JP2018018872A - 半導体装置の製造方法及び半導体装置の評価方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 230000007547 defect Effects 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000011084 recovery Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000005468 ion implantation Methods 0.000 claims description 48
- 238000001953 recrystallisation Methods 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000011156 evaluation Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
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- 230000000052 comparative effect Effects 0.000 description 5
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- 230000001133 acceleration Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
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- 239000007924 injection Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
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- 238000001459 lithography Methods 0.000 description 1
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Abstract
Description
前記形成するFin構造部の側壁に前記半導体シリコンの{111}面の端面が現れないように前記Fin構造部を加工することを特徴とする半導体装置の製造方法を提供する。
前記回復熱処理を550℃以上650℃以下の温度範囲で時間を変えて行い、該回復熱処理後に前記Fin構造部の断面をTEMで観察することにより、前記再結晶化の進行過程におけるイオン注入による欠陥の評価を行うことを特徴とする半導体装置の評価方法を提供する。
主面の面方位が(100)で、抵抗率10Ω・cmのボロンドープした直径200mmのシリコン基板を準備した。まず、このシリコン基板にレジストを塗布し、フォトリソグラフィーを行った。このときのノッチ位置は(110)方向であり、L&S(ラインとスペースが交互にあるパターン)はそのまま(110)方向に形成した。フォトリソグラフィーにおいてはネガレジストを選択し、ライン&スペースが1.2μmのパターンをシリコン基板の面内に形成した。このレジスト付きウェーハをドライエッチングにてエッチングし、硫酸過酸化水素混合液にてレジストを除去後、RCA洗浄を実施した。このときのドライエッチング条件は、CF4ベースにして圧力3000mTorr(400Pa)、300Wの出力条件とした。
主面の面方位が(100)で、抵抗率10Ω・cmのボロンドープした直径200mmのシリコン基板を準備した。まず、このシリコン基板にレジストを塗布し、フォトリソグラフィーを行った。このときのノッチ位置は(110)方向であり、L&Sはそのまま(110)方向に形成した。フォトリソグラフィーにおいてはネガレジストを選択し、ライン&スペースが1.2μmのパターンをシリコン基板の面内に形成した。このレジスト付きウェーハをドライエッチングにてエッチングし、硫酸過酸化水素混合液にてレジストを除去後、RCA洗浄を実施した。このときのドライエッチング条件は、HBrとCl2を1:1として、圧力1200mTorr(160Pa)、300Wの出力条件とした。このウェーハに加速電圧(加速エネルギー)を450keV、ドーズ量を1×1015atoms/cm2としてAsをL&Sの直上と左右の3方向から打ちこんだ。この構造の断面図を図4に示す。図4において、コントラストのついた濃い黒の部分が、As注入によりシリコンがアモルファス化した部分である。
Claims (4)
- 半導体シリコン基板上に、Fin構造部を形成し、該Fin構造部にイオン注入を行った後、前記半導体シリコン基板に回復熱処理を行い、前記Fin構造部のシリコンを再結晶化する半導体装置の製造方法であって、
前記形成するFin構造部の側壁に前記半導体シリコンの{111}面の端面が現れないように前記Fin構造部を加工することを特徴とする半導体装置の製造方法。 - 前記形成するFin構造部の側壁と該形成するFin構造部の底面のなす角度が、前記半導体シリコンの{111}面と前記形成するFin構造部の底面のなす角度より小さくなるように前記Fin構造部を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記半導体シリコン基板の主面の面方位を(100)とし、前記形成するFin構造部の側壁と該形成するFin構造部の底面のなす角度を54.7°未満にすることを特徴とする請求項1又は請求項2に記載の半導体装置の製造方法。
- 請求項1から請求項3のいずれか一項に記載の半導体装置の製造方法で製造した半導体装置の前記Fin構造部のイオン注入による欠陥を評価する方法であって、
前記回復熱処理を550℃以上650℃以下の温度範囲で時間を変えて行い、該回復熱処理後に前記Fin構造部の断面をTEMで観察することにより、前記再結晶化の進行過程におけるイオン注入による欠陥の評価を行うことを特徴とする半導体装置の評価方法。
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JP2016145979A JP6547702B2 (ja) | 2016-07-26 | 2016-07-26 | 半導体装置の製造方法及び半導体装置の評価方法 |
US16/318,223 US10886129B2 (en) | 2016-07-26 | 2017-07-03 | Method for manufacturing semiconductor device and method for evaluating semiconductor device |
PCT/JP2017/024362 WO2018020961A1 (ja) | 2016-07-26 | 2017-07-03 | 半導体装置の製造方法及び半導体装置の評価方法 |
KR1020197001998A KR102312816B1 (ko) | 2016-07-26 | 2017-07-03 | 반도체 장치의 제조방법 및 반도체 장치의 평가방법 |
CN201780046457.8A CN109564856B (zh) | 2016-07-26 | 2017-07-03 | 半导体装置的制造方法及半导体装置的评价方法 |
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WO2019155950A1 (ja) | 2018-02-06 | 2019-08-15 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物、半導体装置、及び半導体封止用樹脂組成物の製造方法 |
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