JP5123394B2 - 太陽電池の金属電極の電気化学的堆積方法 - Google Patents
太陽電池の金属電極の電気化学的堆積方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 128
- 239000002184 metal Substances 0.000 title claims description 128
- 238000000034 method Methods 0.000 title claims description 90
- 238000004070 electrodeposition Methods 0.000 title claims description 19
- 239000008151 electrolyte solution Substances 0.000 claims description 97
- 239000007787 solid Substances 0.000 claims description 32
- 229910021645 metal ion Inorganic materials 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 5
- 239000003792 electrolyte Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 232
- 229940021013 electrolyte solution Drugs 0.000 description 81
- 230000008569 process Effects 0.000 description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 238000009713 electroplating Methods 0.000 description 25
- 238000005234 chemical deposition Methods 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000003487 electrochemical reaction Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 5
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 5
- 238000009776 industrial production Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LYWNNXMNOSKLHY-UHFFFAOYSA-N 4-hydroxy-2-methyl-5-propan-2-ylbenzenesulfonic acid Chemical compound CC(C)C1=CC(S(O)(=O)=O)=C(C)C=C1O LYWNNXMNOSKLHY-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Chemical group 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000010814 metallic waste Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical group Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate group Chemical group [N+](=O)([O-])[O-] NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/011—Electroplating using electromagnetic wave irradiation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Description
一、第1実施例
二、第2実施例
三、第3実施例
Claims (21)
- 陰極を含んだ太陽電池(30)の表面を電解質溶液(20)と接触させるステップであって、前記太陽電池(30)は、陰極の位置する表面以外の部分が、前記電解質溶液(20)と接触しないステップと、
太陽電池(30)の陽極を固体金属(50)に直接接続するステップと、
光源(60)を使用して太陽電池(30)の主受光面に光を照射するステップと、を含み、
前記電解質溶液(20)内の金属イオンが前記太陽電池(30)の陰極表面から生じた電子を受け取って金属を生成し、前記太陽電池(30)の陰極表面に堆積されるとともに、前記固体金属(50)が前記太陽電池(30)の陽極に電子を供給する同時に、金属イオンとして電解質溶液(20)に溶解される、ことを特徴とする太陽電池の金属電極の電気化学的堆積方法。 - 前記太陽電池(30)は、前記電解質溶液(20)と接触する表面が、陰極のみを含んでいることを特徴とする請求項1に記載の方法。
- 前記太陽電池(30)は、前記電解質溶液(20)と接触する表面が、陰極と陽極の双方を含んでいることを特徴とする請求項1に記載の方法。
- 前記電解質溶液(20)は、金属イオン、酸基、水および添加剤を含むことを特徴とする請求項1に記載の方法。
- 前記電解質溶液(20)は、少なくとも1種の金属イオンを含むことを特徴とする請求項4に記載の方法。
- 前記電解質溶液(20)は、少なくとも1種の酸基を含むことを特徴とする請求項4に記載の方法。
- 前記電解質溶液(20)は、少なくとも1種の添加剤を含むことを特徴とする請求項4に記載の方法。
- 前記主受光面は、該太陽電池(30)の前記電解質溶液(20)と接触する表面であることを特徴とする請求項1に記載の方法。
- 前記主受光面は、該太陽電池(30)の前記電解質溶液(20)と接触しない表面であることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光照射の光源(60)は、自然光、又は照明装置から発射された光であることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光は直接太陽電池(30)の表面に照射されることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光は、電解質又はその他の媒体を透過して太陽電池(30)の表面に照射されることを特徴とする請求項1に記載の方法。
- 前記太陽電池(30)の陽極と前記固体金属(50)とは、導線(40)によって直接電気的に接続されていることを特徴とする請求項1に記載の方法。
- 前記固体金属(50)は、少なくとも1種の金属からなることを特徴とする請求項1又は13に記載の方法。
- 前記固体金属(50)は、少なくとも一表面が前記電解質溶液(20)と接触することを特徴とする請求項1又は13に記載の方法。
- 該方法は、さらに太陽電池(30)の陽極と固体金属(50)との間に外部電源を接続するステップを含むことを特徴とする請求項1に記載の方法。
- 前記外部電源は、負極が前記太陽電池(30)の陽極に接続され、正極が前記固体金属(50)に接続された直流電源であることを特徴とする請求項16に記載の方法。
- 前記直流電源の出力パワーは0より大きいであることを特徴とする請求項17に記載の方法。
- 該固体金属(50)の成分は、太陽電池(30)の陰極表面に堆積される金属の成分と同様であることを特徴とする請求項1に記載の方法。
- 前記太陽電池(30)は、電解質溶液(20)の上方に固定されることを特徴とする請求項1に記載の方法。
- 前記太陽電池(30)は、水平方向に移動可能であることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710188267.8 | 2007-11-30 | ||
CN2007101882678A CN101257059B (zh) | 2007-11-30 | 2007-11-30 | 一种电化学沉积太阳能电池金属电极的方法 |
PCT/CN2008/000220 WO2009070945A1 (fr) | 2007-11-30 | 2008-01-29 | Procédé de dépôt électrochimique d'électrode métallique d'une photopile |
Publications (2)
Publication Number | Publication Date |
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JP2011505068A JP2011505068A (ja) | 2011-02-17 |
JP5123394B2 true JP5123394B2 (ja) | 2013-01-23 |
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JP2010535196A Expired - Fee Related JP5123394B2 (ja) | 2007-11-30 | 2008-01-29 | 太陽電池の金属電極の電気化学的堆積方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US20110011745A1 (ja) |
EP (1) | EP2216823A1 (ja) |
JP (1) | JP5123394B2 (ja) |
KR (1) | KR101125418B1 (ja) |
CN (1) | CN101257059B (ja) |
AU (1) | AU2008331357B2 (ja) |
CA (1) | CA2707242A1 (ja) |
EA (1) | EA201000760A1 (ja) |
UA (1) | UA100533C2 (ja) |
WO (1) | WO2009070945A1 (ja) |
Families Citing this family (27)
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CN101409312B (zh) * | 2008-10-20 | 2010-04-21 | 东方日升新能源股份有限公司 | 一种单晶硅片制绒的方法 |
LU91561B1 (en) * | 2009-04-30 | 2010-11-02 | Univ Luxembourg | Electrical and opto-electrical characterisation oflarge-area semiconductor devices. |
CN102460656B (zh) * | 2009-06-02 | 2015-02-11 | 三菱电机株式会社 | 太阳能电池的制造方法 |
US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
US20110195542A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Method of providing solar cell electrode by electroless plating and an activator used therein |
CN101807625B (zh) * | 2010-02-26 | 2012-05-09 | 华南师范大学 | 一种晶体硅太阳能电池栅状阵列电极的制造方法 |
US8795502B2 (en) * | 2010-05-12 | 2014-08-05 | International Business Machines Corporation | Electrodeposition under illumination without electrical contacts |
US9085829B2 (en) * | 2010-08-31 | 2015-07-21 | International Business Machines Corporation | Electrodeposition of thin-film cells containing non-toxic elements |
DE102010042642B4 (de) * | 2010-10-19 | 2013-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur galvanischen Beschichtung von Substraten und Solarzellen |
JP5996244B2 (ja) * | 2011-04-19 | 2016-09-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 半導体上の銅のめっき |
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FR2995451B1 (fr) * | 2012-09-11 | 2014-10-24 | Commissariat Energie Atomique | Procede de metallisation d'une cellule photovoltaique et cellule photovoltaique ainsi obtenue |
CN102956749A (zh) * | 2012-11-20 | 2013-03-06 | 泰通(泰州)工业有限公司 | 一种太阳能电池电极的制备工艺 |
CN104178787A (zh) * | 2013-05-26 | 2014-12-03 | 无锡尚德太阳能电力有限公司 | 一种太阳电池镀膜设备以及镀膜方法 |
CN103311558B (zh) * | 2013-05-30 | 2015-09-30 | 中国科学院宁波材料技术与工程研究所 | 一种固体氧化物燃料电池发电系统中的电堆阵列 |
CN103996752B (zh) * | 2014-06-10 | 2016-04-13 | 中节能太阳能科技(镇江)有限公司 | 一种太阳能电池正电极栅线制备方法 |
KR101575068B1 (ko) * | 2014-09-16 | 2015-12-07 | 주식회사 호진플라텍 | 광유도 도금 및 순방향 바이어스 도금을 병행하는 태양전지 기판용 도금장치 |
CN105590987B (zh) * | 2014-10-20 | 2022-06-14 | 苏州易益新能源科技有限公司 | 一种水平电化学沉积金属的方法 |
CN106531817A (zh) * | 2015-09-08 | 2017-03-22 | 英属开曼群岛商精曜有限公司 | 半导体元件及其制作方法 |
CN105762069A (zh) * | 2016-02-04 | 2016-07-13 | 浙江大学 | 一种使用电化学沉积在半导体衬底表面选择性生长金属的方法 |
WO2018044930A1 (en) * | 2016-08-29 | 2018-03-08 | Board Of Trustees Of The University Of Arkansas | Light-directed electrochemical patterning of copper structures |
CN108604616B (zh) * | 2016-12-27 | 2023-03-24 | 中国建材国际工程集团有限公司 | 用于可视化半成品CdTe薄膜太阳能电池中缺陷的方法 |
KR102011041B1 (ko) * | 2017-09-12 | 2019-08-14 | 한국과학기술연구원 | 화합물 박막 제조 방법, 이로부터 제조된 화합물 박막 및 이러한 화합물 박막을 포함하는 태양 전지 |
US11031517B2 (en) | 2017-11-08 | 2021-06-08 | Korea Institute Of Science And Technology | Method of manufacturing light transmission type compound thin film, compound thin film manufactured therefrom, and solar cell including the same |
WO2019093558A1 (ko) * | 2017-11-08 | 2019-05-16 | 한국과학기술연구원 | 투광형 화합물 박막 제조 방법, 이로부터 제조된 화합물 박막 및 이러한 화합물 박막을 포함하는 태양 전지 |
CN111826692A (zh) * | 2020-07-08 | 2020-10-27 | 苏州太阳井新能源有限公司 | 一种光伏电池光诱导或光辅助电镀的方法 |
CN113502513B (zh) * | 2021-08-12 | 2023-05-30 | 辽宁大学 | 一种利用太阳能直接沉积铜金属的方法 |
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US4144139A (en) * | 1977-11-30 | 1979-03-13 | Solarex Corporation | Method of plating by means of light |
JPS55118680A (en) * | 1979-03-02 | 1980-09-11 | Motorola Inc | Electrically plating method |
US4321283A (en) * | 1979-10-26 | 1982-03-23 | Mobil Tyco Solar Energy Corporation | Nickel plating method |
US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
US4507181A (en) * | 1984-02-17 | 1985-03-26 | Energy Conversion Devices, Inc. | Method of electro-coating a semiconductor device |
JP4172149B2 (ja) * | 2000-09-22 | 2008-10-29 | 富士ゼロックス株式会社 | 低電位電着用電着液及びこれを用いた電着方法 |
CN100576578C (zh) * | 2006-04-20 | 2009-12-30 | 无锡尚德太阳能电力有限公司 | 制备太阳电池电极的方法及其电化学沉积装置 |
US20070256937A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Apparatus and method for electrochemical processing of thin films on resistive substrates |
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JP2011505068A (ja) | 2011-02-17 |
KR20100089898A (ko) | 2010-08-12 |
WO2009070945A1 (fr) | 2009-06-11 |
AU2008331357A1 (en) | 2009-06-11 |
US20110011745A1 (en) | 2011-01-20 |
CN101257059A (zh) | 2008-09-03 |
AU2008331357B2 (en) | 2012-05-31 |
EP2216823A1 (en) | 2010-08-11 |
CA2707242A1 (en) | 2009-06-11 |
KR101125418B1 (ko) | 2012-03-27 |
UA100533C2 (ru) | 2013-01-10 |
EA201000760A1 (ru) | 2010-12-30 |
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