CN107045969B - 用于图案化非挥发性金属的室 - Google Patents

用于图案化非挥发性金属的室 Download PDF

Info

Publication number
CN107045969B
CN107045969B CN201710061612.5A CN201710061612A CN107045969B CN 107045969 B CN107045969 B CN 107045969B CN 201710061612 A CN201710061612 A CN 201710061612A CN 107045969 B CN107045969 B CN 107045969B
Authority
CN
China
Prior art keywords
chamber
region
base
susceptor
movable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710061612.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN107045969A (zh
Inventor
沈美华
黄硕刚
索斯藤·利尔
西奥·帕纳戈波罗斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN201910092850.1A priority Critical patent/CN110112048A/zh
Publication of CN107045969A publication Critical patent/CN107045969A/zh
Application granted granted Critical
Publication of CN107045969B publication Critical patent/CN107045969B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201710061612.5A 2016-02-05 2017-01-26 用于图案化非挥发性金属的室 Active CN107045969B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910092850.1A CN110112048A (zh) 2016-02-05 2017-01-26 用于图案化非挥发性金属的室

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/017,444 2016-02-05
US15/017,444 US9953843B2 (en) 2016-02-05 2016-02-05 Chamber for patterning non-volatile metals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910092850.1A Division CN110112048A (zh) 2016-02-05 2017-01-26 用于图案化非挥发性金属的室

Publications (2)

Publication Number Publication Date
CN107045969A CN107045969A (zh) 2017-08-15
CN107045969B true CN107045969B (zh) 2020-05-22

Family

ID=59497965

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710061612.5A Active CN107045969B (zh) 2016-02-05 2017-01-26 用于图案化非挥发性金属的室
CN201910092850.1A Pending CN110112048A (zh) 2016-02-05 2017-01-26 用于图案化非挥发性金属的室

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910092850.1A Pending CN110112048A (zh) 2016-02-05 2017-01-26 用于图案化非挥发性金属的室

Country Status (5)

Country Link
US (2) US9953843B2 (enExample)
JP (1) JP6948797B2 (enExample)
KR (1) KR20170093716A (enExample)
CN (2) CN107045969B (enExample)
TW (1) TWI742034B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107548515B (zh) * 2015-04-24 2019-10-15 应用材料公司 包含流动隔离环的处理套组
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
US12012652B2 (en) 2018-05-21 2024-06-18 Applied Materials, Inc. Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination
JP2022090148A (ja) * 2019-04-02 2022-06-17 株式会社Adeka 原子層エッチング法用エッチング材料
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11139168B2 (en) * 2019-12-02 2021-10-05 Applied Materials, Inc. Chamber deposition and etch process
US11424123B2 (en) * 2020-02-25 2022-08-23 Tokyo Electron Limited Forming a semiconductor feature using atomic layer etch
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11501957B2 (en) * 2020-09-03 2022-11-15 Applied Materials, Inc. Pedestal support design for precise chamber matching and process control
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US20230416606A1 (en) * 2020-12-08 2023-12-28 Lam Research Corporation Photoresist development with organic vapor
US20240021435A1 (en) * 2021-01-15 2024-01-18 Lam Research Corporation Metal etch
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
JP7591962B2 (ja) * 2021-03-30 2024-11-29 株式会社アルバック 真空処理方法及び真空処理装置
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
US20230113063A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Dynamic processing chamber baffle
KR102765372B1 (ko) 2021-11-16 2025-02-11 세메스 주식회사 기판 처리 장치 및 방법
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
WO2024215408A1 (en) * 2023-04-14 2024-10-17 Versum Materials Us, Llc Vapor-phase etch of metal-containing materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102257885A (zh) * 2008-12-19 2011-11-23 朗姆研究公司 针对可调整的间隙等离子体室中的双重限制和超高压的方法和设备
CN102656952A (zh) * 2009-09-28 2012-09-05 朗姆研究公司 组合式约束环装置及其方法
CN104953027A (zh) * 2014-03-27 2015-09-30 朗姆研究公司 蚀刻非挥发性金属材料的方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
US6296711B1 (en) * 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6409837B1 (en) 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6419751B1 (en) 1999-07-26 2002-07-16 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
JP2002343787A (ja) * 2001-05-17 2002-11-29 Research Institute Of Innovative Technology For The Earth プラズマ処理装置およびそのクリーニング方法
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
AU2002343583A1 (en) 2001-10-29 2003-05-12 Genus, Inc. Chemical vapor deposition system
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
JP2004119448A (ja) * 2002-09-24 2004-04-15 Nec Kyushu Ltd プラズマエッチング装置およびプラズマエッチング方法
JP4292002B2 (ja) * 2002-12-18 2009-07-08 株式会社日立国際電気 プラズマ処理装置
US7031600B2 (en) * 2003-04-07 2006-04-18 Applied Materials, Inc. Method and apparatus for silicon oxide deposition on large area substrates
US7700155B1 (en) 2004-04-08 2010-04-20 Novellus Systems, Inc. Method and apparatus for modulation of precursor exposure during a pulsed deposition process
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
KR100790392B1 (ko) 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치
US7422983B2 (en) 2005-02-24 2008-09-09 International Business Machines Corporation Ta-TaN selective removal process for integrated device fabrication
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
KR20070055874A (ko) * 2005-11-28 2007-05-31 삼성전자주식회사 플라즈마 처리 장치
US20080193673A1 (en) * 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
JP5358436B2 (ja) * 2007-07-11 2013-12-04 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
EP2219882A4 (en) 2007-11-16 2011-11-23 Ekc Technology Inc COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE
US20090178763A1 (en) * 2008-01-10 2009-07-16 Applied Materials, Inc. Showerhead insulator and etch chamber liner
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
JP5497278B2 (ja) * 2008-07-17 2014-05-21 東京エレクトロン株式会社 銅の異方性ドライエッチング方法および装置
JP5675138B2 (ja) * 2010-03-25 2015-02-25 東京エレクトロン株式会社 プラズマ処理装置
US20140166618A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US10351956B2 (en) * 2013-03-14 2019-07-16 Applied Materials, Inc. Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ALD

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102257885A (zh) * 2008-12-19 2011-11-23 朗姆研究公司 针对可调整的间隙等离子体室中的双重限制和超高压的方法和设备
CN102656952A (zh) * 2009-09-28 2012-09-05 朗姆研究公司 组合式约束环装置及其方法
CN104953027A (zh) * 2014-03-27 2015-09-30 朗姆研究公司 蚀刻非挥发性金属材料的方法

Also Published As

Publication number Publication date
CN110112048A (zh) 2019-08-09
US20180204738A1 (en) 2018-07-19
JP2017152689A (ja) 2017-08-31
US20170229317A1 (en) 2017-08-10
KR20170093716A (ko) 2017-08-16
JP6948797B2 (ja) 2021-10-13
CN107045969A (zh) 2017-08-15
TW201740465A (zh) 2017-11-16
US9953843B2 (en) 2018-04-24
TWI742034B (zh) 2021-10-11

Similar Documents

Publication Publication Date Title
CN107045969B (zh) 用于图案化非挥发性金属的室
JP7460727B2 (ja) パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源
KR102695879B1 (ko) 포토레지스트 패터닝 스컴 (scum) 의 제거를 위한 원자 층 세정
US9997371B1 (en) Atomic layer etch methods and hardware for patterning applications
US9624578B2 (en) Method for RF compensation in plasma assisted atomic layer deposition
US11987876B2 (en) Chamfer-less via integration scheme
TWI881055B (zh) 用於在euv圖案化中減少缺陷的多層硬遮罩
JP7677886B2 (ja) インターバル調整パージによるスループットの向上
JP7667167B2 (ja) コア除去
WO2020028119A1 (en) Non-selective and selective etching through alternating layers of materials

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant