JP2017510986A - 対称軸を有する半導体発光デバイス - Google Patents
対称軸を有する半導体発光デバイス Download PDFInfo
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- JP2017510986A JP2017510986A JP2016555550A JP2016555550A JP2017510986A JP 2017510986 A JP2017510986 A JP 2017510986A JP 2016555550 A JP2016555550 A JP 2016555550A JP 2016555550 A JP2016555550 A JP 2016555550A JP 2017510986 A JP2017510986 A JP 2017510986A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 27
- 238000005253 cladding Methods 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000006104 solid solution Substances 0.000 description 8
- XQMVBICWFFHDNN-UHFFFAOYSA-N 5-amino-4-chloro-2-phenylpyridazin-3-one;(2-ethoxy-3,3-dimethyl-2h-1-benzofuran-5-yl) methanesulfonate Chemical compound O=C1C(Cl)=C(N)C=NN1C1=CC=CC=C1.C1=C(OS(C)(=O)=O)C=C2C(C)(C)C(OCC)OC2=C1 XQMVBICWFFHDNN-UHFFFAOYSA-N 0.000 description 6
- 239000002826 coolant Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
- H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Optical Filters (AREA)
Abstract
Description
2、6 接触層
3、5 クラッディング層
4 導波層
7 金属p接点
8 対称軸
9 電気的接続
10 光
Claims (8)
- 2以上のレーザーダイオードを備える半導体発光デバイスであって、
各レーザーダイオードが対称軸を有することを特徴とし、それらの対称軸が一致するように前記レーザーダイオードが発光デバイスの対称軸上に直列に配置され、前記レーザーダイオードの面が、それらが電気的及び機械的に接触してレーザーダイオードのバーを形成するように接続され、その指向特性は前記発光デバイスの前記対称軸と一致する対称軸を有する、半導体発光デバイス。 - 前記各レーザーダイオードがディスク光共振器を有することを特徴とする、請求項1に記載の半導体発光デバイス。
- 前記各レーザーダイオードが中空ディスク光共振器を有することを特徴とする、請求項1に記載の半導体発光デバイス。
- 前記各レーザーダイオードがリング光共振器を有することを特徴とする、請求項1に記載の半導体発光デバイス。
- 前記各レーザーダイオードが多角形光共振器を有することを特徴とする、請求項1に記載の半導体発光デバイス。
- 前記各レーザーダイオードが中空多角形光共振器を有することを特徴とする、請求項1に記載の半導体発光デバイス。
- 前記各レーザーダイオードがIII−窒化物からなることを特徴とする、請求項1に記載の半導体発光デバイス。
- 請求項1から7のいずれか一項に記載の発光デバイスが、蛍光体の光学的励起のための可視光源または紫外光源として使用されていることを特徴とする、蛍光体を有するレーザーランプ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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RU2014108564 | 2014-03-05 | ||
RU2014108564/28A RU2577787C2 (ru) | 2014-03-05 | 2014-03-05 | Полупроводниковое светоизлучающее устройство с осью симметрии |
PCT/RU2015/000137 WO2015133936A1 (en) | 2014-03-05 | 2015-03-05 | Semiconductor light-emitting device with an axis of symmetry |
Publications (2)
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JP2017510986A true JP2017510986A (ja) | 2017-04-13 |
JP6334726B2 JP6334726B2 (ja) | 2018-05-30 |
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JP2016555550A Active JP6334726B2 (ja) | 2014-03-05 | 2015-03-05 | 対称軸を有する半導体発光デバイス |
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US (1) | US9948065B2 (ja) |
EP (1) | EP3114738B1 (ja) |
JP (1) | JP6334726B2 (ja) |
CN (1) | CN106134021B (ja) |
RU (1) | RU2577787C2 (ja) |
WO (1) | WO2015133936A1 (ja) |
Families Citing this family (4)
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DE102017121480B4 (de) * | 2017-09-15 | 2024-04-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes Halbleiterbauteil |
US11658453B2 (en) * | 2018-01-29 | 2023-05-23 | Ronald LaComb | Concentric cylindrical circumferential laser |
RU2722407C1 (ru) * | 2019-09-03 | 2020-05-29 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (АО "НИИ "Полюс" им. М.Ф. Стельмаха) | Импульсный лазерный полупроводниковый излучатель |
RU195797U1 (ru) * | 2019-09-03 | 2020-02-05 | Российская Федерация в лице Министерства промышленности и торговли Российской Федерации (Минпромторг России) | Импульсный лазерный полупроводниковый излучатель |
Citations (5)
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JPH0878778A (ja) * | 1994-09-07 | 1996-03-22 | Mitsubishi Electric Corp | 半導体レーザ装置,及びその製造方法 |
JP2001077463A (ja) * | 1999-09-01 | 2001-03-23 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体光素子及びその製造方法 |
JP2001085790A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Corp | 発光増幅素子 |
JP2011243951A (ja) * | 2010-04-19 | 2011-12-01 | Harison Toshiba Lighting Corp | 発光装置 |
US20130143338A1 (en) * | 2011-12-02 | 2013-06-06 | Northrop Grumman Systems Corp. | Methods of fabrication of high-density laser diode stacks |
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- 2014-03-05 RU RU2014108564/28A patent/RU2577787C2/ru active
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- 2015-03-05 EP EP15715509.4A patent/EP3114738B1/en active Active
- 2015-03-05 US US15/123,381 patent/US9948065B2/en active Active
- 2015-03-05 WO PCT/RU2015/000137 patent/WO2015133936A1/en active Application Filing
- 2015-03-05 CN CN201580011511.6A patent/CN106134021B/zh active Active
- 2015-03-05 JP JP2016555550A patent/JP6334726B2/ja active Active
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US20130143338A1 (en) * | 2011-12-02 | 2013-06-06 | Northrop Grumman Systems Corp. | Methods of fabrication of high-density laser diode stacks |
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Publication number | Publication date |
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WO2015133936A1 (en) | 2015-09-11 |
US9948065B2 (en) | 2018-04-17 |
EP3114738B1 (en) | 2021-10-06 |
US20170110853A1 (en) | 2017-04-20 |
RU2014108564A (ru) | 2015-09-10 |
EP3114738A1 (en) | 2017-01-11 |
CN106134021B (zh) | 2019-01-18 |
RU2577787C2 (ru) | 2016-03-20 |
CN106134021A (zh) | 2016-11-16 |
JP6334726B2 (ja) | 2018-05-30 |
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