JP2017220691A - 増幅回路、及びマルチパスネステッドミラー増幅回路 - Google Patents
増幅回路、及びマルチパスネステッドミラー増幅回路 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45968—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction
- H03F3/45973—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit
- H03F3/45977—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit using switching means, e.g. sample and hold
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45932—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by using feedback means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/375—Circuitry to compensate the offset being present in an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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Abstract
Description
図6は、従来の増幅回路を示すブロック図である。
従来の増幅回路801は、入力端子IN1及びIN2、出力端子OUT1及びOUT2、チョッパスイッチ回路831及び841、VI変換回路832、同相帰還回路833、LPF回路851を、備えている。
また、LPF回路851は、減衰効果を高めると入力信号Vsiに基づく電圧をも減衰させてしまうため、増幅回路としての周波数領域が制約される等の課題があった。
本実施形態の増幅回路101は、入力端子IN1及びIN2、出力端子OUT1及びOUT2、チョッパスイッチ回路131、VI変換回路132、同相帰還回路133、サンプル回路134、ホールド回路135、を、備えている。Vniは、VI変換回路132の入力端子のオフセット電圧を示す。
ホールド回路135は、サンプル回路134が出力した電荷(2×Qso)をホールドして、増幅回路101の出力端子OUT1及びOUT2に出力する。
サンプル回路134は、入力端子INX及びINY、出力端子OUTX及びOUTY、スイッチ441〜444、451〜454、461〜464、471〜474、容量431〜434、を備えている。容量431と432、容量433と434は、サンプルするための容量ペアを構成する。各スイッチは、表示した数字に対応したクロックでオンオフが制御される。
期間[0−1T]において、クロック1aがハイレベルなのでスイッチ443とスイッチ444がオンして、容量432に電荷(+Qso−Qno)がサンプルされる。
期間[2T−3T]において、クロック2aがハイレベルなのでスイッチ451とスイッチ452がオンして、容量434に電荷(−Qso−Qno)がサンプルされる。
また、図2のサンプル回路134は、以下のように、クロック3及び4でサンプルした電荷を減算してホールド回路135に出力する。
図3のサンプル回路134から、サンプルするための容量ペアを1つにして、入力端子INXとINYの間にクロック3で制御されるスイッチ581を設けた。
図4のサンプル回路134は、基本的には図3のサンプル回路134と同様の機能を満たすことが出来る。
例えば、同相帰還回路133は、特に必要がなければ設けなくても良い。
マルチパスネステッドミラー増幅回路は、本発明の増幅回路101、入力端子IN1及びIN2、出力端子OUT、容量741及び742、増幅器731〜733を備えている。マルチパスネステッドミラー増幅回路は、増幅回路101と増幅器731及び733で構成された高利得増幅パスと、増幅器732及び733で構成された広帯域増幅パスとを併せて有している。
131 チョッパスイッチ回路
132 VI変換回路
133 同相帰還回路
134 サンプル回路
135 ホールド回路
321、322 電流源
731、732、733 増幅器
Claims (6)
- 入力信号を増幅する増幅回路であって、
前記入力信号の極性を正相または逆相の関係で出力するチョッパスイッチ回路と、
前記チョッパスイッチ回路に接続され、前記チョッパスイッチ回路の出力電圧に基づく出力電流を生成するVI変換回路と、
前記VI変換回路に接続され、前記VI変換回路の出力電流に基づいてサンプルし、サンプルした電荷を加算または減算した電荷に基づく電圧を出力するサンプル回路と、
前記サンプル回路に接続され、サンプル回路の出力する電圧をホールドするホールド回路と、
を備えたことを特徴とする増幅回路。 - 前記サンプル回路は、容量ペアを備え、
前記容量ペアが並列接続されることに基づき前記サンプルした電荷を加算または減算する動作をし、
この動作に同期して、前記容量ペアが前記ホールド回路に接続されることにより、前記加算または減算した電荷に基づく電圧を出力する、
ことを特徴とする請求項1に記載の増幅回路。 - 前記容量ペアは、
前記チョッパスイッチ回路が前記入力信号を正相の関係で出力するときに、前記VI変換回路の出力電流に基づく電荷をサンプルする第一の容量と、
前記チョッパスイッチ回路が前記入力信号を逆相の関係で出力するときに、前記VI変換回路の出力電流に基づく電荷をサンプルする第二の容量と、
で構成されることを特徴とする請求項2に記載の増幅回路。 - 前記サンプル回路は、入力端子と前記容量ペアの間と、前記容量ペアと出力端子の間に夫々スイッチを備え、
前記スイッチの端子間にクランプ素子を備えた、
ことを特徴とする請求項1から3のいずれかに記載の増幅回路。 - 前記クランプ素子は、PN接合で構成された
ことを特徴とする請求項4に記載の増幅回路。 - 入力端子に接続された請求項1から5のいずれかに記載の増幅回路と、
前記増幅回路の出力端子に接続された第一の増幅器と、
前記入力端子に接続された第二の増幅器と、
前記第一の増幅器の出力端子と前記第二の増幅器の出力端子に接続された第三の増幅器と、
を備えたことを特徴とするマルチパスネステッドミラー増幅回路。
Priority Applications (5)
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JP2016111232A JP6796953B2 (ja) | 2016-06-02 | 2016-06-02 | 増幅回路、及びマルチパスネステッドミラー増幅回路 |
TW106117100A TWI704766B (zh) | 2016-06-02 | 2017-05-24 | 放大電路以及多路徑巢狀米勒放大電路 |
US15/608,182 US10148238B2 (en) | 2016-06-02 | 2017-05-30 | Amplifier circuit and multipath nested miller amplifier circuit |
KR1020170068688A KR102424468B1 (ko) | 2016-06-02 | 2017-06-01 | 증폭 회로, 및 멀티패스 네스티드 밀러 증폭 회로 |
CN201710408306.4A CN107465394B (zh) | 2016-06-02 | 2017-06-02 | 放大电路及多路嵌套式密勒放大电路 |
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JP2021069000A (ja) * | 2019-10-23 | 2021-04-30 | エイブリック株式会社 | 増幅器 |
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Citations (3)
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JPH11239032A (ja) * | 1997-12-19 | 1999-08-31 | Nikon Corp | モーター用h−ブリッジ電力増幅器 |
JP2014165759A (ja) * | 2013-02-26 | 2014-09-08 | Seiko Instruments Inc | 演算増幅回路 |
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JPH11239032A (ja) * | 1997-12-19 | 1999-08-31 | Nikon Corp | モーター用h−ブリッジ電力増幅器 |
JP2014165759A (ja) * | 2013-02-26 | 2014-09-08 | Seiko Instruments Inc | 演算増幅回路 |
JP2014225742A (ja) * | 2013-05-15 | 2014-12-04 | ルネサスエレクトロニクス株式会社 | 信号処理回路、レゾルバデジタルコンバータ、およびマルチパスネステッドミラー増幅回路 |
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JP2021069000A (ja) * | 2019-10-23 | 2021-04-30 | エイブリック株式会社 | 増幅器 |
JP7450362B2 (ja) | 2019-10-23 | 2024-03-15 | エイブリック株式会社 | 増幅器 |
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JP6796953B2 (ja) | 2020-12-09 |
TWI704766B (zh) | 2020-09-11 |
TW201743558A (zh) | 2017-12-16 |
CN107465394B (zh) | 2021-12-21 |
US20170353166A1 (en) | 2017-12-07 |
CN107465394A (zh) | 2017-12-12 |
KR20170136999A (ko) | 2017-12-12 |
US10148238B2 (en) | 2018-12-04 |
KR102424468B1 (ko) | 2022-07-22 |
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