JP2017528007A - 反射層を伴うマウント上の発光デバイス - Google Patents

反射層を伴うマウント上の発光デバイス Download PDF

Info

Publication number
JP2017528007A
JP2017528007A JP2017533739A JP2017533739A JP2017528007A JP 2017528007 A JP2017528007 A JP 2017528007A JP 2017533739 A JP2017533739 A JP 2017533739A JP 2017533739 A JP2017533739 A JP 2017533739A JP 2017528007 A JP2017528007 A JP 2017528007A
Authority
JP
Japan
Prior art keywords
layer
led
refractive index
mount
top surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017533739A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017528007A5 (enExample
Inventor
ティー ローレンス，ナサニエル
ティー ローレンス，ナサニエル
シューキン，オレク
ヴァンポーラ，ケネス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2017528007A publication Critical patent/JP2017528007A/ja
Publication of JP2017528007A5 publication Critical patent/JP2017528007A5/ja
Priority to JP2022001541A priority Critical patent/JP7361810B2/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2017533739A 2014-09-15 2015-09-15 反射層を伴うマウント上の発光デバイス Pending JP2017528007A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022001541A JP7361810B2 (ja) 2014-09-15 2022-01-07 反射層を伴うマウント上の発光デバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462050481P 2014-09-15 2014-09-15
US62/050,481 2014-09-15
PCT/US2015/050206 WO2016044284A1 (en) 2014-09-15 2015-09-15 Light emitting device on a mount with a reflective layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022001541A Division JP7361810B2 (ja) 2014-09-15 2022-01-07 反射層を伴うマウント上の発光デバイス

Publications (2)

Publication Number Publication Date
JP2017528007A true JP2017528007A (ja) 2017-09-21
JP2017528007A5 JP2017528007A5 (enExample) 2018-10-25

Family

ID=54197128

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017533739A Pending JP2017528007A (ja) 2014-09-15 2015-09-15 反射層を伴うマウント上の発光デバイス
JP2022001541A Active JP7361810B2 (ja) 2014-09-15 2022-01-07 反射層を伴うマウント上の発光デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022001541A Active JP7361810B2 (ja) 2014-09-15 2022-01-07 反射層を伴うマウント上の発光デバイス

Country Status (6)

Country Link
US (2) US9508907B2 (enExample)
EP (1) EP3195374B1 (enExample)
JP (2) JP2017528007A (enExample)
KR (2) KR20170060053A (enExample)
CN (1) CN107078195B (enExample)
WO (1) WO2016044284A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2484713A (en) 2010-10-21 2012-04-25 Optovate Ltd Illumination apparatus
US10403792B2 (en) 2016-03-07 2019-09-03 Rayvio Corporation Package for ultraviolet emitting devices
US20180006203A1 (en) * 2016-07-01 2018-01-04 Rayvio Corporation Ultraviolet emitting device
KR20180033352A (ko) * 2016-09-23 2018-04-03 삼성디스플레이 주식회사 캡핑층을 포함하는 유기발광 표시장치
GB201718307D0 (en) 2017-11-05 2017-12-20 Optovate Ltd Display apparatus
GB201800574D0 (en) 2018-01-14 2018-02-28 Optovate Ltd Illumination apparatus
GB201807747D0 (en) 2018-05-13 2018-06-27 Optovate Ltd Colour micro-LED display apparatus
WO2021067612A1 (en) 2019-10-03 2021-04-08 Reald Spark, Llc Illumination apparatus comprising passive optical nanostructures
EP4359862A4 (en) 2021-06-22 2025-04-30 RealD Spark, LLC Illumination apparatus
JP2025508511A (ja) * 2022-03-03 2025-03-26 ジェイド バード ディスプレイ（シャンハイ） リミテッド マイクロｌｅｄ、マイクロｌｅｄパネルおよびマイクロｌｅｄチップ

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176200A (ja) * 2000-09-12 2002-06-21 Lumileds Lighting Us Llc 改良された光抽出効率を有する発光ダイオード
WO2008155960A1 (ja) * 2007-06-15 2008-12-24 Rohm Co., Ltd. 半導体発光素子
JP2009182085A (ja) * 2008-01-30 2009-08-13 Kyocera Corp 発光装置
JP2009246194A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
JP2010028049A (ja) * 2008-07-24 2010-02-04 Kyocera Corp 発光装置及び照明装置
JP2011108748A (ja) * 2009-11-13 2011-06-02 Citizen Electronics Co Ltd Ｌｅｄ発光装置及びｌｅｄ発光装置の製造方法。
JP2011138815A (ja) * 2009-12-25 2011-07-14 Nichia Corp 発光装置
JP2011151339A (ja) * 2009-12-22 2011-08-04 Toyoda Gosei Co Ltd 発光装置
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ｌｅｄランプ及びその製造方法
JP2014033168A (ja) * 2012-07-13 2014-02-20 Nichia Chem Ind Ltd 発光装置
WO2015068072A1 (en) * 2013-11-07 2015-05-14 Koninklijke Philips N.V. Substrate for led with total-internal reflection layer surrounding led

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2356713A (en) 1999-11-26 2001-05-30 Seiko Epson Corp Distributed Bragg reflector
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
JP4847954B2 (ja) * 2005-03-29 2011-12-28 京セラ株式会社 反射部材、これを用いた発光装置および照明装置
JP2007311707A (ja) * 2006-05-22 2007-11-29 Ushio Inc 紫外線発光素子パッケージ
JP5407116B2 (ja) 2007-06-22 2014-02-05 豊田合成株式会社 発光装置
JP5057398B2 (ja) 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP2012028501A (ja) 2010-07-22 2012-02-09 Toshiba Corp 発光装置
CN102376843A (zh) * 2010-08-12 2012-03-14 陈文彬 Led封装透镜
JP5893633B2 (ja) 2010-10-12 2016-03-23 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｌｅｄサブマウント上の高反射性コーティング
JP5582048B2 (ja) 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
US8969894B2 (en) * 2011-04-15 2015-03-03 Tsmc Solid State Lighting Ltd. Light emitting diode with a micro-structure lens having a ridged surface
TW201304199A (zh) * 2011-07-12 2013-01-16 Lextar Electronics Corp 發光二極體晶片封裝體
TWI458133B (zh) * 2011-09-06 2014-10-21 新世紀光電股份有限公司 基板
CN103035812B (zh) * 2011-09-29 2015-11-18 新世纪光电股份有限公司 基板
US8907319B2 (en) * 2011-12-12 2014-12-09 Lg Innotek Co., Ltd. Light emitting device package
CN103000785A (zh) * 2012-11-05 2013-03-27 何忠亮 一种led发光结构及其制作方法
US9536924B2 (en) * 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
KR101428774B1 (ko) 2013-04-30 2014-08-12 주식회사 세미콘라이트 반도체 발광소자 및 이를 제조하는 방법
CN105393373B (zh) * 2013-05-15 2020-10-16 亮锐控股有限公司 具有光学元件和反射体的发光器件
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176200A (ja) * 2000-09-12 2002-06-21 Lumileds Lighting Us Llc 改良された光抽出効率を有する発光ダイオード
WO2008155960A1 (ja) * 2007-06-15 2008-12-24 Rohm Co., Ltd. 半導体発光素子
JP2009182085A (ja) * 2008-01-30 2009-08-13 Kyocera Corp 発光装置
JP2009246194A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
JP2010028049A (ja) * 2008-07-24 2010-02-04 Kyocera Corp 発光装置及び照明装置
JP2011108748A (ja) * 2009-11-13 2011-06-02 Citizen Electronics Co Ltd Ｌｅｄ発光装置及びｌｅｄ発光装置の製造方法。
JP2011151339A (ja) * 2009-12-22 2011-08-04 Toyoda Gosei Co Ltd 発光装置
JP2011138815A (ja) * 2009-12-25 2011-07-14 Nichia Corp 発光装置
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ｌｅｄランプ及びその製造方法
JP2014033168A (ja) * 2012-07-13 2014-02-20 Nichia Chem Ind Ltd 発光装置
WO2015068072A1 (en) * 2013-11-07 2015-05-14 Koninklijke Philips N.V. Substrate for led with total-internal reflection layer surrounding led

Also Published As

Publication number Publication date
KR20230049771A (ko) 2023-04-13
WO2016044284A1 (en) 2016-03-24
US20160079498A1 (en) 2016-03-17
KR102662481B1 (ko) 2024-05-03
US9508907B2 (en) 2016-11-29
EP3195374A1 (en) 2017-07-26
EP3195374B1 (en) 2019-03-13
CN107078195B (zh) 2020-03-03
KR20170060053A (ko) 2017-05-31
CN107078195A (zh) 2017-08-18
US9941454B2 (en) 2018-04-10
JP7361810B2 (ja) 2023-10-16
US20170047493A1 (en) 2017-02-16
JP2022033347A (ja) 2022-02-28

Similar Documents

Publication Publication Date Title
JP7361810B2 (ja) 反射層を伴うマウント上の発光デバイス
JP6933691B2 (ja) トップエミッション型半導体発光デバイス
JP5797640B2 (ja) 反射構造を有する半導体発光ダイオードおよびその製造方法
US8680556B2 (en) Composite high reflectivity layer
JP7089499B2 (ja) 波長変換式半導体発光デバイス
JP6749240B2 (ja) 反射側壁を有する発光デバイス
US9941444B2 (en) Light emitting diode with structured substrate
JP6832282B2 (ja) 複数の積み重ねられた発光デバイスを有するデバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170316

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180912

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180912

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20190307

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190806

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20191101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200707

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20201005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210406

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210705

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20210907