KR102662481B1 - 반사층을 갖는 장착부 상의 발광 디바이스 - Google Patents

반사층을 갖는 장착부 상의 발광 디바이스 Download PDF

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Publication number
KR102662481B1
KR102662481B1 KR1020237011480A KR20237011480A KR102662481B1 KR 102662481 B1 KR102662481 B1 KR 102662481B1 KR 1020237011480 A KR1020237011480 A KR 1020237011480A KR 20237011480 A KR20237011480 A KR 20237011480A KR 102662481 B1 KR102662481 B1 KR 102662481B1
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South Korea
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layer
lens
region
disposed
led
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Korean (ko)
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KR20230049771A (ko
Inventor
나타니엘 티. 로렌스
올레그 슈케킨
케니스 밤폴라
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루미리즈 홀딩 비.브이.
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Classifications

    • H01L33/60
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • H01L33/486
    • H01L33/502
    • H01L33/54
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020237011480A 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스 Active KR102662481B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462050481P 2014-09-15 2014-09-15
US62/050,481 2014-09-15
PCT/US2015/050206 WO2016044284A1 (en) 2014-09-15 2015-09-15 Light emitting device on a mount with a reflective layer
KR1020177010034A KR20170060053A (ko) 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177010034A Division KR20170060053A (ko) 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스

Publications (2)

Publication Number Publication Date
KR20230049771A KR20230049771A (ko) 2023-04-13
KR102662481B1 true KR102662481B1 (ko) 2024-05-03

Family

ID=54197128

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020237011480A Active KR102662481B1 (ko) 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스
KR1020177010034A Ceased KR20170060053A (ko) 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177010034A Ceased KR20170060053A (ko) 2014-09-15 2015-09-15 반사층을 갖는 장착부 상의 발광 디바이스

Country Status (6)

Country Link
US (2) US9508907B2 (enExample)
EP (1) EP3195374B1 (enExample)
JP (2) JP2017528007A (enExample)
KR (2) KR102662481B1 (enExample)
CN (1) CN107078195B (enExample)
WO (1) WO2016044284A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2484713A (en) 2010-10-21 2012-04-25 Optovate Ltd Illumination apparatus
US10403792B2 (en) 2016-03-07 2019-09-03 Rayvio Corporation Package for ultraviolet emitting devices
US20180006203A1 (en) * 2016-07-01 2018-01-04 Rayvio Corporation Ultraviolet emitting device
KR20180033352A (ko) * 2016-09-23 2018-04-03 삼성디스플레이 주식회사 캡핑층을 포함하는 유기발광 표시장치
GB201718307D0 (en) 2017-11-05 2017-12-20 Optovate Ltd Display apparatus
GB201800574D0 (en) 2018-01-14 2018-02-28 Optovate Ltd Illumination apparatus
GB201807747D0 (en) 2018-05-13 2018-06-27 Optovate Ltd Colour micro-LED display apparatus
WO2021067612A1 (en) 2019-10-03 2021-04-08 Reald Spark, Llc Illumination apparatus comprising passive optical nanostructures
WO2022271582A1 (en) 2021-06-22 2022-12-29 Reald Spark, Llc Illumination apparatus
JP2025508511A (ja) * 2022-03-03 2025-03-26 ジェイド バード ディスプレイ(シャンハイ) リミテッド マイクロled、マイクロledパネルおよびマイクロledチップ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130056776A1 (en) * 2011-09-06 2013-03-07 Genesis Photonics Inc. Plate
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ledランプ及びその製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2356713A (en) * 1999-11-26 2001-05-30 Seiko Epson Corp Distributed Bragg reflector
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
WO2006104061A1 (ja) * 2005-03-29 2006-10-05 Kyocera Corporation 反射部材、これを用いた発光装置および照明装置
JP2007311707A (ja) * 2006-05-22 2007-11-29 Ushio Inc 紫外線発光素子パッケージ
EP2159852A4 (en) * 2007-06-15 2012-09-26 Rohm Co Ltd SEMICONDUCTOR LIGHT EMITTING DEVICE
JP5407116B2 (ja) * 2007-06-22 2014-02-05 豊田合成株式会社 発光装置
JP5014182B2 (ja) * 2008-01-30 2012-08-29 京セラ株式会社 発光装置
JP5006242B2 (ja) * 2008-03-31 2012-08-22 古河電気工業株式会社 面発光半導体レーザ素子
JP2010028049A (ja) * 2008-07-24 2010-02-04 Kyocera Corp 発光装置及び照明装置
JP5057398B2 (ja) * 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP5550886B2 (ja) * 2009-11-13 2014-07-16 シチズン電子株式会社 Led発光装置
JP5505005B2 (ja) * 2009-12-22 2014-05-28 豊田合成株式会社 発光装置
JP5701502B2 (ja) * 2009-12-25 2015-04-15 日亜化学工業株式会社 発光装置
JP2012028501A (ja) * 2010-07-22 2012-02-09 Toshiba Corp 発光装置
CN102376843A (zh) * 2010-08-12 2012-03-14 陈文彬 Led封装透镜
JP5893633B2 (ja) * 2010-10-12 2016-03-23 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Ledサブマウント上の高反射性コーティング
JP5582048B2 (ja) 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
US8969894B2 (en) * 2011-04-15 2015-03-03 Tsmc Solid State Lighting Ltd. Light emitting diode with a micro-structure lens having a ridged surface
TW201304199A (zh) * 2011-07-12 2013-01-16 Lextar Electronics Corp 發光二極體晶片封裝體
CN105140375A (zh) * 2011-09-29 2015-12-09 新世纪光电股份有限公司 基板以及发光二极管装置
US8907319B2 (en) * 2011-12-12 2014-12-09 Lg Innotek Co., Ltd. Light emitting device package
JP6048001B2 (ja) * 2012-07-13 2016-12-21 日亜化学工業株式会社 発光装置
CN103000785A (zh) * 2012-11-05 2013-03-27 何忠亮 一种led发光结构及其制作方法
US9536924B2 (en) * 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
KR101428774B1 (ko) 2013-04-30 2014-08-12 주식회사 세미콘라이트 반도체 발광소자 및 이를 제조하는 방법
KR102237304B1 (ko) * 2013-05-15 2021-04-07 루미리즈 홀딩 비.브이. 반사기 및 광학 요소를 갖는 발광 디바이스
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置
WO2015068072A1 (en) * 2013-11-07 2015-05-14 Koninklijke Philips N.V. Substrate for led with total-internal reflection layer surrounding led

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130056776A1 (en) * 2011-09-06 2013-03-07 Genesis Photonics Inc. Plate
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ledランプ及びその製造方法

Also Published As

Publication number Publication date
JP7361810B2 (ja) 2023-10-16
US20170047493A1 (en) 2017-02-16
JP2017528007A (ja) 2017-09-21
KR20170060053A (ko) 2017-05-31
US20160079498A1 (en) 2016-03-17
EP3195374A1 (en) 2017-07-26
CN107078195A (zh) 2017-08-18
JP2022033347A (ja) 2022-02-28
EP3195374B1 (en) 2019-03-13
CN107078195B (zh) 2020-03-03
KR20230049771A (ko) 2023-04-13
US9508907B2 (en) 2016-11-29
WO2016044284A1 (en) 2016-03-24
US9941454B2 (en) 2018-04-10

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