.
JP2016152445A 2016-08-03 2016-08-03 Light emitting device Active JP6782579B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016152445A JP6782579B2 (en) 2016-08-03 2016-08-03 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016152445A JP6782579B2 (en) 2016-08-03 2016-08-03 Light emitting device

Publications (2)

Publication Number Publication Date
JP2018022758A true JP2018022758A (en) 2018-02-08
JP6782579B2 JP6782579B2 (en) 2020-11-11

Family

ID=61164597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016152445A Active JP6782579B2 (en) 2016-08-03 2016-08-03 Light emitting device

Country Status (1)

Country Link
JP (1) JP6782579B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019165122A (en) * 2018-03-20 2019-09-26 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
CN110299352A (en) * 2018-03-22 2019-10-01 日亚化学工业株式会社 Light emitting device
JP2019176081A (en) * 2018-03-29 2019-10-10 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
CN110707202A (en) * 2018-07-09 2020-01-17 日亚化学工业株式会社 Light emitting device and method for manufacturing the same
KR102728058B1 (en) * 2018-03-22 2024-11-07 니치아 카가쿠 고교 가부시키가이샤 Light emitting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359356U (en) * 1986-10-06 1988-04-20
JP2002368281A (en) * 2001-06-12 2002-12-20 Citizen Electronics Co Ltd Method of manufacturing light-emitting diode
WO2009066430A1 (en) * 2007-11-19 2009-05-28 Panasonic Corporation Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
US20130113009A1 (en) * 2011-11-09 2013-05-09 Samsung Electronics Co., Ltd. Method of manufacturing light emitting device package
JP2013089717A (en) * 2011-10-17 2013-05-13 Rohm Co Ltd Led module
JP2015002317A (en) * 2013-06-18 2015-01-05 ローム株式会社 Led light source module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359356U (en) * 1986-10-06 1988-04-20
JP2002368281A (en) * 2001-06-12 2002-12-20 Citizen Electronics Co Ltd Method of manufacturing light-emitting diode
WO2009066430A1 (en) * 2007-11-19 2009-05-28 Panasonic Corporation Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
JP2013089717A (en) * 2011-10-17 2013-05-13 Rohm Co Ltd Led module
US20130113009A1 (en) * 2011-11-09 2013-05-09 Samsung Electronics Co., Ltd. Method of manufacturing light emitting device package
JP2015002317A (en) * 2013-06-18 2015-01-05 ローム株式会社 Led light source module

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019165122A (en) * 2018-03-20 2019-09-26 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
US11715819B2 (en) 2018-03-20 2023-08-01 Nichia Corporation Light emitting device and method of manufacturing light emitting device
US10763403B2 (en) 2018-03-20 2020-09-01 Nichia Corporation Light emitting device and method of manufacturing light emitting device
US11316080B2 (en) 2018-03-20 2022-04-26 Nichia Corporation Light emitting device and method of manufacturing light emitting device
JP7089159B2 (en) 2018-03-22 2022-06-22 日亜化学工業株式会社 Light emitting device
CN110299352A (en) * 2018-03-22 2019-10-01 日亚化学工业株式会社 Light emitting device
JP2019169557A (en) * 2018-03-22 2019-10-03 日亜化学工業株式会社 Light-emitting device
KR102728058B1 (en) * 2018-03-22 2024-11-07 니치아 카가쿠 고교 가부시키가이샤 Light emitting device
US10825802B2 (en) 2018-03-22 2020-11-03 Nichia Corporation Light emitting device
US11605617B2 (en) 2018-03-22 2023-03-14 Nichia Corporation Light emitting device
JP2019176081A (en) * 2018-03-29 2019-10-10 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
JP7082279B2 (en) 2018-03-29 2022-06-08 日亜化学工業株式会社 Light emitting device and its manufacturing method
JP2020013986A (en) * 2018-07-09 2020-01-23 日亜化学工業株式会社 Light emitting device and method of manufacturing the same
JP7348478B2 (en) 2018-07-09 2023-09-21 日亜化学工業株式会社 Light emitting device and its manufacturing method
CN110707202A (en) * 2018-07-09 2020-01-17 日亚化学工业株式会社 Light emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
JP6782579B2 (en) 2020-11-11

Similar Documents

Publication Publication Date Title
JP6278101B2 (en) Light emitting device
TWI462343B (en) Light emitting device
JP4615981B2 (en) Light emitting diode and manufacturing method thereof
JP6217711B2 (en) Method for manufacturing light emitting device
JP5980577B2 (en) Side-illuminated LED light-emitting device and method for manufacturing side-illuminated LED light-emitting device
JP5906038B2 (en) Light emitting element
CN108365075B (en) Wafer level packaging light-emitting device with inclined wafer reflection structure and manufacturing method thereof
JP2017069368A (en) Method of manufacturing light-emitting device
JP5720759B2 (en) Optical semiconductor device
JP6782579B2 (en) Light emitting device
JP5837775B2 (en) Semiconductor light emitting device
WO2011016433A1 (en) Method for manufacturing led light emitting device
JP2017183427A (en) Light-emitting device
JP2013183020A (en) Semiconductor light-emitting device and method for manufacturing the same
JP6366337B2 (en) LED light emitting device and manufacturing method thereof
JP2009054895A (en) Light-emitting element
JP6717400B2 (en) Light emitting module
KR100808644B1 (en) Lamp having surface mounted light emitting diode and manufacturing method of the same
KR20160040384A (en) Light emitting device
JP2008124297A (en) Light-emitting device
KR101763893B1 (en) Light source unit and method for manufacturing the same
JP2018195758A (en) Semiconductor light-emitting device and method of manufacturing the same
KR101533068B1 (en) PCB and Semiconductor module including the same
TWI688806B (en) Linear beam shaped light emitting device, backlight module using the same
KR20110110608A (en) Light emitting device packag and method for fabricating thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200728

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200916

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200929

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201020

R150 Certificate of patent or registration of utility model

Ref document number: 6782579

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250