JP6207629B2 - オプトエレクトロニクス半導体チップ - Google Patents
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Description
Claims (22)
- オプトエレクトロニクス半導体チップにおいて、
− 相互に間隔を空けて配置されている多数の活性エレメント(1)と、
− 前記活性エレメント(1)に対して横断する方向に配置されている支持体(2)とを有し、
− 前記活性エレメント(1)は、それぞれ、前記支持体(2)に対して垂直方向に延びる主軸を有し、
− 前記主軸は相互に平行に配向されていて、
− 前記活性エレメント(1)はそれぞれ中央のコア領域(10)を有し、前記コア領域(10)は少なくとも2層で取り囲まれていて、活性層(11)が前記コア領域(10)を取り囲み、かつカバー層(12)が前記活性層(11)を取り囲み、
− 前記コア領域(10)は、第1の半導体材料で形成されていて、
− 前記活性層(11)は、発光材料を有し、
− 前記カバー層(12)は、p型導電性窒化物化合物半導体材料で形成されていて、かつ
− 少なくとも1種の変換体材料(4)が、前記多数の活性エレメント(1)の周面を取り囲み、
− 前記カバー層(12)は、0.1nm〜100nmの層厚を有し、前記カバー層(12)の層厚は前記変換体材料(4)と前記活性層(11)との距離に相当し、
− 前記変換体材料(4)は、変換物質を有するか又は変換物質及びマトリックス材料を有し、且つ導電性であり、
− 前記活性層(11)の発光材料中で励起子が形成され、前記励起子の一部は、一次電磁放射を発しながら放射崩壊し、かつ一部は、双極子−双極子相互作用を介して前記変換体材料(4)に伝達されることができ、かつ、前記変換体材料(4)に伝達される励起子は二次電磁放射を発しながら崩壊でき、かつ、前記変換体材料(4)は一次電磁放射を少なくとも部分的に二次電磁放射に変換し、かつ、前記二次電磁放射は前記一次電磁放射とは異なる波長領域を有する、
オプトエレクトロニクス半導体チップ。 - 前記一次電磁放射は、電磁スペクトルのUV領域〜緑色領域、赤外領域又は電磁スペクトルの赤色領域にある、請求項1に記載の半導体チップ。
- 前記発光材料は、第3の半導体材料である、請求項1または2に記載の半導体チップ。
- 前記発光材料は、GaN、InGaN、AlGaN又はAlInGaNを基礎とするか又はGaN、InGaN、AlGaN又はAlInGaNからなる、請求項1から3までのいずれか1項に記載の半導体チップ。
- 前記活性層(11)の発光材料の励起子及び変換体材料(4)は、相互に平行方向に配向した遷移双極子モーメントを有する、請求項1に記載の半導体チップ。
- 前記活性エレメント(1)は、前記活性エレメント(1)の主軸に対して垂直方向で直径を有し、前記活性エレメント(1)の相互の最小の間隔は、前記活性エレメント(1)の最大の直径の二倍である、請求項1から5までのいずれか1項に記載の半導体チップ。
- 前記変換体材料(4)が、前記活性エレメント(1)の間の空間を完全に埋めている、請求項1から6までのいずれか1項に記載の半導体チップ。
- 前記変換体材料(4)と前記カバー層(12)とは、双極子−双極子相互作用、静電気相互作用、水素架橋結合、ファン・デル・ワールス相互作用、立体的相互作用、エントロピー相互作用又は共有結合によって相互に結合されている、請求項1から7までのいずれか1項に記載の半導体チップ。
- 前記マトリックス材料は、シリコーン、エステル含有ポリマー、エポキシド含有ポリマー、アミン含有ポリマー、ポリアセチレン含有ポリマー、ビニル含有ポリマー、カルバゾール含有ポリマー、アクリル含有ポリマー、スチレン含有ポリマー及び無機ハイブリッド材料又はこれらの組み合わせを有する群から選択されている、請求項1から8までのいずれか1項に記載の半導体チップ。
- 前記変換物質は、発光ポリマー、無機蛍光体、有機分子又は遷移金属錯体である、請求項1から9までのいずれか1項に記載の半導体チップ。
- 前記発光ポリマーは、青色のスペクトル領域で発光する基本骨格と、赤色及び/又は緑色及び/又は黄色及び/又はオレンジ色のスペクトル領域で発光する側鎖とを有する、請求項10に記載の半導体チップ。
- 前記発光ポリマーは、フルオレン含有ポリマー又はパラ−フェニレン−ビニレン含有ポリマーを有する、請求項10に記載の半導体チップ。
- 前記パラ−フェニレン−ビニレン含有ポリマーは、次の式
R1、R2、R3、R4、R5及びR6は、同じ又は異なるように選択でき、かつ、H、飽和及び不飽和のアルキル基、完全に又は部分的に置換された飽和及び不飽和のアルキル基、アルコキシ基、アミン、アミド、エステル、芳香族基、完全に又は部分的に置換された芳香族基、縮合された芳香族基、完全に又は部分的に置換された縮合された芳香族基、複素環式基、完全に又は部分的に置換された複素環式基、縮合された複素環式基、完全に又は部分的に置換された縮合された複素環式基を有する群から選択され、かつ
x、y、zは、同じ又は異なるように選択でき、かつ1≦x、y、z≦1000である]を有する請求項12に記載の半導体チップ。 - 前記パラ−フェニレン−ビニレン含有ポリマーは、次の式
R1′、R3′、R5′及びR6′は、同じ又は異なるように選択でき、かつ、H、飽和及び不飽和のアルキル基、完全に又は部分的に置換された飽和及び不飽和のアルキル基、芳香族基、完全に又は部分的に置換された芳香族基、縮合された芳香族基、完全に又は部分的に置換された縮合された芳香族基、複素環式基、完全に又は部分的に置換された複素環式基、縮合された複素環式基、完全に又は部分的に置換された縮合された複素環式基を有する群から選択され、かつ
x、y、zは、同じ又は異なるように選択でき、かつ1≦x、y、z≦1000である]を有する請求項12又は13に記載の半導体チップ。 - 前記カバー層(12)が、0.1nm〜4nmの層厚を有する、請求項1から14までのいずれか1項に記載の半導体チップ。
- 前記カバー層(12)が、前記活性層(11)を完全に取り囲みかつ完全に覆っている、請求項1から15までのいずれか1項に記載の半導体チップ。
- 前記活性エレメント(1)の主軸に対して垂直方向の、前記活性エレメント(1)の直径が、1μm〜2μm又は2μm〜4μmである、請求項1から16までのいずれか1項に記載の半導体チップ。
- 前記変換物質が、前記活性エレメント(1)に隣接する領域内では、前記活性エレメント(1)から離れている変換体材料(4)の領域内よりも高い濃度を有する、請求項1から17までのいずれか1項に記載の半導体チップ。
- 前記コア領域(10)が、前記活性エレメント(1)の主軸に対して垂直の直径1nm〜1μmを有する、請求項1から18までのいずれか1項に記載の半導体チップ。
- 前記活性層(11)の層厚が、1〜30nmである、請求項1から19までのいずれか1項に記載の半導体チップ。
- 前記活性層(11)が、空間を有する、請求項1から20までのいずれか1項に記載の半導体チップ。
- 前記活性層(11)の表面が、粗面化されている、請求項1から21までのいずれか1項に記載の半導体チップ。
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DE102013100291.9 | 2013-01-11 | ||
DE102013100291.9A DE102013100291B4 (de) | 2013-01-11 | 2013-01-11 | Optoelektronischer Halbleiterchip |
PCT/EP2013/077199 WO2014108289A1 (de) | 2013-01-11 | 2013-12-18 | Optoelektronischer halbleiterchip |
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JP2016510502A JP2016510502A (ja) | 2016-04-07 |
JP6207629B2 true JP6207629B2 (ja) | 2017-10-04 |
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JP (1) | JP6207629B2 (ja) |
KR (1) | KR20150107788A (ja) |
CN (1) | CN104919607B (ja) |
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DE102013114466A1 (de) | 2013-12-19 | 2015-06-25 | Osram Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102014117995A1 (de) | 2014-12-05 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
US11373991B2 (en) * | 2020-02-06 | 2022-06-28 | Lumileds Llc | Methods of manufacturing light-emitting devices with metal inlays and bottom contacts |
US11575074B2 (en) | 2020-07-21 | 2023-02-07 | Lumileds Llc | Light-emitting device with metal inlay and top contacts |
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- 2013-12-18 US US14/760,177 patent/US9496462B2/en active Active
- 2013-12-18 KR KR1020157021480A patent/KR20150107788A/ko not_active Application Discontinuation
- 2013-12-18 CN CN201380070007.4A patent/CN104919607B/zh not_active Expired - Fee Related
- 2013-12-18 WO PCT/EP2013/077199 patent/WO2014108289A1/de active Application Filing
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DE102013100291B4 (de) | 2021-08-05 |
WO2014108289A1 (de) | 2014-07-17 |
KR20150107788A (ko) | 2015-09-23 |
CN104919607B (zh) | 2017-08-08 |
DE102013100291A1 (de) | 2014-07-17 |
JP2016510502A (ja) | 2016-04-07 |
US20150349215A1 (en) | 2015-12-03 |
US9496462B2 (en) | 2016-11-15 |
CN104919607A (zh) | 2015-09-16 |
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