JP2017135414A - イオンビームエッチング装置及び制御装置 - Google Patents
イオンビームエッチング装置及び制御装置 Download PDFInfo
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- JP2017135414A JP2017135414A JP2017085770A JP2017085770A JP2017135414A JP 2017135414 A JP2017135414 A JP 2017135414A JP 2017085770 A JP2017085770 A JP 2017085770A JP 2017085770 A JP2017085770 A JP 2017085770A JP 2017135414 A JP2017135414 A JP 2017135414A
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Abstract
Description
基板を処理する処理室と、
前記処理室と前記プラズマ発生室との間に設けられ、前記プラズマ発生室からイオンを引き出しイオンビームを形成するためのグリッドと、
前記プラズマ発生室に放電用ガスを導入するためのガス導入部と、
前記処理室内を排気するための排気手段と、
前記処理室内に設けられた基板を載置するための基板ホルダと、
前記基板の処理が行われる前の面内膜厚分布の測定結果が入力される制御部と、
前記プラズマ発生室の外部であって、前記プラズマ発生室の前記グリッドと対向する天井部に設けられた電磁コイルと、を備えたイオンビームエッチング装置であって、
前記電磁コイルは前記天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとを有し、前記外側コイル及び前記内側コイルは互いに独立して電流値が制御可能であり、
前記制御部は、前記制御部に入力された前記測定結果に応じて前記外側コイル及び前記内側コイルに流す電流を制御することを特徴とする。
基板面内の膜厚分布の測定結果が入力され、
該測定結果に基づき、プラズマ発生室の外部であり前記プラズマ発生室のグリッドと対向する天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとの各々の電流値を制御することを特徴とする制御装置である。
図1に本実施形態に係るイオンビームエッチング(IBE)装置の概略図を示す。IBE装置は、処理室101と、該処理室101内にイオンビームを照射するように設けられたイオンビーム発生装置100とを備える。イオンビーム発生装置100と処理室101とは連結されており、イオンビーム発生装置100から発生されたイオンビームは処理室101内に導入される。
第1の実施形態では、CMP工程後の基板面内の膜厚分布をプラズマ発生室102内のプラズマ密度を調整することで補正した。これに対して本実施形態では、グリッド109におけるイオン通過孔の開口密度をグリッドの面内で異ならせることで基板面内の膜厚分布の補正を行う。
上述した第2の実施形態では、グリッド109におけるイオン通過孔の開口密度をグリッドの面内で変化させることで基板111面内の膜厚分布の補正を行った。本実施形態も第2実施形態と同様にグリッド109におけるイオン通過孔の開口密度をグリッド109の面内で異ならせるが、加えてグリッド109におけるイオン通過孔の開口密度を変化させる機構を備えることを要旨とする。
本発明の要旨はCMP工程後に存在する基板111面内の膜厚分布をIBE工程により補正することであるが、IBEは対象とする物質によってエッチングレートが異なる。上述したとおり、図3に示したFETの製造プロセスにおいては、CMP工程によりゲート絶縁膜210が露出するまで加工した後にIBE工程を行ってゲート絶縁膜210をエッチングするが、この時、SiO2からなるゲート絶縁膜210やSiNからなるCMPストッパ膜206といった構成材料がSi系化合物からなる膜は、TiNなどのTi系化合物からなる拡散防止膜211よりもエッチングレートが大きい。そのため、IBE工程後にトレンチ(図3(a)中の200)内の拡散防止膜211がゲート絶縁膜210やCMPストッパ膜206よりも突出する恐れがある。このような導電性の突起部は、その後に例えばSiNからなるキャップ膜を成膜し、高融点金属シリサイド膜へのコンタクトプラグを形成する際に、コンタクトプラグ形成ポイントの位置ズレが生じた際の隣接するコンタクトプラグとの接触等の問題を引き起こす可能性がある。
本実施形態について図10を用いて説明する。本実施形態では、図3に示したFETの製造プロセスにおいて、図10(a)に示すようにCMPストッパ膜206の下にハードマスク213が挿入されている。
本実施形態では、CMP工程後に基板面内の膜厚分布を測定し、その後のIBE工程における膜厚分布補正の強度を調整することを特徴とする。即ち、本実施形態は、第1の実施形態、第3の実施形態もしくは第4の実施形態において、CMP工程後にゲート絶縁膜210の膜厚分布の測定を行い、その測定結果に応じて、IBE工程を制御することを特徴とする。
Claims (3)
- プラズマ発生室と、
基板を処理する処理室と、
前記処理室と前記プラズマ発生室との間に設けられ、前記プラズマ発生室からイオンを引き出しイオンビームを形成するためのグリッドと、
前記プラズマ発生室に放電用ガスを導入するためのガス導入部と、
前記処理室内を排気するための排気手段と、
前記処理室内に設けられた基板を載置するための基板ホルダと、
前記基板の処理が行われる前の面内膜厚分布の測定結果が入力される制御部と、
前記プラズマ発生室の外部であって、前記プラズマ発生室の前記グリッドと対向する天井部に設けられた電磁コイルと、を備えたイオンビームエッチング装置であって、
前記電磁コイルは前記天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとを有し、前記外側コイル及び前記内側コイルは互いに独立して電流値が制御可能であり、
前記制御部は、前記制御部に入力された前記測定結果に応じて前記外側コイル及び前記内側コイルに流す電流を制御することを特徴とするイオンビームエッチング装置。 - 前記内側コイルは前記プラズマ発生室の中心において、前記プラズマ発生室から前記基板に向かう方向と反対方向の磁場を形成し、前記外側コイルは前記プラズマ発生室から前記基板に向かう方向と同方向の磁場を形成することを特徴とする請求項1に記載のイオンビームエッチング装置。
- 請求項1又は2に記載のイオンビームエッチング装置に用いられる制御装置であって、
基板の面内膜厚分布の測定結果が入力され、
該測定結果に基づき、プラズマ発生室の外部であり前記プラズマ発生室のグリッドと対向する天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとの各々の電流値を制御することを特徴とする制御装置。
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