CN105283963B - 太阳能电池中金属结构的形成 - Google Patents
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- 230000015572 biosynthetic process Effects 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 title description 9
- 239000002184 metal Substances 0.000 title description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 78
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 77
- 239000004411 aluminium Substances 0.000 claims abstract description 70
- 238000007747 plating Methods 0.000 claims abstract description 50
- 238000003475 lamination Methods 0.000 claims abstract description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 43
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 24
- 229940098779 methanesulfonic acid Drugs 0.000 claims abstract description 22
- 239000003115 supporting electrolyte Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- SDFNZYMSEOUVIF-UHFFFAOYSA-N copper;methanesulfonic acid Chemical compound [Cu].CS(O)(=O)=O SDFNZYMSEOUVIF-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 30
- 210000004027 cell Anatomy 0.000 description 29
- 239000010410 layer Substances 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001000 micrograph Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 206010068052 Mosaicism Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910000329 aluminium sulfate Inorganic materials 0.000 description 2
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000003765 sex chromosome Anatomy 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- WAKTWVHWRCNIKU-UHFFFAOYSA-N S(=O)(=O)(O)O.[AlH3] Chemical compound S(=O)(=O)(O)O.[AlH3] WAKTWVHWRCNIKU-UHFFFAOYSA-N 0.000 description 1
- 229910006069 SO3H Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 accelerator Substances 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明提供了一种太阳能电池的金属触点，所述金属触点是通过电镀铜而形成，所述电镀使用形成于电介质层上的电镀晶种(211)。所述电镀晶种包括铝层，所述铝层通过所述电介质层中的接触孔连接到所述太阳能电池的扩散区。在所述铝层上形成镍层，所述镍层‑铝层堆叠形成所述电镀晶种(212)。所述铜是在镀铜液中被电镀的，所述镀铜液使用甲磺酸代替硫酸作为支持电解质(213)。
Description
技术领域
本文所述主题的实施例整体涉及太阳能电池。更具体地讲，所述主题的实施例涉及太阳能电池制造工艺和结构。
背景技术
太阳能电池是熟知的用于将太阳辐射转换成电能的装置。太阳能电池具有正面和与正面相对的背面，所述正面在正常操作期间面向太阳以收集太阳辐射。照射在太阳能电池上的太阳辐射产生可用于为外部电路(诸如负载)供电的电荷。可通过金属触点将外部电路电连接到太阳能电池的扩散区。
发明内容
在一个实施例中，通过电镀铜形成了太阳能电池的金属触点，所述电镀使用形成于电介质层上的电镀晶种。该电镀晶种包括铝层，该铝层通过电介质层中的接触孔连接到太阳能电池的扩散区。在铝层上形成镍层，镍层-铝层堆叠形成所述电镀晶种。铜是在镀铜液中被电镀的，所述镀铜液使用甲磺酸代替硫酸作为支持电解质。
本领域的技术人员在阅读包括附图和权利要求书的本公开全文之后，本公开的这些和其他特征对于他们而言将是显而易见的。
附图说明
当结合以下附图考虑时，通过参见具体实施方式和权利要求书可以更完全地理解所述主题，其中在所有附图中，类似的附图标记是指类似的元件。
图1至图3示出铝电镀晶种的显微图，其中铝电镀晶种暴露于硫酸。
图4至图7示出剖视图，这些剖视图示意性地示出根据本发明实施例的太阳能电池的制造。
图8示出根据本发明实施例的形成太阳能电池金属结构的方法的流程图。
图9至图11示出电镀铝晶种的显微图，其中电镀铝晶种暴露于甲磺酸而非硫酸。
具体实施方式
在本发明中，提供了许多具体的细节，诸如材料、工艺步骤和结构的例子，以提供对实施例的全面理解。然而，所属领域的技术人员将认识到，可在不具有这些具体细节中的一个或多个的情况下实践本发明。在其他情况下，未示出或描述为人们所熟知的细节，以避免使本发明的方面模糊不清。
为了使太阳能比其他能源更具商业利益，需要以相对低的成本和高的产率来制造太阳能电池。降低太阳能电池制造成本的一种方法是使用印刷铝作为铜金属触点的电镀晶种。然而，当铝暴露于电镀铜工艺中通常采用的高酸性镀铜液时，铝会存在粘合性问题。
图1至图3以铝的显微图的形式示出了粘合性问题。印刷铝暴露于200g/l的硫酸，这是一些工业镀铜液的硫酸含量。图1是铝的平面图；图2和图3是铝的剖视图。如图1至图3所示，铝(参见箭头103)受到了严重的攻击，而与铝一起形成电镀晶种的镍(见箭头101)和糊状粘合剂(参见箭头102)并没有受到影响。此结果可通过铝和硫酸的如下反应来解释：
2Al(s)+3H2SO4(aq)→2Al3(aq)+3SO4 2-(aq)+3H2(g)
其中ΔG(rxn)＝-971.0kJ/mol
电镀晶种中的铝具有薄而致密的氧化铝层，可能需要先将该氧化铝层渗透才能发生上述化学反应。氧化铝与硫酸的反应由下式给出：
Al2O3+3H2SO4→Al2(SO4)3+3H2O
其中ΔG(rxn)＝-100.5kJ/mol
铝和氧化铝反应的负的ΔG(rxn)(即，负的吉布斯自由能)表明当铝和氧化铝暴露于硫酸时将发生腐蚀。
图4至图7示出剖视图，这些剖视图示意性地示出根据一个实施例的太阳能电池200的制造。图4至图7未按比例绘制，以便更清楚地说明该实施例的特征。
参见图4，太阳能电池200包括太阳能电池基板201和扩散区202。基板201可以包含单晶硅，例如N型硅片。为了图示清晰起见，仅示出了一种类型的扩散区202。正如可以理解的，太阳能电池通常包括多个P型扩散区和多个N型扩散区。在一个实施例中以及如图4所示，扩散区202在基板201内形成。在另一个实施例中(未示出)，扩散区202在基板201的外部。例如，扩散区202可包含形成在基板201背侧表面上的掺杂多晶硅。在该例子中，可在多晶硅和基板201之间形成薄的电介质层(例如，热氧化物)。
太阳能电池200具有正面121和与正面121相对的背面122，所述正面在正常操作期间面向太阳以收集太阳辐射。在一个实施例中，太阳能电池200是完全背接触式的太阳能电池，即所有扩散区和连接到扩散区的金属触点都在背面122上。然而应当注意，本发明所公开的技术可同样应用于其他类型的太阳能电池。例如，在其他实施例中，太阳能电池200在背面122上具有一种极性的扩散区202，在正面121上具有另一种极性的另一扩散区。
仍然参见图4，电介质层203在扩散区202上形成。电介质层203可包括一层或多层介电材料。例如，电介质层203可包含形成约40nm厚度的氮化硅或氧化硅。穿过电介质层203形成有多个接触孔204，以暴露出太阳能电池200的扩散区202和其他扩散区在不减损本发明优点的前提下，可通过激光烧蚀、光刻和其他接触孔形成工艺形成接触孔204。
在图5中，在背面122上形成铝层205以电连接到扩散区202。在一个实施例中，铝层205被印刷在电介质层203上并印刷到接触孔204中。例如，通过丝网印刷，铝层205可形成1至50μm，诸如约10μm的厚度。然后可直接在铝层205的背侧表面上形成氧化铝层123。可直接在扩散区202上形成铝层205。
在图6中，在铝层205上形成镍层206，使得镍层206的表面直接在氧化铝层123上。可通过无电镀、电解电镀，或其他沉积工艺形成镍层206。可在铝层205上形成厚度为0.1至10μm，诸如约2μm的镍层206。镍层206和铝层205在诸如形成连接到扩散区202的金属触点的过程中，形成用于电镀铜的电镀晶种124。镍层206作为粘合层，促进电镀的铜粘合到电镀晶种124。
在图7中，在太阳能电池200的背面122上形成铜层207，以电连接到扩散区202。在一个实施例中，通过在含有甲磺酸但不含硫酸的镀铜液中进行电镀而形成铜层207。更具体地讲，甲磺酸取代了硫酸，作为镀铜液的支持电解质。例如，可将镀铜液中的硫酸替换为等量的甲磺酸以保持相同的镀液酸度。甲磺酸与铝的反应由下式给出：
2Al(s)+6CH3SO3H(aq)→2Al3+(aq)+6CH3SO3-(aq)+3H2(g)
其中ΔG(rxn)＝-1039.4kJ/mol
甲磺酸与氧化铝的反应由下式给出：
Al2O3+3CH3SO4H→Al2(SO4)3+3CH4
其中ΔG(rxn)＝459.3kJ/mol
尽管甲磺酸与铝的反应仍然得到负的ΔG(rxn)，但甲磺酸与氧化铝的反应得到正的ΔG(rxn)。正的ΔG(rxn)表示甲磺酸不会明显腐蚀氧化铝。因此，氧化铝层123保护铝层205免受甲磺酸的攻击。
应当注意，尽管铝层205上有镍层206，但镍层206是多孔的，因而允许甲磺酸(或者是其他镀液中的硫酸)渗透并腐蚀铝层205。因此，当电镀晶种包括镍作为粘合层时，甲磺酸镀铜液可能是有利的。
在一个实施例中，在铜层207的电镀中采用的甲磺酸镀铜液包含甲磺酸(MSA)、Cu-MSA、盐酸以及标准商用电镀有机添加剂，诸如促进剂、抑制剂、整平剂、增白剂和晶粒细化剂。甲磺酸镀铜液的pH值可为约-0.6，但其pH值通常小于1。这种甲磺酸镀铜液可从例如OM集团公司(OM Group,Inc.)商购获得。在不减损本发明优点的前提下，还可以采用其他合适的含有甲磺酸且不含硫酸的镀铜液。
在一个实施例中，使用电镀晶种124将铜层207电镀至10至80μm，诸如约35μm的厚度。例如，可通过在电镀过程中将图6的样品浸渍在甲磺酸镀铜液中，采用约40ASF(安培每平方英尺)的电流，在25℃下形成铜层207，但也可以采用例如高达200ASF的电流，在80℃下形成铜层207。
在一个实施例中，铜层207电连接到扩散区202，并用作太阳能电池200的金属触点。正如可以理解的，可使用适当的掩模对铜层207进行图案化或电镀，使铜层根据太阳能电池200的细节而具有多种形状。例如，当扩散区202为P型扩散区时，铜层207可被构造为正金属触指，该触指与电连接到N型扩散区的另一铜金属触指相互交叉。
图8示出了根据实施例的形成太阳能电池金属结构的方法的流程图。在图8的例子中，在所制造的太阳能电池的背面上形成铝层(步骤211)。可通过例如丝网印刷来形成铝层。在一个实施例中，铝层被丝网印刷到电介质层上和接触孔中，所述接触孔穿过电介质层形成以电连接到扩散区。铝层包括铝层的背侧面向表面上的氧化铝层。
然后在铝层上形成镍层(步骤212)。在一个实施例中，镍层和铝层形成用于后续电镀铜层的电镀晶种。
通过在含有甲磺酸而不含硫酸的镀铜液中电镀铜来形成太阳能电池的金属触点(步骤213)。如本领域的普通技术人员应理解的，“无硫酸”或“不含硫酸”意指镀铜液具有零含量的硫酸，或者参与反应的和腐蚀氧化铝的硫酸的量不可测量。铜被电镀到电镀晶种上，以电连接到太阳能电池的扩散区。
本文所述的技术可有利于改进太阳能电池各层的粘合性。这种粘合性的改进可通过如图9至图11所示的电镀晶种腐蚀的减少来证明。
图9至图11示出铝电镀晶种的显微图，其类似于图1至图3中的铝电镀晶种，不同的是在图9至图11中，用等量的甲磺酸取代了硫酸。图9是镀镍铝的平面图；图10和图11是铝的剖视图。如图9至图11所示，形成电镀晶种的铝(参见箭头113)、镍(参见箭头111)和粘合剂(参见箭头112)未被甲磺酸腐蚀。
已经公开了用于形成太阳能电池金属结构的方法和结构。虽然已提供本发明的具体实施例，但应理解，这些实施例是出于图解目的而非限制目的。对于所属领域的技术人员在阅读本公开内容时，许多额外实施例将是显而易见的。
Claims (20)
1.一种制造太阳能电池的方法，所述方法包括：
在电介质层上形成铝层以通过所述电介质层中的接触孔连接到所述太阳能电池的扩散区；
在所述铝层上形成氧化铝层；
形成电镀晶种，其中所述形成电镀晶种包括在所述氧化铝层上形成镍层；以及
形成连接到所述太阳能电池的所述扩散区的金属触点，其中形成所述金属触点包括在所述太阳能电池的背面上电镀铜层，其中所述铜层在包含甲磺酸而不含硫酸的镀铜液中被电镀。
2.根据权利要求1所述的方法，其中所述镍层镀在所述氧化铝层上。
3.根据权利要求1所述的方法，其中所述形成铝层包括在含有氧化硅的所述电介质层上形成所述铝层。
4.根据权利要求1所述的方法，其中所述形成铝层包括在所述电介质层上印刷所述铝层。
5.根据权利要求4所述的方法，其中所述印刷所述铝层包括在所述电介质层上丝网印刷所述铝层。
6.根据权利要求1所述的方法，其中所述在电介质层上形成铝层包括：在所述电介质层上形成所述铝层，以连接到在所述太阳能电池的基板内形成的扩散区。
7.根据权利要求1所述的方法，其中所述在电介质层上形成铝层包括：在形成于太阳能电池基板上的所述电介质层上形成所述铝层，其中所述太阳能电池基板包含单晶硅。
8.一种制造太阳能电池的方法，所述方法包括：
在太阳能电池基板上形成电介质层；
形成穿过所述电介质层的接触孔，以暴露出所述太阳能电池的扩散区；
在所述电介质层上以及所述接触孔中形成铝层，以连接到所述扩散区；
在所述铝层上形成氧化铝层；以及
使用其上形成有氧化铝层的所述铝层作为电镀晶种，在含有甲磺酸的镀铜液中电镀铜层。
9.根据权利要求8所述的方法，其中所述电镀铜层包括在不含硫酸的电镀液中电镀所述铜层。
10.根据权利要求8所述的方法，还包括：
在所述氧化铝层上形成镍层，其中所述铜层被电镀到所述镍层上。
11.根据权利要求10所述的方法，其中所述形成镍层包括将所述镍层镀在所述氧化铝层上。
12.根据权利要求8所述的方法，其中所述形成铝层包括在所述电介质层上印刷所述铝层。
13.根据权利要求8所述的方法，其中所述形成铝层包括在所述电介质层上丝网印刷所述铝层。
14.根据权利要求8所述的方法，其中所述形成铝层包括：形成所述铝层以连接到在所述太阳能电池基板内形成的所述扩散区。
15.根据权利要求8所述的方法，其中所述形成电介质层包括在含有单晶硅的所述太阳能电池基板上形成所述电介质层。
16.一种制造太阳能电池的方法，所述方法包括：
在所述太阳能电池的电介质层上形成铝层；
在所述铝层上形成氧化铝层；以及
使用其上形成有氧化铝层的所述铝层作为电镀晶种，在具有包含甲磺酸的支持电解质的镀铜液中电镀铜层。
17.根据权利要求16所述的方法，其中所述电镀铜层包括在不含硫酸的镀铜液中电镀所述铜层。
18.根据权利要求16所述的方法，其中所述形成铝层包括在所述电介质层上印刷所述铝层。
19.根据权利要求16所述的方法，还包括：
在所述氧化铝层上形成镍层，以形成所述电镀晶种。
20.根据权利要求16所述的方法，其中所述电镀铜层包括：电镀所述铜层以连接到所述太阳能电池的扩散区。
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| US13/931,520 US8945978B2 (en) | 2013-06-28 | 2013-06-28 | Formation of metal structures in solar cells |
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| PCT/US2014/041973 WO2014209617A1 (en) | 2013-06-28 | 2014-06-11 | Formation of metal structures in solar cells |
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| Country | Link |
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| KR (1) | KR102245585B1 (zh) |
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| USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
| US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
| USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
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| USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
| USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
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Family Cites Families (25)
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| JPS58151465A (ja) * | 1982-03-03 | 1983-09-08 | Sanwa Bousei Kk | 片面めつき方法 |
| KR100840451B1 (ko) * | 1999-03-19 | 2008-06-20 | 테크닉,인코포레이티드 | 수성 전기도금욕, 수성 전기도금욕의 제조 방법, 및 그 수성 전기도금욕을 이용한 도금 방법 |
| US7388147B2 (en) | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
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| JP2011504650A (ja) * | 2007-10-18 | 2011-02-10 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 導電性調合物 |
| JP5357442B2 (ja) * | 2008-04-09 | 2013-12-04 | 東京応化工業株式会社 | インクジェット用拡散剤組成物、当該組成物を用いた電極及び太陽電池の製造方法 |
| US20100055422A1 (en) * | 2008-08-28 | 2010-03-04 | Bob Kong | Electroless Deposition of Platinum on Copper |
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| US8779280B2 (en) | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| EP2485289B1 (en) * | 2009-09-30 | 2021-03-03 | Sumitomo Chemical Co., Ltd | Laminated structure, polymer, electroluminescent element, and photoelectric conversion element |
| EP2495770A1 (en) * | 2009-10-28 | 2012-09-05 | Hitachi Chemical Company, Ltd. | Method for producing solar cell |
| US20110108115A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Forming a Photovoltaic Device |
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| US8367555B2 (en) * | 2009-12-11 | 2013-02-05 | International Business Machines Corporation | Removal of masking material |
| US8426241B2 (en) * | 2010-09-09 | 2013-04-23 | International Business Machines Corporation | Structure and method of fabricating a CZTS photovoltaic device by electrodeposition |
| US8329575B2 (en) | 2010-12-22 | 2012-12-11 | Applied Materials, Inc. | Fabrication of through-silicon vias on silicon wafers |
| KR101705734B1 (ko) * | 2011-02-18 | 2017-02-14 | 삼성전자주식회사 | 구리 도금 용액 및 이것을 이용한 구리 도금 방법 |
| WO2012161135A1 (ja) * | 2011-05-26 | 2012-11-29 | 日立化成工業株式会社 | 半導体基板用パッシベーション膜形成用材料、半導体基板用パッシベーション膜及びその製造方法、並びに太陽電池素子及びその製造方法 |
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