JP2017534184A - 2層光発電デバイス - Google Patents
2層光発電デバイス Download PDFInfo
- Publication number
- JP2017534184A JP2017534184A JP2017542291A JP2017542291A JP2017534184A JP 2017534184 A JP2017534184 A JP 2017534184A JP 2017542291 A JP2017542291 A JP 2017542291A JP 2017542291 A JP2017542291 A JP 2017542291A JP 2017534184 A JP2017534184 A JP 2017534184A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- thin film
- cell
- bulk
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 146
- 239000002070 nanowire Substances 0.000 claims abstract description 84
- 230000003595 spectral effect Effects 0.000 claims abstract description 31
- 238000010521 absorption reaction Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 14
- 239000013590 bulk material Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 328
- 238000013461 design Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021427 silicon allotrope Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000036561 sun exposure Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (18)
- ハイブリッド光発電デバイス(1)であって、
縦に整列したナノワイア(25)のアレイを含む第1の層(21)内に配置された薄膜太陽電池(2)であって、前記ナノワイアが第1のスペクトル範囲に対応する第1のバンドギャップを有する接合を有し、前記ナノワイア(25)が吸収領域を形成し、非吸収領域が前記ナノワイア間に形成される、薄膜太陽電池(2)と、
前記第1の層(21)の下方に位置し、前記第1のバンドギャップよりも小さくかつ第2のスペクトル範囲に対応する第2のバンドギャップを有する接合を有する第2の層(31)内に配置されたバルク太陽電池(3)と
を備え、
前記ナノワイアは、入射フォトニック波面の所定の部分が、前記第1のスペクトル範囲および前記第2のスペクトル範囲の両方での吸収のために前記バルク太陽電池へと、前記第1のスペクトル範囲で吸収せずに前記非吸収領域を通過するように選択された横方向密度を前記第1の層において有する、
ハイブリッド光発電デバイス(1)。 - 前記ナノワイアの横方向密度が、前記薄膜太陽電池内で生成される光電流と前記バルク材料太陽電池内で生成される光電流との間の電流マッチングを得るように選択される、請求項1に記載のハイブリッド光発電デバイス。
- 複数の前記ナノワイアが、前記薄膜太陽電池内で上側薄膜電極と下側薄膜電極との間で並列に接続される、請求項1または2に記載のハイブリッド光発電デバイス。
- 前記薄膜太陽電池が、前記下側薄膜電極(24)と前記バルク太陽電池の上側電極(33)との間を金属接続または金属状のガルバニ接続を介して前記バルク太陽電池に直列に接続される、請求項3に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続は、前記薄膜太陽電池と前記バルク太陽電池との間の前記光電流マッチングに寄与するように、前記バルク太陽電池が相互に並列に(73、74)かつ前記薄膜太陽電池に直列に(75)接続されるように第2のバルク太陽電池の上側電極にも接続する、請求項4に記載のハイブリッド光発電デバイス。
- 第1の数の薄膜太陽電池が、薄膜セルの第1のストリング(77)へと直列に相互接続され、第2の数のバルク太陽電池が、バルク太陽電池の第2のストリング(78)へと直列に相互接続され、前記第1および第2のストリングが並列に接続され、前記ストリング内の前記数の電池が、前記ストリング間の電圧マッチングに寄与するように構成される、請求項4に記載のハイブリッド光発電デバイス。
- 前記第1の層と前記第2の層との間に位置し、前記薄膜太陽電池の前記下側電極を前記バルク太陽電池の前記上側電極と接続する導電性層(51)を備える、請求項4に記載のハイブリッド光発電デバイス。
- 第1のコネクタグリッド構造(231)が、前記薄膜太陽電池の前記上側電極に接続され、前記ガルバニ接続が、第2のグリッド構造(331)を含み、前記第1および第2のグリッド構造(231、331)が、縦に実質的に重なる、請求項7に記載のハイブリッド光発電デバイス。
- 前記第2のグリッド構造が、前記バルク太陽電池の前記上側電極(33)を形成し、かつ前記薄膜太陽電池の前記下側電極に接続される、請求項4に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続が、前記薄膜太陽電池と前記バルク太陽電池との間の直接電子伝導径路を与える、請求項4から9のいずれか一項に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続が、非エピタキシャルである、請求項10に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続が、非整流性である、請求項10に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続が、オーミックである、請求項10に記載のハイブリッド光発電デバイス。
- 前記ガルバニ接続が、金属性導電体である、または金属性導電体として本質的に機能する縮退ドープしたマルチ結晶半導体層もしくは導電性酸化物を含む、請求項10に記載のハイブリッド光発電デバイス。
- 前記膜セル内の前記ナノワイアの材料が、GaAs、AlGaAs、InP、またはこれらの合金などの直接バンドギャップ半導体である、請求項1から14のいずれか一項に記載のハイブリッド光発電デバイス。
- 前記バルク太陽電池が、SiまたはCIGSから作られる、請求項1から15のいずれか一項に記載のハイブリッド光発電デバイス。
- 前記第1のバンドギャップが、前記薄膜太陽電池と前記バルク太陽電池との間の光電流マッチングに寄与するように調節される、請求項1から16のいずれか一項に記載のハイブリッド光発電デバイス。
- 前記バルク太陽電池の前記接合が、前記ナノワイアのアレイの下を横方向に延びる、請求項1から17のいずれか一項に記載のハイブリッド光発電デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14190752.7A EP3016148A1 (en) | 2014-10-28 | 2014-10-28 | Dual layer photovoltaic device |
EP14190752.7 | 2014-10-28 | ||
PCT/EP2015/074840 WO2016066630A1 (en) | 2014-10-28 | 2015-10-27 | Dual layer photovoltaic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017534184A true JP2017534184A (ja) | 2017-11-16 |
Family
ID=51830232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017542291A Pending JP2017534184A (ja) | 2014-10-28 | 2015-10-27 | 2層光発電デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170323993A1 (ja) |
EP (2) | EP3016148A1 (ja) |
JP (1) | JP2017534184A (ja) |
KR (1) | KR20170076754A (ja) |
CN (1) | CN107112376A (ja) |
WO (1) | WO2016066630A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019180854A1 (ja) * | 2018-03-20 | 2019-09-26 | 株式会社 東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
JP2022517464A (ja) * | 2019-12-19 | 2022-03-09 | 嘉興智行物聯網技術有限公司 | 二輪車用太陽光薄膜発電装置及びその使用方法 |
WO2022059366A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社東芝 | 太陽電池、および太陽電池システム |
WO2022259461A1 (ja) * | 2021-06-10 | 2022-12-15 | 株式会社東芝 | タンデム太陽電池 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
US10270000B2 (en) * | 2015-10-19 | 2019-04-23 | Solaero Technologies Corp. | Multijunction metamorphic solar cell assembly for space applications |
TWI590475B (zh) * | 2016-06-17 | 2017-07-01 | 財團法人工業技術研究院 | 堆疊型太陽能電池模組 |
TW201840013A (zh) * | 2017-02-02 | 2018-11-01 | 瑞典商索爾伏打電流公司 | 多接面pv應用中具有高透明度之奈米結構子電池 |
EP3550616A1 (en) * | 2018-04-04 | 2019-10-09 | Badini, Angelo | Effective power booster panel for photovoltaic plants |
IT201800009650A1 (it) * | 2018-10-22 | 2020-04-22 | Cf Electronics Srl | Pannello fotovoltaico e relativo metodo di produzione. |
EP4173047A1 (en) | 2020-06-26 | 2023-05-03 | Evolar AB | Photovoltaic top module |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950574A (ja) * | 1982-09-16 | 1984-03-23 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
JPS62105483A (ja) * | 1985-10-31 | 1987-05-15 | Sharp Corp | 太陽電池素子 |
JPS63222472A (ja) * | 1987-03-11 | 1988-09-16 | Mitsubishi Electric Corp | 積層型光起電力素子 |
JPH03206670A (ja) * | 1990-01-08 | 1991-09-10 | Mitsubishi Electric Corp | 太陽電池 |
JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
JP2012524397A (ja) * | 2009-04-15 | 2012-10-11 | ソル ヴォルテイックス エービー | ナノワイヤを有する多接合光電池 |
JP2013051266A (ja) * | 2011-08-30 | 2013-03-14 | Dainippon Printing Co Ltd | 太陽電池および太陽電池モジュール |
WO2013190128A2 (en) * | 2012-06-21 | 2013-12-27 | Norwegian University Of Science And Technology (Ntnu) | Solar cells |
WO2015015694A1 (ja) * | 2013-08-01 | 2015-02-05 | パナソニック株式会社 | 光起電力装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234352A (en) | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
US5853497A (en) * | 1996-12-12 | 1998-12-29 | Hughes Electronics Corporation | High efficiency multi-junction solar cells |
US7977568B2 (en) * | 2007-01-11 | 2011-07-12 | General Electric Company | Multilayered film-nanowire composite, bifacial, and tandem solar cells |
KR20080079058A (ko) * | 2007-02-26 | 2008-08-29 | 엘지전자 주식회사 | 박막형 태양전지 모듈과 그의 제조방법 |
US20110017257A1 (en) * | 2008-08-27 | 2011-01-27 | Stion Corporation | Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices |
US20100147361A1 (en) * | 2008-12-15 | 2010-06-17 | Chen Yung T | Tandem junction photovoltaic device comprising copper indium gallium di-selenide bottom cell |
US10084106B2 (en) * | 2011-05-02 | 2018-09-25 | Mcmaster University | Areal current matching of tandem solar cells |
US20150053261A1 (en) * | 2011-08-29 | 2015-02-26 | Hitachi, Ltd. | Solar cell |
CN103000738A (zh) * | 2011-09-13 | 2013-03-27 | 上海太阳能电池研究与发展中心 | 一种机械叠层碲化镉/多晶硅太阳能电池 |
SE537287C2 (sv) | 2013-06-05 | 2015-03-24 | Sol Voltaics Ab | En solcellsstruktur och en metod för tillverkning av densamma |
CN106165120B (zh) * | 2014-03-31 | 2018-01-30 | 国立研究开发法人科学技术振兴机构 | 太阳能电池及太阳能电池的制造方法 |
-
2014
- 2014-10-28 EP EP14190752.7A patent/EP3016148A1/en not_active Withdrawn
-
2015
- 2015-10-27 CN CN201580071476.7A patent/CN107112376A/zh active Pending
- 2015-10-27 US US15/522,238 patent/US20170323993A1/en not_active Abandoned
- 2015-10-27 EP EP15785121.3A patent/EP3213351A1/en active Pending
- 2015-10-27 JP JP2017542291A patent/JP2017534184A/ja active Pending
- 2015-10-27 KR KR1020177014215A patent/KR20170076754A/ko unknown
- 2015-10-27 WO PCT/EP2015/074840 patent/WO2016066630A1/en active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950574A (ja) * | 1982-09-16 | 1984-03-23 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
JPS62105483A (ja) * | 1985-10-31 | 1987-05-15 | Sharp Corp | 太陽電池素子 |
JPS63222472A (ja) * | 1987-03-11 | 1988-09-16 | Mitsubishi Electric Corp | 積層型光起電力素子 |
JPH03206670A (ja) * | 1990-01-08 | 1991-09-10 | Mitsubishi Electric Corp | 太陽電池 |
JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
JP2012524397A (ja) * | 2009-04-15 | 2012-10-11 | ソル ヴォルテイックス エービー | ナノワイヤを有する多接合光電池 |
WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
JP2013051266A (ja) * | 2011-08-30 | 2013-03-14 | Dainippon Printing Co Ltd | 太陽電池および太陽電池モジュール |
WO2013190128A2 (en) * | 2012-06-21 | 2013-12-27 | Norwegian University Of Science And Technology (Ntnu) | Solar cells |
WO2015015694A1 (ja) * | 2013-08-01 | 2015-02-05 | パナソニック株式会社 | 光起電力装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019180854A1 (ja) * | 2018-03-20 | 2019-09-26 | 株式会社 東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
JPWO2019180854A1 (ja) * | 2018-03-20 | 2020-04-23 | 株式会社東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
US11430903B2 (en) | 2018-03-20 | 2022-08-30 | Kabushiki Kaisha Toshiba | Multi-junction solar cell module and photovoltaic system |
JP2022517464A (ja) * | 2019-12-19 | 2022-03-09 | 嘉興智行物聯網技術有限公司 | 二輪車用太陽光薄膜発電装置及びその使用方法 |
JP7239690B2 (ja) | 2019-12-19 | 2023-03-14 | 嘉興智行物聯網技術有限公司 | 二輪車用太陽光薄膜発電装置及びその使用方法 |
WO2022059366A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社東芝 | 太陽電池、および太陽電池システム |
WO2022059134A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社東芝 | 太陽電池、および太陽電池システム |
WO2022259461A1 (ja) * | 2021-06-10 | 2022-12-15 | 株式会社東芝 | タンデム太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
KR20170076754A (ko) | 2017-07-04 |
US20170323993A1 (en) | 2017-11-09 |
CN107112376A (zh) | 2017-08-29 |
EP3016148A1 (en) | 2016-05-04 |
WO2016066630A1 (en) | 2016-05-06 |
EP3213351A1 (en) | 2017-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017534184A (ja) | 2層光発電デバイス | |
US9947822B2 (en) | Bifacial photovoltaic module using heterojunction solar cells | |
US20110056544A1 (en) | Solar cell | |
US20130206219A1 (en) | Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein | |
KR101923658B1 (ko) | 태양전지 모듈 | |
JP2011035092A (ja) | 裏面接合型太陽電池及びそれを用いた太陽電池モジュール | |
ITVA20090011A1 (it) | Pannello solare con due moduli fotovoltaici multicellulari monolitici di diversa tecnologia | |
US20140373911A1 (en) | Solar cell | |
US20140202515A1 (en) | Booster films for solar photovoltaic systems | |
US20100037940A1 (en) | Stacked solar cell | |
TWI506801B (zh) | 太陽能電池組 | |
KR101411996B1 (ko) | 고효율 태양전지 | |
US20110303270A1 (en) | Solar cell structure having high photoelectric conversion efficiency and method of manufacturing the same | |
KR20120119807A (ko) | 태양 전지 | |
Mykytyuk et al. | Limitations on thickness of absorber layer in CdS/CdTe solar cells | |
JP2018201052A (ja) | 太陽電池モジュール | |
US9537021B2 (en) | Photovoltaic cell | |
US20130312821A1 (en) | Solar cell | |
KR101779955B1 (ko) | 박막 태양 전지 모듈 | |
KR20120122002A (ko) | 이종접합형 태양전지 | |
KR20140080897A (ko) | 태양전지 모듈 및 이의 제조방법 | |
JP5872877B2 (ja) | 薄膜太陽電池モジュール | |
KR20120100110A (ko) | 태양 전지 모듈 | |
KR20120111657A (ko) | 태양 전지 | |
WO2020004475A1 (ja) | 多接合光電変換素子及び多接合太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170620 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170620 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180626 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190305 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191008 |