JP2017162999A - 素子チップの製造方法 - Google Patents
素子チップの製造方法 Download PDFInfo
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- JP2017162999A JP2017162999A JP2016046344A JP2016046344A JP2017162999A JP 2017162999 A JP2017162999 A JP 2017162999A JP 2016046344 A JP2016046344 A JP 2016046344A JP 2016046344 A JP2016046344 A JP 2016046344A JP 2017162999 A JP2017162999 A JP 2017162999A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 238000005530 etching Methods 0.000 claims abstract description 31
- 235000020637 scallop Nutrition 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 19
- 241000237503 Pectinidae Species 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 241000237509 Patinopecten sp. Species 0.000 abstract description 13
- 238000005336 cracking Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000001020 plasma etching Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 15
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000004380 ashing Methods 0.000 description 14
- 238000000227 grinding Methods 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- -1 polysiloxane Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229920002943 EPDM rubber Polymers 0.000 description 2
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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Abstract
【解決手段】素子チップの製造方法は、第1主面および第2主面を備え、複数の素子領域および素子領域を画定する分割領域を備え、第1主面を素子領域において覆い、分割領域において露出させるマスクが形成された可撓性を有する半導体基板をステージに載置する載置工程と、ステージ上で半導体基板の第1主面側をプラズマに晒して、分割領域に溝を形成しながらエッチングすることにより、半導体基板を、素子領域を備える複数の素子チップに個片化するプラズマダイシング工程とを備える。半導体基板の厚みは、保持シートの厚みよりも小さく、プラズマダイシング工程において、エッチングを溝の底部を常に露出させた状態で行うことにより、素子チップの側面にスキャロップを形成することなく半導体基板を個片化する。
【選択図】図3
Description
前記ステージ上で、前記半導体基板の前記第1主面側をプラズマに晒して、前記分割領域に溝を形成しながら前記第1主面側から前記第2主面までエッチングすることにより、前記半導体基板を、前記素子領域を備える複数の素子チップに個片化するプラズマダイシング工程と、を備え、
前記半導体基板の厚みは、前記保持シートの厚みよりも小さく、
前記プラズマダイシング工程において、前記第1主面側から前記第2主面までのエッチングを、前記溝の底部を常に露出させた状態で行うことにより、前記素子チップの側面にスキャロップを形成することなく前記半導体基板を個片化する、素子チップの製造方法に関する。
プラズマ処理装置が備えるステージに載置される半導体基板は、プラズマ処理装置が備えるステージに載置されるが、図1は、保持シートに保持された状態の半導体基板を示す上面図(A)、およびそのIB−IB線による矢示断面図(B)である。保持シート22は、粘着剤層22aと、粘着剤層22aを支持する基材層22bとを備えている。保持シート22は、粘着剤層22aの基材層22bとは反対側の表面(粘着面)により、半導体基板10を保持し、半導体基板10の周囲に配置される環状のフレーム21とは固定されている。このフレーム21と、フレーム21に固定された保持シート22とを併せて、搬送キャリア20と称する。フレーム21は剛性を有し、保持シート22は可撓性を有しており、弾性的に伸展可能である。
(半導体基板の準備工程)
半導体基板の準備工程では、マスクMが形成された半導体基板10を準備する。
(半導体基板)
半導体基板10は、複数の素子領域R2と、複数の素子領域R2を画定する分割領域R1とを備えている。半導体基板10の第1主面には、素子領域R2において第1主面を覆い、分割領域R1において第1主面を露出させるマスクMが形成されている。
絶縁膜または多層配線層の厚みは特に限定されず、例えば、2〜10μmである。レジスト層の厚みも特に限定されず、例えば、5〜20μmである。
また、半導体基板10には、オリエンテーションフラット(オリフラ)、ノッチ等の切欠き(いずれも図示せず)が設けられていてもよい。
半導体基板10の素子領域R2を覆うマスクMとしては、レジスト、SiO2膜、窒化シリコン膜、金属薄膜などを用いることもできる。マスクMは、その構成材料の種類に応じて公知の方法で半導体基板10の第1主面に形成される。
半導体基板10は、必要に応じて研削工程により薄化してもよい。研削工程では、マスクMが形成された半導体基板10の第2主面側から研削することにより、半導体基板10の半導体層を薄化する。この半導体層の研削は、一般に、バックグラインド(BG)加工と呼ばれるものである。
なお、研削工程に先立って、必要に応じて、保護テープによりマスクM側の表面を保護しておき、研削工程後に保護テープを剥離してもよい。
また、研削工程の後に、必要に応じて半導体基板10の第2主面を研磨するポリッシング工程を行ってもよい。
保持工程では、半導体基板10の第2主面側を保持シート22に保持させる。このとき、保持シート22は、フレーム21と一体化されて搬送キャリア20を構成していることが好ましい。ハンドリング性の観点から、保持シート22はフレーム21に固定される。
保持シート22の材質は特に限定されない。なかでも、半導体基板10が貼着され易い点で、保持シート22は、粘着剤層22aと基材層22bとして柔軟性のある樹脂フィルムを含むことが好ましい。樹脂フィルムを含む保持シート22は、可撓性を有している。
なお、粘着剤層22aの厚みは、例えば、5〜100μmであり、5〜15μmであることが好ましい。
保持シート22に固定化されるフレーム21は、半導体基板10の全体と同じかそれ以上の面積の開口を有した枠体であり、所定の幅および略一定の薄い厚みを有している。フレーム21は、保持シート22および半導体基板10を保持した状態で搬送できる程度の剛性を有している。フレーム21の開口の形状は特に限定されないが、例えば、円形や、矩形、六角形など多角形であってもよい。フレーム21には、位置決めのためのノッチやコーナーカットが設けられていてもよい。フレーム21の材質としては、例えば、アルミニウム、ステンレス鋼等の金属や、樹脂等が挙げられる。
載置工程(1)では、半導体基板10は、図1に示すような搬送キャリア20の保持シート22に保持された状態で、プラズマ処理装置が備える真空チャンバの処理室(反応室)に供給され、処理室内のステージ211上に載置される(図2(1))。このとき、搬送キャリア20は、保持シート22の半導体基板10を保持している面(粘着剤層22aの粘着面)が上方を向くように、ステージ211に載置される。
プラズマダイシング工程(2)では、半導体基板10を保持シート22に保持させた状態で、第1主面側をプラズマに晒すことにより、分割領域R1を第1主面側から第2主面までプラズマエッチングする。このプラズマエッチングにより、半導体基板10は、素子領域R2を備える複数の素子チップ110に分割される(図2(2))。
マスクMがレジストマスクの場合、アッシング工程(図2(3))をプラズマダイシング工程(2)の後に行ってもよい。アッシング工程(3)では、マスクMを除去できればよい。アッシング工程(3)は、例えば、プラズマダイシング工程が行われる反応室内で行うことができる。アッシング工程(3)では、反応室内に、アッシング用のプロセスガス(例えば、酸素ガス)を導入しつつ、反応室内を所定圧力に維持し、高周波電力を供給して反応室内にプラズマを発生させて、半導体基板10に照射する。酸素プラズマの照射により、半導体基板10の表面からマスクMが除去される。
ピックアップ工程(4)は、プラズマダイシング工程(2)の後に行なわれ、あるいは、プラズマダイシング工程(2)の後でアッシング工程(3)が行われる場合には、アッシング工程(3)の後に行われる。プラズマダイシング工程(2)で個片化された半導体基板10は、素子領域R2を備える素子チップ110の状態に分離された状態となっている。素子チップ110は、保持シート22の粘着剤層22aの粘着面に保持されている。
Claims (3)
- 第1主面および前記第1主面の反対側の第2主面を備えるとともに、複数の素子領域および前記素子領域を画定する分割領域を備え、前記素子領域において前記第1主面を覆い、かつ前記分割領域において前記第1主面を露出させるマスクが形成された可撓性を有する半導体基板を、前記第2主面が保持シートに保持された状態で、プラズマ処理装置が備えるステージに載置する載置工程と、
前記ステージ上で、前記半導体基板の前記第1主面側をプラズマに晒して、前記分割領域に溝を形成しながら前記第1主面側から前記第2主面までエッチングすることにより、前記半導体基板を、前記素子領域を備える複数の素子チップに個片化するプラズマダイシング工程と、を備え、
前記半導体基板の厚みは、前記保持シートの厚みよりも小さく、
前記プラズマダイシング工程において、前記第1主面側から前記第2主面までのエッチングを、前記溝の底部を常に露出させた状態で行うことにより、前記素子チップの側面にスキャロップを形成することなく前記半導体基板を個片化する、素子チップの製造方法。 - 前記半導体基板の厚みは50μm以下である、請求項1に記載の素子チップの製造方法。
- 前記プラズマダイシング工程において、六フッ化硫黄および酸素を含むプロセスガスを原料として前記プラズマを発生させる、請求項1または2に記載の素子チップの製造方法。
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JP2021509227A (ja) * | 2018-06-20 | 2021-03-18 | エルジー・ケム・リミテッド | 回折格子導光板用モールドの製造方法および回折格子導光板の製造方法 |
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