JP2017526821A - 低圧化学気相成長に基づくペロブスカイト膜、その製造システム、製造方法、ソーラーセルおよびled。 - Google Patents
低圧化学気相成長に基づくペロブスカイト膜、その製造システム、製造方法、ソーラーセルおよびled。 Download PDFInfo
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- JP2017526821A JP2017526821A JP2017509804A JP2017509804A JP2017526821A JP 2017526821 A JP2017526821 A JP 2017526821A JP 2017509804 A JP2017509804 A JP 2017509804A JP 2017509804 A JP2017509804 A JP 2017509804A JP 2017526821 A JP2017526821 A JP 2017526821A
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Abstract
Description
Claims (23)
- 原料物質が有機ハライド化合物AXおよび金属ハライド化合物BX2を含み、AXのハロゲンXとBX2のハロゲンXとは同一または異なる、ペロブスカイト膜の製造システムであって、
炉として使用するためであり、縦方向に細長く、閉じた中空構造を有し、
それぞれ気体の導入および排出のためであり、吸気部は不活性ガスを導入するために調整されるように構成される吸気部および排気部と、
AXガスを発生させるためのAXを収納する蒸発ユニットの配置に使用するためであり、前記不活性ガスの上流側のセクションに実質的に対応する第1セクションと、
それぞれに前記BX2を事前に堆積された1つ以上の基板の配置に使用するためであり、前記不活性ガスの下流側のセクションに実質的に対応する第2セクションと、を含むハウジングと、
前記ハウジングの前記第1セクションに接続され、前記AXの第1温度を制御するための第1温度制御ユニットと、
前記ハウジングの前記第2セクションに接続され、前記BX2が事前に堆積された前記1つ以上の基板の第2温度を制御するための第2温度制御ユニットと、を備えるシステム。 - 堆積の間に、前記AXガスは前記吸気部から導入される前記不活性ガスに運ばれ、前記1つ以上の基板に向けて移動し、前記BX2と反応して前記1つ以上の基板のそれぞれの上にペロブスカイト膜を形成する請求項1に記載のシステム。
- 前記ハウジングの排気部に接続され、前記ハウジングの内部を低圧に真空引きするためのポンプユニットを備える請求項1に記載のシステム。
- 前記低圧は1Paと大気圧との間の範囲内である請求項3に記載のシステム。
- 前記第1温度制御ユニットは、前記AXを蒸発させ前記AXガスを発生させるための第1発熱体を含む請求項1に記載のシステム。
- 前記第1温度は150℃と350℃との間の範囲内に制御される請求項5に記載のシステム。
- 前記第2温度制御ユニットは、前記1つ以上の基板を加熱するための第2発熱体を含む請求項1に記載のシステム。
- 前記第2温度は室温と170℃との間の範囲内に制御される請求項7に記載のシステム。
- 前記排気部に接続された、ドーパント原料を収納するための第2蒸発ユニットを備え、
前記第2蒸発ユニットの第3温度は、ドーパントガスを発生させるために制御され、
前記吸気部は、前記不活性ガスおよび前記ドーパントガスを前記ハウジングに導入するために調整されるように構成され、
前記AXガスは前記不活性ガスおよび前記ドーパントガスに運ばれ、前記1つ以上の基板に向けて移動し、前記AXガスおよび前記ドーパントガスは前記BX2と反応して前記1つ以上の基板のそれぞれの上にドープされたペロブスカイト膜を形成する請求項1に記載のシステム。 - 前記第2蒸発ユニットは、前記ドーパントガス流を調整するために前記不活性ガス中の前記ドーパントガスの分圧を制御するバルブを含む請求項9に記載のシステム。
- 炉として使用するためのハウジングを含むシステムを用いるペロブスカイト膜の製造方法であって、
前記ハウジングは、縦方向に細長く、閉じた中空構造を有し、
気体の導入および排出のそれぞれのためであって、吸気部は前記ハウジング内に不活性ガスを導入するために調整されるように構成される吸気部および排気部と、
前記不活性ガスの上流側のセクションに実質的に対応する第1セクションと、
前記不活性ガスの下流側のセクションに実質的に対応する第2セクションと、を含み、
ペロブスカイト膜の原料物質は、有機ハライド化合物AXおよび金属ハライド化合物BX2を含み、AXのハロゲンXとBX2のハロゲンXとは同一または異なり、
1つ以上の基板のそれぞれに前記BX2が事前に堆積され、前記第2セクションに前記1つ以上の基板を配置する工程と、
前記AXを収納し、前記AXガスを発生させるための蒸発ユニットを前記第1セクションに配置する工程と、
前記ハウジングの内部を低圧に真空引きする工程と、
前記BX2が事前に堆積された前記1つ以上の基板の第2温度を制御する工程と、
前記AXの第1温度を制御する工程と、
前記吸気部を調整し、前記ハウジング内へと不活性ガスを導入する工程と、を有し、
堆積の間に、前記AXガスは前記吸気部から導入される前記不活性ガスに運ばれ、前記1つ以上の基板に向けて移動し、前記BX2と反応して前記1つ以上の基板のそれぞれの上にペロブスカイト膜を形成する方法。 - 前記低圧は1Paと大気圧との間の範囲内である請求項11に記載の方法。
- 前記第1温度を制御する工程は、前記AXを蒸発させ前記AXガスを発生させるために前記AXを加熱する工程を含む請求項11に記載のシステム。
- 前記第2温度を制御する工程は前記1つ以上の基板を加熱する工程を含む請求項11に記載の方法。
- 前記第1温度を制御する工程は、前記AXを蒸発させ前記AXガスを発生させるために所定の持続時間にわたって前記AXを加熱する工程と、前記加熱を停止し前記AXで過飽和した前記ペロブスカイト膜から前記AXを脱離させることで、前記AXで過飽和した前記ペロブスカイト膜を前記AXで飽和したペロブスカイト膜に変換する逆転プロセスを促進する工程と、を含む請求項11に記載の方法。
- 各基板の位置および方向の少なくとも1つ、並びに前記基板のパッキング密度を調整する工程を含む請求項11に記載の方法。
- ドーパントガスを発生させるためにドーパント原料を収納し、前記吸気部に接続された第2蒸発ユニットの第3温度を制御する工程と、
前記吸気部を調整し、前記不活性ガスおよび前記ドーパントガスを前記ハウジングに導入する工程と、を有し、
前記AXガスは前記不活性ガスおよび前記ドーパントガスに運ばれ、前記1つ以上の基板に向けて移動し、前記AXガスおよび前記ドーパントガスは前記BX2と反応して前記1つ以上の基板のそれぞれの上にペロブスカイト膜を形成する請求項11に記載の方法。 - 前記第2蒸発ユニットに含まれ、前記ドーパントガス流を調整するためのバルブを調整し、前記不活性ガス中の前記ドーパントガスの分圧を制御する工程を含む請求項17に記載の方法。
- 請求項11の方法を用いて製造されたペロブスカイト膜。
- 請求項11の方法を用いて製造されたペロブスカイト膜を含むソーラーセル。
- 請求項11の方法を用いて製造されたペロブスカイト膜を含むLED。
- 前記BX2が事前に堆積された前記1つ以上の基板は、前記BX2が浸透したメソポーラスアルミナを含み、前記1つ以上の基板の上に形成された前記メソポーラスアルミナの穴の内表面に前記BX2が事前に堆積される請求項21に記載のLED。
- エレクトロルミネッセンスは、前記メソポーラスアルミナを有さずに製造されたペロブスカイト膜を含むLEDのエレクトロルミネッセンスより強い請求項22に記載のLED。
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US20170268128A1 (en) | 2017-09-21 |
EP3183376A4 (en) | 2017-06-28 |
CN106661729A (zh) | 2017-05-10 |
EP3183376B1 (en) | 2020-03-25 |
AU2015304774B2 (en) | 2018-08-30 |
JP6649649B2 (ja) | 2020-02-19 |
US10975498B2 (en) | 2021-04-13 |
WO2016027450A1 (en) | 2016-02-25 |
AU2015304774A1 (en) | 2017-03-09 |
KR101869212B1 (ko) | 2018-06-19 |
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KR20170037622A (ko) | 2017-04-04 |
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