Description of drawings
Fig. 1 shows the side light-emitting type light-emitting assembly structural representation of prior art;
Fig. 2 shows the side light-emitting type light-emitting assembly structural profile schematic diagram of prior art;
Fig. 3, Fig. 4 show the side light-emitting type light-emitting assembly manufacturing process schematic diagram of prior art;
Fig. 5 shows the side light-emitting type light-emitting assembly structural profile schematic diagram of prior art;
Fig. 6, Fig. 7 show the side light-emitting type light-emitting assembly manufacturing process schematic diagram of prior art;
Fig. 8 shows the side light-emitting type light-emitting assembly structural profile schematic diagram of prior art;
Fig. 9, Figure 10 show the side light-emitting type light-emitting assembly manufacturing process schematic diagram of prior art;
Figure 11 shows the side light-emitting type light-emitting assembly structural profile schematic diagram of prior art;
Figure 12, Figure 13 show the side light-emitting type light-emitting assembly manufacturing process schematic diagram of prior art;
Figure 14 shows side light-emitting type light-emitting assembly structural representation of the present invention;
Figure 15 shows side light-emitting type light-emitting assembly structural profile schematic diagram of the present invention;
Figure 16 a shows side light-emitting type light-emitting assembly functional schematic of the present invention;
Figure 16 b shows side light-emitting type light-emitting assembly functional schematic of the present invention;
Figure 17 shows side light-emitting type light-emitting assembly of the present invention and makes flow chart;
Figure 18 shows side light-emitting type light-emitting assembly structural representation of the present invention;
Figure 19 a, Figure 19 b show side light-emitting type light-emitting assembly structural profile schematic diagram of the present invention;
Figure 20 shows side light-emitting type light-emitting assembly structure schematic top plan view of the present invention;
Figure 21 shows side light-emitting type light-emitting assembly structural profile schematic diagram of the present invention;
Figure 22 a, Figure 22 b show side light-emitting type light-emitting assembly structural profile schematic diagram of the present invention;
Figure 23 shows side light-emitting type light-emitting assembly structure schematic top plan view of the present invention;
Figure 24 shows side light-emitting type light-emitting assembly structural profile schematic diagram of the present invention;
Figure 25 shows the side light-emitting type light-emitting assembly optical profile figure of prior art;
Figure 26 shows the side light-emitting type light-emitting assembly optical profile figure of prior art;
Figure 27 shows side light-emitting type light-emitting assembly optical profile figure of the present invention; And
Figure 28 shows side light-emitting type light-emitting assembly optical profile figure of the present invention.
Wherein, description of reference numerals is as follows:
3 die units 4,4 ' ccf layer
10 side light-emitting type light-emitting assemblies, 12,45,103 substrates
14,40 packing colloids, 16,44 hyaline layers
20,104 semiconductor luminous assemblies, 24 holes
30 ellipsoid structure 30S cambered surfaces
34 modules, 36 frameworks
43 light-emitting diode chip for backlight unit, 46 cover layers
M2, M3 die unit 101 transparent mould members
The oval 101b ellipsoid of 101a structure space
101c phosphor 102 opaque die components
105 first electrodes, 106 second electrodes
107 reflector 108a, 108b plain conductor
109 third electrodes 110 the 4th electrode
111 center lines 112 are exhausted every line
113 unnecessary substrate portion 300 transparent colloids
The coarse rectangle exiting surface of 301 optical focus 301S
302 rectangle exiting surfaces, 601 first mold mechanisms
602 ellipsoid recesses, 603 ellipsoid spaces
701,10a colloid circulation 702,10b injection port
901 second mold mechanisms, 902 cuboid recesses
903 cuboid spaces
Embodiment
The invention provides a kind of side light-emitting type light-emitting assembly encapsulating structure and manufacture method thereof,, will in following description, propose detailed structure and technology thereof in order to understand the present invention up hill and dale.Apparently, enforcement of the present invention is not defined in the specific details that the technical staff had the knack of in semiconductor luminous assembly field.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.Preferred embodiment meeting of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also be widely used among other the embodiment, and scope of the present invention do not limited, and it is as the criterion with appending claims.
The present invention discloses a kind of side light-emitting type light-emitting assembly encapsulating structure, comprises: a substrate, semiconductor luminescence component, a transparent mould member and an opaque die component.
Above-mentioned substrate has one first and one second, first mask has one first electrode and one second electrode, second mask has a third electrode and one the 4th electrode, and wherein first electrode and third electrode electrically connect, and second electrode and the 4th electrode electrically connect.
Above-mentioned semiconductor luminous assembly is fixed on the surface of first base, and the P electrode of semiconductor luminous assembly and first electrode electrically connect, and the N electrode of semiconductor luminous assembly and second electrode electrically connect.Semiconductor luminous assembly is to be electrically connected on the substrate with routing joint (wire bonding) or flip-chip (flip chip) mode in addition.In addition, semiconductor luminous assembly can be lasing fluorescence diode chip for backlight unit, III-V compound semiconductor chip or II-VI compound semiconductor chip.
Above-mentioned transparent mould member, outward appearance roughly is 1/4th spheroids.It has a composition surface and an exiting surface, and the composition surface is in order to cover semiconductor luminous assembly.Can contain fluorescent material in the transparent mould member in addition, in order to the light beam mixed light that is produced with semiconductor luminous assembly.Or on exiting surface, form a phosphor, in order to the light beam mixed light that is produced with semiconductor luminous assembly.In addition, the material of transparent mould member can be epoxy resin (epoxy) or siloxanes (silicone gel).
Above-mentioned opaque die component is covered on the transparent mould member, makes the light-emitting assembly packaging structure outward appearance roughly be cuboid.In addition, the material of opaque die component can be polyphthalamide (PPA) or poly-butine (PPB).
Can comprise a reflector between above-mentioned transparent mould member and the opaque die component, wherein the reflector can be metallic reflector.
Above-mentioned transparent mould member and the interface between the opaque die component provide the reflecting surface of semiconductor luminous assembly to make exiting surface perpendicular to substrate.
After above-mentioned semiconductor luminous assembly institute emitted light beams is left exiting surface, can be parallel to orientation substrate and form a scattering surface, and be roughly parallel to substrate perpendicular to the light beam of exiting surface direction.
The present invention discloses a kind of method that forms light-emitting assembly packaging structure in addition, and its step comprises:
One substrate is provided, it has one first and one second, and first mask has a plurality of first electrodes and a plurality of second electrode, and second mask has a plurality of third electrodes and a plurality of the 4th electrode, wherein first electrode and third electrode electrically connect, and second electrode and the 4th electrode electrically connect.
Fixing a plurality of semiconductor luminous assemblies are on electrically-conductive backing plate, and the P electrode of a plurality of semiconductor luminous assemblies and first electrode electrically connect, and the N electrode of a plurality of semiconductor luminous assemblies and second electrode electrically connect.The fixing step of semiconductor luminous assembly is to engage or the mode of flip-chip is electrically connected on the substrate with routing in addition, and wherein above-mentioned semiconductor luminous assembly can be lasing fluorescence diode chip for backlight unit, III-V compound semiconductor chip or II-VI compound semiconductor chip.
Mode with the metaideophone moulding forms a plurality of transparent mould members, each outward appearance of a plurality of transparent mould members roughly presents 1/2nd spheroids, it has a composition surface and one 1/2nd ellipsoidal surface respectively, and the composition surface is in order to cover two semiconductor luminous assemblies in a plurality of semiconductor luminous assemblies.Can fluorescent material be mixed in the transparent mould member in advance in addition and maybe a phosphor can be formed on the exiting surface.In addition, the material of transparent mould member can be epoxy resin or siloxanes.
Mode with the metaideophone moulding forms a plurality of opaque die components, and it covers on the transparent mould member.In addition, the material of opaque die component can be polyphthalamide or poly-butine.
Can form a reflector in addition between transparent mould member and opaque die component, wherein above-mentioned reflector can be metallic reflector.
Cut a plurality of opaque die components and form a plurality of light-emitting assembly packaging structures, wherein each light-emitting assembly packaging structure has a composition surface and an exiting surface, makes each light-emitting assembly packaging structure outward appearance roughly be cuboid.
Interface between each transparent mould member and the opaque die component provides exiting surface that the reflecting surface of each semiconductor luminous assembly makes each luminescence component perpendicular to substrate.
Hereinafter with reference to accompanying drawing detailed explanation technology contents and every embodiment.
Please refer to Figure 14, the invention provides a kind of side light-emitting type light-emitting assembly 10, comprise a substrate 103, one first electrode 105, one second electrode 106, a third electrode 109, one the 4th electrode 110, semiconductor luminescence component 104, plain conductor 108a, plain conductor 108b, a transparent mould member 101 and an opaque die component 102.
Above-mentioned substrate 103 has one first and one second (not shown), wherein first mask has one first electrode 105 and one second electrode 106, second mask has a third electrode 109 and one the 4th electrode 110, wherein first electrode 105 electrically connects with third electrode 109, and second electrode 106 and the 4th electrode 110 electrically connect.The first above-mentioned electrode 105 is the P electrode with third electrode 109, and second electrode 106 and the 4th electrode 110 are the N electrode.
Above-mentioned semiconductor luminous assembly 104 is arranged at first, and is connected with first electrode 105 and second electrode 106 respectively by plain conductor 108a and plain conductor 108b, or with the electrode on the method connection substrate 103 of flip-chip.
Above-mentioned in addition substrate 103, semiconductor luminous assembly 104, plain conductor 108a, plain conductor 108b, part first electrode 105 are covered by transparent mould member 101 with part second electrode 106, and wherein coverage is a half elliptic 101a and forms an ellipsoid structure space 101b on substrate 103.
Above-mentioned opaque die component 102 is covered on substrate 103 and the transparent mould member 101, and the scope of its covering is the surface of substrate 103 and ellipsoid structure 101b.
Above-mentioned substrate 103 can be metal core printed circuit board (PCB) (mental core printed circuit board, MCPCB), ceramic substrate (ceramic substrate) or ultrathin substrate, wherein the patent of above-mentioned ultrathin substrate is filed an application by Advanced Development Photoelectric Co., Ltd., its TaiWan, China number of patent application is 096126300, Application No. is 12/173,763.Above-mentioned ultrathin substrate has two kinds of kenels, and a kind of is to make outer electrode or contact directly expose adhesive material, and does not need a printed circuit board (PCB) to transmit electric signal between between crystal grain and outer electrode.The method is that semiconductor luminous assembly chip and plain conductor are bonded on the temporary substrate, then injects packing colloid in substrate surface and fixedly semiconductor luminous assembly, plain conductor and electrode.Then remove temporary substrate, make electrode or contact directly expose adhesive material, dwindle the volume of encapsulating structure thus; Another kind of ultrathin substrate is a composite base plate, and its structure comprises the insulation film and second conductive layer of first conductive layer, a plurality of open-works.By special construction, make that the thickness of assembly is thinner and save shared space.Above-mentioned two kinds of ultrathin substrates, its detailed content all is recorded in the summary of the invention, please refer to it.Utilize above-mentioned two types ultrathin substrate, can make encapsulating structure thickness of the present invention between 0.2~0.3mm, save shared space and can remove the problem of poor heat radiation.
As previously mentioned, please refer to shown in Figure 15 tangent plane structural representation, transparent mould member 101 is attached to substrate 103 surfaces and is covered on the semiconductor luminous assembly 104, and form an ellipsoid structure space 101b in substrate 103 surfaces, wherein ellipsoid structure space 101b is 1/4th of a complete ellipsoid structure.Can attach one deck phosphor (phosphor) 101c in the exiting surface of transparent mould member 101 in addition.
Above-mentioned transparent mould member 101 can be mixed with color fluorescent material (fluorescent powder) in wherein, makes the side direction light colour mixture that transmits.Suppose that in the process of injecting colloid transparent mould member 101 inner fluorescent material skewness produce the even light of irregular colour when causing light to penetrate structure.At this moment, the phosphor 101c that attaches one deck and fluorescent material same color can make the light that transmits exiting surface produce the light of an even color in the exiting surface of transparent mould member 101.
Semiconductor luminous assembly 104 as mentioned above, the invention provides an embodiment and produces a side lighting-out tpye luminescence component that emits white light, for example can make above-mentioned semiconductor luminous assembly 104 be the semiconductor chip of nitride, so that can produce blue-light source.Simultaneously yellow fluorescent powder is being mixed equably in transparent mould member 101, when above-mentioned blue light light when semiconductor luminous assembly 104 scatters and sees through transparent mould member 101 structures, can with the yellow fluorescent powder colour mixture in the transparent mould member 101, thereby produce the side lighting-out tpye luminescence component of a white light.104 emitted light beams of above-mentioned semiconductor luminous assembly are after leaving exiting surface, and the light beam that wherein is parallel to substrate 103 directions has the angle of diffusion, and similarly the light beam perpendicular to the exiting surface direction can be parallel to substrate 103 ejaculations.
The function of foregoing transparent mould member 101 has also comprised protection internal semiconductor luminescence component 104.Because transparent mould member 101 is on substrate 103, and fully contain semiconductor luminous assembly 104, plain conductor 108a and plain conductor 108b.When side light-emitting type light-emitting assembly 10 structures are born external force, the transparent mould member 101 of inside configuration can influence than the more Zao external force of bearing of semiconductor luminous assembly 104.And the external force of the first absorption portion of transparent mould member 101 structures energy makes external force reduce for the influence of internal semiconductor luminescence component 104, plain conductor 108a and plain conductor 108b.Therefore, can avoid semiconductor luminous assembly 104 to avoid stress extruding and damage, even can also avoid dust accretions or other external environment factor and influence its function.
Foregoing opaque die component 102 is attached on the substrate 103 and covers transparent mould member 101, and opaque die component 102 is a rectangular structure.Above-mentioned opaque die component 102 can form a reflectance coating with the joint face of transparent mould member 101, for example the silver metal film.This silver metal film that is attached on the opaque die component 102 can reflex to the light that semiconductor luminous assembly 104 sends transparent mould member 101 sides, and penetrates near the direction that is parallel to substrate 103.Opaque die component 102 is on substrate 103 and fully cover transparent mould member 101.Therefore, opaque die component 102 can protect transparent mould member 101 to avoid in oxidation, and avoids transparent mould member 101 to be subjected to stress and have the situation of deformation to produce.
Between aforesaid transparent mould member 101 and the opaque die component 102 reflector 107 can be arranged, wherein reflector 107 is covered in ellipsoid structure space 101b surface.
As mentioned above, between transparent mould member 101 and opaque die component 102, optionally form a reflector 107.Reflector 107 can be a metallic reflector, and its metal material can be silver or aluminium.The ellipsoid structure that is shaped as owing to reflector 107.Therefore when light sends from semiconductor luminous assembly 104 after, to the reflector 107, light can penetrate transparent mould members 101 via 107 reflection backs, reflector, and light is parallel to the direction ejaculation of substrate 103 by transparent mould member 101.
As previously mentioned, because semiconductor luminous assembly 104 emitted light are the light of scattering, penetrate in order to make the effective side direction of light, the emitted light of semiconductor luminous assembly 104 must can be near total reflection.Shown in Figure 16 a, the present invention proposes an ellipsoid structure 30, as transparent mould member 101 and the joint face metallic film of opaque die component 102 or the ellipsoid structure in reflector 107 of Figure 15 sign.When above-mentioned conductor luminescence component 104 places the optical focus 301 of ellipsoid structure 30, the light that semiconductor luminous assembly 104 is sent can be parallel to substrate 103 and be all-trans and penetrate the side of structure.Therefore, vertical with substrate 103 bright dipping is then penetrated parallel beam by the reflector in substrate 103.In addition, please refer to the schematic top plan view of Figure 16 b, side direction light-emitting type light-emitting assembly 10 provided by the invention, its horizontal light can form a diffusible light beam after penetrating exiting surface.Different with the prior art of TaiWan, China patent No. M329081, TaiWan, China patent No. M329080 and TaiWan, China patent No. M329243 is, the ellipsoid structure that the present invention proposes can not only the emitted light of reflective semiconductor luminescence component, and can form a preferable light shape, its light shape can be applicable to the backlight of side conduction.
Above-mentioned implementation content, with reference to the accompanying drawings with flow chart of steps to introduce structure of the present invention and method for making in detail.
The side light-emitting type light-emitting assembly 10 that the present invention proposes, the general flowchart of its manufacture method and technology, as shown in figure 17.At first, on a substrate, and utilize routing to engage or solid brilliant at fixing a plurality of semiconductor luminous assemblies in the mode of flip-chip.Then, utilize the mode of twice metaideophone moulding, transparent mould member and opaque die component are formed on a plurality of semiconductor luminous assemblies.In addition, can form a reflectance coating between above-mentioned transparent mould member and the opaque die component.Again single semiconductor luminous assembly and its encapsulating structure are cut out at last, carry out the test and the classification of crystal grain again.
Flow chart hereinafter with reference to Figure 17 cooperates each detailed step and illustrates it.
As shown in figure 18, a plurality of first electrodes 105 and a plurality of second electrodes 106 are set on first of substrate 103, a plurality of third electrodes 109 and a plurality of the 4th electrodes 110 are set on second, wherein first electrode 105 electrically connects with third electrode 109, and second electrode 106 and the 4th electrode 110 electrically connect.And a plurality of semiconductor luminous assembly 104 chips are arranged, be attached on the substrate 103 in the arranged mode.Above-mentioned felting method can be the mode that solid crystalline substance and routing engage, and finishes the electric connection of 106 at semiconductor luminous assembly 104, first electrode 105 and second electrode by plain conductor 108a and plain conductor 108b.Perhaps, utilize the mode of flip-chip that semiconductor luminous assembly 104 is directly connected on first electrode 105 and second electrode 106, to reach electric connection.The first above-mentioned electrode 105 is the P utmost point with third electrode 109, and second electrode 106 and the 4th electrode 110 are N utmost point electrode, and its material of wherein above-mentioned electrode can be the conductor of metallic copper.
Above-mentioned routing joint method is directly connected in semiconductor luminous assembly 104 on second electrode 106, utilizes plain conductor 108a and plain conductor 108b to finish the electric connection of 106 at semiconductor luminous assembly 104, first electrode 105 and second electrode simultaneously.Wherein the P utmost point of semiconductor luminous assembly 104 is connected with first electrode 105, and the N utmost point of semiconductor luminous assembly 104 is connected with second electrode 106.
Above-mentioned Flipchip method with semiconductor luminous assembly 104 directly repeatedly and be connected on first electrode 105 and one second electrode 106, wherein the P utmost point of semiconductor luminous assembly 104 is connected with first electrode 105, and the N utmost point of semiconductor luminous assembly 104 is connected with second electrode 106.
Aforesaid substrate 103 can be made of metal core printed circuit board (PCB), ceramic substrate or ultrathin substrate.Ultrathin substrate is to make outer electrode or contact directly be exposed to adhesive material, does not need a printed circuit board (PCB) to transmit electric signal between between crystal grain and outer electrode.In the method, at first semiconductor luminous assembly, plain conductor and positive and negative electrode are bonded on the temporary substrate.Then, make packing colloid on temporary substrate, and fixedly semiconductor luminous assembly, plain conductor and electrode among packing colloid.At last, remove temporary substrate.Thus, the electrode of this structure or contact can directly expose adhesive material, dwindle the volume of encapsulating structure thus.Another kind of thin base is a composite base plate, comprises the insulation film and second conductive layer of first conductive layer, a plurality of open-works.By the special tectonic of substrate, make that component thickness is thinner and save institute to take up space.
Shown in Figure 19 a, it is the profile according to A-B tangent line among Figure 18.Make first mold mechanism 601, wherein first mold mechanism, 601 surface below comprise a plurality of ellipsoid recesses 602.Shown in Figure 19 b, when the downward covered substrate 103 of first mold mechanism 601, aforesaid first mold mechanism 601 can form a plurality of ellipsoids space 603 with substrate 103, ellipsoid space 603 is one complete ellipsoidal 1/2nd, and this moment, each ellipsoid space 603 comprised two semiconductor luminous assemblies 104.
As shown in figure 20, it is the vertical view according to C-D tangent line among Figure 18.As mentioned above, when first mold mechanism 601 was covered in substrate, ellipsoid recess 602 can cover a plurality of semiconductor luminous assemblies 104 of above-mentioned arranged on substrate.The first above-mentioned mold mechanism 601 forms an ellipsoid space 603 with substrate, and comprise two semiconductor luminous assemblies 104 in each ellipsoid space 603 this moment.Then encapsulating injects colloid from injection port 702, via colloid circulation 701 to ellipsoid space 603, till filling up ellipsoid space 603.
After the colloid cooled and solidified, can form a plurality of transparent mould element structures.The material of above-mentioned colloid can be transparent materials such as epoxy resin or silicones in addition, and can sneak into fluorescent material equably in colloid.The material of fluorescent material can be sulfide family, oxide family, nitride family or silicates.
As shown in figure 21, it is the profile according to A-B tangent line among Figure 18.Can on transparent mould member 101, adhere to a reflector 107.If metallic reflector can utilize sputter (sputter), plastic electroplating (plastic plating) or chemical plating (chemical plating) to form.The material of metallic reflector can be metals such as silver or aluminium.
As the formation method in above-mentioned reflector 107, wherein be sputtered to a kind of physical vapour deposition (PVD) (physical vapor deposition; PVD).Its principle is to utilize electric field to change with speeding-up ion (being generally argon gas), makes the atom of ion bombardment target material surface (negative electrode).When the atomic collision of ion and target material surface, can produce the atom that the exchange momentum causes target material surface to obtain momentum and spill from target material surface.The atomic deposition that spills at last makes thing to be plated surface form a metal level on thing to be plated (anode).
The formation method in above-mentioned reflector 107, wherein plastic electroplating (plastic plating) is to utilize machinery or chemical mode to form conductive layer plastics thing to be plated, utilizes and electroplates (electroplating) in conductive layer top formation metal level.For example, with the metal dust interpolation binding agent (binder) of copper, the surface that is coated on plastics thing to be plated forms conductive layer.Then, the plastics thing to be plated of surface metallization powder is put into solution, and utilize electro-plating method to form metal level.
The method for making of above-mentioned metallic reflector, wherein chemical plating (chemical plating) is redox reaction, for example silver mirror reaction.
Shown in Figure 22 a, it is the profile according to A-B tangent line among Figure 18.Make second mold mechanism, 901, the second mold mechanisms, 901 surface below and comprise a plurality of cuboid recesses 902.Shown in Figure 22 b, when the downward covered substrate 103 of second mold mechanism 901, second mold mechanism 901 can form a cuboid space 903 with substrate 103, and wherein each cuboid space 903 comprises transparent mould member 101 and two semiconductor luminous assemblies 104 that covered by transparent mould member 101 of 1/2nd complete ellipsoid structures.
As shown in figure 23, it is the vertical view according to C-D tangent line among Figure 18.As mentioned above, when second mold mechanism 901 was covered in substrate, cuboid recess 902 can cover the transparent mould member 101 of above-mentioned arranged on substrate, and second mold mechanism 901 can form a cuboid space 903 with substrate.Transparent mould member 101 and two semiconductor luminous assemblies 104 that covered by transparent mould member 101 of comprising 1/2nd complete ellipsoid structures this moment in each cuboid space 903.Then, colloid is injected from injection port 10b, via colloid circulation 10a to cuboid space 903, till filling up.
Can form a plurality of outward appearances when colloid cools off is the opaque die component of cuboid, and wherein the colloid material can be constituted by thermoplasticity transparent materials such as polyphthalamide or poly-butine.
As shown in figure 24, it is the profile according to A-B tangent line among Figure 18.After forming opaque die component 102, the center line 111 of complying with a plurality of rectangular structure 11 cuts.The degree of depth of cutting arrives the bottom of substrate 103 from opaque die component 102 tops through reflector 107 and transparent mould member 101.Then, cut every line 112 according to exhausted, to separate unnecessary substrate portion 113.When above-mentioned cutting step is finished, can form a plurality of side light-emitting type light-emitting assemblies.
At last, each side light-emitting type light-emitting assembly is tested and classify, whether the function of test side light-emitting type light-emitting assembly is perfect.
The disclosed side light-emitting type light-emitting assembly of the present invention, it has the reflector of ellipsoid structure, wherein the ellipsoid structure has the reflecting curved surface of a plurality of directions, and comprise a plurality of reflectings surface that are parallel to exiting surface and reflecting surface perpendicular to exiting surface, can effectively utilize the side and go out light intensity and solve problems such as light shape and light field be not good.
Please refer to Figure 25, analyze according to the encapsulating structure of patent No. M339081, its distribution of light is a fan type shape.Utilize optics emulation to analyze at the optical profile of patent No. M339081, the light of its optics simulation result distributes, and please refer to Figure 26.Its analysis result finds that its maximum horizontal lighting angle of luminescence component of above-mentioned prior art is 139.81 degree, and the maximum perpendicular lighting angle is 116.13 degree.Its light intensity that contains the light region area is 73.22 lumens in addition, and largest light intensity is 19.565 lumens.Please refer to Figure 27, utilize identical light source and means that the disclosed side light-emitting type light-emitting assembly of the present invention is made the optics simulation analysis.Please refer to Figure 28, it found that its maximum horizontal lighting angle is 123.74 degree, and the maximum perpendicular lighting angle is 118.45 degree, and its light intensity that contains the light region area is 91.44 lumens in addition, and largest light intensity is 28.41 lumens.Find that via above-mentioned test result the light intensity height of its light region area of the disclosed side light-emitting type light-emitting assembly of the present invention and maximum light intensity value are big, therefore can effectively utilize the side goes out light intensity, is applicable to the light shape of side conduction backlight with formation.
In addition, manufacture method provided by the present invention is to utilize the mode of post forming, to reduce cost of manufacture, reduces Production Time and increases and make easness.
Below patent of the present invention is described in detail, yet the above being preferred embodiment of the present invention only, is not in order to limit the protection range that the present invention asked.Protection scope of the present invention when on appended claims institute's restricted portion and etc. same domain decide.All those skilled in the art are not in breaking away from this patent spirit or scope, and the variation of the change of being done, modification or identity property and modification all belong to the equivalence of being finished under the spirit of the present invention and change or design, should belong to protection scope of the present invention.