JP2017183411A - プリント配線板の製造方法 - Google Patents
プリント配線板の製造方法 Download PDFInfo
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- JP2017183411A JP2017183411A JP2016066252A JP2016066252A JP2017183411A JP 2017183411 A JP2017183411 A JP 2017183411A JP 2016066252 A JP2016066252 A JP 2016066252A JP 2016066252 A JP2016066252 A JP 2016066252A JP 2017183411 A JP2017183411 A JP 2017183411A
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- heating
- resin composition
- wiring board
- printed wiring
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/036—Multilayers with layers of different types
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4632—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating thermoplastic or uncured resin sheets comprising printed circuits without added adhesive materials between the sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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Abstract
Description
[1] (A)支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する工程、
(B)樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する工程、及び
(C)接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する工程、を含むプリント配線板の製造方法であって、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))をXとし、
120℃以上における樹脂組成物層の最低溶融粘度をY(poise)としたとき、Y>2700Xの関係を満たすように熱硬化させる、プリント配線板の製造方法。
[2] Y>2700X>300の関係を満たす、[1]に記載のプリント配線板の製造方法。
[3] Xが、4以下である、[1]又は[2]に記載のプリント配線板の製造方法。
[4] Yが、4000poise以上である、[1]〜[3]のいずれかに記載のプリント配線板の製造方法。
[5] (A)支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する工程、
(B)樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する工程、及び
(C)接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する工程、を含むプリント配線板の製造方法であって、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))が、4以下であり、
T1(℃)以上における樹脂組成物層の最低溶融粘度が4000poise以上となるように熱硬化させる、プリント配線板の製造方法。
[6] T1が、50℃≦T1≦150℃の関係を満たす、[1]〜[5]のいずれかに記載のプリント配線板の製造方法。
[7] T1が、120℃≦T1≦150℃の関係を満たす、[1]〜[6]のいずれかに記載のプリント配線板の製造方法。
[8] T2が、150℃≦T2≦240℃の関係を満たす、[1]〜[7]のいずれかに記載のプリント配線板の製造方法。
[9] 工程(C)において、接着シートをT1(℃)にて加熱した後、さらにT2(℃)にて加熱し、熱硬化を行う、[1]〜[8]のいずれかに記載のプリント配線板の製造方法。
[10] 支持体が、プラスチックフィルムからなる、[1]〜[9]のいずれかに記載のプリント配線板の製造方法。
[11] [1]〜[10]のいずれかに記載のプリント配線板の製造方法により製造されたプリント配線板を備える、半導体装置。
[12] 内層基板と、該内層基板に設けられた絶縁層と、該絶縁層に接合している支持体とを有する積層構造体であって、支持体の端部から支持体の寸法に対して5%を除く範囲において、当該絶縁層の厚みのばらつきが1μm以下である、積層構造体。
[13] 支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートであって、
接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させる際、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))をXとし、
120℃以上における樹脂組成物層の最低溶融粘度をY(poise)としたとき、Y>2700Xの関係を満たす、接着シート。
本発明において、支持体についていう「MD方向(Machine Direction)」とは、支持体を製造する際の支持体の長手方向、すなわち製造時における長尺の支持体の搬送方向をいう。また、支持体についていう「TD方向(Transverse Direction)」とは、支持体を製造する際の支持体の幅方向をいい、MD方向に直交する方向である。なお、MD方向及びTD方向はいずれも、支持体の厚さ方向に対して直交する方向である。
本発明のプリント配線板の製造方法について詳細に説明する前に、本発明のプリント配線板の製造方法において使用される「接着シート」について説明する。
図1及び図2を参照して、本発明の実施形態にかかる支持体の膨張挙動の概略について説明する。
接着シートが備える樹脂組成物層に用いられる樹脂組成物は特に限定されず、その硬化物が十分な硬度と絶縁性とを有するものであればよい。樹脂組成物としては、例えば、硬化性樹脂とその硬化剤を含む組成物が挙げられる。硬化性樹脂としては、プリント配線板の絶縁層を形成する際に使用される従来公知の硬化性樹脂を用いることができ、中でもエポキシ樹脂が好ましい。したがって一実施形態において、樹脂組成物は、(a)エポキシ樹脂、(b)硬化剤及び(c)無機充填材を含む。樹脂組成物は、必要に応じて、さらに、熱可塑性樹脂、硬化促進剤、難燃剤及び有機充填剤を含んでいてもよい。
エポキシ樹脂としては、例えば、ビキシレノール型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビスフェノールAF型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリスフェノール型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、tert−ブチル−カテコール型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフトール型エポキシ樹脂、アントラセン型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、線状脂肪族エポキシ樹脂、ブタジエン構造を有するエポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、トリメチロール型エポキシ樹脂、テトラフェニルエタン型エポキシ樹脂等が挙げられる。エポキシ樹脂は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。(a)成分は、平均線熱膨張率を低下させる観点から、芳香族骨格含有エポキシ樹脂が好ましく、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、及びジシクロペンタジエン型エポキシ樹脂から選択される1種以上であることがより好ましく、ビスフェノールA型エポキシ樹脂、ナフタレン型エポキシ樹脂がさらに好ましい。芳香族骨格とは、一般に芳香族と定義される化学構造であり、多環芳香族及び芳香族複素環をも含む。
硬化剤としては、エポキシ樹脂を硬化する機能を有する限り特に限定されず、例えば、フェノール系硬化剤、ナフトール系硬化剤、活性エステル系硬化剤、ベンゾオキサジン系硬化剤、シアネートエステル系硬化剤、及びカルボジイミド系硬化剤などが挙げられる。硬化剤は1種単独で用いてもよく、又は2種以上を併用してもよい。(b)成分は、フェノール系硬化剤、ナフトール系硬化剤、活性エステル系硬化剤、カルボジイミド系硬化剤及びシアネートエステル系硬化剤から選択される1種以上であることが好ましい。
無機充填材の材料は特に限定されないが、例えば、シリカ、アルミナ、ガラス、コーディエライト、シリコン酸化物、硫酸バリウム、炭酸バリウム、タルク、クレー、雲母粉、酸化亜鉛、ハイドロタルサイト、ベーマイト、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、酸化マグネシウム、窒化ホウ素、窒化アルミニウム、窒化マンガン、ホウ酸アルミニウム、炭酸ストロンチウム、チタン酸ストロンチウム、チタン酸カルシウム、チタン酸マグネシウム、チタン酸ビスマス、酸化チタン、酸化ジルコニウム、チタン酸バリウム、チタン酸ジルコン酸バリウム、ジルコン酸バリウム、ジルコン酸カルシウム、リン酸ジルコニウム、及びリン酸タングステン酸ジルコニウム、炭化ケイ素等が挙げられる。これらの中でも炭化ケイ素、シリカが好適であり、シリカが特に好適である。またシリカとしては球形シリカが好ましい。無機充填材は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリオレフィン樹脂、ポリブタジエン樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルイミド樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、ポリフェニレンエーテル樹脂、ポリカーボネート樹脂、ポリエーテルエーテルケトン樹脂、ポリエステル樹脂が挙げられ、フェノキシ樹脂が好ましい。熱可塑性樹脂は、1種単独で用いてもよく、又は2種以上を組み合わせて用いてもよい。
硬化促進剤としては、例えば、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、グアニジン系硬化促進剤、金属系硬化促進剤等が挙げられ、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、金属系硬化促進剤が好ましく、アミン系硬化促進剤、イミダゾール系硬化促進剤、金属系硬化促進剤がより好ましい。硬化促進剤は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。また硬化促進剤は市販品を用いてもよい。
難燃剤としては、例えば、有機リン系難燃剤、有機系窒素含有リン化合物、窒素化合物、シリコーン系難燃剤、金属水酸化物等が挙げられる。難燃剤は1種単独で用いてもよく、又は2種以上を併用してもよい。
樹脂組成物は、伸びを向上させる観点から、(g)有機充填材を含んでもよい。有機充填材としては、プリント配線板の絶縁層を形成するに際し使用し得る任意の有機充填材を使用してよく、例えば、ゴム粒子、ポリアミド微粒子、シリコーン粒子等が挙げられる。
樹脂組成物は、さらに必要に応じて、他の添加剤を含んでいてもよく、斯かる他の添加剤としては、例えば、有機銅化合物、有機亜鉛化合物及び有機コバルト化合物等の有機金属化合物、並びに増粘剤、消泡剤、レベリング剤、密着性付与剤、及び着色剤等の樹脂添加剤等が挙げられる。
本発明の第1の実施形態のプリント配線板の製造方法は、(A)支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する工程、(B)樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する工程、及び(C)接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する工程、を含むプリント配線板の製造方法であって、T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))をXとし、120℃以上における樹脂組成物層の最低溶融粘度をY(poise)としたとき、Y>2700Xの関係を満たすように熱硬化させる。
工程(A)において、支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する。
工程(B)において、樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する。
工程(C)において、接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する。工程(C)は、熱硬化時の加熱条件を調整することで支持体の膨張・収縮を制御することができれば、T1(℃)からT2(℃)へ加熱する過程は特に限定されず、1ステップによる熱硬化であってもよく、2ステップによる熱硬化であってもよい。
i)樹脂組成物層を温度T1(℃)(但し50℃≦T1≦150℃)にて加熱する工程と、
ii)加熱後の樹脂組成物層を温度T2(℃)(但し150℃≦T2≦240℃)にて加熱させる工程と、を含む、即ち2ステップで加熱することが好ましい。
工程(C)終了後、支持体を除去する工程(D)を行ってもよい。
本発明の製造方法により得られたプリント配線板を用いて、かかるプリント配線板を備える半導体装置を製造することができる。
本発明の積層構造体は、内層基板と、該内層基板に設けられた絶縁層と、該絶縁層に接合している支持体とを有する積層構造体であって、支持体の端部から支持体の寸法に対して5%を除く範囲において、当該絶縁層の厚みのばらつきが1μm以下である。
<接着シートの製造>
−支持体の予備加熱条件−
下記の実施例及び比較例において支持体を調製するに際して採用した予備加熱条件を下記表に示す。なお、表中「張力」とは支持体のTD方向に加えられる張力を意味する。
アルキド樹脂系離型層付きPETフィルム(リンテック(株)製「AL5」、厚さ38μm、以下「離型PETフィルム」ともいう)を、空気雰囲気、常圧下、前記表の予備加熱条件2にてPETのTD方向に張力をかけながら加熱し、支持体を得た。
ビフェニル型エポキシ樹脂(エポキシ当量約290、日本化薬(株)製「NC3000H」)30部、ナフタレン型4官能エポキシ樹脂(エポキシ当量162、DIC(株)製「HP−4700」)5部、液状ビスフェノールA型エポキシ樹脂(エポキシ当量180、三菱化学(株)製「jER828EL」)15部、及びフェノキシ樹脂(重量平均分子量35000、三菱化学(株)製「YL7553BH30」、固形分30質量%のメチルエチルケトン(MEK)溶液)2部を、MEK8部及びシクロヘキサノン8部の混合溶剤に撹拌しながら加熱溶解させた。そこへ、トリアジン骨格含有フェノールノボラック系硬化剤(フェノール性水酸基当量約124、DIC(株)製「LA−7054」、不揮発成分60質量%のMEK溶液)32部、リン系硬化促進剤(北興化学工業(株)製「TBP−DA」、テトラブチルホスホニウムデカン酸塩)0.2部、アミノシラン系カップリング剤(信越化学(株)製「KBM573」)で表面処理した球状シリカ((株)アドマテックス製「SOC2」、平均粒径0.5μm)160部、ポリビニルブチラール樹脂溶液(重量平均分子量27000、ガラス転移温度105℃、積水化学工業(株)製「KS−1」、不揮発成分15質量%のエタノールとトルエンの質量比が1:1の混合溶液)2部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。樹脂ワニス中の不揮発成分の合計質量を100質量%としたとき、無機充填材(球状シリカ)の含有量は、69.5質量%であった。
上記(1)で調製した支持体の離型層上に、上記(2)で調製した樹脂ワニスAをダイコーターにて均一に塗布し、80〜120℃(平均100℃)で6分間乾燥させて樹脂組成物層を形成した。得られた樹脂組成物層の厚さは40μm、残留溶剤量は約2質量%であった。次いで、樹脂組成物層上に、保護フィルムとしてポリプロピレンフィルム(厚さ15μm)を貼り合わせながらロール状に巻き取った。得られたロール状の接着シートを幅507mmにスリットして、寸法507mm×336mmの接着シート1を得た。
(1)内層回路基板の準備
ガラス布基材エポキシ樹脂両面銅張積層板(銅箔の厚さ18μm、基板の厚さ0.8mm、パナソニック電工(株)製「R1515A」)の両面を、メック(株)製「CZ8100」に浸漬して銅表面の粗化処理を行った。
作製した接着シート1を、バッチ式真空加圧ラミネーター((株)名機製作所製「MVLP−500」)を用いて、樹脂組成物層が内層回路基板と接合するように、内層回路基板の両面にラミネート処理した。ラミネート処理は、30秒間減圧して気圧を13hPa以下とした後、100℃、圧力0.74MPaで30秒間圧着することにより行った。なお、接着シート1は、保護フィルムを剥離した後に、積層に供した。
接着シート1の積層後、支持体を付けたまま、加熱の開始温度を20℃(室温)で8℃/分で昇温し、下記表に記載の温度T1(℃)、温度T2(℃)を含む2段階の加熱条件(即ち図1の態様)であって、下記表に記載の条件2にて樹脂組成物層を熱硬化して絶縁層を形成した。得られた絶縁層の内層回路上の厚さは40μmであった。
実施例1において、樹脂組成物層の加熱条件2を加熱条件3とした以外は実施例1と同様にして、評価・測定用サンプルを調製した。
実施例1において、樹脂ワニスAを以下の樹脂ワニスBに変え、加熱条件2を加熱条件5とし、支持体の予備加熱条件2を予備加熱条件1に変えた以外は実施例1と同様にして、評価・測定用サンプルを調製した。
液状ビスフェノールA型エポキシ樹脂(エポキシ当量180、三菱化学(株)製「jER828EL」)28部、ナフタレン型4官能エポキシ樹脂(エポキシ当量162、DIC(株)製「HP−4700」)28部を、メチルエチルケトン(以下、「MEK」と略称する。)15部及びシクロヘキサノン15部の混合溶剤に撹拌しながら加熱溶解させた。そこへ、ノボラック構造を有するナフトール系硬化剤(フェノール性水酸基当量215、新日鉄住金化学(株)製「SN485」、固形分50%のMEK溶液)110部、硬化促進剤(四国化成工業(株)製「2E4MZ」、2−フェニル−4−メチルイミダゾール)0.1部、球形シリカ((株)アドマテックス製「SO−C2」、平均粒径0.5μm)70部、ポリビニルブチラール樹脂溶液(積水化学工業(株)製「KS−1」、重量平均分子量27000、ガラス転移温度105℃、固形分15%のエタノールとトルエンの1:1の混合溶液)35部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。樹脂ワニス中の無機充填材の含有量は、樹脂ワニス中の不揮発成分を100質量%としたとき、38質量%であった。また、[エポキシ樹脂のエポキシ基の合計数]:[硬化剤の反応基の合計数]=1:0.78であった。
実施例3において、加熱条件5を加熱条件6とした以外は、実施例3と同様にして、評価・測定用サンプルを調製した。
実施例3において、加熱条件5を加熱条件7とした以外は、実施例3と同様にして、評価・測定用サンプルを調製した。
実施例3において、加熱条件5を加熱条件8とした以外は、実施例3と同様にして、評価・測定用サンプルを調製した。
実施例3において、加熱条件5を加熱条件4とした以外は、実施例3と同様にして、評価・測定用サンプルを調製した。
実施例1において、加熱条件2を加熱条件1とした以外は、実施例1と同様にして、評価・測定用サンプルを作製した。
実施例3において、加熱条件5を加熱条件6とし、支持体の予備加熱条件1を予備加熱条件3に変えた以外は、実施例3と同様にして、評価・測定用サンプルを作製した。
<支持体のTD方向における膨張・収縮率の測定>
実施例及び比較例で作製した支持体のTD方向が長辺に沿う方向となるように寸法20mm×4mmの長方形状の試験片を切り出した。該試験片について、熱機械分析装置(セイコーインスツル(株)製「TMA−SS6100」)を用いて、大気雰囲気下、荷重9.8mmNで押圧しつつ上記表に記載の温度T1(℃)、温度T2(℃)を含む2段階の加熱条件の下、加熱処理の全過程について膨張率を測定し、温度T1(℃)から温度T2(℃)への加熱時のTD方向の最大膨張率EATD(%)、及び加熱終了時点の膨張率EBTD(%)を求めた。
実施例及び比較例で作製した支持体のMD方向を長辺側にして寸法20mm×4mmの試験片を切り出した。該試験片について、上記と同様にして、温度T1(℃)から温度T2(℃)への加熱時のMD方向の最大膨張率EAMD(%)、及び加熱終了時点の膨張率EBMD(%)を求めた。
実施例及び比較例で作製された接着シートの樹脂組成物層について、動的粘弾性測定装置((株)ユー・ビー・エム製「Rheosol−G3000」)を使用して溶融粘度を測定した。樹脂組成物1gを試料として、直径18mmのパラレルプレートを使用し、測定開始温度を60℃、昇温速度を8℃/分とし、上記表に記載の温度T1(℃)、温度T2(℃)を含む2段階の加熱条件において測定温度間隔2.5℃、振動1Hz、歪み1degの測定条件にて動的粘弾性率を測定した。温度T1(℃)以上における最低粘度(ポイズ)を確認した。また、120℃以上の最低溶融粘度(poise)Yを確認した。
実施例及び比較例で作製した評価・測定用サンプルにおける絶縁層の表面を、非接触型表面粗さ計(ビーコインスツルメンツ社製「WYKO GT−X3」)を用いて、VSIコンタクトモード、50倍レンズにより測定領域を121μm×92μmとして測定し、得られる数値(絶縁層の最大高さと最小値の差)によりアンジュレーション(μm)を求めた。各絶縁層について、硬化ムラが発生している場合は、硬化ムラの発生部分を3箇所(ただし、絶縁層の端部から絶縁層の寸法に対して5%の範囲を除く)、硬化ムラが発生していない場合は、絶縁層の端部から絶縁層の寸法に対して5%の範囲を除いた、無作為に選んだ3箇所を測定した。
絶縁層表面の評価は、加熱処理後の目視観察、及び上記のアンジュレーションの測定による総合評価で行った。
(条件)
・目視観察により絶縁層形成後に硬化ムラが発生していない。
・絶縁層形成後に1.0μmを超えるアンジュレーションが発生していない。
10A 支持体の寸法(支持体の長さ)
10B 端部
10C 中央部
20 接着シート
21 支持体
22 絶縁層
30 内層基板
Claims (13)
- (A)支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する工程、
(B)樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する工程、及び
(C)接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する工程、を含むプリント配線板の製造方法であって、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))をXとし、
120℃以上における樹脂組成物層の最低溶融粘度をY(poise)としたとき、Y>2700Xの関係を満たすように熱硬化させる、プリント配線板の製造方法。 - Y>2700X>300の関係を満たす、請求項1に記載のプリント配線板の製造方法。
- Xが、4以下である、請求項1又は2に記載のプリント配線板の製造方法。
- Yが、4000poise以上である、請求項1〜3のいずれか1項に記載のプリント配線板の製造方法。
- (A)支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートを準備する工程、
(B)樹脂組成物層が内層基板と接合するように、内層基板に接着シートを積層する工程、及び
(C)接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させ、絶縁層を形成する工程、を含むプリント配線板の製造方法であって、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))が、4以下であり、
T1(℃)以上における樹脂組成物層の最低溶融粘度が4000poise以上となるように熱硬化させる、プリント配線板の製造方法。 - T1が、50℃≦T1≦150℃の関係を満たす、請求項1〜5のいずれか1項に記載のプリント配線板の製造方法。
- T1が、120℃≦T1≦150℃の関係を満たす、請求項1〜6のいずれか1項に記載のプリント配線板の製造方法。
- T2が、150℃≦T2≦240℃の関係を満たす、請求項1〜7のいずれか1項に記載のプリント配線板の製造方法。
- 工程(C)において、接着シートをT1(℃)にて加熱した後、さらにT2(℃)にて加熱し、熱硬化を行う、請求項1〜8のいずれか1項に記載のプリント配線板の製造方法。
- 支持体が、プラスチックフィルムからなる、請求項1〜9のいずれか1項に記載のプリント配線板の製造方法。
- 請求項1〜10のいずれか1項に記載のプリント配線板の製造方法により製造されたプリント配線板を備える、半導体装置。
- 内層基板と、該内層基板に設けられた絶縁層と、該絶縁層に接合している支持体とを有する積層構造体であって、支持体の端部から支持体の寸法に対して5%を除く範囲において、当該絶縁層の厚みのばらつきが1μm以下である、積層構造体。
- 支持体と、該支持体上に設けられた樹脂組成物層とを備える接着シートであって、
接着シートをT1(℃)からT2(℃)へ加熱することで熱硬化させる際、
T1(℃)からT2(℃)への加熱時のMD方向の支持体の最大膨張率EAMD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBMD(%)との差(EAMD−EBMD)と、
T1(℃)からT2(℃)への加熱時のTD方向の支持体の最大膨張率EATD(%)と、加熱終了時点のT2(℃)における支持体の膨張率EBTD(%)との差(EATD−EBTD)の和((EAMD−EBMD)+(EATD−EBTD))をXとし、
120℃以上における樹脂組成物層の最低溶融粘度をY(poise)としたとき、Y>2700Xの関係を満たす、接着シート。
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CN201710164628.9A CN107241877B (zh) | 2016-03-29 | 2017-03-20 | 印刷布线板的制造方法 |
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JP2007095760A (ja) * | 2005-09-27 | 2007-04-12 | Tomoegawa Paper Co Ltd | 多層配線基板の製造方法 |
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JP2007095760A (ja) * | 2005-09-27 | 2007-04-12 | Tomoegawa Paper Co Ltd | 多層配線基板の製造方法 |
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