SG11201811727WA - Method and device for producing coated semiconductor wafers - Google Patents

Method and device for producing coated semiconductor wafers

Info

Publication number
SG11201811727WA
SG11201811727WA SG11201811727WA SG11201811727WA SG11201811727WA SG 11201811727W A SG11201811727W A SG 11201811727WA SG 11201811727W A SG11201811727W A SG 11201811727WA SG 11201811727W A SG11201811727W A SG 11201811727WA SG 11201811727W A SG11201811727W A SG 11201811727WA
Authority
SG
Singapore
Prior art keywords
reactor chamber
substrate wafer
semiconductor wafers
gas inlet
producing coated
Prior art date
Application number
SG11201811727WA
Inventor
Jörg Haberecht
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201811727WA publication Critical patent/SG11201811727WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

Method and Device for Producing Coated Semiconductor Wafers Method and device for producing coated semiconductor wafers, comprising 5 introduction of a process gas through first gas inlet openings along a first flow direction into a reactor chamber and over a substrate wafer of semiconductor material in order to deposit a layer on the substrate wafer, which lies on a susceptor, wherein material that comes from the process gas is precipitated on a preheat ring, which is arranged around the susceptor; and 10 extraction of the coated substrate wafer from the reactor chamber; characterized by, after extraction of the coated substrate wafer from the reactor chamber: removal of the material precipitate from the preheat ring by introducing an etching gas through the first gas inlet openings into the reactor chamber along the first flow direction and through second gas inlet openings, between which the first gas inlet 15 openings are arranged, over the preheat ring along further flow directions which intersect with the first flow direction. Drawing for the Abstract: Fig.3 20
SG11201811727WA 2016-06-28 2017-06-13 Method and device for producing coated semiconductor wafers SG11201811727WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016211614.2A DE102016211614A1 (en) 2016-06-28 2016-06-28 Method and apparatus for producing coated semiconductor wafers
PCT/EP2017/064383 WO2018001720A1 (en) 2016-06-28 2017-06-13 Method and device for producing coated semiconductor wafers

Publications (1)

Publication Number Publication Date
SG11201811727WA true SG11201811727WA (en) 2019-01-30

Family

ID=59253470

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201811727WA SG11201811727WA (en) 2016-06-28 2017-06-13 Method and device for producing coated semiconductor wafers

Country Status (9)

Country Link
US (1) US10982324B2 (en)
EP (1) EP3475472B1 (en)
JP (1) JP6772300B2 (en)
KR (2) KR20190022808A (en)
CN (1) CN109415840A (en)
DE (1) DE102016211614A1 (en)
SG (1) SG11201811727WA (en)
TW (1) TWI661075B (en)
WO (1) WO2018001720A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019207772A1 (en) * 2019-05-28 2020-12-03 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
CN111893567B (en) * 2020-07-03 2022-02-22 北京北方华创微电子装备有限公司 Vapor deposition chamber
CN115404543B (en) * 2022-08-31 2024-03-26 北京北方华创微电子装备有限公司 Process chamber of epitaxial growth equipment and epitaxial growth equipment

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061455B2 (en) 1991-09-04 2000-07-10 株式会社東芝 Vapor phase growth apparatus and cleaning method in vapor phase growth apparatus
US5551982A (en) 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
JP3824675B2 (en) * 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ Crystal manufacturing equipment
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
US6099648A (en) * 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
JPH11329975A (en) 1998-05-12 1999-11-30 Mitsubishi Materials Silicon Corp One-by-one-type epitaxial growing device and method for cleaning the same
US6245149B1 (en) 1999-07-01 2001-06-12 Applied Materials, Inc. Inert barrier for high purity epitaxial deposition systems
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP2006228782A (en) * 2005-02-15 2006-08-31 Sumco Corp Single wafer processing epitaxial wafer manufacturing apparatus and method of maintaining it
JP2008235741A (en) * 2007-03-23 2008-10-02 Shin Etsu Handotai Co Ltd Cover for nozzle cleaning, vapor growth device, and cleaning method for nozzle
JP5092975B2 (en) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
DE102009025971A1 (en) * 2009-06-15 2010-12-16 Aixtron Ag Method for setting up an epitaxial reactor
KR101125738B1 (en) * 2010-03-17 2012-03-27 주식회사 엘지실트론 A susceptor and an epitaxial reactor using the same
JP5540932B2 (en) * 2010-06-23 2014-07-02 株式会社Ｓｕｍｃｏ Epitaxial growth apparatus and cleaning method thereof
DE102011083245B4 (en) * 2011-09-22 2019-04-25 Siltronic Ag Method and device for depositing an epitaxial layer of silicon on a semiconductor wafer of monocrystalline silicon by vapor deposition in a process chamber
DE102012205616B4 (en) * 2012-04-04 2016-07-14 Siltronic Ag Device for depositing a layer on a semiconductor wafer by means of vapor deposition
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
WO2014179014A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Inject and exhaust design for epi chamber flow manipulation
CN106663606A (en) 2014-06-20 2017-05-10 应用材料公司 Apparatus for gas injection to epitaxial chamber

Also Published As

Publication number Publication date
TWI661075B (en) 2019-06-01
EP3475472A1 (en) 2019-05-01
KR102294324B1 (en) 2021-08-25
WO2018001720A1 (en) 2018-01-04
EP3475472B1 (en) 2021-08-11
JP2019519933A (en) 2019-07-11
KR20190022808A (en) 2019-03-06
US20200318234A1 (en) 2020-10-08
US10982324B2 (en) 2021-04-20
JP6772300B2 (en) 2020-10-21
KR20210047367A (en) 2021-04-29
DE102016211614A1 (en) 2017-12-28
TW201825701A (en) 2018-07-16
CN109415840A (en) 2019-03-01

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