TWI594538B - 使用電壓平均之分佈電壓網路電路及相關系統及方法 - Google Patents

使用電壓平均之分佈電壓網路電路及相關系統及方法 Download PDF

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Publication number
TWI594538B
TWI594538B TW104126735A TW104126735A TWI594538B TW I594538 B TWI594538 B TW I594538B TW 104126735 A TW104126735 A TW 104126735A TW 104126735 A TW104126735 A TW 104126735A TW I594538 B TWI594538 B TW I594538B
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TW
Taiwan
Prior art keywords
voltage
distributed
circuit
node
nodes
Prior art date
Application number
TW104126735A
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English (en)
Chinese (zh)
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TW201618409A (zh
Inventor
柏特 李 普萊斯
葉區萬特 納葛雷 科拉
德哈佛爾 瑞傑許巴哈 夏
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高通公司
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Publication of TW201618409A publication Critical patent/TW201618409A/zh
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Publication of TWI594538B publication Critical patent/TWI594538B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/003—Measuring mean values of current or voltage during a given time interval
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Control Of Electrical Variables (AREA)
TW104126735A 2014-09-10 2015-08-17 使用電壓平均之分佈電壓網路電路及相關系統及方法 TWI594538B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/482,456 US9494957B2 (en) 2014-09-10 2014-09-10 Distributed voltage network circuits employing voltage averaging, and related systems and methods

Publications (2)

Publication Number Publication Date
TW201618409A TW201618409A (zh) 2016-05-16
TWI594538B true TWI594538B (zh) 2017-08-01

Family

ID=54072974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126735A TWI594538B (zh) 2014-09-10 2015-08-17 使用電壓平均之分佈電壓網路電路及相關系統及方法

Country Status (10)

Country Link
US (1) US9494957B2 (https=)
EP (1) EP3191858B1 (https=)
JP (1) JP6702945B2 (https=)
KR (1) KR102331244B1 (https=)
CN (1) CN106662888B (https=)
BR (1) BR112017004693B1 (https=)
CA (1) CA2957035C (https=)
ES (1) ES2861265T3 (https=)
TW (1) TWI594538B (https=)
WO (1) WO2016039962A1 (https=)

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US10345834B2 (en) 2017-08-09 2019-07-09 Qualcomm Incorporated Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US10958167B2 (en) 2018-08-08 2021-03-23 Qualcomm Incorporated Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power
US11099238B2 (en) * 2019-03-27 2021-08-24 General Electric Company Distributed control modules with built-in tests and control-preserving fault responses
WO2022027403A1 (en) * 2020-08-06 2022-02-10 Yangtze Memory Technologies Co., Ltd. Multi-die peak power management for three-dimensional memory
US11625054B2 (en) * 2021-06-17 2023-04-11 Novatek Microelectronics Corp. Voltage to current converter of improved size and accuracy
TW202316122A (zh) * 2021-06-25 2023-04-16 美商Ｉｃ分析有限責任公司 用於測試來自單一測試區域之晶圓上之所有測試電路之設備及方法
JP2023043717A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 半導体装置及び半導体集積回路
US12066959B2 (en) * 2022-05-12 2024-08-20 Intel Corporation Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die
US20230398878A1 (en) * 2022-06-14 2023-12-14 Ford Global Technologies, Llc Control of gate drive resistance based on radio frequency interference
US12607658B2 (en) 2023-03-21 2026-04-21 Qualcomm Incorporated Current sensor with a time-interleaved impedance compensation scheme

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TW238415B (en) * 1993-08-02 1995-01-11 Advanced Micro Devices Inc Test method for predicting hot-carrier induced leakage over time in short-channel igfets and products designed in accordance with test results
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
US20090128120A1 (en) * 2007-11-15 2009-05-21 Seiko Epson Corporation Reference voltage generation circuit, ad converter, da converter, and image processor
US7718448B1 (en) * 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
US20110068854A1 (en) * 2008-11-25 2011-03-24 Bernhard Helmut Engl Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips

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JPS5038437A (https=) * 1973-08-08 1975-04-09
DE3500676A1 (de) * 1985-01-11 1986-07-17 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen
DE4237122C2 (de) 1992-11-03 1996-12-12 Texas Instruments Deutschland Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors
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US8890601B2 (en) * 2011-11-11 2014-11-18 Qualcomm Incorporated Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection
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US3934209A (en) * 1974-04-23 1976-01-20 Minnesota Mining And Manufacturing Company High voltage DC coupled amplifier
TW238415B (en) * 1993-08-02 1995-01-11 Advanced Micro Devices Inc Test method for predicting hot-carrier induced leakage over time in short-channel igfets and products designed in accordance with test results
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
US7718448B1 (en) * 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
US20090128120A1 (en) * 2007-11-15 2009-05-21 Seiko Epson Corporation Reference voltage generation circuit, ad converter, da converter, and image processor
US20110068854A1 (en) * 2008-11-25 2011-03-24 Bernhard Helmut Engl Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips

Also Published As

Publication number Publication date
US20160070277A1 (en) 2016-03-10
ES2861265T3 (es) 2021-10-06
BR112017004693B1 (pt) 2022-06-21
TW201618409A (zh) 2016-05-16
CA2957035A1 (en) 2016-03-17
JP2017533410A (ja) 2017-11-09
EP3191858A1 (en) 2017-07-19
US9494957B2 (en) 2016-11-15
KR102331244B1 (ko) 2021-11-24
KR20170056531A (ko) 2017-05-23
CA2957035C (en) 2022-12-13
CN106662888B (zh) 2019-02-22
CN106662888A (zh) 2017-05-10
WO2016039962A1 (en) 2016-03-17
EP3191858B1 (en) 2021-01-20
JP6702945B2 (ja) 2020-06-03
BR112017004693A2 (pt) 2017-12-05

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