JP2017533410A5 - - Google Patents

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Publication number
JP2017533410A5
JP2017533410A5 JP2017512369A JP2017512369A JP2017533410A5 JP 2017533410 A5 JP2017533410 A5 JP 2017533410A5 JP 2017512369 A JP2017512369 A JP 2017512369A JP 2017512369 A JP2017512369 A JP 2017512369A JP 2017533410 A5 JP2017533410 A5 JP 2017533410A5
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JP
Japan
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voltage
node
distributed
source
load
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JP2017512369A
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English (en)
Japanese (ja)
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JP2017533410A (ja
JP6702945B2 (ja
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Priority claimed from US14/482,456 external-priority patent/US9494957B2/en
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JP2017512369A 2014-09-10 2015-08-20 電圧平均化を使用する分散型電圧ネットワーク回路ならびに関連するシステムおよび方法 Active JP6702945B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/482,456 US9494957B2 (en) 2014-09-10 2014-09-10 Distributed voltage network circuits employing voltage averaging, and related systems and methods
US14/482,456 2014-09-10
PCT/US2015/046067 WO2016039962A1 (en) 2014-09-10 2015-08-20 Distributed voltage network circuits employing voltage averaging, and related systems and methods

Publications (3)

Publication Number Publication Date
JP2017533410A JP2017533410A (ja) 2017-11-09
JP2017533410A5 true JP2017533410A5 (https=) 2018-09-13
JP6702945B2 JP6702945B2 (ja) 2020-06-03

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ID=54072974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017512369A Active JP6702945B2 (ja) 2014-09-10 2015-08-20 電圧平均化を使用する分散型電圧ネットワーク回路ならびに関連するシステムおよび方法

Country Status (10)

Country Link
US (1) US9494957B2 (https=)
EP (1) EP3191858B1 (https=)
JP (1) JP6702945B2 (https=)
KR (1) KR102331244B1 (https=)
CN (1) CN106662888B (https=)
BR (1) BR112017004693B1 (https=)
CA (1) CA2957035C (https=)
ES (1) ES2861265T3 (https=)
TW (1) TWI594538B (https=)
WO (1) WO2016039962A1 (https=)

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US10345834B2 (en) 2017-08-09 2019-07-09 Qualcomm Incorporated Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US10958167B2 (en) 2018-08-08 2021-03-23 Qualcomm Incorporated Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power
US11099238B2 (en) * 2019-03-27 2021-08-24 General Electric Company Distributed control modules with built-in tests and control-preserving fault responses
WO2022027403A1 (en) * 2020-08-06 2022-02-10 Yangtze Memory Technologies Co., Ltd. Multi-die peak power management for three-dimensional memory
US11625054B2 (en) * 2021-06-17 2023-04-11 Novatek Microelectronics Corp. Voltage to current converter of improved size and accuracy
TW202316122A (zh) * 2021-06-25 2023-04-16 美商Ic分析有限責任公司 用於測試來自單一測試區域之晶圓上之所有測試電路之設備及方法
JP2023043717A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 半導体装置及び半導体集積回路
US12066959B2 (en) * 2022-05-12 2024-08-20 Intel Corporation Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die
US20230398878A1 (en) * 2022-06-14 2023-12-14 Ford Global Technologies, Llc Control of gate drive resistance based on radio frequency interference
US12607658B2 (en) 2023-03-21 2026-04-21 Qualcomm Incorporated Current sensor with a time-interleaved impedance compensation scheme

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JPS5038437A (https=) * 1973-08-08 1975-04-09
US3934209A (en) * 1974-04-23 1976-01-20 Minnesota Mining And Manufacturing Company High voltage DC coupled amplifier
DE3500676A1 (de) * 1985-01-11 1986-07-17 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen
DE4237122C2 (de) 1992-11-03 1996-12-12 Texas Instruments Deutschland Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors
US5600578A (en) * 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
US6191966B1 (en) 1999-12-20 2001-02-20 Texas Instruments Incorporated Phase current sensor using inverter leg shunt resistor
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
DE10258766B4 (de) * 2002-12-16 2005-08-25 Infineon Technologies Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last
US6937178B1 (en) 2003-05-15 2005-08-30 Linear Technology Corporation Gradient insensitive split-core digital to analog converter
US7718448B1 (en) 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
US8582266B2 (en) * 2006-02-17 2013-11-12 Broadcom Corporation Current-monitoring apparatus
JP2009123926A (ja) * 2007-11-15 2009-06-04 Seiko Epson Corp 基準電圧発生回路、ad変換器、da変換器、および画像処理装置
ATE522719T1 (de) * 2008-04-29 2011-09-15 Gm Global Tech Operations Inc Verfahren und vorrichtung zum steuern von glühstiften in einem dieselmotor, insbesondere für motorfahrzeuge
US8390363B2 (en) * 2008-11-25 2013-03-05 Linear Technology Corporation Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips
WO2012147139A1 (ja) * 2011-04-26 2012-11-01 パナソニック株式会社 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体
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CN102955492B (zh) * 2011-08-18 2014-12-10 祥硕科技股份有限公司 参考电流产生电路
US8890601B2 (en) * 2011-11-11 2014-11-18 Qualcomm Incorporated Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection
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