CN105742460B - Light-emitting diode encapsulation structure and its manufacturing method - Google Patents
Light-emitting diode encapsulation structure and its manufacturing method Download PDFInfo
- Publication number
- CN105742460B CN105742460B CN201610012880.3A CN201610012880A CN105742460B CN 105742460 B CN105742460 B CN 105742460B CN 201610012880 A CN201610012880 A CN 201610012880A CN 105742460 B CN105742460 B CN 105742460B
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- China
- Prior art keywords
- light
- reflector
- emitting diode
- substrate
- encapsulated layer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
Disclosed herein a kind of light-emitting diode encapsulation structure, including substrate, the electrode being formed on substrate, the light-emitting diode chip for backlight unit for being fixed on substrate and being electrically connected with the electrodes, the reflector being formed on substrate and covering luminousing diode chip in the encapsulated layer on substrate, the side of the reflector is formed with an opening, it is formed with reflecting layer on the top surface of the encapsulated layer, so that some light that light emitting diode is sent out is projected via reflector and/or reflecting layer reflection from the opening of reflector side.The invention further relates to a kind of manufacturing methods of light-emitting diode encapsulation structure.
Description
Technical field
The present invention relates to a kind of semiconductor package and its manufacturing method more particularly to a kind of LED package knots
Structure and its manufacturing method.
Background technology
Compared to traditional light emitting source, light emitting diode (Light Emitting Diode, LED) has light-weight, body
The advantages that product is small, pollution is low, long lifespan, as a kind of novel light emitting source, is applied more and more widely.
The demand of existing lighting device or display device to lateral light extraction light source is more and more, however existing laterally goes out
The light-emitting diode chip for backlight unit of original structure is installed in the side of device body with to lateral emergent light by radiant generally use
Line, or by increasing catoptric arrangement in the range of light-emitting diode chip for backlight unit emergent ray, the light to be laterally emitted.
However in both the above mode, the former needs to change the installation site of light-emitting diode chip for backlight unit, to need in lighting device
The circuit connection and spatial position arrangement in portion are redesigned, and the latter needs to reach by additional catoptric arrangement, this
Two ways is required to be adjusted the structure inside lighting device, keeps complicated integral structure, workload larger, and be unfavorable for
Batch production.
Invention content
In view of this, it is necessary to provide the light-emitting diodes of lateral light extraction a kind of simple in structure and suitable for batch production
Pipe encapsulating structure and its manufacturing method.
Light-emitting diode encapsulation structure manufacturing method of the present invention includes the following steps：A substrate is provided, if being opened up on substrate
Dry through-hole, and for filling metal material to form electrode, which includes one or two or more sets of, every group of through-hole in through-holes
Including at least four I-shaped through-holes, the first spacer region, each group sets of vias and group are formed between four through-holes are two neighboring
Between form the second spacer region, the width of the first spacer region is less than the width of the second spacer region；On the second spacer region of substrate
Reflector is formed, and makes each reflector around every group of through-hole within reflector, and makes each reflector around every group of through-hole
Within reflector；Several light-emitting diode chip for backlight unit are installed in the electrode in reflector and with substrate to be electrically connected；It is reflecting
Encapsulated layer is formed in cup；It is laid with reflecting layer on the top of encapsulated layer；And cutting substrate makes each reflector be divided into opposite
Two parts of opening.
The present invention light-emitting diode encapsulation structure be multiple light-emitting diode chip for backlight unit will be set in a reflector, and
Reflecting layer is set in the top surface of encapsulated layer, by the way that reflector is cut into two one side of something from centre.To in light emitting diode
The incision of chip side forms the opening that can make beam projecting, and obtaining can be from the light-emitting diode encapsulation structure of side light extraction.
The manufacturing method need not increase other designs and operation equipment, the LED package knot with the general positive light extraction of manufacture
The required steps and operations of structure are not much different, therefore the light-emitting diode encapsulation structure simplicity of lateral light extraction is manufactured than other,
Suitable for batch production, thus escapable cost, improve benefit.
With reference to the accompanying drawings, in conjunction with specific implementation mode, the invention will be further described.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of the light-emitting diode encapsulation structure of first embodiment of the invention.
Fig. 2 is the schematic top plan view of the light-emitting diode encapsulation structure in Fig. 1.
Fig. 3 is the diagrammatic cross-section of the light-emitting diode encapsulation structure of second embodiment of the invention.
In manufacturing processes of the Fig. 4 to Fig. 7 for the light-emitting diode encapsulation structure of an embodiment of the present invention obtained by each step
Light-emitting diode encapsulation structure diagrammatic cross-section.
Fig. 8 is the manufacturing method flow chart of the light-emitting diode encapsulation structure of an embodiment of the present invention.
Main element symbol description
Substrate 10,10a, 10b
First side 11
Second side 12
Third side 13
Four side 14
Through-hole 15a, 15b
First spacer region 16
Second spacer region 17
Electrode 20
First electrode 21
Second electrode 22
Insulating layer 23
Reflecting surface 24
Light-emitting diode chip for backlight unit 30
Reflector 40,40a
Opening 41
Encapsulated layer 50
Reflecting layer 60
Following specific implementation mode will be further illustrated the present invention in conjunction with above-mentioned attached drawing.
Specific implementation mode
Refer to Fig. 1, the light-emitting diode encapsulation structure that embodiment of the present invention provides comprising substrate 10, in substrate
Spaced two electrode 20, the light-emitting diode chip for backlight unit for being fixed on first substrate 10 and being electrically connected with electrode 20 on 10
30, the encapsulated layer 50 and one positioned at the reflector 40 of 30 side of light-emitting diode chip for backlight unit, covering luminousing diode chip 30 reflects
Layer 60.
10 generally rectangular shaped tabular of the substrate comprising four sides, first side 11, second side 12, third
Side 13 and four side 14, wherein first side 11 and third side 13 are opposite, and second side 12 and four side 14 are opposite.
The reflector 40 is formed in substrate 10 along the first side of the substrate 10 11, second side 12 and third side 13
On, to form an opening 41 at the four side of substrate 10, so that light is from the side of the light-emitting diode encapsulation structure
It projects.That is, an opening 41 is opened up on the reflector 40 of original 30 surrounding of circular light-emitting diode chip for backlight unit, to
Light is set to be projected from the opening 41.In other embodiments, the substrate 10 can also be circle, ellipse etc. other
Shape, then the opening 41 is to be formed in the reflector 40 around the substrate 10 in a side of light-emitting diode chip for backlight unit 30.
The encapsulated layer 50 is filled in the reflector 40, and at the opening of reflector 40 41 with the 4th side of substrate 10
Side is concordant.The top surface of the encapsulated layer 50 and the top surface of reflector 40 are coplanar.The reflecting layer 60 is laid in the top surface of encapsulated layer 50,
And with 30 face of light-emitting diode chip for backlight unit, the light that spontaneous luminous diode chip 30 is sent out to simultaneously directive reflecting layer 60 carries out instead
It penetrates.
A part of directive reflector 40 of all light that the light-emitting diode chip for backlight unit 30 is sent out, and it is anti-by reflector 40
It penetrates to project to the opening 41 at the four side 14 of substrate 10；Another part light directive reflecting layer 60, and by reflection
60 reflection of layer to the opening 41 at the four side 14 of substrate 10 to project.
Further, the electrode 20 includes the first electrode 21 and second electrode 22 of spaced setting, by the first electricity
The substrate 10 that pole 21 and second electrode 22 separate is formed as insulating layer 23.The first electrode 21 and second electrode 22 are exposed to substrate
10 upper surface, and first electrode 21 and second electrode 22 occupy the larger area in upper surface of substrate 10, also that is, first electrode
21 and second electrode 22 the area for being exposed to 10 upper surface of substrate be much larger than insulating layer 23 width.Due to 21 He of first electrode
Second electrode 22 is that metal material is made, therefore two electrodes 20 are exposed to the upper surface formation reflecting surface 24 of substrate 10.Through hair
After reflection of the light that luminous diode chip 30 is sent out via reflector 40 and/or reflecting layer 60, a part is emitted directly toward reflection
At the opening 41 of cup 40, and projected other than light-emitting diode encapsulation structure from the opening 41；Another part light directive substrate 10.
The upper surface of first electrode 21 and second electrode 22 is done as far as possible it is larger, to keep the light of directive substrate 10 as more as possible
Penetrate in first electrode 21 and the reflecting surface 24 of the formation of second electrode 22, it is final to be emitted to LED package from opening 41
Other than structure, to avoid substrate 10 from absorbing this some light, the loss of light is caused.
The light-emitting diode encapsulation structure that embodiment of the present invention provides is by one of LED source reflector 40
Side opens up an opening 41, other regions of light-emitting diode encapsulation structure in addition to opening 41 are closed, and further exists
The other surfaces that light in addition to opening 41 can be irradiated to, i.e. shape on the upper surface of reflector 40, reflecting layer 60 and substrate 10
At face that can be reflective, to which the light for making light-emitting diode chip for backlight unit 30 be sent out to all directions passes through the reflection of these reflectings surface most
It is projected from the opening of side 41 eventually, to form the light-emitting diode encapsulation structure of lateral light extraction.This is simple in structure, electrode 20
Installation position and connection type and generally a light emitting diode structure without too big difference so that the light emitting diode of present embodiment
Encapsulating structure haves no need to change original design and structure when being connected and fixed in circuit structure and other illuminating modules, have compared with
Strong versatility and adaptability.
The present invention also provides the manufacturing methods of above-mentioned light-emitting diode encapsulation structure, hereinafter, will be in conjunction with other accompanying drawings to this
Manufacturing method is described in detail.
Referring to Fig. 2, providing a monolith substrate 10a, several through-hole 15a are opened up on monolith substrate 10a, and logical in this
Electrode 20 is set in the 15a of hole.Monolith substrate 10a is in tabular.High molecular material or composite plate can be used in monolith substrate 10a
The materials such as material are made.Several through-hole 15a include one or two or more sets of, and every group of through-hole 15a includes at least four through-hole 15a.
In the present embodiment, the larger through-hole 15a in several apertures is offered on monolith substrate 10a, wherein four through-hole 15a are one
Group, the distances of four through-hole 15a between any two in every group of through-hole 15a are smaller to form the first spacer region 16.Each group through-hole 15a
The distance between outermost through-hole 15a it is larger, to form the second spacer region 17 for reflector 40 to be arranged, that is, first
The width of spacer region 16 is less than the width of the second spacer region 17.Metal material is filled in every group of through-hole 15a to form four mutually
The electrode 20 at interval.
Referring to Fig. 3, for the monolith substrate 10b that another embodiment of the present invention provides, offered on substrate 10b several
I-shaped through-hole 15b, to make the electrode being formed in through-hole 15b 20 in I-shaped, that is, the upper and lower surface of electrode 20 is more
It is exposed to other than the upper and lower surface of substrate 10b.Hair is further illustrated only by taking the substrate 10a in embodiment illustrated in fig. 2 as an example below
The manufacturing method of optical diode package structure.
Referring to Fig. 4, forming several reflector 40a on substrate 10a.Reflector 40a is formed in the second of substrate 10a
On spacer region 17, and around every group of through-hole 15a each group through-hole 15a rings to be located within reflector 40a.Reflector 40a's
Reflecting surface is self-reflection cup top surface to inclined surface tapered substrate 10a.
Referring to Fig. 5, by several light-emitting diode chip for backlight unit 30 be installed in reflector 40a and with the electrode of substrate 10a 20
It is electrically connected.In the present embodiment, the quantity for the light-emitting diode chip for backlight unit 30 installed in each reflector 40a is at least two
It is a.Each light-emitting diode chip for backlight unit 30 is electrically connected by way of die bond routing with two adjacent electrodes 20.Adjacent two electricity
It is spaced apart by insulating layer 23 between pole 20.In other embodiments, which can also utilize flip
Or the mode of eutectic is combined with electrode 20.
Referring to Fig. 6, forming 50 covering luminousing diode chip 30 of encapsulated layer in reflector 40a on substrate 10a.It should
Injection moulding can be used in encapsulated layer 50 or molded mode is formed.The top surface of the top surface and reflector 40a of the encapsulated layer 50
Concordantly, to form a common horizontal plane.
Referring to Fig. 7, forming a reflecting layer 60 in the top surface of encapsulated layer 50.The reflecting layer 60 uses metallic film material system
At can be the alloy of aluminium, silver or both.The top surface of encapsulated layer 50 and the top surface of reflector 40a are coplanar, and the reflecting layer 60 is certainly
The top surface of encapsulated layer 50 is laid with and extends on the top surface of reflector 40a.The reflecting layer 60 is by encapsulated layer 50 and reflector as a result,
The junction of 40a seals, and can avoid extraneous aqueous vapor or impurity enters from encapsulated layer 50 and the junctions reflector 40a in packaging body
Portion, and then avoid polluting light-emitting diode chip for backlight unit 30.The reflecting layer 60 can be used physical vaporous deposition (PVD,
Physical Vapor Deposition), pressing mold molding or spraying mode formed.The thickness in the reflecting layer 60 is micro- 0.03
Rice is between 2 microns (μm).
Referring to Fig. 8, cutting substrate 10a so that each reflector 40a is divided into two parts, cut place to form reflection
The opening 41 of cup 40a.It, can be first to being formed on the second spacer region 17 of substrate 10a and the second spacer region 17 in cutting process
Reflector 40a at carry out first time cutting, using each reflector 40a be boundary obtain several detach and complete reflector
40a；Second is carried out to each reflector 40a to cut, should cutting be for the second time by four electricity in each reflector 40a again
Pole 20 forms two light-emitting diode encapsulation structure with opposed open 41 from cutting from the first intermediate spacer region 16, such as schemes
Shown in 1.Certainly, in other embodiments, can in advance be set according to the position of the first spacer region 16 and the second spacer region 17
The distance of cutting blade carries out substrate 10a using multi-blade once to cut the lateral direction light emission that can be obtained several separation
Light-emitting diode encapsulation structure.
The light-emitting diode encapsulation structure of the present invention is that multiple light-emitting diode chip for backlight unit will be arranged in a reflector 40
30, and reflecting layer 60 is set in the top surface of encapsulated layer 50, by the way that reflector 40 is cut into two one side of something from centre.Thus
The incision of 30 side of light-emitting diode chip for backlight unit forms the opening 41 that can make beam projecting, and obtaining can be from luminous the two of side light extraction
Pole pipe encapsulating structure.The manufacturing method need not increase other designs and operation equipment, the hair with the general positive light extraction of manufacture
The required steps and operations of optical diode package structure are not much different, therefore the light emitting diode of lateral light extraction is manufactured than other
Encapsulating structure is easy, is suitable for batch production, thus escapable cost, improve benefit.
It is understood that for those of ordinary skill in the art, can be conceived with the technique according to the invention and be done
Go out various other corresponding changes and deformation, and all these changes and deformation should all belong to the protection model of the claims in the present invention
It encloses.
Claims (3)
1. a kind of light-emitting diode encapsulation structure manufacturing method, includes the following steps：
One substrate is provided, several through-holes are opened up on substrate, and filling metal material is to form electrode in through-holes, several through-holes
Including one or two or more sets of, every group of through-hole includes at least four through-holes, is in I-shaped, between four through-holes are two neighboring
The first spacer region is formed, forms the second spacer region between each group sets of vias and group, the width of the first spacer region is less than the second interval
The width in area；
Reflector is formed on the second spacer region of substrate, and makes each reflector around every group of through-hole within reflector；
Several light-emitting diode chip for backlight unit are installed in the electrode in reflector and with substrate to be electrically connected；
Encapsulated layer is formed in reflector, the top surface of the encapsulated layer and the either flush of reflector, to form a common water
Plane；
It is laid with reflecting layer on the top of encapsulated layer；And
Cutting substrate makes each reflector be divided into two parts with opposed open.
2. light-emitting diode encapsulation structure manufacturing method as described in claim 1, it is characterised in that：It is spread on the top of encapsulated layer
If the step of reflecting layer is to be laid with metallic film in the top surface of the encapsulated layer, the top surface of the encapsulated layer and the top surface of reflector are total
Face, the reflecting layer extend to the top surface of reflector from the top surface of encapsulated layer.
3. light-emitting diode encapsulation structure manufacturing method as claimed in claim 2, it is characterised in that：The thickness in the reflecting layer exists
Between 0.03 to 2 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610012880.3A CN105742460B (en) | 2012-04-27 | 2012-04-27 | Light-emitting diode encapsulation structure and its manufacturing method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610012880.3A CN105742460B (en) | 2012-04-27 | 2012-04-27 | Light-emitting diode encapsulation structure and its manufacturing method |
| CN201210127822.7A CN103378279B (en) | 2012-04-27 | 2012-04-27 | Package structure for LED manufacture method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210127822.7A Division CN103378279B (en) | 2012-04-27 | 2012-04-27 | Package structure for LED manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105742460A CN105742460A (en) | 2016-07-06 |
| CN105742460B true CN105742460B (en) | 2018-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610012880.3A Expired - Fee Related CN105742460B (en) | 2012-04-27 | 2012-04-27 | Light-emitting diode encapsulation structure and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105742460B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1201411C (en) * | 2001-06-11 | 2005-05-11 | 株式会社西铁城电子 | Illuminating device and mfg. method thereof |
| CN101826516A (en) * | 2009-03-02 | 2010-09-08 | 先进开发光电股份有限公司 | Side light-emitting type light-emitting assembly encapsulating structure and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100832956B1 (en) * | 2000-04-24 | 2008-05-27 | 로무 가부시키가이샤 | Edge-emitting light-emitting semiconductor device |
| CN102187485B (en) * | 2008-10-15 | 2013-07-03 | 株式会社小糸制作所 | Light-emitting module, manufacturing method for light-emitting module, and light fixture unit |
-
2012
- 2012-04-27 CN CN201610012880.3A patent/CN105742460B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1201411C (en) * | 2001-06-11 | 2005-05-11 | 株式会社西铁城电子 | Illuminating device and mfg. method thereof |
| CN101826516A (en) * | 2009-03-02 | 2010-09-08 | 先进开发光电股份有限公司 | Side light-emitting type light-emitting assembly encapsulating structure and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN105742460A (en) | 2016-07-06 |
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