BR112017004693B1 - Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados - Google Patents
Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados Download PDFInfo
- Publication number
- BR112017004693B1 BR112017004693B1 BR112017004693-8A BR112017004693A BR112017004693B1 BR 112017004693 B1 BR112017004693 B1 BR 112017004693B1 BR 112017004693 A BR112017004693 A BR 112017004693A BR 112017004693 B1 BR112017004693 B1 BR 112017004693B1
- Authority
- BR
- Brazil
- Prior art keywords
- voltage
- node
- circuit
- distributed
- load
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/003—Measuring mean values of current or voltage during a given time interval
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Current Or Voltage (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/482,456 US9494957B2 (en) | 2014-09-10 | 2014-09-10 | Distributed voltage network circuits employing voltage averaging, and related systems and methods |
| US14/482,456 | 2014-09-10 | ||
| PCT/US2015/046067 WO2016039962A1 (en) | 2014-09-10 | 2015-08-20 | Distributed voltage network circuits employing voltage averaging, and related systems and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112017004693A2 BR112017004693A2 (pt) | 2017-12-05 |
| BR112017004693B1 true BR112017004693B1 (pt) | 2022-06-21 |
Family
ID=54072974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112017004693-8A BR112017004693B1 (pt) | 2014-09-10 | 2015-08-20 | Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9494957B2 (https=) |
| EP (1) | EP3191858B1 (https=) |
| JP (1) | JP6702945B2 (https=) |
| KR (1) | KR102331244B1 (https=) |
| CN (1) | CN106662888B (https=) |
| BR (1) | BR112017004693B1 (https=) |
| CA (1) | CA2957035C (https=) |
| ES (1) | ES2861265T3 (https=) |
| TW (1) | TWI594538B (https=) |
| WO (1) | WO2016039962A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10345834B2 (en) | 2017-08-09 | 2019-07-09 | Qualcomm Incorporated | Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging |
| US11047946B2 (en) | 2018-05-08 | 2021-06-29 | Qualcomm Incorporated | Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance |
| US10958167B2 (en) | 2018-08-08 | 2021-03-23 | Qualcomm Incorporated | Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power |
| US11099238B2 (en) * | 2019-03-27 | 2021-08-24 | General Electric Company | Distributed control modules with built-in tests and control-preserving fault responses |
| WO2022027403A1 (en) * | 2020-08-06 | 2022-02-10 | Yangtze Memory Technologies Co., Ltd. | Multi-die peak power management for three-dimensional memory |
| US11625054B2 (en) * | 2021-06-17 | 2023-04-11 | Novatek Microelectronics Corp. | Voltage to current converter of improved size and accuracy |
| TW202316122A (zh) * | 2021-06-25 | 2023-04-16 | 美商Ic分析有限責任公司 | 用於測試來自單一測試區域之晶圓上之所有測試電路之設備及方法 |
| JP2023043717A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 半導体装置及び半導体集積回路 |
| US12066959B2 (en) * | 2022-05-12 | 2024-08-20 | Intel Corporation | Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die |
| US20230398878A1 (en) * | 2022-06-14 | 2023-12-14 | Ford Global Technologies, Llc | Control of gate drive resistance based on radio frequency interference |
| US12607658B2 (en) | 2023-03-21 | 2026-04-21 | Qualcomm Incorporated | Current sensor with a time-interleaved impedance compensation scheme |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038437A (https=) * | 1973-08-08 | 1975-04-09 | ||
| US3934209A (en) * | 1974-04-23 | 1976-01-20 | Minnesota Mining And Manufacturing Company | High voltage DC coupled amplifier |
| DE3500676A1 (de) * | 1985-01-11 | 1986-07-17 | Robert Bosch Gmbh, 7000 Stuttgart | Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen |
| DE4237122C2 (de) | 1992-11-03 | 1996-12-12 | Texas Instruments Deutschland | Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors |
| US5600578A (en) * | 1993-08-02 | 1997-02-04 | Advanced Micro Devices, Inc. | Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results |
| US6191966B1 (en) | 1999-12-20 | 2001-02-20 | Texas Instruments Incorporated | Phase current sensor using inverter leg shunt resistor |
| US6461880B1 (en) * | 2001-06-28 | 2002-10-08 | Advanced Micro Devices, Inc. | Method for monitoring silicide failures |
| DE10258766B4 (de) * | 2002-12-16 | 2005-08-25 | Infineon Technologies Ag | Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last |
| US6937178B1 (en) | 2003-05-15 | 2005-08-30 | Linear Technology Corporation | Gradient insensitive split-core digital to analog converter |
| US7718448B1 (en) | 2005-05-27 | 2010-05-18 | National Semiconductor Corporation | Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays |
| US8582266B2 (en) * | 2006-02-17 | 2013-11-12 | Broadcom Corporation | Current-monitoring apparatus |
| JP2009123926A (ja) * | 2007-11-15 | 2009-06-04 | Seiko Epson Corp | 基準電圧発生回路、ad変換器、da変換器、および画像処理装置 |
| ATE522719T1 (de) * | 2008-04-29 | 2011-09-15 | Gm Global Tech Operations Inc | Verfahren und vorrichtung zum steuern von glühstiften in einem dieselmotor, insbesondere für motorfahrzeuge |
| US8390363B2 (en) * | 2008-11-25 | 2013-03-05 | Linear Technology Corporation | Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips |
| WO2012147139A1 (ja) * | 2011-04-26 | 2012-11-01 | パナソニック株式会社 | 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体 |
| DE102011108738B3 (de) | 2011-07-28 | 2012-12-06 | Texas Instruments Deutschland Gmbh | Laststromabtastschaltung und Verfahren |
| CN102955492B (zh) * | 2011-08-18 | 2014-12-10 | 祥硕科技股份有限公司 | 参考电流产生电路 |
| US8890601B2 (en) * | 2011-11-11 | 2014-11-18 | Qualcomm Incorporated | Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection |
| FR2995696B1 (fr) | 2012-09-19 | 2015-05-29 | Commissariat Energie Atomique | Circuit de mesure de tension differentielle |
| WO2014126496A1 (en) * | 2013-02-14 | 2014-08-21 | Freescale Semiconductor, Inc. | Voltage regulator with improved load regulation |
-
2014
- 2014-09-10 US US14/482,456 patent/US9494957B2/en active Active
-
2015
- 2015-08-17 TW TW104126735A patent/TWI594538B/zh active
- 2015-08-20 JP JP2017512369A patent/JP6702945B2/ja active Active
- 2015-08-20 ES ES15762830T patent/ES2861265T3/es active Active
- 2015-08-20 EP EP15762830.6A patent/EP3191858B1/en active Active
- 2015-08-20 BR BR112017004693-8A patent/BR112017004693B1/pt active IP Right Grant
- 2015-08-20 CA CA2957035A patent/CA2957035C/en active Active
- 2015-08-20 CN CN201580047060.1A patent/CN106662888B/zh active Active
- 2015-08-20 KR KR1020177006358A patent/KR102331244B1/ko active Active
- 2015-08-20 WO PCT/US2015/046067 patent/WO2016039962A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20160070277A1 (en) | 2016-03-10 |
| ES2861265T3 (es) | 2021-10-06 |
| TWI594538B (zh) | 2017-08-01 |
| TW201618409A (zh) | 2016-05-16 |
| CA2957035A1 (en) | 2016-03-17 |
| JP2017533410A (ja) | 2017-11-09 |
| EP3191858A1 (en) | 2017-07-19 |
| US9494957B2 (en) | 2016-11-15 |
| KR102331244B1 (ko) | 2021-11-24 |
| KR20170056531A (ko) | 2017-05-23 |
| CA2957035C (en) | 2022-12-13 |
| CN106662888B (zh) | 2019-02-22 |
| CN106662888A (zh) | 2017-05-10 |
| WO2016039962A1 (en) | 2016-03-17 |
| EP3191858B1 (en) | 2021-01-20 |
| JP6702945B2 (ja) | 2020-06-03 |
| BR112017004693A2 (pt) | 2017-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BR112017004693B1 (pt) | Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados | |
| TWI872096B (zh) | 積體電路的片上熱感測網路以及使用其之系統和方法 | |
| TWI619012B (zh) | 溫度管理電路、包含該電路的系統晶片以及管理溫度的方法 | |
| CN1926439B (zh) | 用于减少老化期间的温度差异的系统和方法 | |
| BR112016028619B1 (pt) | Sensor de temperatura de baixa potência e baixo custo | |
| US11054463B2 (en) | Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit | |
| CN108027414A (zh) | 片上参数测量 | |
| CN107024294A (zh) | 一种多通道芯片温度测量电路及方法 | |
| US20150103866A1 (en) | DIGITAL TEMPERATURE ESTIMATORS (DTEs) DISPOSED IN INTEGRATED CIRCUITS (ICs) FOR ESTIMATING TEMPERATURE WITHIN THE ICs, AND RELATED SYSTEMS AND METHODS | |
| CN102853931A (zh) | 热传感器及其操作方法 | |
| TWI798598B (zh) | 電壓調節器和調節電壓的方法 | |
| CN105021969B (zh) | 一种半导体三极管放大倍数脉冲测试方法 | |
| US11639911B2 (en) | Determining a temperature coefficient value of a resistor | |
| US20230366746A1 (en) | Multi-Sensing PTAT for Multiple-Location Temperature Sensing | |
| CN107771289A (zh) | 用于集成电路监视和防止电迁移失效的方法和装置 | |
| US7805274B2 (en) | Structure and methodology for characterizing device self-heating | |
| TW202329132A (zh) | 用於記憶體感測的電流產生器 | |
| WO2022180349A1 (en) | Determining a temperature coefficient value of an inegrated resistor of an integrated circuit | |
| TWM640642U (zh) | 電晶體參數量測裝置 | |
| US20210215785A1 (en) | Current measurement in power-gated microprocessors | |
| JP2021532600A (ja) | 複数の感知トランジスタに結合されたパワートランジスタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 20/08/2015, OBSERVADAS AS CONDICOES LEGAIS |