JP2017527116A - 均一なプラズマ処理のためのノズル - Google Patents
均一なプラズマ処理のためのノズル Download PDFInfo
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- JP2017527116A JP2017527116A JP2017507997A JP2017507997A JP2017527116A JP 2017527116 A JP2017527116 A JP 2017527116A JP 2017507997 A JP2017507997 A JP 2017507997A JP 2017507997 A JP2017507997 A JP 2017507997A JP 2017527116 A JP2017527116 A JP 2017527116A
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- 239000000758 substrate Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 204
- 239000010410 layer Substances 0.000 description 59
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- 239000002245 particle Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
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- 239000004065 semiconductor Substances 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
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- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000009827 uniform distribution Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- 238000009623 Bosch process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 238000001451 molecular beam epitaxy Methods 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241000724291 Tobacco streak virus Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
一実施形態では、出口孔の直径は約0.03インチから約0.07インチである。より具体的な実施形態では、出口孔の直径は約0.05インチである。
一実施形態では、出口孔の直径は、約0.03インチから約0.07インチである。より具体的な実施形態では、出口孔の直径は約0.05インチである。
一実施形態では、図5に示す2点ノズルは、焼結、研削及び切削プロセス、又はノズル製造業者に既知の他の技法を介して製造される。一実施形態では、図5に関連して記載されるガスチャネル及びノズルの出口は、焼結、研削及び切削プロセス、又はノズル製造業者に既知の他の技法を介して形成される。
Claims (15)
- 均一なプラズマ処理のためのノズルであって、
複数のガスチャネルを含み、垂直軸にほぼ平行する側面を有する入口部と、
前記入口部に連結され、複数の出口を含む出口部であって、前記出口のうちの少なくとも1つは、前記垂直軸に対して直角以外の角度をなす出口部と
を備えるノズル。 - 前記ガスチャネルのうちの少なくとも1つが、前記垂直軸に対してある角度をなして延びている、請求項1に記載のノズル。
- 前記入口部と前記出口部との間に空洞
を更に備える、請求項1に記載のノズル。 - 前記出口部は、凸形状、凹形状及び段のうちの1つを有する、請求項1に記載のノズル。
- 前記出口の数が、前記ガスチャネルの数を上回る、請求項1に記載のノズル。
- プラズマ処理システムであって、
基板を備えるワークピースを保持するペデスタルを備える処理チャンバと、
プラズマ源と、
ガスを受け入れて、前記処理チャンバ内でプラズマを生成するために前記プラズマ源に連結されたノズルであって、複数のガスチャネルを含み且つ垂直軸にほぼ平行する側面を含む入口部と、前記入口部に連結され且つ複数の出口を含む出口部であって、前記出口のうちの少なくとも1つが前記垂直軸に対して直角以外の角度をなしている出口部とを備えるノズルと
を備えるシステム。 - 前記ガスチャネルのうちの少なくとも1つが、前記垂直軸に対してある角度をなして延びている、請求項6に記載のシステム。
- 前記ノズルが更に、
前記入口部と前記出口部との間に空洞
を備える、請求項6に記載のシステム。 - 前記出口部が、凸形状、凹形状及び段のうちの1つを有する、請求項6に記載のシステム。
- 前記出口の数が、前記ガスチャネルの数を上回る、請求項6に記載のシステム。
- 均一なプラズマ処理のためのノズルを製造する方法であって、
複数のガスチャネルを含み、垂直軸にほぼ平行する側面を有する入口部を形成することと、
前記入口部に連結され、複数の出口を含む出口部であって、前記出口のうちの少なくとも1つが、前記垂直軸に対して直角以外の角度をなしている出口部を形成することと
を含む方法。 - 前記ガスチャネルのうちの少なくとも1つが、前記垂直軸に対してある角度をなしている、請求項11に記載の方法。
- 前記入口部と前記出口部との間に空洞を形成すること
を更に含む、請求項11に記載の方法。 - 前記出口部が、凸形状、凹形状、及び段のうちの1つを有する、
請求項11に記載の方法。 - 前記出口の数が前記ガスチャネルの数を上回る、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/461,318 US10465288B2 (en) | 2014-08-15 | 2014-08-15 | Nozzle for uniform plasma processing |
US14/461,318 | 2014-08-15 | ||
PCT/US2015/043019 WO2016025187A1 (en) | 2014-08-15 | 2015-07-30 | Nozzle for uniform plasma processing |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019184508A Division JP2020043079A (ja) | 2014-08-15 | 2019-10-07 | 均一なプラズマ処理のためのノズル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017527116A true JP2017527116A (ja) | 2017-09-14 |
JP6602370B2 JP6602370B2 (ja) | 2019-11-06 |
Family
ID=55301722
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017507997A Expired - Fee Related JP6602370B2 (ja) | 2014-08-15 | 2015-07-30 | 均一なプラズマ処理のためのノズル |
JP2019184508A Pending JP2020043079A (ja) | 2014-08-15 | 2019-10-07 | 均一なプラズマ処理のためのノズル |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019184508A Pending JP2020043079A (ja) | 2014-08-15 | 2019-10-07 | 均一なプラズマ処理のためのノズル |
Country Status (6)
Country | Link |
---|---|
US (2) | US10465288B2 (ja) |
JP (2) | JP6602370B2 (ja) |
KR (1) | KR20170042727A (ja) |
CN (2) | CN106575597B (ja) |
TW (2) | TWI687134B (ja) |
WO (1) | WO2016025187A1 (ja) |
Families Citing this family (16)
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MY179709A (en) * | 2009-09-10 | 2020-11-11 | Lam Res Corp | Replaceable upper chamber parts of plasma processing apparatus |
KR101817212B1 (ko) * | 2016-04-29 | 2018-02-21 | 세메스 주식회사 | 처리액 분사 유닛 및 기판 처리 장치 |
KR102553629B1 (ko) | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
TWI618111B (zh) * | 2017-02-10 | 2018-03-11 | 台灣美日先進光罩股份有限公司 | 電漿蝕刻腔體的氣體側噴嘴與電漿反應裝置 |
KR101884852B1 (ko) * | 2017-11-10 | 2018-08-02 | 세메스 주식회사 | 처리액 분사 유닛 및 기판 처리 장치 |
US10876208B2 (en) * | 2018-01-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for fabricating a semiconductor device |
US10943768B2 (en) * | 2018-04-20 | 2021-03-09 | Applied Materials, Inc. | Modular high-frequency source with integrated gas distribution |
KR102034729B1 (ko) * | 2018-05-04 | 2019-10-21 | (주)뉴젠텍 | 플라즈마 발생 및 유도를 위한 플라즈마 블록 |
KR101981559B1 (ko) * | 2018-07-11 | 2019-05-23 | 세메스 주식회사 | 기판 처리 장치 |
WO2020023409A1 (en) * | 2018-07-24 | 2020-01-30 | Applied Materials, Inc. | Optically transparent pedestal for fluidly supporting a substrate |
US20220020563A1 (en) * | 2018-11-26 | 2022-01-20 | Kyocera Corporation | Gas nozzle, manufacturing method of gas nozzle, and plasma treatment device |
CN109600898B (zh) * | 2018-12-13 | 2020-04-17 | 大连理工大学 | 一种喷淋式电极及放电系统 |
GB202001781D0 (en) * | 2020-02-10 | 2020-03-25 | Spts Technologies Ltd | Pe-Cvd apparatus and method |
TWI767244B (zh) * | 2020-05-29 | 2022-06-11 | 朗曦科技股份有限公司 | 半導體製程腔體之氣體噴頭 |
JP2021048405A (ja) * | 2020-11-30 | 2021-03-25 | ピコサン オーワイPicosun Oy | 基板の保護 |
CN117427792A (zh) * | 2022-07-14 | 2024-01-23 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备、气体喷淋头及其制造方法 |
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US20200017972A1 (en) | 2020-01-16 |
US20160047040A1 (en) | 2016-02-18 |
CN106575597A (zh) | 2017-04-19 |
CN109637922A (zh) | 2019-04-16 |
KR20170042727A (ko) | 2017-04-19 |
TWI674040B (zh) | 2019-10-01 |
TW201616923A (zh) | 2016-05-01 |
WO2016025187A1 (en) | 2016-02-18 |
JP6602370B2 (ja) | 2019-11-06 |
JP2020043079A (ja) | 2020-03-19 |
TW201941664A (zh) | 2019-10-16 |
TWI687134B (zh) | 2020-03-01 |
CN106575597B (zh) | 2019-01-15 |
US10465288B2 (en) | 2019-11-05 |
US11053590B2 (en) | 2021-07-06 |
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