JP2017529683A - 微細加工超音波変換器ならびに関連する装置および方法 - Google Patents
微細加工超音波変換器ならびに関連する装置および方法 Download PDFInfo
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
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- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Heart & Thoracic Surgery (AREA)
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Abstract
Description
[0001] 本出願は、その全体が参照によって本明細書に組み込まれる、2014年7月14日に出願された「Microfabricated Ultrasonic Transducers and Related Apparatus and Methods」と題する米国仮特許出願第62/024,179号、代理人整理番号第B1348.70013US00号の、米国特許法第119条e項の下での利益を主張する。
[0005] 本明細書に記載される技術は、相補形金属酸化膜半導体(CMOS)変換器およびこれを形成するための方法に関する。
[0006] 容量型微細機械加工超音波変換器(CMUT)は、微細機械加工された空洞上方に膜を含む、知られているデバイスである。この膜を使用して、音響信号を電気信号に、またはこの逆に変換することができる。したがって、CMUTは超音波変換器として動作し得る。
Claims (24)
- 開いた空洞が形成された第1のウエハを第2のウエハと接合することによって複数の封止された空洞を有する工学設計された基板を形成し、次いで前記第1のウエハを約30ミクロン未満の厚さまで薄くすることと、
前記工学設計された基板を450℃を超えない温度で第3のウエハと接合することと、
前記工学設計された基板を前記第3のウエハと接合することに続いて、前記第2のウエハを約30ミクロン未満の厚さまで薄くすることと、
を含む、方法。 - 前記第1のウエハがシリコンオンインシュレータ(SOI)ウエハであり、前記第1のウエハを薄くすることが、前記第1のウエハのハンドル層を除去することを含む、請求項1に記載の方法。
- 前記第2のウエハがSOIウエハであり、前記第2のウエハを薄くすることが、前記第2のウエハのハンドル層を除去することを含む、請求項2に記載の方法。
- 前記第1のウエハがドープ層を備えるバルクシリコンウエハであり、前記ドープ層が約10ミクロン未満の厚さを有しかつ前記第1のウエハの第1の面に近接しており、前記第1のウエハを薄くすることが、前記第1のウエハを後面から前記ドープ層まで薄くすることを含み、前記後面が前記第1の面の反対側である、請求項1に記載の方法。
- 前記第2のウエハが、約10ミクロン未満の厚さを有するドープ層を備えるバルクシリコンウエハであり、前記第2のウエハを薄くすることが、前記第2のウエハを後面から前記第2のウエハの前記ドープ層まで薄くすることを含む、請求項4に記載の方法。
- 前記第1のウエハを約30ミクロン未満の厚さまで薄くすることが、前記第1のウエハを約5ミクロン未満の厚さまで薄くすることを含み、前記第2のウエハを約30ミクロン未満の厚さまで薄くすることが、前記第2のウエハを約5ミクロン未満の厚さまで薄くすることを含む、請求項1から5のいずれか1項に記載の方法。
- 前記第2のウエハが、前記複数の封止された空洞のうちの少なくとも1つの空洞を覆って膜を形成し、前記第3のウエハが相補形金属酸化膜半導体(CMOS)ウエハであり、前記方法が、前記CMOSウエハ上の集積回路を前記膜に接続することをさらに含む、請求項1に記載の方法。
- 前記第1のウエハの一部分が電気伝導性であり、前記工学設計された基板を前記第3のウエハと接合することが、前記第1のウエハの前記一部分と前記第3のウエハ上の電気コンタクトとの間に電気接続部を形成することを含む、請求項1から7のいずれか1項に記載の方法。
- 前記第1のウエハの前記一部分が電極を画定するパターンでドープされる、請求項8に記載の方法。
- 前記一部分が単結晶シリコンを含む、請求項9に記載の方法。
- 前記一部分がポリシリコンを含む、請求項9に記載の方法。
- 前記一部分が非晶質シリコンを含む、請求項9に記載の方法。
- 前記ドーピングが第1の領域およびコンタクト領域を画定し、前記第1の領域および前記コンタクト領域が同じドーピングの種類を有し、前記コンタクト領域が前記第1の領域よりも高いドーピング濃度を有する、請求項9に記載の方法。
- 前記第1のウエハの前記一部分が、前記第1のウエハの前記一部分に近接して位置付けられた少なくとも1つの空洞の幅よりも小さい幅を有する、請求項8から13のいずれか1項に記載の方法。
- 前記工学設計された基板を前記第3のウエハと接合することが、共晶接合部または熱圧縮接合部またはシリサイド接合部を形成することを含む、請求項1から14のいずれか1項に記載の方法。
- 前記工学設計された基板を前記第3のウエハと接合することが、前記複数の封止された空洞を密封封止する封止リングを形成することを含む、請求項1から15のいずれか1項に記載の方法。
- 複数の封止された空洞を有する工学設計された基板を形成することが、幅および深さ、ならびに50から300までの間の幅の深さに対する比を有する少なくとも1つの封止された空洞を形成することを含む、請求項1から16のいずれか1項に記載の方法。
- 前記深さが約0.1ミクロンから約5ミクロンまでの間である、請求項17に記載の方法。
- 前記工学設計された基板を形成することの一部としてかつ前記工学設計された基板を前記第3のウエハに接合するのに先立ってアニールを行うことによって、前記第1のウエハおよび/または前記第2のウエハにおけるドーピングを活性化することをさらに備える、請求項1から18のいずれか1項に記載の方法。
- 前記工学設計された基板に前記複数の封止された空洞のうちの少なくとも1つの空洞まで開口部を形成して前記少なくとも1つの空洞の封止を解除することをさらに含む、請求項1から19のいずれか1項に記載の方法。
- 前記第1のウエハの酸化シリコンの層に前記開いた空洞を形成することをさらに含む、請求項1から20のいずれか1項に記載の方法。
- 前記第1のウエハを薄くした後で前記第1のウエハに複数のトレンチをエッチングすることであって、前記複数のトレンチが前記第1のウエハの複数の電極領域を画定する、エッチングすることをさらに含む、請求項1から21のいずれか1項に記載の方法。
- 絶縁材料で前記複数のトレンチを充填することをさらに含む、請求項22に記載の方法。
- 前記工学設計された基板を前記第3のウエハと接合することが、前記工学設計された基板を前記第3のウエハと一体に統合することを含む、請求項1から23のいずれか1項に記載の方法。
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