CN110364608B

CN110364608B - Wafer level linear light source light emitting device

Info

Publication number: CN110364608B
Application number: CN201810254467.7A
Authority: CN
Inventors: 陈杰; 张嘉显
Original assignee: Maven Optronics Co Ltd
Current assignee: Maven Optronics Co Ltd
Priority date: 2018-03-26
Filing date: 2018-03-26
Publication date: 2022-02-25
Anticipated expiration: 2038-03-26
Also published as: CN110364608A

Abstract

The invention provides a chip-level line-type light source light-emitting device, which comprises a substrate, a plurality of flip-chip LED chips, a chip-level packaging structure and a reflecting structure; the LED chips, the package structure and the reflection structure are all arranged on the substrate, the package structure partially covers the LED chips, and the reflection structure partially covers the package structure and the LED chips, so that the side face of the package structure is taken as a main light-emitting face or the top face of the package structure is taken as a main light-emitting top face, wherein the package structure comprises a light-permeable material and/or a photoluminescence material. Therefore, the first light beam provided by the LED chips can be guided to the packaging structure by the reflection structure and then scattered out from the main light-emitting surface, so as to form a linear light type light-emitting device of monochromatic light or white light.

Description

Wafer level linear light source light emitting device

Technical Field

The present invention relates to a light emitting device, and more particularly, to a light emitting device with a chip-level linear light source.

Background

At present, an LED backlight module is widely used in a display of an electronic product such as a television, a smart phone, and the like, and generally includes a light guide plate and an LED light source module, where the LED light source module is disposed beside a side surface (hereinafter referred to as a light incident surface) of the light guide plate and emits a light beam toward the light incident surface. More specifically, the LED light source module includes an elongated substrate and a plurality of light emitting devices having LED chips, the light emitting devices being electrically connected to the substrate and spaced apart from each other. Because the LED chips are discontinuously disposed on the substrate, the LED chip spacing has a weak light beam intensity, in other words, the light beam intensity provided by the LED light source module is not continuously and uniformly distributed in the length direction of the backlight module, which results in a dark region (dark spot) of the light guide plate; the dark area may affect the uniformity of the light intensity of the light guide plate.

In order to improve the dark area of the light guide plate, the distance between the light emitting device and the light incident surface of the light guide surface (i.e., the light mixing distance) needs to be large enough, and the light emitting device and the light incident surface cannot be tightly attached. However, since the display of the electronic product is thinned and has no frame, the backlight module has a limited space for mixing light, and if the light mixing distance between the LED light source module and the light incident surface of the light guide plate needs to be reduced, the dark area of the light guide plate will be increased.

On the other hand, the thickness of the backlight module becomes thinner and thinner, and in the thinned backlight module, if the LED chip included in the LED light source module is of a forward-type (top-view) structure (i.e. the main light emitting surface and the electrode surface are parallel to each other), the LED light source module substrate needs to vertically turn the LED light source, so that the main light emitting top surface of the forward-type LED faces the light incident surface of the thin light guide plate, and the miniaturized LED light source module and the light incident surface of the thin light guide plate are not easy to be aligned precisely, which causes light leakage.

Therefore, it is an objective of the present invention to provide a light guide plate that can maintain a small size of an LED light source module, provide a linear and uniform light distribution of a light beam, and improve a dark area of the light guide plate when the LED light source module is used as a frameless display and a thinned backlight module thereof.

Disclosure of Invention

An objective of the present invention is to provide a linear light source lighting device, which can provide a linearly distributed light pattern. Another objective of the present invention is to provide a linear light source device for effectively improving dark space formation of a light guide plate when the linear light source device is applied to a backlight module. Another objective of the present invention is to provide a linear light source device, wherein the main light emitting surface of the linear light source device can be perpendicular to the electrode assembly of the LED chip, so that the linear light source device is a side light emitting type, and the alignment of the light guide plate is easy to avoid light leakage.

To achieve the above object, a lateral light emitting wafer level (CSP) line type light source device of the present invention comprises: a substrate including a surface defining a first horizontal direction and a second horizontal direction perpendicular to each other; a plurality of flip chip LED chips arranged on the surface of the substrate along the first horizontal direction, wherein each of the LED chips comprises an upper surface, a lower surface opposite to the upper surface, a first elevation, a second elevation and an electrode group, wherein the first elevation and the second elevation are arranged in parallel and separated along the second horizontal direction, and are respectively connected with the upper surface and the lower surface, and the electrode group is arranged on the lower surface; the wafer level packaging structure is arranged on the surface of the substrate and covers the second vertical surfaces of the LED chips, wherein the wafer level packaging structure comprises a top surface and a main light-emitting side surface, and the main light-emitting side surface and the second vertical surfaces of the LED chips are arranged in parallel along the second horizontal direction, are separated and are vertical to the wafer electrode group; and a reflection structure disposed on the surface of the substrate, covering the first vertical surfaces of the LED chips, the upper surfaces of the LED chips and the top surface of the wafer level package structure, and exposing the second vertical surfaces of the LED chips and the main light-emitting side surface of the wafer level package structure.

To achieve the above object, the present invention provides a backlight module, comprising: the wafer level linear light source light-emitting device capable of emitting light laterally; and a light guide plate, the light guide plate comprising a light incident surface, a light emergent surface, a backlight surface and a reflective layer, the light incident surface facing the main light emergent surface of the wafer level linear light source light-emitting device, the light incident surface connecting the light emergent surface and the backlight surface, and the reflective layer disposed on the backlight surface.

To achieve the above object, another wafer level line light source emitting device for forward light emission according to the present invention comprises: a substrate including a surface, the surface defining a first horizontal direction and a second horizontal direction perpendicular to each other and a normal direction; a plurality of flip chip LED chips arranged on the surface of the substrate along the first horizontal direction, wherein each LED chip has an upper surface, a lower surface opposite to the upper surface, a plurality of vertical surfaces and an electrode group, the vertical surfaces are respectively connected with the upper surface and the lower surface, and the electrode group is arranged on the lower surface; the wafer level packaging structure is arranged on the surface of the substrate and covers the upper surfaces and/or the vertical surfaces of the LED chips, wherein the wafer level packaging structure comprises a main light-emitting top surface and a plurality of side surfaces which are connected, and the main light-emitting top surface and the upper surfaces of the LED chips are arranged in parallel along the normal direction, are separated and are parallel to the chip electrode group; and a reflection structure disposed on the surface of the substrate, covering the side surfaces of the wafer level package structure and the vertical surfaces of the LED chips along the first horizontal direction and the second horizontal direction, and exposing the main light-emitting top surface of the wafer level package structure and the upper surface of the LED chips.

To achieve the above object, the present invention provides a backlight module, comprising: the wafer level linear light source light-emitting device capable of emitting light in the forward direction; and a light guide plate, the light guide plate includes a light incident surface, a light emergent surface, a backlight surface and a reflective layer, the light incident surface is a main light emergent top surface facing the wafer level linear light source light emitting device, the light incident surface is connected with the light emergent surface and the backlight surface, and the reflective layer is disposed on the backlight surface.

Therefore, the light beams provided by the LED chips can form a continuous light mixing space between the reflection structures, so that the main light-emitting side surfaces (or the main light-emitting top surfaces) correspond to areas without light emission between the LED chips, and the continuous uniform light beams with linear distribution light types can be formed by reflecting light through the reflection structures. When the linear light source light-emitting device is applied together with a light guide plate to form a backlight module, light beams with linear light distribution shapes can uniformly enter the light incident surface of the light guide plate so as to reduce or improve the formation of dark areas of the light incident surface.

On the other hand, the linear light source light emitting device can be a side light emitting device which forms light beams from the main light emitting side surface, and when the linear light source light emitting device is applied to a side light incoming type backlight module, the miniaturized LED light source module and the light incoming surface of the thin light guide plate can be easily and accurately aligned, and light leakage is avoided.

In order to make the aforementioned objects, features and advantages more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A and 1B are a side view and a front view of a linear light source lighting device according to a 1 st preferred embodiment of the present invention;

FIG. 1C is a cross-sectional view of the linear light source lighting device shown in FIG. 1A;

FIG. 1D is a cross-sectional view of another aspect of a linear light source lighting device according to embodiment 1 of the present invention;

fig. 1E and 1F are a front view and a cross-sectional view of a linear light source lighting device according to a 1 st preferred embodiment of the present invention;

fig. 2A to 2E are schematic views illustrating steps of manufacturing the linear light source lighting device shown in fig. 1A;

fig. 3A and 3B are a side view and a front view of a linear light source lighting device according to embodiment 2 of the present invention;

FIG. 3C is a front view of another aspect of a linear light source lighting device according to embodiment 2 of the present invention;

FIG. 4 is a schematic diagram of a manufacturing process of the linear light source lighting device shown in FIG. 3A;

fig. 5A and 5B are a side view and a cross-sectional view of a linear light source lighting device according to embodiment 3 of the present invention;

FIG. 5C is a cross-sectional view of another aspect of a linear light source lighting device according to embodiment 3 of the present invention;

FIGS. 6A to 6E are schematic views illustrating steps of manufacturing the linear light source lighting device shown in FIG. 5A;

fig. 7A and 7B are a side view and a cross-sectional view of a linear light source lighting device according to a 4 th preferred embodiment of the present invention;

fig. 8A to 8D are schematic views illustrating steps of manufacturing the linear light source lighting device shown in fig. 7A;

fig. 9A to 9C are a top view and two cross-sectional views of a linear light source lighting device according to the 5 th preferred embodiment of the invention;

FIG. 9D is a cross-sectional view of another aspect of a linear light source lighting device according to the 5 th preferred embodiment of the present invention;

fig. 10A to 10C are schematic views illustrating steps of manufacturing the linear light source lighting device shown in fig. 9A;

fig. 11A to 11C are a top view and two cross-sectional views of a linear light source lighting device according to the 6 th preferred embodiment of the invention;

FIG. 12 is a schematic view of a manufacturing process of the linear light source lighting device shown in FIG. 11A;

fig. 13A and 13B are two cross-sectional views of a linear light source lighting device according to a 7 th preferred embodiment of the invention;

fig. 14A to 14D are schematic views illustrating steps of manufacturing the linear light source lighting device shown in fig. 13A;

FIGS. 15A and 15B are side and top views of a backlight module according to a preferred embodiment of the invention; and

fig. 16A and 16B are a side view and a top view of another backlight module according to a preferred embodiment of the invention.

[ notation ] to show

1A, 1B backlight module

Line light source light emitting

device

10A, 10B, 10C, 10D, 10E, 10F, 10G, and light emitting device

Device for placing

11 substrate

111 surface

12LED wafer

121 upper surface

122 lower surface

1231 ~ 1234 facade

1231 first facade

1232 second facade

1233 third facade

1234 fourth facade

124 electrode group

13. 13' wafer level packaging structure and packaging structure

13A, 13A' photoluminescence part

13B, 13B' light transmission part

13B1 side and outer side

131 top surface

131' main light-emitting top surface and light-emitting top surface

132 major light exit side, light exit side

132' side surface

133. 133A, 133B, 142 recess portion

14. 14' reflecting structure

141 reflective side surface

15 reflective layer

20 light guide plate

21 light incident surface

22 light-emitting surface

23 backlight surface

24 reflective layer

First horizontal direction, horizontal direction of D1

Second horizontal direction, horizontal direction D2

Normal direction and thickness direction of D3

L light beam

Detailed Description

Referring to fig. 1A to 1C, which are schematic views of a light emitting device 10A according to a first preferred embodiment of the invention 1, the light emitting device 10A can provide a light pattern with a linear uniform distribution to reduce or prevent a dark area from being formed on a light incident surface 21 (as shown in fig. 15A) of a light guide plate 20. The light-emitting device 10A may include a substrate 11, a plurality of LED chips 12, a chip-level package structure 13 (hereinafter, referred to as package structure 13), and a reflective structure 14. The technical contents of each element are described in sequence as follows.

The substrate 11 is used for disposing other components of the light emitting device 10A thereon, and can be a good light-reflecting one to prevent the light beam from penetrating through the substrate 11. The substrate 11 may include a Printed Circuit Board (PCB), a ceramic substrate, a glass substrate, a metal-core PCB, or other types of substrates known in the art, and the substrate 11 of the present embodiment is exemplified by a PCB. In terms of shape, the substrate 11 may be a strip-shaped plate, and may include a surface 111, where the surface 111 is rectangular, and defines a first horizontal direction D1 (hereinafter, referred to as horizontal direction D1) and a second horizontal direction D2 (hereinafter, referred to as horizontal direction D2) that are perpendicular to each other; the horizontal direction D1 is the length direction of the surface 111, and the horizontal direction D2 is the width direction of the surface 111. The horizontal directions D1 and D2 are both perpendicular to the normal direction (thickness direction) D3 of the surface 111.

The LED chips 12 can be disposed on the surface 111 along the horizontal direction D1 and spaced apart from each other to form an LED chip array. Each of the LED chips 12 can be a flip-chip LED chip and can include an upper surface 121, a lower surface 122, a plurality of vertical surfaces 1231-1234 and an electrode set 124; the vertical surfaces 1231-1234 include a first vertical surface 1231, a second vertical surface 1232, a third vertical surface 1233, and a fourth vertical surface 1234, wherein the electroluminescent layer of the LED chip 12 is located below the LED chip 12 and above the electrode set 124 (not shown), and the space defined by the electroluminescent layer, the upper surface 121, and the vertical surfaces 1231-1234 is made of a light-permeable substrate material (e.g., Sapphire). The height of the flip-chip LED chip 12 (corresponding to the height of the vertical surfaces 1231-1234) is not greater than 0.3mm (millimeter), 0.2mm, or 0.1 mm.

The upper surface 121 and the lower surface 122 are disposed opposite and opposite to each other, and the upper surface 121 and the lower surface 122 may be rectangular (e.g., rectangular or square). The two

vertical surfaces

1231, 1232 are parallel and spaced apart from each other along the horizontal direction D2, the two

vertical surfaces

1233, 1234 are opposite to each other along the horizontal direction D1, the vertical surfaces 1231-1234 are connected to each other to form a ring (e.g., a rectangular ring), and the vertical surfaces 1231-1234 respectively connect the upper surface 121 and the lower surface 122; in other words, the vertical surfaces 1231-1234 are formed along the edges of the upper surface 121 and the lower surface 122.

The electrode set 124 may be disposed on the lower surface 122, the electrode set 124 and the lower surface 122 may form a lower electrode surface of the LED chip 12, and the electrode set 124 includes at least two electrodes having a positive electrode and a negative electrode, so that electric energy (not shown) can be supplied into the LED chip 12 through the two electrodes to generate a first light beam (e.g., blue light). In addition, since the LED chip 12 is flip-chip type, no electrode is disposed on the upper surface 121, and the first light beam emitted therefrom can be scattered outwards from any one of the upper surface 121 and the vertical surfaces 1231 to 1234, the LED chip 12 is a light source with five-surface emitting (5-surface emitting). The electrode assembly 124 is also electrically connected to the surface 111 of the substrate 11, for example, to electrode pads, metal wires, conductive vias, etc. (not shown) on the surface 111.

The package structure 13 can be disposed on the surface 111 of the substrate 11 and at least covers the second vertical surfaces 1232 of the LED chips 12, which means that the package structure 13 is formed at least on the side of the second vertical surface 1232, can be in contact with or spaced apart from the vertical surface 1232, and is not smaller than the vertical surface 1232 in size. In the present embodiment, the package structure 13 is in contact with and directly and completely covers the vertical surface 1232. In addition, the package structure 13 can also cover the other

vertical surfaces

1231, 1233, and 1234 of the LED chip 12, and optionally also cover the upper surface 121 of the LED chip 12 (as shown in fig. 1D). In other words, the package structure 13 can cover the upper surface 121 and the vertical surfaces 1231-1234 of the LED chip 12, and preferably directly cover the surfaces. Note that, the

vertical surfaces

1233 and 1234 of the two LED chips 12 located on the left and right sides along the horizontal direction D1 may be covered and covered by the reflective structure 14 described later, instead of being covered and covered by the package structure 13.

The package structure 13 includes a top surface 131 and a main light-emitting side surface 132 (hereinafter, referred to as the light-emitting side surface 132) connected to each other, wherein the light beam generated by the LED chip 12 passes through the package structure 13 and is transmitted outward from the light-emitting side surface 132. The light-emitting side 132 is substantially parallel to the second vertical surfaces 1232 of the LED chip 12 along the horizontal direction D1 and is spaced apart along the horizontal direction D2. In other words, along the horizontal direction D2, the light-exiting side 132 is located outside the vertical surfaces 1232, and does not directly contact the vertical surfaces 1232. The substantial parallelism of the light-exiting side 132 and the vertical surface 1232 means that the two are expected to be manufactured in parallel, but the two may be slightly inclined due to the tolerance and variability of the manufacturing process; with some inclination, the light-exiting side 132 and the elevation 1232 are still considered parallel to each other.

The light-emitting side surface 132 is substantially perpendicular to the bottom electrode surface (the electrode group 124 or the bottom surface 122) of the LED chip 12 or the surface 111 of the substrate 11, i.e., the light-emitting side surface 132 is perpendicular to the bottom electrode surface (or the surface 111), but the light-emitting side surface 132 is slightly inclined with respect to the bottom electrode surface due to the tolerance and variability of the manufacturing process; at some tilt, the light-exiting side surface 132 and the lower electrode surface are still considered to be perpendicular to each other.

In addition, the package structure 13 is wafer-level-sized, which means that the package structure 13 is comparable to the LED chip array in size, for example, the height of the light-emitting side surface 132 of the package structure 13 (the dimension along the vertical direction D3) is equal to or slightly greater than the height of the LED chip array. Preferably, the height of the light-emitting side surface 132 of the package structure 13 is not greater than 1mm, and more preferably not greater than 0.5mm, 0.3mm, 0.2mm, and other wafer-level dimensions.

When the number of the LED chips 12 is larger (e.g., more than three), the length of the light-emitting side surface 132 along the direction D1 is much larger than the height along the direction D3, so that the light-emitting side surface 132 is elongated (as shown in fig. 1B).

The package structure 13 may include a photo-luminescent portion 13A for partially converting the first light beam (e.g., blue light) generated by the LED chip 12 into a second light beam and/or a third light beam (e.g., green light and/or red light); the photoluminescent part 13A may include, for example, a light-permeable resin and a photoluminescent material (phosphor or quantum dot), and the photoluminescent part 13A may directly cover the second vertical surface 1232 of the LED chip 12.

The reflective structure 14 can block and reflect the first light beam generated by the LED chip 12 to guide the first light beam to proceed toward the light-emitting side 132 of the package structure 13. In the manufacturing material, the reflective structure 14 can be made of a material containing a light-permeable resin containing optically scattering particles, such as polyphthalamide, polycyclohexanedimethanol terephthalate, epoxy resin, or silica gel, and the optically scattering particles can be titanium dioxide, boron nitride, silicon dioxide, or aluminum oxide.

The reflective structure 14 is disposed on the surface 111 of the substrate 11, and covers the first vertical surfaces 1231 of the LED chip 12, the upper surfaces 121, and the top surface 131 of the package structure 13, but exposes the second vertical surfaces 1232 of the LED chip 12 and the light-emitting side surface 132 of the package structure 13. In other words, the reflective structure 14 can directly cover the surfaces, or indirectly cover the surfaces separately, so as to block and reflect the first light beam emitted toward the surfaces; since the vertical surface 1232 of the LED chip 12 and the light-emitting side surface 132 of the package structure 13 are not covered by the reflective structure 14, the first light beam and/or the second light beam converted by the package structure 13 can be emitted from the light-emitting side surface 132 to form a light beam L scattered by the linear light source 10A.

In this embodiment, the package structure 13 does not cover the upper surface 121 of the LED chip 12, and the reflective structure 14 can directly cover the upper surface 121 and the top surface 131 of the package structure 13. In another aspect as shown in fig. 1D, the upper surface 121 of the LED chip 12 is directly covered by the package structure 13, so the reflective structure 14 indirectly covers the upper surface 121 of the LED chip 12. In another aspect (not shown), the whole package structure 13 is formed beside the second vertical surface 1232, and the reflective structure 14 directly covers the first vertical surface 1231 in addition to directly covering the top surface 131 of the package structure 13 and the upper surface 121 of the LED chip 12. On the other hand, in the horizontal direction D1, the reflective structure 14 can also directly or indirectly cover the

vertical surfaces

1233, 1234 of the two LED chips 12 on the left and right sides.

Thus, after the first light beam (e.g. blue light) emitted by the LED chip 12 enters the package structure 13 (the photoluminescence part 13A), a part of the first light beam changes wavelength (e.g. changes to yellow light) through the photoluminescence material, and another part of the first light beam maintains the original wavelength; the two portions (blue and yellow) of light are mixed to form a white light beam L (indicated by the dashed arrow in fig. 1A). In addition, the first light beam emitted from the LED chip 12 toward the upper surface 121 and the

vertical surfaces

1231, 1233, 1234 may be reflected by the reflection structure 14 and guided to the light-emitting side surface 132 not covered by the reflection structure 14 to advance, and exit from the light-emitting side surface 132 together with the first light beam emitted from the second vertical surface 1232 through the package structure 13.

It can be seen that the first light beam and/or the second light beam of the LED chip 12 can only leave from the light-exiting side 132 not covered by the reflective structure 14 and the substrate 11. In other words, the light beam L scattered by the light emitting device 10A is mainly outputted laterally, so that a lateral light emitting device can be formed.

On the other hand, the reflective structure 14 can guide a portion of the first light beam to between two adjacent LED chips 12 (between the third and fourth vertical surfaces 1233, 1234) along the horizontal direction D1, and then output the first light beam from the region corresponding to the light-emitting side surface 132 between the third and fourth

vertical surfaces

1233, 1234, so that the light-emitting side surface 132 outputs the light beam L through light mixing in the region corresponding to the two LED chips 12 except the region corresponding to the second vertical surface 1232 of the LED chips 12. In other words, the light beams provided by the LED chip 12 can form a light mixing space between the reflective structures 14, so that most of the light beams L are emitted from the light-emitting side surface 132, thereby forming a linear light pattern with uniform distribution.

Referring to fig. 1E and 1F, in another aspect of the light emitting device 10A, the light emitting device 10A may preferably include a reflective layer 15, and the reflective layer 15 may be made of a high-reflectivity metal material or a resin material, or both the reflective structure 14 and the metal material. After the LED chip 12 is disposed on the surface 111 of the substrate 11, the reflective layer 15 is disposed and formed on the surface 111 of the substrate 11, so that the reflective layer 15 does not affect the bonding between the electrode set 124 of the LED chip 12 and the electrode pads (not shown) of the substrate, and the reflective layer 15 may partially cover and cover the vertical surfaces 1231-1234 of each LED chip 12; in other words, the reflective layer 15 is disposed beside the vertical surfaces 1231-1234. Thereafter, the package structure 13 is disposed on the reflective layer 15 as a whole (indirectly disposed on the surface of the substrate 11), and the light-emitting side 132 of the package structure 13 may be perpendicular to the surface of the reflective layer 15; in addition, the reflective structure 14 may be bonded to the reflective layer 15. Thus, the reflective structure 14 and the reflective layer 15 can form a reflective cavity and effectively guide the first light beam of the LED chip 12 toward the light-emitting side 132 of the package structure 13, thereby further increasing the light-emitting efficiency of the light-emitting device 10A.

Referring to fig. 2A to 2E, a preferred method for manufacturing the linear light source light emitting device 10A is described, and the technical content of the manufacturing method can be referred to the technical content of the light emitting device 10A.

As shown in fig. 2A, a plurality of LED chips 12 are disposed on a substrate 11 at equal intervals to form an LED chip array, and two rows of LED chip arrays are taken as an example and spaced apart from each other along a horizontal direction D2; the reflective layer 15 shown in fig. 1E and 1F can be formed on the substrate 11 by spraying, printing, or molding. Thereafter, as shown in fig. 2B and 2C, the package structure 13 is formed on the substrate 11, that is, the raw material (for example, the light-permeable resin mixed with the photoluminescent material) of the package structure 13 is formed by spraying, printing, or molding, and then the raw material is cured to form the package structure 13. The formed package structure 13 at least covers the second vertical surface 1232 of the LED chip 12, and covers the other

vertical surfaces

1231, 1233, 1234. Further, the package structure 13 may be formed such that its top surface 131 is flush with the upper surface 121 of the LED chip 12, not covering the upper surface 121; alternatively, the package structure 13 is formed to have the top surface 131 higher than the upper surface 121 so as to cover the upper surface 121 (as shown in fig. 1D).

Next, as shown in fig. 2D, a portion of the package structure 13 (between the two dotted lines shown in fig. 2C) is removed along the horizontal direction D1, the portion is located beside the first vertical surface 1231 of the LED chip 12 to form a groove portion 133 beside the first vertical surface 1231; the groove portion 133 is an elongated groove extending in the horizontal direction D1. After the groove 133 is formed, the first vertical surface 1231 to be covered by the reflective structure 14 is temporarily exposed, and the side of the vertical surface 1231 may be covered by a portion of the package structure 13 or not covered by the package structure 13.

As shown in fig. 2E, a reflective structure 14 is formed on the substrate 11, the LED chip 12 and the package structure 13; that is, one material of the reflective structure 14 (for example, a light-permeable resin mixed with optically scattering particles) is formed by spraying, printing, molding, or the like. Due to the existence of the groove 133, the reflective structure 14 can cover the first and second

vertical surfaces

1231, 1232 of the LED chip 12 indirectly, in addition to the upper surface 121 of the LED chip 12 and the top surface 131 of the package structure 13. In addition, the reflective structure 14 can be formed to include a reflective side 141 spaced from the vertical surface 1231 along the horizontal direction D2; in other aspects, the reflective side surface 141 may directly cover the elevation 1231 (closely adhere to the elevation 1231), that is, the package structure 13 beside the elevation 1231 is completely removed in the previous step of forming the recessed portion 133. In addition, when the reflective structure 14 is formed, the reflective structure 14 may also cover the third and fourth

vertical surfaces

1233, 1234 of two adjacent LED chips 12 along the horizontal direction D1.

When the reflection structure 14 is completed, the two-line type light source light emitting device 10A can be formed by two rows of LED chip arrays. The reflective structures 14 of the linear light emitting devices 10A are still connected, so a cutting step is required, that is, a portion of the package structure 13 and a portion of the reflective structure 14 outside the second vertical surface 1232 are removed along the horizontal direction D1 according to the dotted line shown in fig. 2E; a portion of the substrate 11 is also cut and removed. Thus, the two light emitting devices 10A can be separated and independent from each other, and the light emitting side 132 of the package structure 13 of each light emitting device 10A is exposed.

The above is a description of the technical contents of the light emitting device 10A, and the technical contents of the line type light source light emitting device according to other embodiments of the present invention will be described next, and the technical contents (including the manufacturing method) of the light emitting device of each embodiment should be referred to each other, so the same parts will be omitted or simplified. The technical content of the various embodiments can also be applied in combination with or instead of each other.

Fig. 3A and 3B are schematic views of a light emitting device 10B according to embodiment 2 of the invention. The light emitting device 10B is different from the above-described light emitting device 10A for providing a light beam in which two colors are mixed, such as white light, at least in that: the package structure 13 is a transparent portion 13B, which can directly cover the second vertical surfaces 1232 of the LED chip 12.

Specifically, the package structure 13 does not include a photo-emission portion capable of converting the wavelength of the light beam, and includes only the light-transmitting portion 13B that does not substantially affect the wavelength of the light beam. The light-transmitting portion 13B may be made of a material of a light-transmitting resin, such as polyphthalamide, polycyclohexanedimethanol terephthalate, epoxy resin, or silicone. In this way, the wavelength of the light beam L of the LED chip 12 is not converted by the package structure 13 while passing through the package structure 13 (the light-transmitting portion 13B), so that the light-emitting device 10B can be used to provide various monochromatic lights such as red light, green light, blue light, infrared light, or ultraviolet light, and the light pattern thereof is linearly distributed.

Referring to fig. 3C, in another aspect, the package structure 13 can directly cover the upper surface 121 of the LED chip 12, so that the package structure 13 is relatively thick to provide a higher light-emitting side 132.

A preferred method of fabricating light emitting device 10B is described next, which is similar to the above-described method of fabricating light emitting device 10A, with the following differences: as shown in fig. 4, in the step of forming the package structure 13, the package structure 13 is made of a light-transmitting material such as a light-transmitting resin without mixing a photoluminescent material that affects the wavelength of a light beam, so that the package structure 13 is formed as a light-transmitting portion 13B. Then, the groove 133 and the reflective structure 14 of the package structure 13 are formed, and the package structure 13, the reflective structure 14, the substrate 11, and the like are cut.

Fig. 5A and 5B are schematic views of a light emitting device 10C according to a 3 rd preferred embodiment of the invention. Like the light emitting device 10A, the light emitting device 10C is also used to provide white light, and the

light emitting devices

10C and 10A are structurally different at least in that: the package structure 13 of the light emitting device 10C includes a photo-luminescent portion 13A and a light-transmissive portion 13B, the light-transmissive portion 13B directly covers the second vertical surface 1232 of the LED chip 12, and the photo-luminescent portion 13A directly covers one side surface (i.e., the outer side surface) 13B1 of the light-transmissive portion 13B to indirectly cover the vertical surfaces 1232 of the LED chip 12; the side surfaces 13B1 are parallel to the vertical surface 1232 along the horizontal direction D1 and are spaced apart along the horizontal direction D2.

More specifically, the transparent portion 13B and the photo-luminescent portion 13A are sequentially provided along the normal direction of the vertical surface 1232, the transparent portion 13B is surrounded and covered on the vertical surfaces 1231 to 1234, and then the photo-luminescent portion 13A covers the side surface 13B1 of the transparent portion 13B. In addition, according to the application requirement, the photoluminescent part 13A can cover the upper surface 121 (as shown in fig. 5C) of the LED chip 12 and the top surface of the light-transmitting part 13B, so that the package structure 13 includes at least two stacked layers to provide a higher light-emitting side surface 132; the transparent portion 13B may cover the upper surface 121 of the LED chip 12, and then the photo-luminescent portion 13A may cover the top surface (not shown) of the transparent portion 13.

The material for manufacturing the photo-luminescent portion 13A may be the same as the photo-luminescent portion 13A of the light-emitting device 10A, and the material for manufacturing the light-transmitting portion 13B may be the same as the light-transmitting portion 13B of the light-emitting device 10B.

Thus, after the first light beam of the LED chip 12 passes through the light-transmitting portion 13B, it still needs to pass through the photo-luminescent portion 13A to be scattered out from the light-emitting side 132, so that the light-emitting device 10C can provide a mixed light beam of white light and the like. The light-emitting side surface 132 is an outer side surface of the photo-emission portion 13A.

Referring to fig. 6A to 6E, a preferred method for manufacturing the linear light source light emitting device 10C is described, which is different from the method for manufacturing the light emitting device 10A and the light emitting device 10B in that: as shown in fig. 6A, in the step of forming the package structure 13, the light-transmitting portion 13B is formed on the substrate 11; as shown in fig. 6B, two portions of the light-transmitting portion 13B are removed along the horizontal direction D1, the two portions being located beside the first and second

vertical surfaces

1231, 1232 of the LED chip 12, respectively, to form a groove portion 133A and another groove portion 133B. When the recessed

portions

133A and 133B are formed, the light-transmitting structures 13 beside the

vertical surfaces

1231 and 1232 can be completely removed, and a small amount of the light-transmitting portions 13B can be remained to cover the

vertical surfaces

1231 and 1232.

As shown in fig. 6C, the photo luminescent portion 13A is then formed in the groove portion 133B to cover the second elevation 1232 of the LED chip 12. As shown in fig. 6D, the reflective structure 14 is formed in the recessed portion 133A to cover the first vertical surface 1231 of the LED chip 12 and cover the upper surface 121 of the LED chip 12 and the upper surface of the package structure 13. Referring to fig. 6D and 6E, according to the dotted line shown in fig. 6D, the light-transmitting portion 13B, the reflective structure 14 above the light-transmitting portion, and the substrate 11 below the light-transmitting portion 13B of each light-emitting device 10C are partially removed along the horizontal direction D1, so that the two light-emitting devices 10C are separated from each other, thereby completing the fabrication of the light-emitting device 10C.

Fig. 7A and 7B are schematic views of a light emitting device 10D according to a 4 th preferred embodiment of the invention. The light emitting device 10D is the same as the

light emitting devices

10A and 10C, and is different from the

light emitting devices

10A and 10C in at least that: the reflective structure 14 directly covers the third vertical surfaces 1233 and the fourth vertical surfaces 1234 of the LED chip 12, and also directly covers the first vertical surfaces 1231 of the LED chip 12. In other words, except for the second vertical surface 1232 (and the lower electrode surface), the other surfaces of the LED chip 12 are directly covered by the reflective structure 14, and the second vertical surface 1232 is directly covered by the package structure 13 (i.e., the photo-luminescent part 13A, but may be the transparent part 13B or include both).

Referring to fig. 8A to 8D, a preferred method of fabricating the light emitting device 10D is next described, which differs from fabricating the

light emitting devices

10A, 10B, and 10C in that: as shown in fig. 8A, after the LED chip 12 is disposed on the substrate 11, the reflective structure 14 is formed on the substrate 11 to cover the LED chip 12; then, as shown in fig. 8B, the reflective structure 14 beside the second elevation 1232 of the LED chip 12 is partially removed along the horizontal direction D1 to form a groove portion 142, and the second elevation 1232 is completely exposed in the groove portion 142 (i.e., the second elevation 1232 is one surface of the groove portion 142). Thereafter, as shown in fig. 8C, the package structure 13 is formed in the recessed portion 142, and the package structure 13 is directly wrapped around the second vertical surface 1232, and the top surface 131 is not lower than the upper surface 121 of the LED chip 12 (both may be substantially equal in height); in other words, the package structure 13 is formed without filling the groove portion 142.

As shown in fig. 8D, a portion of the reflective structure 14 is formed again in the recessed portion 142 and on the top surface 131 of the package structure 13, so that the top surface 131 of the package structure 13 is not exposed; the portion may be formed to be level with the existing portion of the reflective structure 14. Next, the reflective structure 14 beside the light-emitting side 132 of the package structure 13 and the substrate 11 therebelow are partially removed along the horizontal direction D1 according to the dotted line position shown in fig. 8D to manufacture the light-emitting device 10D.

The wafer-level line light source light emitting device according to the preferred embodiment of the present invention may be a lateral light emitting device, and the wafer-level line light source light emitting device according to another embodiment of the present invention described below may be a forward light emitting device.

Fig. 9A to 9C are schematic views illustrating a linear light source lighting device 10E according to a 5 th preferred embodiment of the invention. Like the light emitting devices 10A-10D, the light emitting device 10E also includes a substrate 11 and a plurality of LED chips 12 disposed on the substrate 11, but the light emitting device 10E includes another type of chip-on-chip package structure 13 'and a reflective structure 14'.

Specifically, the package structure 13 'is disposed on the surface 111 of the substrate 11 and covers the upper surfaces 121 of the LED chips 12, in other words, the substrate 11, the LED chips 12 and the package structure 13' are stacked in sequence along the normal direction D3 of the surface 111 of the substrate 11; the package structure 13' can further cover the vertical surfaces 1231-1234 of the LED chip 12. The package structure 13 ' includes a main light-emitting top surface 131 ' (may be simply referred to as the light-emitting top surface 131 ') and a plurality of side surfaces 132 ', wherein the light-emitting top surface 131 ' indicates that the first light beam provided by the LED chip 12 is mainly scattered out of the package structure 13 ' from the top surface, but not from the side surfaces 132 '. The light-emitting top surface 131 'is not smaller in size than the entire top surface of the LED chip array, so the light-emitting top surface 131' may be in a long strip shape. Along the horizontal direction D1, the light exit top surface 131' is disposed parallel to the upper surface 121 of the LED chip 12 and also parallel to the electrode group 124 of the LED chip 12, and is separated along the normal direction D3 of the surface 111 of the substrate 11.

The package structure 13 'may be a photo-luminescent part 13A' directly covering the upper surface 121 and the vertical surfaces 1231-1234 of the LED chip 12. In another aspect, the package structure 13 'may be a photo-luminescent film (or a patch, not shown), and the photo-luminescent film is pre-formed and then disposed (e.g., adhered) on the upper surfaces 121 of the LED chip 12, as compared to the photo-luminescent part 13A' directly formed on the substrate 11; thus, the photoluminescent film covers the upper surfaces 121 but does not cover the vertical surfaces 1231-1234.

The reflective structure 14 ' is disposed on the surface 111 of the substrate 11 and covers the side surfaces 132 ' and the vertical surfaces 1231-1234 along two horizontal directions D1 and D2, but exposes the top light surface 131 ' and the top surfaces 121 of the LED chips 12. In other words, as shown in FIG. 9B, the reflection structure 14 ' appears as a frame or a wall surrounding the LED chips 12 and the package structure 13 ' to cover the vertical surfaces 1231-1234 and the side surfaces 132 '.

Thus, the first light beams scattered toward the vertical surfaces 1231 to 1234 of the LED chip 12 can be reflected by the reflection structure 14 'and finally guided to the light-emitting top surface 131' uncovered by the reflection structure 14 ', and exit from the light-emitting top surface 131' together with the first light beams scattered toward the upper surface 121. It is noted that the light emitting device 10E mainly outputs the light beam L from the light-emitting top surface 131 ' of the package structure 13 ', and the light-emitting top surface 131 ' is disposed in parallel with the electrode set 124 of the LED chip 12, so the light emitting device 10E is a forward light emitting type light emitting device. Compared to the light emitting devices 10A-10D, the main light emitting side 132 is perpendicular to the electrode set 124 of the LED chip 12. In addition, the reflective structure 14 'can guide a portion of the light beam to between the third and fourth

vertical surfaces

1233, 1234 of the two adjacent LED chips 12, and then scatter out from the region corresponding to the light-exiting top surface 131' between the third and fourth

vertical surfaces

1233, 1234; in other words, the light-exiting top surface 131' has a relatively uniform light beam L scattered out, thereby forming a linearly distributed light pattern.

Referring to fig. 9D, in another aspect, the light emitting device 10E may include a reflective layer 15 disposed and formed on the surface 111 of the substrate 11, not shown, and not affecting the electrode set 124 of the LED chip 12 and the electrode pads of the substrate), and may partially cover and encapsulate the vertical surfaces 1231-1234 of the LED chip 12. The package structure 13 'is integrally disposed on the reflective layer 15, and the light-emitting top surface 131' and the reflective layer 15 are disposed in parallel and separated from each other; in addition, the reflective structure 14' can be connected to the reflective layer 15 to form a reflective space. Thereby, the reflective layer 15 can effectively guide the first light beam of the LED chip 12 to the package structure 13 ', and a portion of the first light beam can be converted into the second light beam and exit from the light-emitting top surface 131' together, so as to increase the light-emitting efficiency.

Referring to fig. 10A to 10C, a preferred method for manufacturing the light emitting device 10E is described. As shown in fig. 10A, after the LED chip 12 is disposed on the substrate 11, the package structure 13 '(photoluminescence part 13A') is formed on the substrate 11 to cover the LED chip 12; then, as shown in fig. 10B, two portions of the package structure 13' are partially removed along the horizontal direction D1 to form a recessed portion 133A beside the first vertical surface 1231 and another recessed portion 133B beside the second vertical surface 1232. When the package structure 13 ' beside the first and second

vertical surfaces

1231, 1232 is partially removed, the package structure 13 ' beside the first and second

vertical surfaces

1231, 1232 can be completely removed, and a little package structure 13 ' can be remained.

As shown in fig. 10C, after the

groove portions

133A and 133B are formed, the reflective structure 14 ' is formed in the

groove portions

133A and 133B to shield the first and second

vertical surfaces

1231 and 1232 of the LED chip 12, and the top surface of the reflective structure 14 ' and the light-emitting top surface 131 ' of the package structure 13 ' may be flush (the top surface of the reflective structure 14 ' may be higher or lower than the light-emitting top surface 131 ' of the package structure 13 '). Next, according to the dotted line shown in fig. 10C, the package structure 13' of each light emitting device 10E and the substrate 11 therebelow are partially removed along the horizontal direction D1, so that the light emitting devices 10E are separated, and the manufacturing of the linear light source light emitting device 10E is completed.

Please refer to fig. 11A to 11C, which are schematic diagrams of a linear light source lighting device 10F according to a 6 th preferred embodiment of the present invention. Like the light emitting device 10E, the first light beam L is output from the light-emitting top surface 131 'of the package structure 13', so the light emitting device 10F is also a forward light emitting device; in contrast, the package structure 13 ' is a transparent portion 13B ', and the transparent portion 13B ' can cover the vertical surfaces 1231-1234 and the upper surface 121 of the LED chip 12. Therefore, as shown in fig. 11B, the top surface 121 of the LED chip 12 of the light emitting device 10F should be visible in a plan view. In other aspects (not shown), the light-emitting top surface 131 ' of the package structure 13 ' may be as high as the upper surface 121, in other words, the light-transmitting portion 13B ' may not cover the upper surface 121.

Thus, the light emitting device 10F can be used to provide the first light beam of various monochromatic lights such as red light, green light, blue light, infrared light, ultraviolet light, etc., so that the first light beam is scattered out of the light exit top surface 131', and the light pattern is linearly distributed.

Referring to fig. 12, a preferred method of fabricating a light emitting device 10F is illustrated, which is similar to light emitting device 10E, but differs therefrom in that: when the package structure 13 'is formed on the substrate 11, the raw material of the package structure 13' does not include the photoluminescent material, so the package structure 13 'is a transparent portion 13B'.

Next, please refer to fig. 13A and 13B, which are schematic diagrams of a linear light emitting device 10G according to a 7 th preferred embodiment of the invention. Similar to the

light emitting devices

10E and 10F, the light beam L is also emitted from the light-emitting top surface 131 'of the package structure 13', so that the light emitting device 10G is also a forward light emitting device; the difference from the

light emitting devices

10E and 10F is that the package structure 13 ' of the light emitting device 10G includes a photoluminescent portion 13A ' and a light-transmitting portion 13B ' which are stacked structures of at least two layers.

Specifically, the transparent part 13B 'covers the vertical surfaces 1231-1234 of the LED chip 12, and the top surface of the transparent part 13B' is flush with the upper surface 121 of the LED chip 12; then, the photoluminescence portion 13A 'is disposed on the top surface of the light transmitting portion 13B' and the upper surface 121 of the LED chip 12 so as to cover the upper surface 121 of the LED chip 12. In other embodiments, the transparent portion 13B 'may cover the upper surface 121 of the LED chip 12, so that the LED chip 12 is completely covered by the transparent portion 13B'.

Thus, the first light beam of the LED chip 12 can be scattered from the light-emitting top surface 131 'only by passing through the photo-luminescent portion 13A', so that the light-emitting device 10G can provide a mixed light beam L of white light. The top surface of the photo-luminescent part 13A 'is the light-emitting top surface 131'.

Referring to fig. 14A to 14D, a preferred manufacturing method of the light emitting device 10G is described, which is different from the

light emitting devices

10E and 10F in that the formation of the light transmitting structure 13' includes two steps.

Specifically, as shown in fig. 14A, after the LED chips 12 are mounted on the substrate 11, the transparent portion 13B' is formed on the substrate 11 to cover the vertical surfaces 1231 to 1234 of the LED chips 12; then, as shown in fig. 14B, the photoluminescence portion 13A 'is formed on and covers the light transmitting portion 13B' and the upper surface 121 of the LED chip 12. As shown in fig. 14C, two portions of the package structure 13 ' are partially removed along the horizontal direction D1 to form two

groove portions

133A and 133B (the removed portions include the photo-luminescent portion 13A ' and the light-transmitting portion 13B '). Next, as shown in FIG. 14D, a reflective structure 14' is formed in the

grooves

133A and 133B to cover the vertical surfaces 1231-1234 of the LED chip 12. Then, according to the dotted line shown in fig. 14D, the package structure 13' of the light emitting device 10G and the substrate 11 therebelow are partially removed along the horizontal direction D1, so that the light emitting devices 10G are separated, and the light emitting device 10G is completed.

The backlight module according to the present invention, which includes any of the above-mentioned linear light source light emitting devices, will be described. Fig. 15A to 16B respectively show different types of

backlight modules

1A and 1B, in which the backlight module 1A includes any one of the lateral linear light source emitting devices 10A to 10D, and the backlight module 1B includes any one of the forward linear light source emitting devices 10E to 10G.

As shown in fig. 15A and 15B, the backlight module 1A includes a side-type linear light source light emitting device (taking the light emitting device 10A as an example) and a light guide plate 20, and the light guide plate 20 is disposed beside the light emitting device 10A in the second horizontal direction D2. The light guide plate 20 may be a light guide plate currently applied to other backlight modules, and the light guide plate 20 includes a light incident surface 21, a light emitting surface 22, a backlight surface 23, and a reflective layer 24, wherein the light incident surface 21 faces the light emitting side 132 of the light emitting device 10 and is parallel to the light emitting side 132. The light incident surface 21 further connects the light emitting surface 22 and the backlight surface 23, and the light emitting surface 22 and the backlight surface 23 are separated along the normal direction D3 of the substrate 11; the reflective layer 24 is disposed on the backlight surface 23, and may be made of a high-reflectivity material, for example.

Thus, the light beam L emitted from the light-emitting side surface 132 of the light-emitting device 10A can enter the light-entering surface 21 of the light guide plate 20, and then the light beam L can be reflected by the reflective layer 24 of the light guide plate 20 and uniformly output from the light-emitting surface 22, so as to provide a uniform backlight surface light source. Since the light-emitting side surface 132 of the light-emitting device 10A can provide the light beam L with a linear light pattern, the light beam L can be continuously and uniformly transmitted to the light-entering surface 21 in the first horizontal direction D1, so as to reduce the dark area on the light-entering surface 21. Thus, the distance (light mixing distance) between the light incident surface 21 of the light guide plate 20 and the light emitting side surface 132 of the light emitting device 10A can be small, and even the light incident surface 21 and the light emitting side surface 132 can be in contact.

Preferably, the area of the light-emitting side surface 132 of the light-emitting device 10A is not larger than the area of the light-entering surface 21 of the light-guiding plate 20, so that the light beam L can effectively enter the light-guiding plate 20 through the light-entering surface 21 without light leakage. In addition, in the horizontal direction D2, the substrate 11 of the light emitting device 10A can extend beyond the light exit side 132, such that the surface 111 of the substrate 11 is larger than the reflective structure 14, so that the surface 111 has an additional area for a portion of the light guide plate 20 to be directly placed on the surface 111, which can facilitate the arrangement and positioning of the light emitting device 10A and the light guide plate 20.

As shown in fig. 16A and 16B, the backlight module 1B may include a forward linear light source light emitting device (for example, the light emitting device 10E) and a light guide plate 20 as described above. In the normal direction D3 of the substrate 11 of the light emitting device 10E, the light guide plate 20 is disposed beside the light emitting device 10E, and the light incident surface 21 of the light guide plate 20 is disposed opposite to and parallel to the light emergent top surface 131' of the light emitting device 10E.

Accordingly, the light beam L emitted from the light-emitting top surface 131' of the light-emitting device 10E can enter the light-entering surface 21 of the light guide plate 20, and then the light beam L can be reflected by the reflective layer 24 of the light guide plate 20 and uniformly output from the light-emitting surface 22. In addition, the light-emitting top surface 131 'of the light-emitting device 1E can provide the uniform light beam L with a linear light shape, so the light-entering surface 21 has less dark areas, and the light-mixing distance between the light-entering surface 21 and the light-emitting top surface 131' can be smaller.

Preferably, the area of the light-emitting side surface 132 of the light-emitting device 10E is not larger than the area of the light-entering surface 21 of the light guide plate 20, so that the light beam L can effectively enter the light guide plate 20 through the light-entering surface 21. In addition, the substrate 11 of the light emitting device 10E can be vertically turned and extended to the outside of the light-emitting top surface 131 'along the normal direction D3 of the vertical section of the surface 111 of the substrate 11, so that the cross section of the substrate 11 is L-shaped, and a portion of the light guide plate 20 can be directly placed on the horizontal section of the surface 111 of the substrate 11 protruding from the light-emitting top surface 131'; in other words, the substrate 11 includes a vertical portion and a horizontal surface such that the surface 111 includes a vertical section and a horizontal section.

In the

light emitting device

10A or 10E, the reflective structure 14(14 ') may not cover the third and fourth

vertical surfaces

1233, 1234 of the LED chip 12 on the left and right sides, so that the light beams L of the LED chip 12 on the left and right sides can directly exit the package structure 13 (13') in the first horizontal direction D1. Thus, in the horizontal direction D1, the light emitting device 10A (10E) can provide a light beam with a larger light emitting angle.

In summary, the wafer level line light source light emitting device provided by the present invention can provide a uniform light beam with linear distribution, so as to reduce or improve the phenomenon that the light beam does not irradiate a portion of the light incident surface of the light guide plate to form a dark region. In addition, the wafer level linear light source light-emitting device can be a side light-emitting type, the light-emitting device can also be a forward light-emitting type, and the ultra-thin light guide plate can be matched to reduce the whole thickness of the backlight module.

The above-mentioned embodiments are only used to illustrate the implementation of the present invention and to explain the technical features of the present invention, and are not used to limit the protection scope of the present invention. Any modifications or equivalent arrangements which may occur to those skilled in the art and which fall within the spirit and scope of the appended claims should be construed as limited only by the scope of the claims.

Claims

1. A side-emitting wafer-level sized line source light emitting device, comprising:

a substrate including a surface defining a first horizontal direction and a second horizontal direction perpendicular to each other;

a plurality of LED chips arranged on the surface of the substrate along the first horizontal direction, wherein each of the LED chips comprises an upper surface, a lower surface opposite to the upper surface, a first vertical surface, a second vertical surface, a third vertical surface, a fourth vertical surface and an electrode group, wherein the first vertical surface and the second vertical surface are arranged in parallel and separated along the second horizontal direction and are respectively connected with the upper surface and the lower surface, the third vertical surface and the fourth vertical surface are arranged between the upper surface and the lower surface in parallel and are separated along the first horizontal direction, and the electrode group is arranged on the lower surface;

the wafer level size packaging structure is arranged on the surface of the substrate and comprises a connected top surface and a single and connected main light-emitting side surface, the main light-emitting side surface and the second vertical surfaces of the LED chips are arranged in parallel along the second horizontal direction, are separated and are vertical to the electrode group, and the wafer level size packaging structure also comprises a photoinduced light-emitting part which coats the second vertical surfaces of the LED chips; and

a wafer level size reflection structure disposed on the surface of the substrate, wherein the wafer level size reflection structure directly covers the upper surfaces, the first vertical surfaces, the third vertical surfaces, and the fourth vertical surfaces of the LED chips, the wafer level size reflection structure fills the space between the third vertical surfaces and the fourth vertical surfaces of the LED chips, and the wafer level size reflection structure further directly covers the top surface of the wafer level size package structure and exposes the second vertical surfaces of the LED chips and the main light-emitting side surface of the wafer level size package structure;

the wafer scale packaging structure, the wafer scale reflecting structure and the substrate form a continuous light mixing space together, so that the main light-emitting side surface provides a linear light distribution type with one-side light emission.

2. The wafer level linear light source device of claim 1, wherein the wafer level package structure further comprises a light-transmissive portion directly covering the second vertical surfaces of the LED chips, and the photo-luminescent portion directly covering a side surface of the light-transmissive portion to cover the second vertical surfaces of the LED chips; the side surface of the light transmission part and the second vertical surface of the LED chips are arranged in parallel and separated along the second horizontal direction.

3. The wafer-level line-type light source device of claim 1 or 2, further comprising a reflective layer disposed on the surface of the substrate, wherein the wafer-level package structure is disposed on the reflective layer.

4. A backlight module includes:

a side-emitting wafer-level-sized line light source light emitting device according to claim 1 or 2; and

a light guide plate, including a light incident surface, a light emergent surface, a backlight surface and a reflection layer, wherein the light incident surface is the main light emergent side surface of the wafer-level linear light source light emitting device facing the side direction light emitting, the light incident surface is connected with the light emergent surface and the backlight surface, and the reflection layer is arranged on the backlight surface.

5. The backlight module according to claim 4, wherein the light guide plate is disposed on the surface of the substrate of the side-emitting wafer-scale linear light source light emitting device.

6. The backlight module according to claim 4, wherein an area of the main light exit side surface is not larger than an area of the light incident surface of the light guide plate.

7. A wafer-level sized line source light emitting device for forward light emission, comprising:

a substrate including a surface, the surface defining a first horizontal direction and a second horizontal direction perpendicular to each other and a normal direction;

a plurality of LED chips arranged on the surface of the substrate along the first horizontal direction, wherein each of the LED chips comprises an upper surface, a lower surface opposite to the upper surface, a plurality of vertical surfaces and an electrode group, the vertical surfaces are respectively connected with the upper surface and the lower surface, and the electrode group is arranged on the lower surface;

the wafer-level size packaging structure is arranged on the surface of the substrate and covers the upper surfaces and/or the vertical surfaces of the LED chips, the wafer-level size packaging structure comprises a single main light-emitting top surface and a plurality of side surfaces which are connected, the main light-emitting top surface and the upper surfaces of the LED chips are arranged in parallel along the normal direction and are separated from each other and are parallel to the electrode group, the wafer-level size packaging structure also comprises a photoinduced light-emitting part and a light-transmitting part, the photoinduced light-emitting part directly covers the upper surfaces of the LED chips, and the light-transmitting part directly covers the vertical surfaces of the LED chips and fills the space between the vertical surfaces of the LED chips along the first horizontal direction; and

a wafer level size reflection structure disposed on the surface of the substrate, covering the side surfaces of the wafer level size package structure and the vertical surfaces of the LED chips along the first horizontal direction and the second horizontal direction, and exposing the main light-emitting top surface of the wafer level size package structure and the upper surface of the LED chips;

the wafer scale packaging structure, the wafer scale reflecting structure and the substrate form a continuous light mixing space together, so that the main light emitting top surface provides a forward light emitting linear distribution type.

8. The forward light emitting wafer level dimensional linear light source light emitting device of claim 7 wherein said photoluminescent portion is a photoluminescent membrane.

9. The wafer-level linear light source light-emitting device according to claim 7 or 8, further comprising a reflective layer disposed on the surface of the substrate, wherein the wafer-level package structure is disposed on the reflective layer.

10. A backlight module includes:

a forward light emitting wafer scale linear light source lighting device according to claim 7 or 8; and

a light guide plate, including a light incident surface, a light emergent surface, a backlight surface and a reflection layer, wherein the light incident surface is the main light emergent top surface of the wafer-level linear light source light emitting device facing the forward light, the light incident surface is connected with the light emergent surface and the backlight surface, and the reflection layer is arranged on the backlight surface.

11. The backlight module according to claim 10, wherein the surface of the substrate comprises a vertical section and a horizontal section, and the light guide plate is disposed on the horizontal section.

12. The backlight module according to claim 10, wherein an area of the main light emergent top surface is not larger than an area of the light incident surface of the light guide plate.