JP2017152689A5 - - Google Patents
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- Publication number
- JP2017152689A5 JP2017152689A5 JP2017016396A JP2017016396A JP2017152689A5 JP 2017152689 A5 JP2017152689 A5 JP 2017152689A5 JP 2017016396 A JP2017016396 A JP 2017016396A JP 2017016396 A JP2017016396 A JP 2017016396A JP 2017152689 A5 JP2017152689 A5 JP 2017152689A5
- Authority
- JP
- Japan
- Prior art keywords
- movable pedestal
- area
- processing
- pedestal
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 71
- 239000000758 substrate Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/017,444 | 2016-02-05 | ||
| US15/017,444 US9953843B2 (en) | 2016-02-05 | 2016-02-05 | Chamber for patterning non-volatile metals |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017152689A JP2017152689A (ja) | 2017-08-31 |
| JP2017152689A5 true JP2017152689A5 (enExample) | 2020-04-09 |
| JP6948797B2 JP6948797B2 (ja) | 2021-10-13 |
Family
ID=59497965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017016396A Active JP6948797B2 (ja) | 2016-02-05 | 2017-02-01 | 不揮発性金属をパターニングするためのチャンバ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9953843B2 (enExample) |
| JP (1) | JP6948797B2 (enExample) |
| KR (1) | KR20170093716A (enExample) |
| CN (2) | CN107045969B (enExample) |
| TW (1) | TWI742034B (enExample) |
Families Citing this family (28)
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| CN107548515B (zh) * | 2015-04-24 | 2019-10-15 | 应用材料公司 | 包含流动隔离环的处理套组 |
| US10358721B2 (en) * | 2015-10-22 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
| US11251019B2 (en) * | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
| JP6863199B2 (ja) | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | プラズマ処理装置 |
| US12012652B2 (en) | 2018-05-21 | 2024-06-18 | Applied Materials, Inc. | Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination |
| JP2022090148A (ja) * | 2019-04-02 | 2022-06-17 | 株式会社Adeka | 原子層エッチング法用エッチング材料 |
| US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
| US11139168B2 (en) * | 2019-12-02 | 2021-10-05 | Applied Materials, Inc. | Chamber deposition and etch process |
| US11424123B2 (en) * | 2020-02-25 | 2022-08-23 | Tokyo Electron Limited | Forming a semiconductor feature using atomic layer etch |
| US12080571B2 (en) | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
| US11501957B2 (en) * | 2020-09-03 | 2022-11-15 | Applied Materials, Inc. | Pedestal support design for precise chamber matching and process control |
| US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
| US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| US20230416606A1 (en) * | 2020-12-08 | 2023-12-28 | Lam Research Corporation | Photoresist development with organic vapor |
| US20240021435A1 (en) * | 2021-01-15 | 2024-01-18 | Lam Research Corporation | Metal etch |
| US12195314B2 (en) | 2021-02-02 | 2025-01-14 | Applied Materials, Inc. | Cathode exchange mechanism to improve preventative maintenance time for cluster system |
| US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
| JP7591962B2 (ja) * | 2021-03-30 | 2024-11-29 | 株式会社アルバック | 真空処理方法及び真空処理装置 |
| US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
| US20230113063A1 (en) * | 2021-10-11 | 2023-04-13 | Applied Materials, Inc. | Dynamic processing chamber baffle |
| KR102765372B1 (ko) | 2021-11-16 | 2025-02-11 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| KR20230085072A (ko) * | 2021-12-06 | 2023-06-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| WO2024215408A1 (en) * | 2023-04-14 | 2024-10-17 | Versum Materials Us, Llc | Vapor-phase etch of metal-containing materials |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429070A (en) | 1989-06-13 | 1995-07-04 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| JPH0613361A (ja) | 1992-06-26 | 1994-01-21 | Tokyo Electron Ltd | 処理装置 |
| JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6296711B1 (en) * | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
| KR100292410B1 (ko) * | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
| US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| US6409837B1 (en) | 1999-01-13 | 2002-06-25 | Tokyo Electron Limited | Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor |
| US6419751B1 (en) | 1999-07-26 | 2002-07-16 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| KR100338768B1 (ko) * | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
| JP2002343787A (ja) * | 2001-05-17 | 2002-11-29 | Research Institute Of Innovative Technology For The Earth | プラズマ処理装置およびそのクリーニング方法 |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| AU2002343583A1 (en) | 2001-10-29 | 2003-05-12 | Genus, Inc. | Chemical vapor deposition system |
| US20030211244A1 (en) * | 2002-04-11 | 2003-11-13 | Applied Materials, Inc. | Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
| JP4338355B2 (ja) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
| US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
| JP2004119448A (ja) * | 2002-09-24 | 2004-04-15 | Nec Kyushu Ltd | プラズマエッチング装置およびプラズマエッチング方法 |
| JP4292002B2 (ja) * | 2002-12-18 | 2009-07-08 | 株式会社日立国際電気 | プラズマ処理装置 |
| US7031600B2 (en) * | 2003-04-07 | 2006-04-18 | Applied Materials, Inc. | Method and apparatus for silicon oxide deposition on large area substrates |
| US7700155B1 (en) | 2004-04-08 | 2010-04-20 | Novellus Systems, Inc. | Method and apparatus for modulation of precursor exposure during a pulsed deposition process |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| KR100790392B1 (ko) | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | 반도체 제조장치 |
| US7422983B2 (en) | 2005-02-24 | 2008-09-09 | International Business Machines Corporation | Ta-TaN selective removal process for integrated device fabrication |
| US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
| US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
| KR20070055874A (ko) * | 2005-11-28 | 2007-05-31 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US20080193673A1 (en) * | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
| US8580078B2 (en) * | 2007-01-26 | 2013-11-12 | Lam Research Corporation | Bevel etcher with vacuum chuck |
| JP5358436B2 (ja) * | 2007-07-11 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| EP2219882A4 (en) | 2007-11-16 | 2011-11-23 | Ekc Technology Inc | COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE |
| US20090178763A1 (en) * | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
| US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
| JP5497278B2 (ja) * | 2008-07-17 | 2014-05-21 | 東京エレクトロン株式会社 | 銅の異方性ドライエッチング方法および装置 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| EP2484185A4 (en) * | 2009-09-28 | 2014-07-23 | Lam Res Corp | SLING CONTAINMENT RING ARRANGEMENTS AND ASSOCIATED METHODS |
| JP5675138B2 (ja) * | 2010-03-25 | 2015-02-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20140166618A1 (en) | 2012-12-14 | 2014-06-19 | The Penn State Research Foundation | Ultra-high speed anisotropic reactive ion etching |
| US10351956B2 (en) * | 2013-03-14 | 2019-07-16 | Applied Materials, Inc. | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ALD |
| US9257638B2 (en) * | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
-
2016
- 2016-02-05 US US15/017,444 patent/US9953843B2/en active Active
-
2017
- 2017-01-25 TW TW106102778A patent/TWI742034B/zh active
- 2017-01-26 CN CN201710061612.5A patent/CN107045969B/zh active Active
- 2017-01-26 CN CN201910092850.1A patent/CN110112048A/zh active Pending
- 2017-01-31 KR KR1020170013960A patent/KR20170093716A/ko active Pending
- 2017-02-01 JP JP2017016396A patent/JP6948797B2/ja active Active
-
2018
- 2018-03-15 US US15/922,705 patent/US20180204738A1/en not_active Abandoned
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