JP2017536477A - 金属の水平電気化学堆積法 - Google Patents
金属の水平電気化学堆積法 Download PDFInfo
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- JP2017536477A JP2017536477A JP2017521075A JP2017521075A JP2017536477A JP 2017536477 A JP2017536477 A JP 2017536477A JP 2017521075 A JP2017521075 A JP 2017521075A JP 2017521075 A JP2017521075 A JP 2017521075A JP 2017536477 A JP2017536477 A JP 2017536477A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 329
- 239000002184 metal Substances 0.000 title claims abstract description 329
- 238000004070 electrodeposition Methods 0.000 title claims description 107
- 150000002739 metals Chemical group 0.000 title description 28
- 238000000034 method Methods 0.000 claims abstract description 143
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 82
- 238000000151 deposition Methods 0.000 claims abstract description 65
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 133
- 239000007769 metal material Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 83
- 239000007788 liquid Substances 0.000 abstract description 24
- 230000009471 action Effects 0.000 abstract description 11
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 238000006479 redox reaction Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- 238000003487 electrochemical reaction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/011—Electroplating using electromagnetic wave irradiation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/026—Electroplating of selected surface areas using locally applied jets of electrolyte
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (9)
- 結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積(Horizontal Electrochemical Deposition of Metal)する方法であって、上部の金属陽極が金属の電気化学堆積される予定の結晶シリコン太陽電池の上部の陰極表面に置かれ、或いは、電解質溶液が上部の金属陽極に接触した後に、連続的に下へ金属の電気化学堆積される予定の結晶シリコン太陽電池の上部の陰極表面に流れ、電解質溶液が下部の金属陽極を浸漬した後に、金属の電気化学堆積される予定の結晶シリコン太陽電池の下部の陰極表面に接触し、或いは、電解質溶液が下部の金属陽極に接触した後に、連続的に、上へ金属の電気化学堆積される予定の結晶シリコン太陽電池の下部の陰極表面に噴射すること、を特徴とする結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 結晶シリコン太陽電池の上部の陰極表面は、上記結晶シリコン太陽電池が、光照を受けて電気エネルギーを発生させて、太陽電池の負極表面自体において生じる上部の陰極表面であり、上記結晶シリコン太陽電池の下部の陰極表面は、上記結晶シリコン太陽電池が外部電源の負極に接触した後に生じる下部の陰極表面であること、を特徴とする請求項1に記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記上部の金属陽極が金属の電気化学堆積される予定の結晶シリコン太陽電池の上部の陰極表面に置かれることは、上部の金属陽極を上部の金属陽極が上記結晶シリコン太陽電池の上部の陰極表面における電解質溶液に接触された後に、上記電解質溶液が前記下部の金属陽極を浸漬して、電気化学堆積される予定の結晶シリコン太陽電池の下部の陰極表面に接触し、あるいは、電解質溶液が下部の金属陽極に接触した後に、連続的に上へ金属の電気化学堆積される予定の結晶シリコン太陽電池の下部の陰極表面に噴射することは、下部の金属の陽極を金属の電気化学堆積される予定の結晶シリコン太陽電池の下部に置くこと、を特徴とする請求項1に記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記電解質溶液が上部の金属陽極を接触した後に、下へ連続的に金属の電気化学堆積される予定の結晶シリコン太陽電池の上部の陰極表面に流れることは、上部の金属陽極をいずれかの位置に置くことであり、電解質溶液がいずれかの位置の前記上部の金属陽極に接触した後に金属の電気化学堆積される予定の結晶シリコン太陽電池の上部の陰極表面に搬送することであること、を特徴とする請求項1に記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記金属の水平電気化学堆積法において、下部の金属陽極がなく、前記結晶シリコン太陽電池の下表面以外の陰極表面に対して金属の電気化学堆積を行い、或いは、上部の金属陽極がなく、前記結晶シリコン太陽電池の上表面以外の陰極表面に対して金属の電気化学堆積を行い、或いは、上部の金属陽極と下部の金属陽極とが共に存在し、結晶シリコン太陽電池のすべての陰極表面に対して金属の電気化学堆積を行うこと、を特徴とする請求項1、2、3又は4のいずれかに記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記結晶シリコン太陽電池の陰極表面に対して金属の電気化学堆積を行うことは、金属の光誘起電気化学堆積であり、あるいは、外部電源の金属の電気化学堆積であり、或いは、金属の光誘起電気化学堆積と外部電源の金属の電気化学堆積を同時に行うことであること、を特徴とする請求項1、2、3又は4のいずれかに記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記結晶シリコン太陽電池の陰極表面に対して金属の光誘起電気化学堆積を行うことは、外部電源の補助による金属の光誘起電気化学堆積であること、を特徴とする請求項6に記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記電解質溶液は、金属イオン、酸基、水及び添加剤を含むこと、を特徴とする請求項1、2、3又は4のいずれかに記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
- 前記上部の金属陽極及び下部の金属陽極は、可溶性陽極、又は非可溶性陽極であり、上部の金属陽極及び下部の金属陽極は、同一金属材料又は異なる金属材料であること、を特徴とする請求項1、2、3又は4のいずれかに記載の結晶シリコン太陽電池の陰極表面に対し金属を水平方向に電気化学堆積する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410557444.5A CN105590987B (zh) | 2014-10-20 | 2014-10-20 | 一种水平电化学沉积金属的方法 |
CN201410557444.5 | 2014-10-20 | ||
PCT/CN2015/091697 WO2016062206A1 (zh) | 2014-10-20 | 2015-10-11 | 一种水平电化学沉积金属的方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017536477A true JP2017536477A (ja) | 2017-12-07 |
JP6431980B2 JP6431980B2 (ja) | 2018-11-28 |
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JP2017521075A Active JP6431980B2 (ja) | 2014-10-20 | 2015-10-11 | 金属の水平電気化学堆積法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20170250295A1 (ja) |
EP (1) | EP3206236B1 (ja) |
JP (1) | JP6431980B2 (ja) |
CN (1) | CN105590987B (ja) |
WO (1) | WO2016062206A1 (ja) |
Families Citing this family (4)
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FR3057106B1 (fr) * | 2016-10-05 | 2018-11-09 | Electricite De France | Contacts perfectionnes d'une cellule photovoltaique a deux faces actives |
CN106784047A (zh) * | 2016-12-30 | 2017-05-31 | 苏州阿特斯阳光电力科技有限公司 | 一种局部掺杂晶体硅太阳能电池的制备方法及其制得的电池 |
US20200052135A1 (en) * | 2017-03-31 | 2020-02-13 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion element manufacturing method |
CN110528054B (zh) * | 2019-08-31 | 2021-05-18 | 江西豪越群电子有限公司 | 一种pcb板不停槽电沉积镍的装置和方法 |
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JPH10317186A (ja) * | 1997-05-15 | 1998-12-02 | Toyoda Gosei Co Ltd | 基材へのめっき方法 |
JP2001049488A (ja) * | 1999-06-03 | 2001-02-20 | Furukawa Electric Co Ltd:The | 部分めっき方法 |
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CN101789468B (zh) * | 2010-02-26 | 2011-07-20 | 华南师范大学 | 电刷镀制备太阳能电池阵列电极的方法 |
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DE102012221012B4 (de) * | 2012-11-16 | 2023-01-19 | Atotech Deutschland Gmbh | Vorrichtung und Verfahren zur Behandlung von flachem Behandlungsgut |
CN103834982B (zh) * | 2012-11-22 | 2016-10-05 | 宝山钢铁股份有限公司 | 一种水平式电镀槽及其电镀区阴阳极间隙自动补偿方法 |
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2014
- 2014-10-20 CN CN201410557444.5A patent/CN105590987B/zh active Active
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2015
- 2015-10-11 JP JP2017521075A patent/JP6431980B2/ja active Active
- 2015-10-11 EP EP15852603.8A patent/EP3206236B1/en active Active
- 2015-10-11 US US15/519,782 patent/US20170250295A1/en not_active Abandoned
- 2015-10-11 WO PCT/CN2015/091697 patent/WO2016062206A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10317186A (ja) * | 1997-05-15 | 1998-12-02 | Toyoda Gosei Co Ltd | 基材へのめっき方法 |
JP2001049488A (ja) * | 1999-06-03 | 2001-02-20 | Furukawa Electric Co Ltd:The | 部分めっき方法 |
US20110011745A1 (en) * | 2007-11-30 | 2011-01-20 | Wuxi Suntech Power Co., Ltd. | Method for electrochemically depositing a metal electrode of a solar cell |
JP2011505068A (ja) * | 2007-11-30 | 2011-02-17 | ウシ サンテック パワー カンパニー,リミティド | 太陽電池の金属電極の電気化学的堆積方法 |
JP2011066425A (ja) * | 2009-09-17 | 2011-03-31 | Schott Solar Ag | 基板をガルバニック・コーティングするための方法および装置 |
JP2013513021A (ja) * | 2009-12-03 | 2013-04-18 | ゾモント・ゲーエムベーハー | 電気めっき装置の中の処理材料に電気的に接触するための装置および方法 |
JP2013536986A (ja) * | 2010-09-02 | 2013-09-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ガリウムおよびガリウム合金膜の電着方法ならびに関連する光起電構造 |
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CN105590987B (zh) | 2022-06-14 |
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