JP2017223815A5 - - Google Patents

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Publication number
JP2017223815A5
JP2017223815A5 JP2016118475A JP2016118475A JP2017223815A5 JP 2017223815 A5 JP2017223815 A5 JP 2017223815A5 JP 2016118475 A JP2016118475 A JP 2016118475A JP 2016118475 A JP2016118475 A JP 2016118475A JP 2017223815 A5 JP2017223815 A5 JP 2017223815A5
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Japan
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upper electrode
width
edge
shape
overlaps
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JP2016118475A
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Japanese (ja)
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JP6563367B2 (ja
JP2017223815A (ja
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Priority to US15/615,834 priority patent/US10551704B2/en
Publication of JP2017223815A publication Critical patent/JP2017223815A/ja
Publication of JP2017223815A5 publication Critical patent/JP2017223815A5/ja
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JP2016118475A 2016-06-15 2016-06-15 アクティブマトリクス基板、アクティブマトリクス基板の製造方法および表示装置 Active JP6563367B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016118475A JP6563367B2 (ja) 2016-06-15 2016-06-15 アクティブマトリクス基板、アクティブマトリクス基板の製造方法および表示装置
US15/615,834 US10551704B2 (en) 2016-06-15 2017-06-07 Active matrix substrate method of manufacturing active matrix substrate, and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016118475A JP6563367B2 (ja) 2016-06-15 2016-06-15 アクティブマトリクス基板、アクティブマトリクス基板の製造方法および表示装置

Publications (3)

Publication Number Publication Date
JP2017223815A JP2017223815A (ja) 2017-12-21
JP2017223815A5 true JP2017223815A5 (enExample) 2018-11-01
JP6563367B2 JP6563367B2 (ja) 2019-08-21

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ID=60659513

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JP2016118475A Active JP6563367B2 (ja) 2016-06-15 2016-06-15 アクティブマトリクス基板、アクティブマトリクス基板の製造方法および表示装置

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US (1) US10551704B2 (enExample)
JP (1) JP6563367B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020202286A1 (ja) * 2019-03-29 2020-10-08 シャープ株式会社 表示デバイス、表示デバイスの製造方法
JP7284613B2 (ja) * 2019-03-29 2023-05-31 シャープ株式会社 アクティブマトリクス基板およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015762A (ja) * 1999-07-02 2001-01-19 Seiko Epson Corp 薄膜半導体装置とその製造方法
US6828584B2 (en) * 2001-05-18 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5085859B2 (ja) * 2005-10-28 2012-11-28 株式会社ジャパンディスプレイイースト 画像表示装置及びその製造方法
EP1843194A1 (en) * 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
WO2008149873A1 (en) * 2007-05-31 2008-12-11 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
JP2009122256A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
US8409979B2 (en) * 2011-05-31 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW201338173A (zh) * 2012-02-28 2013-09-16 Sony Corp 電晶體、製造電晶體之方法、顯示裝置及電子機器
WO2014147964A1 (ja) * 2013-03-18 2014-09-25 パナソニック株式会社 薄膜半導体基板、発光パネル及び薄膜半導体基板の製造方法
JP2015122417A (ja) * 2013-12-24 2015-07-02 ソニー株式会社 半導体装置およびその製造方法、並びに表示装置および電子機器

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