CN101826516B - Side light-emitting type light-emitting assembly encapsulating structure and manufacturing method thereof - Google Patents
Side light-emitting type light-emitting assembly encapsulating structure and manufacturing method thereof Download PDFInfo
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- CN101826516B CN101826516B CN 200910119986 CN200910119986A CN101826516B CN 101826516 B CN101826516 B CN 101826516B CN 200910119986 CN200910119986 CN 200910119986 CN 200910119986 A CN200910119986 A CN 200910119986A CN 101826516 B CN101826516 B CN 101826516B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
The invention relates to a side light-emitting type light-emitting assembly encapsulating structure and a manufacturing method thereof. The side light-emitting type light-emitting assembly encapsulating structure comprises a base plate, a semiconductor light-emitting assembly, a transparent die member and an opaque die member, wherein the base plate is provided with a first surface and a second surface; the first surface is provided with a first electrode and a second electrode; the second surface is provided with a third electrode and a fourth electrode; the first electrode is electrically connected with the third electrode, and the second electrode is electrically connected with the fourth electrode; the semiconductor light-emitting assembly is fixed to the first surface of the base plate, a P electrode of the semiconductor light-emitting assembly is electrically connected with the first electrode, and an N electrode of the semiconductor light-emitting assembly is electrically connected with the second electrode; the appearance of the transparent die member approximately forms a quarter of ellipsoid, the transparent die member is provided with a joint surface and a light-emitting surface, and the joint surface is used for covering the semiconductor light-emitting assembly; and the opaque die member covers the transparent die member so that the appearance of the light-emitting assembly encapsulating structure approximately forms a cuboid. The side light-emitting type light-emitting assembly encapsulating structure is manufactured by utilizing a pouring conversion moulding process.
Description
Technical field
The present invention relates to a kind of light-emitting assembly packaging structure and manufacturing approach thereof, particularly a kind of side light-emitting type light-emitting assembly encapsulating structure and manufacturing approach thereof.
Background technology
Now, semiconductor luminous assembly has the luminous form of forward luminous (top view or top-emitting) or lateral direction light emission (side view or side-emitting) usually.Usually have luminosity (illumination) at the semiconductor luminous assembly of lateral direction light emission and reach the problems such as understrressing that encapsulating structure can bear inadequately.Therefore, the correlation technique that has many inventions and research to be directed against the semiconductor luminous assembly of side bright dipping has many improved methods of proposition.In addition, semiconductor light emitting crystal grain mostly utilizes metaideophone moulding (transfer-molding) or encapsulating modes such as (dispensing) to carry out Chip Packaging (package).Both in comparison, the packaged type of encapsulating normally is used in plastic pin die carrier (PLCC; Plastic leadframe chip carrier) in the light-emitting diode product encapsulation.And semiconductor light emitting crystal grain utilizes the packaged type of encapsulating, can cause manufacturing cost higher usually.
A prior art, as shown in Figure 1, the prior art that it is disclosed for Japanese Patent No. 5-315651.Its structure comprises a rectangular cover layer 46 and is formed on the substrate 45, and covers light-emitting diode chip for backlight unit 43.One hyaline layer 44 is arranged between substrate 45 and the cover layer 46, and hyaline layer 44 is an arc structure.Utilize this arc structure to be used as the reflector, the light that light-emitting diode chip for backlight unit 43 is sent reflects the side of encapsulating structure, forms a side luminescent light-emitting diode.The manufacturing approach that this prior art discloses is that the mode with encapsulating forms cover layer and hyaline layer, causes its manufacturing cost high.
In addition, a kind of prior art also is to utilize the mode of encapsulating to form encapsulating structure, and the prior art that is disclosed like U.S. Patent number US 6919586 B2 and US 7312479 B2 is please with reference to Fig. 2.Wherein packing colloid 14 is opaque rectangular structure, and between substrate 12 and packing colloid 14, a hyaline layer 16 is arranged.Utilize rectangular structure packing colloid 14 to be used as the reflector, the light that light-emitting diode chip for backlight unit 43 is sent reflexes to the packaging body side, forms a side luminescent light-emitting diode.As shown in Figure 3, it shows the production method of the encapsulating structure of Fig. 2, in a module 34, a plurality of encapsulating structures is arranged.Wherein each encapsulating structure has a light-emitting diode chip for backlight unit 43.The packaged type of above-mentioned light-emitting diode chip for backlight unit 43 is that module top hole 24 pours into transparent colloid thus.Afterwards, as shown in Figure 4, paste framework 36 in the colloid upper strata.Cut out at last the LED encapsulation construction that single side goes out light effect again.The structure that this prior art discloses is the reflector of a rectangular structure, and manufacturing approach is that mode with encapsulating forms cover layer and hyaline layer.Therefore, cause the more high defective of side bright dipping poor effect and manufacturing cost thereof.
In order to improve above-mentioned defective, a kind of prior art is disclosed, and it is the prior art that TaiWan, China patent No. M329243 is disclosed, and is as shown in Figure 5.The encapsulating structure of above-mentioned prior art comprises semiconductor luminous assembly 20 and covers the packing colloid 40 on it, and wherein hyaline layer 16 has a rectangle exiting surface 302.Utilize packing colloid 40 to be used as the reflector, the light ejaculation rectangle exiting surface 302 formation sides that semiconductor luminous assembly 20 is sent go out light effect.Its manufacturing process, as shown in Figure 6, at first on semiconductor luminous assembly 20, cover a plurality of long strip type die units 3, wherein each packing colloid upper surface and exiting surface have colloid cambered surface 30S and colloid rectangle exiting surface 302 respectively.Then, as shown in Figure 7, respectively another die unit M3 is covered on the long strip type die unit 3, and encapsulating is to produce ccf layer 4 '.Cut out at last semiconductor luminous assembly 20 encapsulating structures that single side goes out light effect again.
Another similar prior art is disclosed, and is the prior art that TaiWan, China patent No. M339080 is disclosed, and is as shown in Figure 8.Wherein encapsulating structure has multilayer and is covered in the packing colloid 40 on the semiconductor luminous assembly 20 respectively.Wherein transparent colloid 300 upper surfaces and exiting surface have a cambered surface 30S and a coarse rectangle exiting surface 301S respectively.Utilize this cambered surface 30S to be used as the reflector, the light that semiconductor luminous assembly 20 is sent reflects coarse rectangle exiting surface 301S, forms the encapsulating structure that the side goes out light effect.Its manufacturing process, as shown in Figure 9, encapsulating structure is made has a plurality of a plurality of long strip type die units 3 that are covered in respectively on the semiconductor luminous assembly 20, and wherein each packing colloid upper surface has a cambered surface 30S.Shown in figure 10, respectively die unit M3 is covered on the long strip type die unit 3, and encapsulating is to produce ccf layer 4 '.Cut out single side at last and go out semiconductor luminous assembly 20 encapsulating structures of light effect.
Another similar prior art is disclosed, and is the prior art that TaiWan, China patent No. M329081 is disclosed, and is shown in figure 11.Encapsulating structure has multilayer and is covered in the packing colloid 40 on the semiconductor luminous assembly 20 respectively, and wherein transparent colloid 300 upper surfaces and exiting surface have a cambered surface and a rectangle exiting surface 302 respectively.Utilize this cambered surface to be used as reflector layer, the light that semiconductor luminous assembly 20 is sent reflects rectangle exiting surface 302 formation sides and goes out light effect.Shown in figure 12, encapsulating structure is made has a plurality of long strip type die units 3 that are covered in respectively on the semiconductor luminous assembly 20, and wherein the packing colloid upper surface has a cambered surface 30S and a rectangle 302.Shown in figure 13, die unit M2 is covered on the long strip type die unit 3, and encapsulating is to produce ccf layer 4.Cut out single side at last and go out semiconductor luminous assembly 20 encapsulating structures of light effect.
Above-mentioned three reflector that prior art disclosed are all the circular arc reflector, and cover layer all needs to form through a plurality of moulds.Therefore, the light shape of the side bright dipping of above-mentioned encapsulating structure and light field are still not good, and the numerous and diverse cost of manufacture that causes of manufacturing process increases.
The reflector layer of above-mentioned each item prior art mostly is rectangle or circular arc reflecting surface, the reflection ray poor effect of rectangular reflection face wherein, and perhaps its reflecting surface of arc reflective surface has only a direction, thereby causes the light shape of bright dipping and light field not good.The manufacturing process of above-mentioned in addition each item prior art, filling separately after its filling that encapsulates glue-line often needs a plurality of die units to constitute perhaps needs encapsulating respectively again.Cause manufacturing process numerous and diverse, and cause cost of manufacture to increase.Therefore, need a technology to solve the problems referred to above.
Summary of the invention
In view of in the above-mentioned background of invention, for a high efficiency, side direction LED cheaply are provided.The present invention provide one have the ellipsoid structure the reflector, the ellipsoid structure has the reflecting curved surface of a plurality of directions, wherein comprises a plurality of reflectings surface that are parallel to exiting surface and reflecting surface perpendicular to exiting surface.Can effectively utilize the side and go out light intensity to solve problems such as light shape and light field be not good.And manufacturing approach provided by the present invention is to utilize the mode of post forming (twice-molding), to reduce cost of manufacture, reduces Production Time (cycle time) and increases and process easness.
Another object of the present invention is provides a side light-emitting type light-emitting assembly, and its light shape is applicable to the backlight of side conduction.
The present invention discloses a kind of side light-emitting type light-emitting assembly encapsulating structure, comprises a substrate, semiconductor luminescence component, a transparent mould member and an opaque die component.
Above-mentioned substrate has one first and one second; First mask has one first electrode and one second electrode; Second mask has a third electrode and one the 4th electrode, and wherein first electrode and third electrode electrically connect, and second electrode and the 4th electrode electrically connect.
Above-mentioned semiconductor luminous assembly is fixed on the surface of first base, and the P electrode of semiconductor luminous assembly and first electrode electrically connect, and the N electrode of semiconductor luminous assembly and second electrode electrically connect.
Above-mentioned transparent mould member, outward appearance roughly is 1/4th spheroids.It has a composition surface and an exiting surface, and the composition surface is in order to cover semiconductor luminous assembly.
Above-mentioned opaque die component is covered on the transparent mould member, makes the light-emitting assembly packaging structure outward appearance roughly be cuboid.
Interface between transparent mould member and the opaque die component provides the reflecting surface of semiconductor luminous assembly to make exiting surface perpendicular to substrate.
The present invention discloses a kind of method that forms light-emitting assembly packaging structure in addition, and its step comprises: an electrically-conductive backing plate at first is provided, and it has a plurality of first electrodes and a plurality of second electrode.
Then, fixing a plurality of semiconductor luminous assemblies on above-mentioned electrically-conductive backing plate, wherein the P electrode of a plurality of semiconductor luminous assemblies and first electrode electrically connect, and the N electrode of a plurality of semiconductor luminous assemblies and second electrode electrically connect.
Mode with the metaideophone moulding forms a plurality of transparent mould members; Each outward appearance of a plurality of transparent mould members roughly presents 1/2nd spheroids; It has a composition surface and one 1/2nd ellipsoidal surface respectively, and the composition surface is in order to cover two semiconductor luminous assemblies in a plurality of semiconductor luminous assemblies.And the mode with metaideophone moulding (transfer-molding) forms a plurality of opaque die components, is covered on the transparent mould member.
At last, cut a plurality of opaque die components and form a plurality of light-emitting assembly packaging structures, wherein each light-emitting assembly packaging structure all has a composition surface and an exiting surface, makes each light-emitting assembly packaging structure outward appearance roughly be cuboid.
Each above-mentioned transparent mould member and the interface between each opaque die component provide the reflecting surface of each semiconductor luminous assembly, make the exiting surface of each luminescence component perpendicular to substrate.
Description of drawings
Fig. 1 shows the side light-emitting type light-emitting assembly structural representation of prior art;
Fig. 2 shows the side light-emitting type light-emitting assembly structural profile sketch map of prior art;
Fig. 3, Fig. 4 show the side light-emitting type light-emitting assembly manufacturing process sketch map of prior art;
Fig. 5 shows the side light-emitting type light-emitting assembly structural profile sketch map of prior art;
Fig. 6, Fig. 7 show the side light-emitting type light-emitting assembly manufacturing process sketch map of prior art;
Fig. 8 shows the side light-emitting type light-emitting assembly structural profile sketch map of prior art;
Fig. 9, Figure 10 show the side light-emitting type light-emitting assembly manufacturing process sketch map of prior art;
Figure 11 shows the side light-emitting type light-emitting assembly structural profile sketch map of prior art;
Figure 12, Figure 13 show the side light-emitting type light-emitting assembly manufacturing process sketch map of prior art;
Figure 14 shows side light-emitting type light-emitting assembly structural representation of the present invention;
Figure 15 shows side light-emitting type light-emitting assembly structural profile sketch map of the present invention;
Figure 16 a shows side light-emitting type light-emitting assembly functional schematic of the present invention;
Figure 16 b shows side light-emitting type light-emitting assembly functional schematic of the present invention;
Figure 17 shows side light-emitting type light-emitting assembly of the present invention and makes flow chart;
Figure 18 shows side light-emitting type light-emitting assembly structural representation of the present invention;
Figure 19 a, Figure 19 b show side light-emitting type light-emitting assembly structural profile sketch map of the present invention;
Figure 20 shows side light-emitting type light-emitting assembly structure schematic top plan view of the present invention;
Figure 21 shows side light-emitting type light-emitting assembly structural profile sketch map of the present invention;
Figure 22 a, Figure 22 b show side light-emitting type light-emitting assembly structural profile sketch map of the present invention;
Figure 23 shows side light-emitting type light-emitting assembly structure schematic top plan view of the present invention;
Figure 24 shows side light-emitting type light-emitting assembly structural profile sketch map of the present invention;
Figure 25 shows the side light-emitting type light-emitting assembly optical profile figure of prior art;
Figure 26 shows the side light-emitting type light-emitting assembly optical profile figure of prior art;
Figure 27 shows side light-emitting type light-emitting assembly optical profile figure of the present invention; And
Figure 28 shows side light-emitting type light-emitting assembly optical profile figure of the present invention.
Wherein, description of reference numerals is following:
3 die units 4,4 ' ccf layer
10 side light-emitting type light-emitting assemblies, 12,45,103 substrates
14,40 packing colloids, 16,44 hyaline layers
20,104 semiconductor luminous assemblies, 24 holes
30 ellipsoid structure 30S cambered surfaces
34 modules, 36 frameworks
43 light-emitting diode chip for backlight unit, 46 cover layers
M2, M3 die unit 101 transparent mould members
The oval 101b ellipsoid of 101a structure space
105 first electrodes, 106 second electrodes
107 reflector 108a, 108b plain conductor
109 third electrodes 110 the 4th electrode
111 center lines 112 are exhausted at a distance from line
113 unnecessary substrate portion 300 transparent colloids
The coarse rectangle exiting surface of 301 optical focus 301S
302 rectangle exiting surfaces, 601 first mold mechanisms
602 ellipsoid recesses, 603 ellipsoid spaces
701,10a colloid circulation 702,10b injection port
901 second mold mechanisms, 902 cuboid recesses
903 cuboid spaces
Embodiment
The present invention provides a kind of side light-emitting type light-emitting assembly encapsulating structure and manufacturing approach thereof, in order to understand the present invention up hill and dale, will in following description, propose detailed structure and technology thereof.Apparently, enforcement of the present invention is not defined in the specific details that the technical staff had the knack of in semiconductor luminous assembly field.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.Preferred embodiment meeting of the present invention is described in detail as follows, yet except these detailed descriptions, the present invention can also be widely used among other the embodiment, and scope of the present invention constrained not, and it is as the criterion with appending claims.
The present invention discloses a kind of side light-emitting type light-emitting assembly encapsulating structure, comprises: a substrate, semiconductor luminescence component, a transparent mould member and an opaque die component.
Above-mentioned substrate has one first and one second; First mask has one first electrode and one second electrode; Second mask has a third electrode and one the 4th electrode, and wherein first electrode and third electrode electrically connect, and second electrode and the 4th electrode electrically connect.
Above-mentioned semiconductor luminous assembly is fixed on the surface of first base, and the P electrode of semiconductor luminous assembly and first electrode electrically connect, and the N electrode of semiconductor luminous assembly and second electrode electrically connect.Semiconductor luminous assembly is to be electrically connected on the substrate with routing joint (wire bonding) or flip-chip (flip chip) mode in addition.In addition, semiconductor luminous assembly can be lasing fluorescence diode chip for backlight unit, III-V compound semiconductor chip or II-VI compound semiconductor chip.
Above-mentioned transparent mould member, outward appearance roughly is 1/4th spheroids.It has a composition surface and an exiting surface, and the composition surface is in order to cover semiconductor luminous assembly.Can contain fluorescent material in the transparent mould member in addition, in order to the light beam mixed light that is produced with semiconductor luminous assembly.Or on exiting surface, form a phosphor, in order to the light beam mixed light that is produced with semiconductor luminous assembly.In addition, the material of transparent mould member can be epoxy resin (epoxy) or siloxanes (silicone gel).
Above-mentioned opaque die component is covered on the transparent mould member, makes the light-emitting assembly packaging structure outward appearance roughly be cuboid.In addition, the material of opaque die component can be polyphthalamide (PPA) or gathers butine (PPB).
Can comprise a reflector between above-mentioned transparent mould member and the opaque die component, wherein the reflector can be metallic reflector.
Above-mentioned transparent mould member and the interface between the opaque die component provide the reflecting surface of semiconductor luminous assembly to make exiting surface perpendicular to substrate.
After above-mentioned semiconductor luminous assembly institute emitted light beams is left exiting surface, can be parallel to orientation substrate and form a scattering surface, and be roughly parallel to substrate perpendicular to the light beam of exiting surface direction.
The present invention discloses a kind of method that forms light-emitting assembly packaging structure in addition, and its step comprises:
One substrate is provided; It has one first and one second, and first mask has a plurality of first electrodes and a plurality of second electrode, and second mask has a plurality of third electrodes and a plurality of the 4th electrode; Wherein first electrode and third electrode electrically connect, and second electrode and the 4th electrode electrically connect.
Fixing a plurality of semiconductor luminous assemblies are on electrically-conductive backing plate, and the P electrode of a plurality of semiconductor luminous assemblies and first electrode electrically connect, and the N electrode of a plurality of semiconductor luminous assemblies and second electrode electrically connect.The fixing step of semiconductor luminous assembly is to engage or the mode of flip-chip is electrically connected on the substrate with routing in addition, and wherein above-mentioned semiconductor luminous assembly can be lasing fluorescence diode chip for backlight unit, III-V compound semiconductor chip or II-VI compound semiconductor chip.
Mode with the metaideophone moulding forms a plurality of transparent mould members; Each outward appearance of a plurality of transparent mould members roughly presents 1/2nd spheroids; It has a composition surface and one 1/2nd ellipsoidal surface respectively, and the composition surface is in order to cover two semiconductor luminous assemblies in a plurality of semiconductor luminous assemblies.Can in advance fluorescent material be mixed in the transparent mould member in addition and maybe can a phosphor be formed on the exiting surface.In addition, the material of transparent mould member can be epoxy resin or siloxanes.
Mode with the metaideophone moulding forms a plurality of opaque die components, and it covers on the transparent mould member.In addition, the material of opaque die component can be polyphthalamide or gathers butine.
Can form a reflector in addition between transparent mould member and opaque die component, wherein above-mentioned reflector can be metallic reflector.
Cut a plurality of opaque die components and form a plurality of light-emitting assembly packaging structures, wherein each light-emitting assembly packaging structure has a composition surface and an exiting surface, makes each light-emitting assembly packaging structure outward appearance roughly be cuboid.
Interface between each transparent mould member and the opaque die component provides exiting surface that the reflecting surface of each semiconductor luminous assembly makes each luminescence component perpendicular to substrate.
Below will be with reference to accompanying drawing detailed explanation technology contents and each item embodiment.
Please with reference to Figure 14; The present invention provides a kind of side light-emitting type light-emitting assembly 10, comprises a substrate 103, one first electrode 105, one second electrode 106, a third electrode 109, one the 4th electrode 110, semiconductor luminescence component 104, plain conductor 108a, plain conductor 108b, a transparent mould member 101 and an opaque die component 102.
Above-mentioned substrate 103 has one first and one second (not shown); Wherein first mask has one first electrode 105 and one second electrode 106; Second mask has a third electrode 109 and one the 4th electrode 110; Wherein first electrode 105 electrically connects with third electrode 109, and second electrode 106 and the 4th electrode 110 electrically connect.The first above-mentioned electrode 105 is the P electrode with third electrode 109, and second electrode 106 and the 4th electrode 110 are the N electrode.
Above-mentioned semiconductor luminous assembly 104 is arranged at first, and is connected with first electrode 105 and second electrode 106 respectively through plain conductor 108a and plain conductor 108b, or connects the electrode on the substrate 103 with the method for flip-chip.
Above-mentioned in addition substrate 103, semiconductor luminous assembly 104, plain conductor 108a, plain conductor 108b, part first electrode 105 are covered by transparent mould member 101 with part second electrode 106, and wherein coverage is a half elliptic 101a and forms an ellipsoid structure space 101b on substrate 103.
Above-mentioned opaque die component 102 is covered on substrate 103 and the transparent mould member 101, and the scope of its covering is the surface of substrate 103 and ellipsoid structure 101b.
Above-mentioned substrate 103 can be metal core printed circuit board (PCB) (mental core printed circuitboard; MCPCB), ceramic substrate (ceramic substrate) or ultrathin substrate; Wherein the patent of above-mentioned ultrathin substrate is filed an application by Advanced Development Photoelectric Co., Ltd.; Its TaiWan, China number of patent application is 096126300, and Patent Application No. is 12/173,763.Above-mentioned ultrathin substrate has two kinds of kenels, and a kind of is to make outer electrode or contact directly expose adhesive material, and does not need a printed circuit board (PCB) between between crystal grain and outer electrode, to transmit electric signal.The method is that semiconductor luminous assembly chip and plain conductor are bonded on the temporary substrate, then injects packing colloid in substrate surface and fixedly semiconductor luminous assembly, plain conductor and electrode.Then remove temporary substrate, make electrode or contact directly expose adhesive material, dwindle the volume of encapsulating structure thus; Another kind of ultrathin substrate is a composite base plate, and its structure comprises the insulation film and second conductive layer of first conductive layer, a plurality of open-works.Through special construction, make the thickness of assembly more approach and save shared space.Above-mentioned two kinds of ultrathin substrates, its detailed content all is recorded in the summary of the invention, please with reference to it.Utilize above-mentioned two types ultrathin substrate, can make encapsulating structure thickness of the present invention between 0.2～0.3mm, save shared space and can remove the problem of poor heat radiation.
As previously mentioned; Please with reference to shown in Figure 15 tangent plane structural representation; Transparent mould member 101 is attached to substrate 103 surfaces and is covered on the semiconductor luminous assembly 104; And form an ellipsoid structure space 101b in substrate 103 surfaces, wherein ellipsoid structure space 101b is 1/4th of a complete ellipsoid structure.Can attach one deck phosphor (phosphor) 101c in the exiting surface of transparent mould member 101 in addition.
Above-mentioned transparent mould member 101 can be mixed with color fluorescent material (fluorescent powder) in wherein, makes the side direction light colour mixture that transmits.Suppose that in the process of injecting colloid transparent mould member 101 inner fluorescent material skewness produce the even light of irregular colour when causing light to penetrate structure.At this moment, the phosphor 101c that attaches one deck and fluorescent material same color can make the light that transmits exiting surface produce the light of an even color in the exiting surface of transparent mould member 101.
As stated, the present invention provides an embodiment to produce the side lighting-out tpye luminescence component that emits white light, for example can make above-mentioned semiconductor luminous assembly 104 be the semiconductor chip of nitride, so that semiconductor luminous assembly 104 can produce blue-light sources.Simultaneously yellow fluorescent powder is being mixed equably in transparent mould member 101; When above-mentioned blue light light when semiconductor luminous assembly 104 scatters and sees through transparent mould member 101 structures; Can with the yellow fluorescent powder colour mixture in the transparent mould member 101, thereby produce the side lighting-out tpye luminescence component of a white light.104 emitted light beams of above-mentioned semiconductor luminous assembly are after leaving exiting surface, and the light beam that wherein is parallel to substrate 103 directions has the angle of diffusion, and likewise the light beam perpendicular to the exiting surface direction can be parallel to substrate 103 ejaculations.
The function of foregoing transparent mould member 101 has also comprised protection internal semiconductor luminescence component 104.Because transparent mould member 101 is on substrate 103, and fully contain semiconductor luminous assembly 104, plain conductor 108a and plain conductor 108b.When side light-emitting type light-emitting assembly 10 structures are born external force, the transparent mould member 101 of inside configuration can influence than the more Zao external force of bearing of semiconductor luminous assembly 104.And the external force of the first absorption portion of transparent mould member 101 structures ability makes external force reduce for the influence of internal semiconductor luminescence component 104, plain conductor 108a and plain conductor 108b.Therefore, can avoid semiconductor luminous assembly 104 to avoid stress extruding and damage, even can also avoid dust accretions or other external environment factor and influence its function.
Foregoing opaque die component 102 is attached on the substrate 103 and covers transparent mould member 101, and opaque die component 102 is a rectangular structure.Above-mentioned opaque die component 102 can form a reflectance coating with the joint face of transparent mould member 101, for example the silver metal film.This silver metal film that is attached on the opaque die component 102 can reflex to the light that semiconductor luminous assembly 104 sends transparent mould member 101 sides, and penetrates near the direction that is parallel to substrate 103.Opaque die component 102 is on substrate 103 and fully cover transparent mould member 101.Therefore, opaque die component 102 can protect transparent mould member 101 to avoid in oxidation, and avoids transparent mould member 101 to receive stress and have the situation of deformation to produce.
Between aforesaid transparent mould member 101 and the opaque die component 102 reflector 107 can be arranged, wherein reflector 107 is covered in ellipsoid structure space 101b surface.
As stated, between transparent mould member 101 and opaque die component 102, optionally form a reflector 107.Reflector 107 can be a metallic reflector, and its metal material can be silver or aluminium.The ellipsoid structure that is shaped as owing to reflector 107.Therefore after light sent from semiconductor luminous assembly 104, through transparent mould member 101 to reflector 107, light can penetrate transparent mould member 101 via 107 reflection backs, reflector, and light is parallel to the direction ejaculation of substrate 103.
As previously mentioned, because the light that semiconductor luminous assembly 104 is penetrated is the light of scattering, penetrate in order to make the effective side direction of light, the light that semiconductor luminous assembly 104 is penetrated is necessary can be near total reflection.Shown in Figure 16 a, the present invention proposes an ellipsoid structure 30, as transparent mould member 101 and the joint face metallic film of opaque die component 102 or the ellipsoid structure in reflector 107 of Figure 15 sign.When above-mentioned conductor luminescence component 104 places the optical focus 301 of ellipsoid structure 30, can the light that semiconductor luminous assembly 104 is sent be parallel to substrate 103 and be all-trans and penetrate the side of structure.Therefore, then parallel beam is penetrated in substrate 103 with substrate 103 vertical bright dippings through the reflector.In addition, please with reference to the schematic top plan view of Figure 16 b, side direction light-emitting type light-emitting assembly 10 provided by the invention, its horizontal light can form a diffusible light beam after penetrating exiting surface.Different with the prior art of TaiWan, China patent No. M329081, TaiWan, China patent No. M329080 and TaiWan, China patent No. M329243 is; The light that the ellipsoid structure that the present invention proposes can not only the reflective semiconductor luminescence component be penetrated; And can form a preferable light shape, its light shape can be applicable to the backlight of side conduction.
Above-mentioned implementation content will be with reference to accompanying drawing and flow chart of steps to introduce structure of the present invention and method for making in detail.
The side light-emitting type light-emitting assembly 10 that the present invention proposes, the general flowchart of its manufacturing approach and technology, shown in figure 17.At first, on a substrate, and utilize routing to engage or solid brilliant at fixing a plurality of semiconductor luminous assemblies with the mode of flip-chip.Then, utilize the mode of twice metaideophone moulding, transparent mould member and opaque die component are formed on a plurality of semiconductor luminous assemblies.In addition, can form a reflectance coating between above-mentioned transparent mould member and the opaque die component.Again single semiconductor luminous assembly and its encapsulating structure are cut out at last, carry out the test and the classification of crystal grain again.
Below will cooperate each detailed step and illustrate it with reference to the flow chart of Figure 17.
Shown in figure 18; A plurality of first electrodes 105 and a plurality of second electrodes 106 are set on first of substrate 103; A plurality of third electrodes 109 and a plurality of the 4th electrodes 110 are set on second; Wherein first electrode 105 electrically connects with third electrode 109, and second electrode 106 and the 4th electrode 110 electrically connect.And a plurality of semiconductor luminous assembly 104 chips are arranged, be attached on the substrate 103 with the arranged mode.Above-mentioned felting method can be the mode that solid crystalline substance and routing engage, through the electric connection of 106 at plain conductor 108a and plain conductor 108b completion semiconductor luminous assembly 104, first electrode 105 and second electrode.Perhaps, utilize the mode of flip-chip that semiconductor luminous assembly 104 is directly connected on first electrode 105 and second electrode 106, to reach electric connection.The first above-mentioned electrode 105 is the P utmost point with third electrode 109, and second electrode 106 and the 4th electrode 110 are N utmost point electrode, and its material of wherein above-mentioned electrode can be the conductor of metallic copper.
Above-mentioned routing joint method is directly connected in semiconductor luminous assembly 104 on second electrode 106, utilizes plain conductor 108a and plain conductor 108b to accomplish the electric connection of 106 at semiconductor luminous assembly 104, first electrode 105 and second electrode simultaneously.Wherein the P utmost point of semiconductor luminous assembly 104 is connected with first electrode 105, and the N utmost point of semiconductor luminous assembly 104 is connected with second electrode 106.
Above-mentioned Flipchip method with semiconductor luminous assembly 104 directly repeatedly and be connected on first electrode 105 and one second electrode 106; Wherein the P utmost point of semiconductor luminous assembly 104 is connected with first electrode 105, and the N utmost point of semiconductor luminous assembly 104 is connected with second electrode 106.
Shown in Figure 19 a, it is the profile according to A-B tangent line among Figure 18.Make first mold mechanism 601, wherein first mold mechanism, 601 surface below comprise a plurality of ellipsoid recesses 602.Shown in Figure 19 b; When the downward covered substrate 103 of first mold mechanism 601; Aforesaid first mold mechanism 601 can form a plurality of ellipsoids space 603 with substrate 103; Ellipsoid space 603 is one complete ellipsoidal 1/2nd, and this moment, each ellipsoid space 603 comprised two semiconductor luminous assemblies 104.
Shown in figure 20, it is the vertical view according to C-D tangent line among Figure 18.As stated, when first mold mechanism 601 was covered in substrate, ellipsoid recess 602 can cover a plurality of semiconductor luminous assemblies 104 of above-mentioned arranged on substrate.The first above-mentioned mold mechanism 601 forms an ellipsoid space 603 with substrate, and comprise two semiconductor luminous assemblies 104 in each ellipsoid space 603 this moment.Then encapsulating injects colloid from injection port 702, via colloid circulation 701 to ellipsoid space 603, till filling up ellipsoid space 603.
After the colloid cooled and solidified, can form a plurality of transparent mould element structures.The material of above-mentioned colloid can be transparent materials such as epoxy resin or silicones in addition, and can sneak into fluorescent material equably in colloid.The material of fluorescent material can be sulfide family, oxide family, nitride family or silicates.
Shown in figure 21, it is the profile according to A-B tangent line among Figure 18.Can on transparent mould member 101, adhere to a reflector 107.If metallic reflector, sputter capable of using (sputter), plastic electroplating (plastic plating) or chemical plating (chemical plating) form.The material of metallic reflector can be metals such as silver or aluminium.
Like the formation method in above-mentioned reflector 107, wherein be sputtered to a kind of physical vapour deposition (PVD) (physicalvapor deposition; PVD).Its principle is to utilize electric field to change with speeding-up ion (being generally argon gas), makes the atom of ion bombardment target material surface (negative electrode).When the atomic collision of ion and target material surface, can produce the atom that the exchange momentum causes target material surface to obtain momentum and spill from target material surface.The atomic deposition that spills at last makes thing to be plated surface form a metal level on thing to be plated (anode).
The formation method in above-mentioned reflector 107, wherein plastic electroplating (plastic plating) is to utilize machinery or chemical mode to form conductive layer plastics thing to be plated, utilizes and electroplates (electroplating) in conductive layer top formation metal level.For example, with the metal dust interpolation binding agent (binder) of copper, the surface that is coated on plastics thing to be plated forms conductive layer.Then, the plastics thing to be plated of surface metallization powder is put into solution, and utilize electro-plating method to form metal level.
The method for making of above-mentioned metallic reflector, wherein chemical plating (chemical plating) is redox reaction, for example silver mirror reaction.
Shown in Figure 22 a, it is the profile according to A-B tangent line among Figure 18.Make second mold mechanism, 901, the second mold mechanisms, 901 surface below and comprise a plurality of cuboid recesses 902.Shown in Figure 22 b; When the downward covered substrate 103 of second mold mechanism 901; Second mold mechanism 901 can form a cuboid space 903 with substrate 103, and wherein each cuboid space 903 comprises transparent mould member 101 and two semiconductor luminous assemblies 104 that covered by transparent mould member 101 of 1/2nd complete ellipsoid structures.
Shown in figure 23, it is the vertical view according to C-D tangent line among Figure 18.As stated, when second mold mechanism 901 was covered in substrate, cuboid recess 902 can cover the transparent mould member 101 of above-mentioned arranged on substrate, and second mold mechanism 901 can form a cuboid space 903 with substrate.Transparent mould member 101 and two semiconductor luminous assemblies 104 that covered by transparent mould member 101 of comprising 1/2nd complete ellipsoid structures this moment in each cuboid space 903.Then, colloid is injected from injection port 10b, via colloid circulation 10a to cuboid space 903, till filling up.
When colloid cools off, can form a plurality of outward appearances is the opaque die component of cuboid, and wherein the colloid material can or be gathered thermoplasticity transparent materials such as butine by polyphthalamide and constituted.
Shown in figure 24, it is the profile according to A-B tangent line among Figure 18.After forming opaque die component 102, the center line 111 of complying with a plurality of rectangular structure 11 cuts.The degree of depth of cutting arrives the bottom of substrate 103 from opaque die component 102 tops through reflector 107 and transparent mould member 101.Then, cut at a distance from line 112 according to exhausted, to separate unnecessary substrate portion 113.When above-mentioned cutting step is accomplished, can form a plurality of side light-emitting type light-emitting assemblies.
At last, each side light-emitting type light-emitting assembly is tested and classify, whether the function of test side light-emitting type light-emitting assembly is perfect.
The side light-emitting type light-emitting assembly that the present invention disclosed; It has the reflector of ellipsoid structure; Wherein the ellipsoid structure has the reflecting curved surface of a plurality of directions; And comprise a plurality of reflectings surface that are parallel to exiting surface and reflecting surface perpendicular to exiting surface, can effectively utilize the side and go out light intensity and solve problems such as light shape and light field be not good.
Please with reference to Figure 25, analyze according to the encapsulating structure of patent No. M339081, its distribution of light is a fan type shape.Utilize optics emulation to analyze to the optical profile of patent No. M339081, the light of its optics simulation result distributes, please with reference to Figure 26.Its analysis result finds that its maximum horizontal lighting angle of luminescence component of above-mentioned prior art is 139.81 degree, and the maximum perpendicular lighting angle is 116.13 degree.Its light intensity that contains the light region area is 73.22 lumens in addition, and largest light intensity is 19.565 lumens.Please, utilize identical light source and means that the side light-emitting type light-emitting assembly that the present invention disclosed is made the optics simulation analysis with reference to Figure 27.Please with reference to Figure 28, its result finds that its maximum horizontal lighting angle is 123.74 degree, and the maximum perpendicular lighting angle is 118.45 degree, and its light intensity that contains the light region area is 91.44 lumens in addition, and largest light intensity is 28.41 lumens.Find that via above-mentioned test result the light intensity height of its light region area of the side light-emitting type light-emitting assembly that the present invention disclosed and maximum light intensity value are big, therefore can effectively utilize the side goes out light intensity, is applicable to the light shape of side conduction backlight with formation.
In addition, manufacturing approach provided by the present invention is to utilize the mode of post forming, to reduce cost of manufacture, reduces Production Time and increases and make easness.
Below patent of the present invention is done a detailed description, yet the above being merely preferred embodiment of the present invention, is not in order to limit the protection range that the present invention asked.Protection scope of the present invention when look appended claims institute's restricted portion and etc. same domain and deciding.All those skilled in the art are not in breaking away from this patent spirit or scope, and the variation of the change of being done, modification or identity property and modification all belong to the equivalence of being accomplished under the spirit of the present invention and change or design, should belong to protection scope of the present invention.
Claims (10)
1. side light-emitting type light-emitting assembly encapsulating structure comprises:
One substrate; Have one first and one second, this first mask has one first electrode and one second electrode, and this second mask has a third electrode and one the 4th electrode; Wherein this first electrode and this third electrode electrically connect, and this second electrode and the 4th electrode electrically connect;
The semiconductor luminescence component is fixed on this surface of first base, and the P electrode of this semiconductor luminous assembly and this first electrode electrically connect, and the N electrode of this semiconductor luminous assembly and this second electrode electrically connect;
One transparent mould member, outward appearance is 1/4th spheroids, has a composition surface and an exiting surface, and this composition surface is in order to cover this semiconductor luminous assembly; And
One opaque die component covers this transparent mould member, makes the outward appearance of this light-emitting assembly packaging structure be cuboid.
2. side light-emitting type light-emitting assembly encapsulating structure as claimed in claim 1; Also comprise the reflector between this transparent mould member and this opaque die component; After wherein above-mentioned semiconductor luminous assembly institute emitted light beams is left exiting surface; Can be parallel to orientation substrate and form a scattering surface, and perpendicular to the parallel beam of exiting surface direction in substrate.
3. side light-emitting type light-emitting assembly encapsulating structure as claimed in claim 1; Wherein above-mentioned substrate is metal core printed circuit board (PCB), ceramic substrate or ultrathin substrate; The material of above-mentioned transparent mould member is epoxy resin or siloxanes, and the material of above-mentioned opaque die component is polyphthalamide or gathers butine.
4. the encapsulating structure of a luminescence component comprises:
One substrate; Have one first and one second, this first mask has one first electrode and one second electrode, and this second mask has a third electrode and one the 4th electrode; Wherein this first electrode and this third electrode electrically connect, and this second electrode and the 4th electrode electrically connect;
The semiconductor luminescence component is fixed on this substrate, and the P electrode of this semiconductor luminous assembly and this first electrode electrically connect, and the N electrode of this semiconductor luminous assembly and this second electrode electrically connect;
One transparent mould member, its outward appearance presents 1/4th spheroids, has a composition surface and an exiting surface, and this composition surface is in order to cover this semiconductor luminous assembly; And
One opaque die component covers this transparent mould member, makes the outward appearance of encapsulating structure of this luminescence component be cuboid, and the interface between this transparent mould member and this opaque die component provides this semiconductor
The reflecting surface of luminescence component makes this exiting surface perpendicular to this substrate.
5. light-emitting assembly packaging structure as claimed in claim 4 also comprises the fluorescent material that is positioned at this transparent mould member, in order to the light beam mixed light with this semiconductor luminous assembly produced.
6. light-emitting assembly packaging structure as claimed in claim 4 also comprises the phosphor that is positioned on this exiting surface, in order to the light beam mixed light with this semiconductor luminous assembly produced.
7. the structure of a luminescence component comprises:
One electrically-conductive backing plate has one first electrode and one second electrode;
The semiconductor luminescence component is fixed on this electrically-conductive backing plate, and the P electrode of this semiconductor luminous assembly and this first electrode electrically connect, and the N electrode of this semiconductor luminous assembly and this second electrode electrically connect;
One transparent mould member, its outward appearance presents 1/4th spheroids, has a composition surface and an exiting surface, and this composition surface is in order to cover this semiconductor luminous assembly; And
One opaque die component; Cover this transparent mould member; Make the outward appearance of encapsulating structure of this luminescence component be cuboid, the interface between this transparent mould member and this opaque die component provides the reflecting surface of this semiconductor luminous assembly, makes the exiting surface of this luminescence component perpendicular to this electrically-conductive backing plate.
8. method that forms side light-emitting type light-emitting assembly encapsulating structure comprises:
One substrate is provided; It has one first and one second, and this first mask has one first electrode and one second electrode, and this second mask has a third electrode and one the 4th electrode; Wherein this first electrode and this third electrode electrically connect, and this second electrode and the 4th electrode electrically connect;
Fixedly the semiconductor luminescence component is on this surface of first base, and the P electrode of this semiconductor luminous assembly and this first electrode electrically connect, and the N electrode of this semiconductor luminous assembly and this second electrode electrically connect;
Mode with the metaideophone moulding forms a transparent mould member on this substrate, and the outward appearance of this transparent mould member is 1/4th spheroids, has a composition surface and an exiting surface, and this composition surface is in order to cover this semiconductor luminous assembly; And
Mode with the metaideophone moulding forms an opaque die component, and this opaque die component covers this transparent mould member, makes the outward appearance of this light-emitting assembly packaging structure be cuboid.
9. method that forms side light-emitting type light-emitting assembly encapsulating structure comprises:
One substrate is provided; It has one first and one second; This first mask has a plurality of first electrodes and a plurality of second electrode; This second mask has a plurality of third electrodes and a plurality of the 4th electrode, and wherein this first electrode and this third electrode electrically connect, and this second electrode and the 4th electrode electrically connect;
Fixing a plurality of semiconductor luminous assemblies are on this surface of first base, and the P electrode of said a plurality of semiconductor luminous assemblies and this first electrode electrically connect, and the N electrode of said a plurality of semiconductor luminous assemblies and this second electrode electrically connect;
Mode with the metaideophone moulding forms a plurality of transparent mould members on this substrate; Each outward appearance of said a plurality of transparent mould members is 1/2nd spheroids; And have a composition surface and one 1/2nd ellipsoidal surface respectively, this composition surface is in order to cover two semiconductor luminous assemblies in said a plurality of semiconductor light-emitting-diode;
Mode with the metaideophone moulding forms a plurality of opaque die components, and said opaque die component covers on this transparent mould member; And
Cut said a plurality of opaque die component and form a plurality of light-emitting assembly packaging structures, wherein each light-emitting assembly packaging structure all has a composition surface and an exiting surface, makes the outward appearance of each light-emitting assembly packaging structure be cuboid.
10. method that forms light-emitting assembly packaging structure comprises:
One electrically-conductive backing plate is provided, and it has a plurality of first electrodes and a plurality of second electrode;
Fixing a plurality of semiconductor luminous assemblies are on this electrically-conductive backing plate, and the P electrode of said a plurality of semiconductor luminous assemblies and this first electrode electrically connect, and the N electrode of said a plurality of semiconductor luminous assemblies and this second electrode electrically connect;
Mode with the metaideophone moulding forms a plurality of transparent mould members; The outward appearance of each of said a plurality of transparent mould members presents 1/2nd spheroids; And have a composition surface and one 1/2nd ellipsoidal surface respectively, this composition surface is in order to cover two semiconductor luminous assemblies in said a plurality of semiconductor luminous assembly;
Mode with the metaideophone moulding forms a plurality of opaque die components, and it covers on this transparent mould member; And
Cut said a plurality of opaque die component and form a plurality of light-emitting assembly packaging structures; Wherein each light-emitting assembly packaging structure all has a composition surface and an exiting surface; Make the outward appearance of each light-emitting assembly packaging structure be cuboid; Interface between each transparent mould member and the opaque die component provides the reflecting surface of each semiconductor luminous assembly, makes the exiting surface of each luminescence component perpendicular to this substrate.
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| CN105742468B (en) * | 2012-04-27 | 2018-07-06 | 宁波港波电子有限公司 | Light-emitting diode encapsulation structure and its manufacturing method |
| CN103378279B (en) * | 2012-04-27 | 2016-08-31 | 上海力锐网络科技有限公司 | Package structure for LED manufacture method |
| CN105702830B (en) * | 2012-04-27 | 2018-06-08 | 江门市江海区康欣电子科技有限公司 | Light-emitting diode encapsulation structure and its manufacturing method |
| CN105742460B (en) * | 2012-04-27 | 2018-07-13 | 上海光纳电子科技有限公司 | Light-emitting diode encapsulation structure and its manufacturing method |
| CN103682066B (en) * | 2012-09-21 | 2016-08-03 | 展晶科技(深圳)有限公司 | Light emitting diode module and manufacture method thereof |
| CN106952992A (en) * | 2017-03-10 | 2017-07-14 | 厦门大学嘉庚学院 | A kind of LED encapsulating structure of side light extraction |
| CN110364608B (en) * | 2018-03-26 | 2022-02-25 | 行家光电股份有限公司 | Wafer level linear light source light emitting device |
| CN110289254A (en) | 2019-06-27 | 2019-09-27 | 京东方科技集团股份有限公司 | It is micro-led and preparation method thereof |
| CN114347395B (en) * | 2022-03-17 | 2022-06-03 | 威海嘉瑞光电科技股份有限公司 | Method for packaging semiconductor optical device and apparatus used therefor |
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